Silicon Carbide Research Articles

Ultra-wide Bandgap AlGaN Channel HEMTs for Portable Power Electronics Applications

AlGaN channel (Eg>3.4 eV) is the most effective method for enhancing the breakdown field of the group III-nitride based HEMTs. This work demonstrates the potential of AlGaN double channel HEMTs on Silicon carbide substrate. The device DC characteristics are investigated using numerical simulator by using drift-diffusion transport model. The AlGaN double channel HEMTs enhances the total 2DEG density due to double potential well and shows better current driving capability (IDS) of 0.714 A/mm, transconductance (gm) of 116 mS/mm, and low specific ON-resistance (Ron) of 3.262 Ω.mm. The AlGaN double channel HEMT on Silicon carbide substrate exhibited 680 V blocking voltage (VBR) and gate field plate HEMT shows 532 V. The effective reduction in electric field at the gate edge is the major source for elevated breakdown voltage in field plate HEMTs. The superior DC characteristics indicates the proposed wide bandgap channel HEMT is suitable device for future portable power converters.

Assessment of impact load effect on self-sensing of cement composites incorporating hybrid silicon carbide-graphite under various environmental conditions

This study investigates the self-sensing abilities of hybrid silicon carbide-graphite cement composites (HSCGC) under various environmental conditions, focusing on dynamic impacts. Integrating silicon carbide (SiC) and graphite enhances the mechanical and electrical properties of these composites. Tests showed that composites with 30 % SiC and 2 % graphite had a 14.1 % increase in compressive strength and up to 85 % decrease in electrical resistivity. Water absorption reduced by 3.25 %, indicating better durability. Impact resistance ratios (IRR) varied with humidity and impact angles, with the highest IRR observed at 70 % humidity and a 30-degree angle. Self-sensing responses indicated that higher SiC and graphite content maintained stable conductivity, especially at 60 and 90-degree angles. Temperature changes affected resistivity, negligible at −10°C and increased at 45°C. The study concludes that HSCGCs are suitable for smart construction materials, capable of real-time environmental and structural monitoring, advancing predictive models and control systems.

Production of lightweight geopolymer concrete with foam glass aggregate derived from cathode-ray glass waste

This work focused on producing an eco-friendly lightweight structure by recycling the cathode ray tube glass waste (CRT-GW)to prepare a foam glass aggregate (FGA) and using metakaolin to prepare a geopolymer binder (GP). The geopolymer binder replaces cement to decrease the release of gas generated during cement production. The silicon carbide (SiC) was used as a foaming agent at 1 wt% to prepare the FGA. The foaming temperature effect was investigated for the FGA characterization included: bulk density, volume expansion, apparent porosity, uniaxial compressive strength, and leaching tests for lead and barium. The foam glass aggregate was sintered at different temperatures 725 °C, 750 °C, 775 °C, and 800 °C. These temperatures were selected depending on heating microscopy analysis results, where the maximum expansion height was 119 % at 800 °C. The main characterization ranges of foam glass were: bulk density 0.58–1.26 g/cm3, volume expansion 8–77 (vol%), uniaxial compressive strengths 1.55–9.98 MPa, and thermal conductivity 0.063–0.097 W/m.K.The lightweight geopolymer (LWGP) was prepared with 30 vol% of FGA sintered at different temperatures and 70 vol% of GP. These samples hardened at room temperature. The bulk density and compressive strength were measured for the lightweight geopolymer samples after a curing time of 28 days. A higher compressive strength was 9.11 MPa with a bulk density of 1.21 g/cm3 for lightweight geopolymer-containing foam glass aggregate sintered at 775 °C.

Thermal characterization of plat heat exchanger made from polymer biocomposite reinforced by silicon carbide

Thermal characterization of plat heat exchanger made from polymer biocomposite reinforced by silicon carbide

Phonon-polariton Bragg generation at the surface of silicon carbide

Phonon-polaritons are known to emerge at the surface of solids under infrared (IR) irradiation at frequencies close to the optical phonon resonance. Metal, patterned on the top of the polariton-active surface, locally blocks the excitation of surface waves due to plasmonic screening and can be used for the design of wave patterns. We excite polaritonic waves at the surface of SiC under the irradiation of a CO2 laser (λ∼10μm) and visualize them using apertureless near-field interference scanning probe microscopy. From the near-field scans in the vicinity of gold film periodical strip structures, we identify the Bragg scattering (diffraction) outside the grating with the contribution from separate strips coherently summed up, provided that the wavelength matching condition is fulfilled. The observed phenomena agree with wavefield calculations. Our observations demonstrate the potential of metal-patterned silicon carbide for the fabrication of on-chip polaritonic IR circuits.

Atomistic understanding on the surface formation mechanism of nanoscale scratches along different crystal orientations of silicon carbide

Single crystal silicon carbide has been widely used in many fields due to its excellent physical and chemical properties. However, these special properties of silicon carbide can lead to surface defects and subsurface damage in precision machining processes. In this research, high-speed scratching experiments and molecular dynamics simulations were used to study the surface formation mechanism of nanoscale scratches along the [1-210] and [1-100] crystal orientations of silicon carbide. For both the simulations and experiments, different scratching crystal orientations result in the formation of different amorphous patterns. The angle between the scratching orientation [1-210] and the amorphous pattern is 60°, while the angle between scratching orientation [1-100] and the amorphous pattern is 30°. The stress concentration during the scratching process along the orientations [1-210] and [1-100] is mainly located at the two edges and one edge of the amorphous patterns, respectively. The amorphous patterns along the < 1-210 > directions on the (0001) plane are caused by dislocations and slips on the {10-10} plane. This study reveals the material deformation mechanism and removal mechanism of silicon carbide along different crystal orientations scratching, providing theoretical guidance for the nanoscale machining of silicon carbide.

A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics.

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of information has become a consensus, new materials continue to be sought to expand the application range of semiconductor devices. Among them, research on wide bandgap semiconductors has already achieved preliminary success, and the relevant achievements have been applied in the fields of energy conversion, display, and storage. However, similar to the history of Si, the immature material grown and device manufacturing processes at the current stage seriously hinder the popularization of wide bandgap semiconductor-based applications, and one of the crucial issues behind this is the defect problem. Here, we take amorphous indium gallium zinc oxide (a-IGZO) and 4H silicon carbide (4H-SiC) as two representatives to discuss physical/mechanical properties, electrical performance, and stability from the perspective of defects. Relevant experimental and theoretical works on defect formation, evolution, and annihilation are summarized, and the impacts on carrier transport behaviors are highlighted. State-of-the-art applications using the two materials are also briefly reviewed. This review aims to assist researchers in elucidating the complex impacts of defects on electrical behaviors of wide bandgap semiconductors, enabling them to make judgments on potential defect issues that may arise in their own processes. It aims to contribute to the effort of using various post-treatment methods to control defect behaviors and achieve the desired material and device performance.

The non-destructive control of mechanical properties of ceramics on the silicon nitride and silicon carbide based by acoustic emission method

The acoustic emission (AE) in reaction bonded SiC and Si3N4 ceramics and hot pressed Si3N4+TiN composites were investigated during the bending tests. A clear correlation between some AE parameters and specimen strength was established for all materials. Two methods for non-destructive control of materials strength have been proposed. High accuracy of control (error not more than 3%) in comparison with traditional estimation by sample average (error of 15% and higher) was observed.

Enhanced SiC/NFG/Ni ternary composite microwave absorbing materials with micro-network structures produced by selective laser sintering

In this paper, a ternary composite wave-absorbing material consisting of silicon carbide (SiC), natural flake graphite (NFG) and nickel (Ni) has been successfully fabricated through a combined process of selective laser sintering (SLS) and vacuum pressure impregnation. The study investigated how the content of SiC powder affected the absorption capacity and mechanical performances of the composites. The findings indicate that as the proportion of SiC powder rises, the porosity of the composites diminishes, while the bending strength increases. As the content of SiC is 40 wt%, the porosity is 52.14 % and the flexure strength is 9.58 MPa, approximately five times greater than that of graphite-type ceramic preforms. The composite’s electromagnetic wave-absorbing capability initially improves and then declines with the increase of SiC content. When the SiC content is 10 wt% and the thickness is 1.5 mm, the composite absorbing material exhibits optimal electromagnetic absorption performance, with a minimum reflection loss (RLmin)of −44.04 dB and an effective absorption bandwidth (EAB) of 5.42 GHz (8.24–13.66 GHz). The composite material, characterized by its lightweight, high strength, and broad frequency range, shows promise for applications in microwave absorption technology.

Design and vibration test of first mirror mount assembly for ITER divertor VUV spectrometer

The divertor vacuum ultraviolet (VUV) spectrometer is a diagnostic system in the ITER tokamak, monitoring impurity content and behavior in the divertor region. The first mirror of the spectrometer, made of silicon carbide (SiC), is exposed to harsh environmental conditions, including high temperatures and significant inertial loads from electromagnetic disruption events. To ensure its reliable performance, we have designed and tested a robust mirror holder assembly. This paper introduces a novel design of the first mirror holder assembly for the ITER divertor VUV spectrometer and presents the results from comprehensive vibration tests conducted on a full-scale mock-up. The design features a double-holder structure with spring plate assemblies to accommodate thermal expansion and resist vibrational loads. The mock-up underwent a series of resonance search, sine dwell, and random vibration tests, replicating the expected loads during vertical displacement events in ITER. The mirror holder assembly and the dummy mirror successfully withstood the vibration tests without damage, validating the design for the ITER environment. The results demonstrate the robustness and reliability of the mirror holder assembly, ensuring the accurate and reliable operation of the divertor VUV spectrometer in ITER.

Threshold voltage instability of SiC MOSFETs under very‐high temperature and wide gate bias

AbstractThreshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperature range (150°C to 275°C). The degradation mechanism of gate oxide under coupling of different electrical and thermal stress is revealed. When the device is subjected to +VGS, the relationship between VTH shift and temperature is not monotonic and there is a temperature turning point. This is mainly related to the capture/release and generation of electron traps. However, the VTH shift increases sharply and gate oxide breakdown for the device bias at +35 V, which is related to Fowler–Nordheim (F–N) tunnelling effect. For a large −VGS, the VTH shift is very small. Moreover, when the negative VGS decreases, the VTH shift is positively correlated with temperature, which may result from the activation and charge exchange of hole traps. However, the influence of moving ions changes the temperature dependence of VTH shift for the device bias at −30 V. Finally, the devices of different manufacturers are studied and similar change patterns are found. This finding provides guidance for the further application of SiC MOSFETs under high temperatures and different voltages.

Step-by-step silicon carbide graphitisation process study in terms of time and temperature parameters

This work investigates the temperature and time as key parameters for graphene formation on the silicon carbide surface during the high thermal decomposition process. Measurements were performed using various experimental techniques under ultra-high vacuum conditions. The graphitisation process was divided into various stages, after which the surface chemical composition and atomic structures were analysed in detail. It has been shown that despite the known theory of graphitisation mechanism and initial condition for occurrence of this process, the application of different temperatures and heating times affect the quality and quantity of formed graphene layers. Applying a temperature too low or annealing the sample for a too short time led to an inefficient silicon sublimation process. On the other hand, too high temperature during flashing modifies the visibility of surface structures, which may be crucial for other investigations and potential applications of such systems.

Molecular dynamics investigation of nano-polishing on silicon carbide substrate with rough topography using a rotating diamond abrasive

To achieve low-damage polishing on silicon carbide substrates utilizing a rotating diamond abrasive, the molecular dynamics model for nano-polishing is established. The nano-polishing simulation of silicon carbide substrates with both smooth and rough topographies is conducted using the diamond abrasive at two different velocity ratios. The constructed MD models are compared with existing models to assess the influence of abrasive rotation and substrate topography. The results provide valuable insights into the nano-polishing. Firstly, improving substrate smoothness and increasing abrasive rotation can effectively reduce von Mises stress, force, temperature, and amorphous layer thickness. Secondly, the atomic motion within silicon carbide substrates is affected by abrasive rotation and substrate topography, thus altering the removal mechanism. Finally, the differences in friction coefficient between the constructed MD models and existing models arise from atomic adhesion and plie-up phenomena.

Oxidation anisotropy of 4H-SiC wafers during chemical-mechanical polishing

4H silicon carbide (4H-SiC) wafers are widely used in high-power, high-temperature, and high-frequency electronics owing to their excellent physical and electrical properties. In the processing of 4H-SiC wafers, chemical-mechanical polishing (CMP) is commonly employed to realize atomic-scale smoothness, damage-free surface, and global planarization. The CMP process is the synergy of wet oxidation and mechanical grinding, whose efficiency significantly relies on the oxidation process. Therefore, understanding the wet oxidation mechanism of Si face and C face of 4H-SiC wafers is critical to high-efficiency double-side CMP. In this work, the anisotropic CMP performance of Si face and C face of 4H-SiC wafers are investigated. It has been found that the material removal rate of the C face is 2–3 times that of the Si face. The thicknesses of the transient oxide layer on the C face and Si face are 8.71 nm and 3.50 nm, respectively. X-ray photoelectron spectroscopy analysis reveals that the oxygen content on the C face is higher than that on the Si face after wet KMnO4 oxidation. This indicates that the C face of 4H-SiC is easier to oxidize, which results in more oxides that that on the Si face of 4H-SiC. Our work shows that accelerating the oxidation of the Si face of 4H-SiC wafers during the simultaneous double-sided CMP process is crucial for the efficient polishing of 4H-SiC wafers.

Investigation of PCVSi− defect in 4H–SiC as a candidate for a qubit

Abstract Exploration of spin defects in semiconductors for possible qubits encourages the development of the quantum field. Silicon carbide (SiC) is a suitable platform to carry spin defects, due to its excellent electrical, mechanical and optical properties, together with its convenience for crystallographic growth and doping processes. In this study, a negatively charged phosphorus-vacancy (PCVSi −) defect, consisting of a silicon vacancy and nearby substitution of a phosphorus atom to a carbon atom in 4H–SiC, is investigated by first-principles calculations. This defect is demonstrated to possess a high spin (S = 1) with relatively low formation energy. Computed zero-phonon line energy and zero-field splitting parameters of this defect are close to those of neutral divacancy (VCVSi 0), negatively charged nitrogen-vacancy center (NCVSi −) and some other color centers, which indicate a similarity of both optical and spin properties among them. Moreover, the electron spin coherence time of this defect turns out to be 1.15–1.40 ms. Such a long coherence time provides the defect with reliability for quantum information processing. Our results show that the PCVSi − defect can be a promising candidate for a qubit.

Integrating material flow analysis and supply chain resilience analysis to study silicon carbide

AbstractSilicon carbide (SiC) is a niche nonmetallic material that is essential in many industrial processes. Here, we integrate material flow analysis and supply chain resilience analysis to understand global SiC stocks and flows and to assess its supply chain. We use industry interviews to fill data gaps and collect information on the SiC system to overcome data scarcity. We find that globally around 1000 kt of SiC is produced each year. The biggest use of SiC is the abrasives industry (40%), followed by metallurgy (28%), refractories (20%), technical ceramics (0.7%), other uses (0.7%), and semiconductors (0.01%). As an energy‐intensive material, the SiC supply chain is under pressure, increasing the relevance of resilience considerations. Besides typical supply chain risks such as low diversity of supply and geopolitical trade restrictions, SiC particularly faces risks due to its energy‐intensive production process and associated emissions. In the SiC semiconductor supply chain, losses of nearly 75% are a particular issue. Due to high demand in the SiC market, stockpiles are negligible, and substitution is difficult in most sectors. We find that in the case of SiC, sustainability measures such as use reduction, recycling, or decreasing energy use or emissions would also positively contribute to supply chain resilience. This article met the requirements for a gold‐gold JIE data openness badge described at http://jie.click/badges.

Non-linear AC dielectric properties of epoxy composites filled with core–shell SiC particles

Abstract Core–shell structured silicon carbide (SiC)/epoxy (EP) composites exhibit superior non–linear DC conductivity. However, the high voltage alternative current dielectric properties of the composites are rarely reported. In this paper, the time–domain measurement was employed to obtain the basic dielectric characteristics, AC conductivity, and relative permittivity of the SiC/EP and SiC@Al2O3/EP composites under less than the breakdown strength of the SiC/EP (i.e. the amplitude of 1–5 kV mm−1). In addition, in the high AC electric field (i.e. the amplitude of 6–20 kV mm−1), the non–linear AC dielectric properties of the SiC@Al2O3/EP composite are also investigated. The experimental results suggest that the SiC@Al2O3/EP composite shows more obvious non–linear AC dielectric properties than the SiC/EP composite. In the high AC electric field, the AC conductivity of the SiC@Al2O3/EP composite presents the relaxation phenomenon, which is attributed to the excitation field and its derivative. This work lays a foundation for further research on the AC steady–state and transient dielectric properties of the field grading materials, which are widely used to homogenize the nonuniform electric field distribution in many electrical and electronic equipment.

Finite Element Simulations and Statistical Analysis for the Tribological Design of Mutually Textured Surfaces and Related Experimental Validation

Abstract In the last few decades, micro-texturing has become a widely studied technique to modify the frictional behavior between surfaces in both dry and lubricated regimes. Among all the available techniques, the laser surface texturing appears to be fast, clean, and flexible, and thus a good candidate in realizing surface micro-patterns, also for the improvement of the tribological performance of automotive components when subjected to dry friction. For this reason, in the present work, the tribological response of four different patterns of micro-holes on two contrasting materials, specifically silicon carbide and carbon black have been investigated with a coupled experimental–numerical approach. The static and the dynamic friction coefficients have been extracted from the 25 different combinations of these surface textures including the flat counterparts. Then, the influence of the holes diameter, their density, and the material has been studied thanks to a multivariate linear regression. Specifically, it emerged that, in a dry regime, the most emerging parameter is the micro-holes diameter, for both static and dynamic frictions. Moreover, for both static and dynamic frictions, the material which more influences the effects of patterns to the overall frictional behavior is here the stiffest one. These insights for the design of micro-patterned surfaces with controlled frictional properties could be useful for those applications in which a dry friction regime is present.

Development of a silicon carbide radiation detection system and experimentation of the system performance

Silicon carbide (SiC) detectors have excellent radiation detection capabilities for various radiation particles, including high energy resolution, fast response times, and good radiation resistance. A SiC radiation detection system was developed to measure the neutron fluence rate and the γ-ray dose rate in high intensity radiation fields. The system was composed of two SiC detectors, a temperature monitor, two preamplifiers for each SiC detector, a data acquisition unit with two signal channels, three pairs of communication devices, and an application software to analyze and visualize the measurement data. The two SiC detectors were fabricated based on two kinds of 4H-SiC diodes and used to respectively respond to neutrons and γ-rays. Repeated experiments showed that the two SiC detectors of the system can respond to α-particles, neutrons, and γ-rays. To verify the performance of the SiC detection system, including the response linearity of the neutron fluence rate, the measurement range of the γ-ray dose rate, and the radiation resistance of the SiC radiation detectors, the system was tested in multiple neutron and γ-ray fields. The tests results show the system can measure the neutron fluence rate from 5.64 × 10 2 cm−2 s−1 to 1.03 × 10 5 cm−2 s−1 with excellent linearity response, and the γ-ray dose rate from 0.005 Gy/h to 20 Gy/h. Furthermore, the SiC detectors demonstrated good radiation resistance. The neutron and γ-ray radiation field can still be measured stably by the system after exposure to neutron fluence of 1.07 × 10 14 cm−2 and γ-ray dose of 3.52 × 10 4 Gy. This work is the preliminary research to continue the exploration how to measure the n/γ hybrid fields accurately using SiC detectors considering the different energy of neutrons.

Understanding Environmental Barrier Coating Lifetimes and Performance for Industrial Gas Turbines

Abstract Hydrogen or hydrogen blend fuels are expected to replace natural gas in land-based industrial gas turbines (IGTs) to support a greener power economy. Silicon carbide (SiC) base ceramic matrix composites (CMCs) are considered for replacement of Ni-based superalloys to facilitate future efficiency improvements. SiC CMCs require environmental barrier coatings (EBCs) to mitigate volatilization from high-temperature steam, thus making the EBC lifetime critical information for identifying CMC component lifetimes. The goal of this project is to determine the maximum bond coating temperature underneath the EBC for achieving an IGT component lifetime goal of 25,000 h, which is far greater than current CMC component lifetime requirements for aeroturbine applications. To provide data for the lifetime model, laboratory testing used atmospheric plasma-sprayed rare-earth silicate EBCs on monolithic SiC substrates with an intermediate Si bond coating. Specimens exposed to 1-h thermal cycles in flowing air–steam environments and reaction kinetics were assessed from 700 °C to 1350 °C by measuring the thickness of the thermally grown silica scales. The silica growth and phase transformation appear critical in predicting EBC lifetime and several strategies have been explored to reduce the oxide growth rate and improve EBC durability at elevated temperatures. Advanced characterization using Raman spectroscopy has helped clarify this system.