Simple Spray Pyrolysis Technique Research Articles

Electrical Characterization of CdO Based Au/p-Si Rectifier

Cadmium oxide (CdO) film was developed using a chemical spray pyrolysis technique on the p-type silicon (p-Si) substrate. The solution of the CdO was obtained by dissolving cadmium acetate salt in a mixture of distilled water and methanol. High-quality Au and Al contacts were evaporated on the polished and unpolished side of p-Si, respectively to create 4Au/CdO/p-Si/Al device architecture. In this context, four Au/CdO/p-Si/Al devices that were arbitrarily favored were analyzed and compared in depth. Current-Voltage (I-V) measurements were carried out to find out the performance of the CdO interlayer in the Au/p-Si device. The obtained data were analyzed using the Thermionic emission theory, Norde, and Cheung approach. Results indicated that CdO films grown by simple chemical spray pyrolysis technique could be used as barrier modifiers in Au/p-Si rectifier device.

Modification of structure, electrical, linear and third-order nonlinear optical properties of spray pyrolyzed tin oxide films by deposition temperature

Highly transparent and conducting polycrystalline n-type SnO2 thin films with prominent peak corresponding to (1 1 0) plane was deposited using the simple spray pyrolysis technique. A systematic investigation was carried out in order to understand the influence of deposition temperature on the structure, surface morphology, composition, linear and third-order nonlinear optical (NLO) properties, photoluminescence and electrical characteristic of the deposited films. The rise in the deposition temperature led to increase in crystallinity and transmittance of the films. The films deposited at 450 °C showed the highest crystallite size, lesser dislocation density and fibrous surface morphology. The films deposited at 450 °C showed the highest transmittance of around 90% in the visible region and a direct energy band gap of 3.9 eV. Increase in the deposition temperature also reduced the film resistivity and enhanced the carrier concentration. The film deposited at 450 °C possessed the maximum carrier concentration of 2.04 × 1020 cm−3 and minimum resistivity of 0.2483 Ω cm. It was also observed that the deposition temperature influenced on photoluminescent emission and the third-order nonlinear properties of the films. The photoluminescence spectra analysis of the deposited films indicated the existence of oxygen vacancies and other defects which led to nearly a white light emission. The film deposited at 450 °C showed a nonlinear absorption coefficient, nonlinear refractive index and susceptibility of 0.72 cm/W, 5.74 × 10−3 cm2/W and 7.29 × 10−3 esu, respectively. These films exhibited optical limiting behaviour and the obtained least limiting threshold was 1.1 kJ/cm2. The results clearly showed the applicability of spray pyrolyzed SnO2 thin films deposited at 450 °C in optoelectronic and nonlinear devices.

A correlation of lattice distortion with the magnetic properties of calcium doped bismuth ferrite thin films

In this work, Bi1−x Ca x FeO3 (for x = 0.00–0.30) single-phase thin films were developed on clean glass substrates via simple spray pyrolysis technique. The microscopic crystal structure and magnetic characteristics of the Ca modified thin films were investigated. X-ray diffraction study confirms the hexagonal structure with the space group R3c for all the prepared thin film samples. The crystallite sizes and lattice strains were computed by using the Williamson–Hall plot. The morphology of the samples was viewed by field emission scanning electron microscopy which shows that the average size of grains systematically decreases with the addition of Ca atom at Bi site. The compositions of samples were confirmed by using energy dispersive spectroscopy. The structural phase transition and the position of different Raman modes were observed by using the Raman spectroscopy technique. The elementary compositions, different oxidation states, and the effect of oxygen vacancies of the elements were observed by x-ray photoelectron spectroscopy. The magnetic field (H) dependence of magnetization (M) (i.e. M–H hysteresis loops) of the pure bismuth ferrite (BFO) and Ca doped BFO thin film samples conducted at room temperature using a vibrating sample magnetometer with an applied magnetic field of ±30 kOe and confirmed that the value of magnetization significantly increases with Ca addition at Bi-site in BFO atom. The maximum value saturation magnetization of 3.8176 emu g−1 and remanent magnetization of 0.1408 emu g−1 obtained for the 25% Ca doped BFO thin films.

Hierarchical TiO2 microspheres with enlarged lattice spacing for rapid and ultrastable sodium storage

Intercalation-type TiO2 anode materials have garnered extensive interest for use in Na-ion batteries owing to their low cost and excellent stability. However, such materials are limited by their unsatisfactory specific capacity, particularly at high rates. Herein, we demonstrated the synthesis of hierarchical anatase TiO2 microspheres with enlarged lattice spacings using a simple salt template-assisted spray pyrolysis technique. The broad lattice distance can not only promote ionic transfer but also reduce the band gap with locally enhanced differential charge density, according to density functional theory calculations. Consequently, the resultant sample exhibited reversible specific capacities as high as 362 and 141.8 mA h g−1 at 50 and 5 A g−1, respectively. Impressively, the sample retained specific capacities of 154 mA h g−1 at 1.0 A g−1 after 1600 cycles and of 93.4 mA h g−1 at 5 A g−1 after 7700 cycles. To the best of our knowledge, the Na storage performance of the prepared sample is one of the best among that of TiO2-dominated anode materials. These findings provide new insight into the preparation of novel anode materials for Na-ion batteries with high ionic and electronic conductivities.

Physical properties of chemically spray deposited nanocrystalline manganese sulfide (MnS) thin films

In the emerging field of research, the focus of the researchers is on nanomaterials as they preserve all the properties which a good material possesses with the exceptional advantage of dimension and cost. In the existing research work, nanocrystalline manganese sulfide (MnS) thin films were grown using glass substrates as deposition medium at 350 °C through simple and inexpensive spray pyrolysis technique and were characterized using different techniques. The films have nanocrystalline nature and accompanied hexagonal structure with preferred orientation along (1 0 0) direction with an energy bandgap of 3.20 eV. The films show n-type conductivity and the value of resistivity was found to be 6.232 × 106 Ωcm.

Enhanced Optical Properties of FeS2 Using Ni@Cu Doping and Characterization of the Structural and Chemical Compositions for Solar Cell Applications

Transition metals doped FeS2 thin films are promising materials for optoelectronics, energy saving and storage applications. This is a first time report on the simultaneously Ni@Cu doped Fe1 – xMxS2 (M = Ni@Cu = 0, 2, 5, 10, and 20 at %) thin films fabricated by a simple chemical spray pyrolysis technique. In this paper we investigate the impact of doping on the structural, chemical states, optical properties and band gap nature by different characterization techniques. The SEM results show that surface morphology and granular grain size changes with the increment of Ni@Cu content which are coherent with the XRD results. The EDX and XPS measurements exhibit that the films are composed of Fe, S, Ni, and Cu elements whilst the films were slightly oxidized due to processing in the atmospheric conditions. Spectroscopy ellipsometry (SE) analysis demonstrates that the indirect band gap gradually increased from 1.38 eV (FeS2) to 1.64 eV (Ni@Cu = 10 at %) while at higher doping the band gap was decreased to 1.53 could be due to incomplete doping. So, the band gap of FeS2 can be tuned in between 1.38 and 1.64 eV by simultaneous Ni@Cu doping could be a suitable candidate for absorber application in solar cell devices. The other optical constants (dielectric constants, refractive index and extinction coefficient) explicitly carried out using SE measurement. Interestingly, progressing the absorption nature and bang gap in the visible region disclose a significant impact on the optical properties for optoelectronics applications.

Influence of deposition conditions on structural, electrical, and optical properties of cadmium oxide thin films deposited using the spray pyrolysis technique

In this study, thin films of cadmium oxide (CdO) were deposited on soda-lime glass substrates using the simple spray pyrolysis technique using a cadmium acetate precursor. The results regarding the structural, electrical, and optical properties of the layers as a function of the substrate temperature ranging from 280 to 340 °C, spray rate ranging from 5 to 20 ml/min, and volume of solution ranging from 50 to 125 ml were systematically studied. The X-ray diffraction (XRD) analysis revealed that all the thin films had a polycrystalline nature with the fcc structure of single-phase CdO. The analysis also showed peaks related to (111), (200), (220), and (311) planes. The field emission scanning electron microscopy (FE-SEM) images showed that the morphology surface of the thin films was spherical. The atomic force microscopy (AFM) analysis demonstrated that the roughness of thin films ranged from 21.16 to 60.9 nm. The Hall effect and thermoelectric studies revealed that the films exhibited an n-type conductivity. The Hall effect measurement study also showed that the carrier concentration (n) and carrier mobility were of the order of 1019 cm− 3 and 10− 2 cm− 2/v s, respectively. The obtained values for the optical bandgap ranged from 2.29 to 2.56 eV, where the amount of the optical bandgap for the thin films decreased as the substrate temperature increased.

Influence of substrate temperature on physical properties of MnSbInS4 thin films prepared by a simplified spray pyrolysis technique for photovoltaic applications

MnSbInS 4 multi-component semiconductor thin films are prepared by chemical spray pyrolysis on glass substrates at various substrate temperatures ranging from 250-400 °C with a constant spray time (5mins). The structural, morphological, optical and electrical properties of the thin films are investigated through different techniques such as X-ray diffraction (XRD), electron diffraction spectroscopy (EDS), UV-Vis absorption spectroscopy and four probe method. The X-ray spectra reveal that the MnSbInS 4 films are polycrystalline in nature with a cubic spinel structure having (220) plane as the preferred orientation. The energy dispersive analysis by X-ray (EDS) studies confirm the presence of Mn, In, Sb and S in the film grown at a substrate temperature of 250 °C. Optical measurements allow us to determine the absorption coefficient which is as high as (1.22 x 10 5 cm -1 ) at 250 ºC indicating that MnSbInS 4 compound has an absorbing property favorable for applications in solar cell devices. It is interesting to note that the structural homogeneity and crystallinity of the films is improved due to the decrease in absorption coefficient (α) and extinction coefficient (k) with an increase of substrate temperature. The observations from photoluminescence measurements reveal that the photoemission is mainly due to the donar-acceptor pair transitions. Moreover, from the electrical studies, it is observed that the electrical resistivity (ρ ) is strongly affected by substrate temperature and the lowest resistivity (ρ = 4.77 x 10 3 Ω m ) is obtained for the film grown at 400 ºC. Stylus profilometer was used to measure the film thickness and the values range between 768 nm (250 °C) to 617 nm (400 °C). This indicates that, as the substrate temperature increases, the thickness of the film decreases. Other important parameters like micro-strain (ε) and dislocation density (δ) which are commonly used to describe the structural analysis are also presented.

Optical constants and dispersion energy parameters of Zn-doped TiO2 thin films prepared by spray pyrolysis technique

The present work describes the deposition and investigation of structural and optical characteristics of bare and doped TiO2 thin films. The TiO2 products are obtained through simple and cost effective spray pyrolysis technique (SPT) using titanium (IV) butoxide as Ti precursor. The impact of Zn doping on the crystal structure and phase formation is studied by X-ray diffraction (XRD) analysis. The formation of anatase phase relative to pure TiO2 along with preferred orientation along the [101] direction is confirmed with the help of XRD analysis. Zn doping into TiO2 lattice network leads to an identical diffraction pattern. A deterioration of crystallinity is obtained in crystallite size employing the numerous methods such as Scherrer method, Williamson–Hall, Halder–Wagner and Wagner–Agua analysis in accordance with Zn. In addition, absorbance results obtained from UV–vis spectroscopy has been exerted to examine the optical characteristics. It is noted that the dopant introduction has an impact on the optical properties and the direct band gap value obtained from Tauc relation exhibits a red shift with Zn content. The influence of the Zn doping elements on the optical constants of TiO2 product has been investigated. The dielectric constants, dispersion parameters, loss factor and distribution of volume and surface energy loss of the TiO2 products have been computed as well. The as-prepared nanostructured Zn-doped TiO2 thin films can be used as potential candidates for different optoelectronic devices

ZnO Thin Films Prepared Using the Ultrasonic Spray Pyrolysis Method for High Performance Metal Oxides-Based Photoconductors

Zinc oxide (ZnO) has attracted considerable attention because of its potential applications in optoelectronic devices. Many scientists have reported on the preparation of ZnO based photodetectors in metal-semiconductor-metal (MSM) structures where expensive noble metals are used as electrodes. Here, we propose the preparation of full metal-oxide photoconductors by using indium tin oxide (ITO) as the electrodes and ZnO thin films as sensing materials. ZnO thin films were prepared by employing a simple ultrasonic spray pyrolysis (USP) technique with a commercial ultrasonic nebulizer (1.7 MHz). In this work, we developed a high performance ZnO based photodetector on interdigitated ITO with a simple and low-cost USP method. The I-V characteristic shows that ZnO thin film works in a photoconductive mode and has better performance as a UV (325 nm) detector than other wavelengths (505, 625 and 810 nm). As a UV detector, the devices exhibit high sensitivity (1255.51%), high responsivity (22.6 x 103 A/W), high detectivity (1.49 x 1014 Jones), good stability, a fast response time of 0.87 s and a relatively slow recovery time of 34.8 s. This high performance may be related to the large crystallite size that facilitates higher electron mobility.

Structural, morphological, optical and magnetic properties of sprayed NiO thin films by perfume atomizer

Nickel oxide (NiO) thin films were grown on glass substrates by a simplified spray pyrolysis technique using perfume atomizer at different substrate temperatures which is the novelty of this work. X-ray diffraction patterns reveal the cubic crystalline phase pure NiO film with preferential orientation along (2 0 0) plane. Thermal treatment of NiO thin films at 400 °C enables us to identify a suitable deposition temperature for obtaining good quality thin films. The average crystallite size calculated from Scherrer’s formula is found to be 28 nm. The closely packed and spherical shaped grains obtained were confirmed from field emission-scanning electron microscope (FE-SEM). From FE-SEM analysis, the smooth nature of NiO thin films deposited at 400 °C enables it to use for solar cell applications, whereas the porous nature of NiO thin films deposited at 300 °C enables it to use for gas sensing applications. The mean square roughness increased with substrate temperature is confirmed from atomic force microscope analysis. The average transmittance of 75–85% demonstrates the compactness of the film except for the film N400, which is attributed to the defects. The energy band gap (Eg) is found to be 2.93, 3.63, 3.72, and 3.67 eV, respectively, for NiO thin film deposited at substrate temperature 300 °C, 350 °C, 400 °C, and 450 °C. The Raman peak at 1573 cm−1 corresponds to 2 M band antiferromagnetic state. The presence of defect states is identified from PL and EPR spectra.

Structure, morphology and optical parameters of spray deposited CZTS thin films for solar cell applications

Objectives: To develop simple method for Cu2ZnSnS4 (CZTS) thin film deposition suitable for solar cell device application. Method: Cu2ZnSnS4 (CZTS) thin film was deposited by using simple chemical spray pyrolysis technique for substrate temperature (270±5) ◦C. Analytical reagent Grade 0.025 M Copper chloride (CuCl2), 0.0125 M zinc chloride (ZnCl2), 0.0125 M Tin chloride (SnCl4.5H2O) and 0.05 M Thiourea (SC (NH2)2) were used as sources of copper (cu+ ), zinc (Zn+), tin (Sn+ ) and sulfur (S- ) ions respectively. The structure, morphology and optical band gap of the film were investigated by using X-ray Diffractometer (XRD), Scanning Electron Micrograph (SEM) and UV-Visible spectroscopy respectively. Energy dispersive X-ray Analysis (EDX) was used for elemental analysis of deposited CZTS film. Findings: The XRD spectra showed that CZTS film exhibit polycrystalline tetragonal crystal structure with preferential orientation along (112) plane. The crystallite size calculated using full width at half maximum (FWHM) of (112) peak was to be 36.82 nm. SEM image revealed that film composed of regular arrangement of spherical granules of average size 1.61 µm. The purity of the CZTS phase was confirmed by elemental analysis. The calculated energy band gap (Eg) by using Tauc\'s plot was about 1.62 eV. The dc resistvity estimated by using IV characteristics of the CZTS film was to be 2.3× 10-2 Ω-cm. It is concluded that CZTS film prepared using present deposition technique can be used for solar cell device applications. Keywords: Chemical spray technique; CZTS Thin Films; band gap; structure of CZTS; electrical resistivity; elemental analysis

Highly efficient and Reusable ZnO microflower photocatalyst on stainless steel mesh under UV–Vis and natural sunlight

The photocatalytic process is used to remove organic contaminants, dyes, industrial sewage from wastewater before reusing it for human consumption again. Here a simple cost-effective ultrasonic spray pyrolysis (USP) technique is used to deposit ZnO microflower on glass and stainless steel (SS) mesh in a single step. X-Ray Diffraction (XRD) and Raman spectroscopy indicate the polycrystalline wurtzite nature of ZnO. Field emission scanning electron microscope (FESEM) shows the ZnO microflower structure. PL and XPS studies show the oxygen defect in the films. Photocatalytic degradation results show that methylene blue (MB) dye with 1 × 10−5 M concentration can be degraded around 97.94% and 85% in 120min and 210 min with a degradation rate of 0.03035 min−1 and 0.00917 min−1 respectively using ZnO deposited on SS mesh and glass substrate in both UV–Vis and sunlight condition. ZnO deposited on SS mesh shows high repeatability performance to degrade the MB and it can degrade 96% of MB at 10th cycle. Degradation rate at base medium is higher than acidic medium. A plausible photocatalysis mechanism is also explained.

Effect of surface roughness on the solar photothermal conversion efficiency of spray-coated CuCo2O4 films

Mixed transition metal oxide films are emerging as efficient and inexpensive potential alternatives to multilayer cermet spectrally selective coatings. However, to replace the current standards involving a complex metal–dielectric structure, oxides must be optimized in terms of their electronic structure and mainly their film morphology. In the present work, a simple ultrasonic nebulized spray pyrolysis technique is used to deposit CuCo2O4 films for solar absorber coatings. Their photothermal efficiencies are studied for solar thermal energy harvesting for different film thicknesses obtained by varying the deposition time. The film surface attributes are studied using atomic force microscopy and scanning electron microscopy. The films deposited for 5 and 10 min show relatively high visible absorptance (∼0.79) and relatively low thermal emittance (∼0.1) and thus are promising candidates for spectrally selective coatings. Meanwhile, increasing the deposition time (>10 min) increases the thickness, thereby increasing the solar absorptance. However, this results in an uncontrolled increase in the surface roughness, which affects the spectral selectivity adversely, leading to the films having higher thermal emittance of between 0.1 and ∼0.25. Analysis of the specular reflection contribution shows that this deterioration is governed predominantly by interference effects due to surface attributes. This study is important for the technological applications of spectrally selective coatings and makes a significant quantitative contribution to emphasize the importance of surface morphology in optics.

First investigation on (Ni, Co) co-doping effects on the physical properties of Fe2O3 thin films for optoelectronic applications

A simple chemical spray pyrolysis technique was used to fabricate Ni and Co co-doped Fe2O3 thin films. All the co-doped layers are formed of α- Fe2O3 phase. The influence of the dual doping on the physical properties of the as deposited layers was investigated. The SEM and CM images revealed that co-doping changed the surface morphology of the Fe2O3 films. The main particle shape and size were significantly influenced by each dopant. The Optical measurement showed that the band gap varies in the range of [1.99–2.16] eV for direct transition and in the domain of [1.87–1.96] eV for indirect transition, it is affected by the dopant concentrations. The photocatalytic degradation of methylene blue dye under sunlight irradiation was investigated for all the grown layers. The obtained result showed high photocatalytic efficiency. The (Ni 2%, Co 1%) co-doped Fe2O3 thin films showed a degradation efficiency around 50 % after 2 h of sunlight irradiation.

P to n-type transition with wide blue shift optical band gap of spray synthesized Cd doped CuO thin films for optoelectronic device applications

CuO thin film has a wide variety of potential applications due to distinctive optical properties and native p-type electrical conductivity. The weak p-type electrical conductivity of CuO thin film can be modified via doping suitable elements into it. In this work, we acquired n-type electrical conductivity in the CuO thin film by cadmium (Cd) doping for the first time. Pristine and Cd doped CuO thin films are fabricated at 325 ºC using a simple spray pyrolysis technique with different doping concentrations (i.e. x = 0.00, 0.02, 0.04, 0.06 and 0.08). X-ray diffraction (XRD) spectra of Cd doped CuO thin films match to the polycrystalline with a monoclinic structure and no peak corresponding to Cd impurity or non-stoichiometric phases are found in the XRD pattern. Based on the XRD patterns, the average crystallite size is obtained from 15.12 to 30.53 nm. Furthermore, a closely-spaced nanoparticle is confirmed by the field emission scanning electron microscopes (FESEM). The energy dispersive analysis X-ray spectra (EDAX) demonstrate the effect of substitutions of Cu2+ ions by Cd2+ ions in the pristine CuO lattice network. Hall Effect measurements reveal that the p-type conductivity of CuO thin films alters to n-type as a result of Cd doping. The electrical resistivity of Cd doped CuO thin films upraise with the reduction of carrier concentration and increment of carrier mobility with the increase of Cd concentration in the films. An increment of transmittance and broadening of the blue shift optical band gap is possessed in CuO thin films via Cd doping and found as a promising material for a wide range of optoelectronic device applications.

Photoelectrocatalytic degradation of Rhodamine B using N doped TiO2 thin Films

Highly transparent Nitrogen doped Titanium dioxide (N-TiO2) thin films are deposited onto glass/FTO substrates at optimized substrate temperature 450°C by using a simple chemical spray pyrolysis technique. The N-TiO2 thin films are characterized for their photoelectrochemical, structural, morphological and optical properties using PEC, XRD, SEM, and UV-Vis. spectrophotometer. The PEC study shows that both short circuit current (Isc) and open circuit voltage (Voc) for the doping concentration at 1.5 at. % are relatively maximum (Isc = 0.72 mA and Voc = 520 mV). X-ray diffraction studies show that films are polycrystalline with a tetragonal crystal structure. The scanning electron micrograph shows that the films are uniform, compact and with randomly distributedgrain size varying from 20 to 60 nm. The observed direct band gapsare about 3.4 and 3.37 eV for typical TiO2 and N-TiO2 thin films respectively.

Tailoring the properties of nebulizer spray pyrolysis coated FTO thin films through rare earth element terbium for optoelectronic applications

In optoelectronic device, transparent conducting oxide (TCO) acts as an electrode. In this work the rare earth element terbium (Tb) was doped with FTO by simple and inexpensive nebulizer spray pyrolysis (NSP) technique. Structural, optical end electrical properties were investigated for all the synthesized films. X-Ray diffraction (XRD) analysis confirmed that all the prepared films exhibited polycrystalline nature with tetragonal crystal structure and size of the crystalline reduced with increasing Tb concentration. Raman active doubly degenerate mode (Eg), IR active mode (Eu) and vibration mode (B2g) were found from Raman analysis. Atomic force microscope (AFM) images visualises the granular sized particle and the roughness of the Tb doped films. Elememental analysis spectrum exhibited Sn, O, F and Tb elements for 1.5 wt.% Tb doped thin film. Photoluminacence (PL) analysis revealed that UV, blue and green (visible) emission and UV emission intensity was reduced systamatically for the doped films. From UV–Vis analysis, highest optical transmittace were deduced for 1.5 wt.% Tb doped film. Reflectance, absorbance and band gap also been observed for the prepared films. Refractive index, extinction coefficient and dielectric constant values were decreased with increasing Tb doping concentration. High electrical conductivity and carrier concentration were measured using four probe hall effect system. Figure of merit value for the 1.5 wt.% Tb doped film is 1.5 × 10−3 Ω-1 and therefore the prepared film suits to be an electrode in optoelectronic devices.

Precursor nature and molarities effect on the optical, structural, morphological, and electrical properties of TiO2 thin films deposited by spray pyrolysis

Titanium oxide thin films were deposited by a simple and low-cost spray pyrolysis technique using two different precursors: Titanium chloride (TiCl3) and Titanium Tetra-isopropoxide (TTIP) on glass substrates. X-ray diffraction shows that most of the TiO2 thin films are amorphous in structure. The optical transmittance of the sprayed TiO2 films deposited from Titanium chloride is in the range of 80 % and for the films deposited from TTIP, it attains 90 % in the visible region. The optical band gap energies of the films deposited from TiCl3 and TTIP are about 3.5 and 3.7 eV respectively. The electrical resistivity of the films varies from 3.2*103 to 4.6*104 (Ω.cm) for the films prepared from TiCl3 precursor and 9.4*102 to 6.5*103(Ω.cm) for the films prepared from TTIP precursor.

An effect of lanthanum doping on physical characteristics of FTO thin films coated by nebulizer spray pyrolysis technique

In order to enhance the optoelectronic properties of the FTO material, the rare earth element lanthanide (La) was doped at various doping concentrations (0–1.5 wt. %) by a simple and low-cost nebulizer spray pyrolysis (NSP) technique. X-ray diffraction, Raman spectrum, AFM, EDAX, UV–Vis, Photoluminescence (PL), and Hall Effect measurements were used to study the influence of La on FTO. From the XRD, the films prepared were polycrystalline with the tetragonal crystal structure. By increasing La doping concentration, the intensity of the predominant peak (110) and the crystalline size were decreased. The peaks at 467 cm−1, 573 cm−1, and 780 cm−1were observed in low-frequency regions associated with Eg, Eu, and B2g vibration modes respectively. AFM study confirmed the decreasing nature of the surface roughness for the doped films. 1.5 wt. % of La-doped thin film showed high optical transmittance, minimum reflectance with absorbance and further noticed that the increasing band gap values (3.75eV–3.92eV) with increasing La content. The values of the refractive index, extinction coefficient, the real and imaginary part of dielectric constants were calculated and discussed in detail. Photoluminescence spectra displayed the highest emission peak at 370 nm is due to near band edge emission. Hall measurement showed high carrier concentration (7.14 × 1019 cm−3) and low resistivity (3.04 × 10−3 Ω cm) values for 1.5 wt. % La-doped film. The figure of merit 1.1 × 10−3 Ω-1 was also obtained for the same film which perfectly can be used for optoelectronic devices.