Abstract
Cadmium oxide (CdO) film was developed using a chemical spray pyrolysis technique on the p-type silicon (p-Si) substrate. The solution of the CdO was obtained by dissolving cadmium acetate salt in a mixture of distilled water and methanol. High-quality Au and Al contacts were evaporated on the polished and unpolished side of p-Si, respectively to create 4Au/CdO/p-Si/Al device architecture. In this context, four Au/CdO/p-Si/Al devices that were arbitrarily favored were analyzed and compared in depth. Current-Voltage (I-V) measurements were carried out to find out the performance of the CdO interlayer in the Au/p-Si device. The obtained data were analyzed using the Thermionic emission theory, Norde, and Cheung approach. Results indicated that CdO films grown by simple chemical spray pyrolysis technique could be used as barrier modifiers in Au/p-Si rectifier device.
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