Silicon Waveguide Research Articles

Tunable silicon integrated quantum light source with on-chip FSR-free filters

In this work, we design and fabricate a telecom band quantum light source (QLS) on a silicon photonic chip, which integrates a piece of a long silicon waveguide as the nonlinear medium for spontaneous four-wave mixing (SFWM) and five narrow FSR-free bandpass filters based on a grating-assisted contra-directional coupler (GACDC). Two optical filtering functions of the silicon integrated QLS have been demonstrated. First, the QLS supports two tunable outputs of photon pair generations by four GACDC filters. A wavelength tunable range of 6 nm is demonstrated. Second, one GACDC bandpass filter is designed as an on-chip pump filter before the silicon waveguide. The performances of the QLSs with and without the on-chip pump filter are measured and compared. It shows that the on-chip pump filter has the effect to enhance the performance of the QLS by suppressing the Raman noise photons generated when a pump light propagated in optical fibers before it is injected into the chip. These results show that FSR-free filters would play important roles in developing silicon integrated QLSs.

Subwavelength-modulated silicon photonics for low-energy free-electron-photon interactions

We investigate silicon waveguides with subwavelength-scale modulation for applications in free-electron-photon interactions. The modulation enables velocity matching and efficient interactions between low-energy electrons and co-propagating photons. Specifically, we design a subwavelength-grating (SWG) waveguide for interactions between 23-keV free electrons and ≈1500-nm photons. The SWG waveguide and electron system exhibit a coupling coefficient of |gQu| = 0.23, and as we corroborate with time-domain, particle-in-cell simulations, the system operates as a backward-wave oscillator. Overall, our results show that modulated waveguides could open the door to strong, extended interactions between photons and low-energy (10-keV-scale) electrons, like those typically present in scanning electron microscopes. Additionally, our SWG waveguide design suggests that periodic waveguides could offer intriguing dispersion engineering opportunities for tailoring these interactions.

Nonvolatile reconfigurable polarization rotator at datacom wavelengths based on a Sb2Se3/Si waveguide

Silicon photonics has become a key platform for photonic integrated circuits (PICs) due to its high refractive index and compatibility with complementary metal-oxide-semiconductor manufacturing. However, the inherent birefringence in silicon waveguides requires efficient polarization management. Here, we report a reconfigurable polarization rotator (PR) using a Sb2Se3/Si waveguide operating at datacom wavelengths (1310 nm), providing nonvolatile switching with zero static power consumption. The polarization conversion relies on the interference of hybrid electric-magnetic (EH) modes, which can be reconfigured by changing the Sb2Se3 state between amorphous and crystalline. Our experimental device exhibits a polarization conversion efficiency (PCE) and a polarization extinction ratio (PER) as high as -0.08 dB and 17.65 dB, respectively, in a compact footprint of just 21 µm length. Therefore, the proposed reconfigurable PR offers a compact and energy-efficient solution for polarization management in silicon photonics, with potential applications in data communication networks and emerging applications benefiting from polarization information encodings, such as optical neural networks and quantum computing.

Design and Analysis of Ridge and Sub-Wavelength Grating Waveguide Based Micro Ring-Resonator Sensor

The subwavelength grating microring resonator based filter shows great promise in optical sensing and communication. However, it spectrum nature makes it unsuitable for tracking or extracting a single wavelength from a broadband light source. In this paper, we used side-mode suppression, based on an angular grating- subwavelength microring resonator which offer high flexibility in wavelength design within the silicon-on-insulator (SOI) waveguide. By periodically arranging silicon waveguide pieces in three different widths, we can set the effective index along the inner sidewall of subwavelength microring resonator. thereby can achieve the precise wavelength selection. We examine the effects of various key parameters on the center wavelength, side-mode suppressed ratio, and quality factor of this filter.The proposed structure's isalso analysed for coupling strength between the bus and subwavelength grating ring resonator. The wavelength selection, compact size, compatibility with other similar nature waveguide-based devices and design flexibility highlight its significant potential in compact optical sensing and optical communication

Enhancing stimulated Brillouin scattering in suspended silicon waveguides through subwavelength nanostructuration [Invited

Brillouin optomechanics is playing a key role in the development of groundbreaking devices and novel functionalities in integrated silicon photonics, such as narrow linewidth filtering and lasers, tunable frequency, non-reciprocity, etc. Most silicon-based optomechanical waveguides, which use anchoring arms or perforated slabs to ensure mechanical stability and operate for transverse-electric polarized light, face challenges with acoustic mode leakage into the lateral Si slab, limiting the photon-phonon overlap and the Brillouin gain. Here, we propose new waveguide designs based on subwavelength nanostructuration to tailor near-infrared photons and GHz phonons and maximize the Brillouin gain. We introduce six different geometries suitable for both membrane or fully suspended configurations (i.e., without transversal arms anchoring the core to the Si slab). Our three-dimensional optomechanical simulations predict that subwavelength silicon membranes with strip, slot, and SWG slot core waveguides achieve gains up to 12257 W-1m-1 at mechanical frequencies of 12-13 GHz. Moreover, suspended silicon waveguides with SWG slots achieve a high gain of 43542 W-1m-1 at 4.45 GHz, with the ability to adjust the mechanical frequency from 4 to 9 GHz. Further enhancements in the Brillouin gain are studied by integrating side arms to amplify the moving boundaries effect in the suspended SWG slot waveguides and leveraging the slow light regime, which can significantly increase the Brillouin gain up to 17 × 106 W-1m-1 for a mechanical mode at 11.18 GHz.

Optical activation function using a metamaterial waveguide for an all-optical neural network.

In this study, we experimentally demonstrated that the nonlinear optical coefficient of the original Si can be enhanced by incorporating a metamaterial structure into an existing silicon waveguide. The two-photon absorption coefficient enhanced by the metamaterial structure was 424 cm/GW, which is 1.2 × 103 times higher than that of Si. Using this metamaterial waveguide-based nonlinear optical activation function, we achieved a high inference accuracy of 98.36% in the handwritten character recognition task, comparable to that obtained with the ReLU function as the activation function. Therefore, our approach can contribute to the realization of more power-efficient and compact all-optical neural networks.

Design of 16-wavelength heterogeneous quantum dot laser arrays with varying silicon waveguide width and grating period

Design of 16-wavelength heterogeneous quantum dot laser arrays with varying silicon waveguide width and grating period

Highly coherent mid-infrared wideband supercontinuum generation by a silica cladded silicon nitride core buried waveguide

Abstract Optical waveguides with semiconductor cores are drawing considerable research interest in the domain of supercontinuum (SC) generation in recent times. In this work, we design a square-core silicon nitride buried waveguide with a silica-clad, aiming for a wideband spectrum generation in the mid-IR region when operated at the standard telecommunication wavelength of 1550 nm. Among different such silicon nitride square-core buried waveguides, we propose a typical design with dimensions of 400 nm × 400 nm along its height and width, capable of producing a highly coherent broadband intensity spectrum ranging from 810 nm to 5441 nm after propagating through just a few millimeters of the waveguide. The group velocity dispersion maintains minimal value over a broad wavelength range in the mid-IR region, while the nonlinear coefficient is estimated to be sufficiently high. The nonlinear pulse propagation through such a waveguide leads to achieving an SC spanning over 2.76 octaves, sufficiently broader than previously reported silicon nitride-based waveguides. Furthermore, our calculations confirm the highly coherent nature of the generated SC. To the best of our knowledge, this is the first report of SC generation maintaining a high degree of coherence over such a wide wavelength range in the mid-IR zone using a square-core silicon nitride buried waveguide.

Understanding of efficient optical circuit using silicon waveguide at third communication window

Understanding of efficient optical circuit using silicon waveguide at third communication window

Bragg grating etalon-based optical fiber for ultrasound and optoacoustic detection

Fiber-based interferometers receive significant interest as they lead to miniaturization of optoacoustic and ultrasound detectors without the quadratic loss of sensitivity common to piezoelectric elements. Nevertheless, in contrast to piezoelectric crystals, current fiber-based ultrasound detectors operate with narrow ultrasound bandwidth which limits the application range and spatial resolution achieved in imaging implementations. We port the concept of silicon waveguide etalon detection to optical fibers using a sub-acoustic reflection terminator to a Bragg grating embedded etalon resonator (EER), uniquely implementing direct and forward-looking access to incoming ultrasound waves. Precise fabrication of the terminator is achieved by continuously recording the EER spectrum during polishing and fitting the spectra to a theoretically calculated spectrum for the selected thickness. Characterization of the EER inventive design reveals a small aperture (10.1 µm) and an ultra-wide bandwidth (160 MHz) that outperforms other fiber resonators and enables an active detection area and overall form factor that is smaller by more than an order of magnitude over designs based on piezoelectric transducers. We discuss how the EER paves the way for the most adept fiber-based miniaturized sound detection today, circumventing the limitations of currently available designs.

Low-loss and low-cross talk polarization-insensitive multimode silicon waveguide crossing.

A polarization-insensitive multimode silicon waveguide crossing is investigated and experimentally characterized in this Letter. By employing the particle swarm optimization (PSO) algorithm and finite difference time domain (FDTD) method, the lengths and widths of the waveguides in the proposed device are optimized for attaining wide bandwidth, small insertion loss (IL), low cross talk (CT), and compact size. Measurement results reveal that the footprint of the presented device is 11.92 μm × 11.92 μm. From 1520 to 1600 nm, the measured insertion loss and cross talk are smaller than 0.67 dB and -28.6 dB in the case of the TE0 mode, lower than 0.65 dB and -28.7 dB in the case of the TE1 mode, less than 0.48 dB and -36.3 dB in the case of the TM0 mode, and lower than 0.62 dB and -28 dB in the case of the TM1 mode.

Inverse-designed compact silicon waveguide reflector for on-chip resonators

Waveguide reflectors are crucial components in integrated optics and on-chip resonators, with their efficiency and dimensions significantly impacting system performance and integration. This paper presents an compact silicon on-chip waveguide reflector, designed using photonics inverse design, featuring a footprint of only 1.64μm×1.78μm and a simple, smooth structure. The simulation shows a 1 dB bandwidth over 400 nm and a reflectivity above 97.6% in the 1520–1570 nm wavelength range. Experimental measurements, conducted through Fabry-Pérot resonator spectrum analysis, confirm the excellent performance of the waveguide reflector, attaining a reflectivity over 92.8%. Additionally, the study presents two more waveguide reflectors tailored for the 1.31μm and 2μm wavelength, emphasizing the scalability of the design. The compact size and broadband reflectivity characteristics of the waveguide reflector provide increased flexibility in designing cavity lengths and directional couplers, making it a promising choice for applications in resonators and highly integrated photonics systems.

Indistinguishable photons from an artificial atom in silicon photonics

Silicon is the ideal material for building electronic and photonic circuits at scale. Integrated photonic quantum technologies in silicon offer a promising path to scaling by leveraging advanced semiconductor manufacturing and integration capabilities. However, the lack of deterministic quantum light sources and strong photon-photon interactions in silicon poses a challenge to scalability. In this work, we demonstrate an indistinguishable photon source in silicon photonics based on an artificial atom. We show that a G center in a silicon waveguide can generate high-purity telecom-band single photons. We perform high-resolution spectroscopy and time-delayed two-photon interference to demonstrate the indistinguishability of single photons emitted from a G center in a silicon waveguide. Our results show that artificial atoms in silicon photonics can source single photons suitable for photonic quantum networks and processors.

Silicon Waveguide-Integrated Platinum Telluride Midinfrared Photodetector with High Responsivity and High Speed.

The detection of mid-infrared light, covering a variety of molecular vibrational spectra, is critical for both civil and military purposes. Recent studies have highlighted the potential of two-dimensional topological semimetals for mid-infrared detection due to their advantages, including van der Waals (vdW) stacking and gapless electronic structures. Among them, mid-infrared photodetectors based on type-II Dirac semimetals have been less studied. In this paper, we present a silicon waveguide integrated type-II Dirac semimetal platinum telluride (PtTe2) mid-infrared photodetector, and further improve detection performance by using PtTe2-graphene heterostructure. For the fabricated silicon waveguide-integrated PtTe2 photodetector, with an external bias voltage of -10 mV and an input optical power of 86 nW, the measured responsivity is 2.7 A/W at 2004 nm and a 3 dB bandwidth of 0.6 MHz is realized. For the fabricated silicon waveguide-integrated PtTe2-graphene photodetector, as the external bias voltage and input optical power are 0.5 V and 0.13 μW, a responsivity of 5.5 A/W at 2004 nm and a 3 dB bandwidth of 35 MHz are obtained. An external quantum efficiency of 119% can be achieved at an input optical power of 0.376 μW.

Monolithically integrated mode converter from terahertz substrateless silicon guide to conductive slotline

Although substrateless micro-scale silicon waveguides are a useful and versatile platform for terahertz waves, the fact that modal fields occupy the volume of the core limits the potential to dynamically manipulate guided waves. To address this, we introduce an aperiodic lattice structure to enable the monolithic co-integration of a Vivaldi antenna-like mode converter with a substrateless silicon waveguide. This broadband transition is experimentally confirmed to exhibit ∼2.5 dB average loss for two couplers, from 220 GHz to 330 GHz, and enables a photoexcited variable attenuator as proof-of-concept demonstration. This is an important enabling step to incorporate general-purpose dynamic reconfigurability, sensing, and modulation functionality into terahertz-range silicon-based integrated circuits, which are currently limited to primarily all-passive structures.

Development of Photonic In-Sensor Computing Based on a Mid-Infrared Silicon Waveguide Platform.

Neuromorphic in-sensor computing has provided an energy-efficient solution to smart sensor design and on-chip data processing. In recent years, various free-space-configured optoelectronic chips have been demonstrated for on-chip neuromorphic vision processing. However, on-chip waveguide-based in-sensor computing with different data modalities is still lacking. Here, by integrating a responsivity-tunable graphene photodetector onto the silicon waveguide, an on-chip waveguide-based in-sensor processing unit is realized in the mid-infrared wavelength range. The weighting operation is achieved by dynamically tuning the bias of the photodetector, which could reach 4 bit weighting precision. Three different neural network tasks are performed to demonstrate the capabilities of our device. First, image preprocessing is performed for handwritten digits and fashion product classification as a general task. Next, resistive-type glove sensor signals are reversed and applied to the photodetector as an input for gesture recognition. Finally, spectroscopic data processing for binary gas mixture classification is demonstrated by utilizing the broadband performance of the device from 3.65 to 3.8 μm. By extending the wavelength from near-infrared to mid-infrared, our work shows the capability of a waveguide-integrated tunable graphene photodetector as a viable weighting solution for photonic in-sensor computing. Furthermore, such a solution could be used for large-scale neuromorphic in-sensor computing in photonic integrated circuits at the edge.

Nanophotonic Bragg grating assisted Mach–Zehnder interferometers for O-band add-drop filters

Spectral filters are fundamental building blocks in integrated photonics. Bragg grating filters have been demonstrated in silicon waveguides with a wide range of spectral responses and are suitable for wavelength division multiplexing applications. However, retrieving Bragg grating reflections typically requires external components such as fiber optic circulators. In this work, we develop fully integrated add-drop filters based on cladding-modulated Bragg gratings incorporated in a Mach–Zehnder interferometer configuration. We design complex spectral filtering devices with single and dual-band flat-top responses for the specified bandwidth. Additionally, we propose a novel design methodology which aims to minimize phase errors within the filters. We experimentally demonstrate add-drop filters with single-band and two-band rejection spectra at the datacom O-band, fabricated on a 220-nm thick silicon-on-insulator platform. Our results show an insertion loss below 1 dB and a crosstalk of around −20 dB at the channel center for a 4.5-nm wavelength grid and 3-nm wide channels.

Fast topological pumps via quantum metric engineering on photonic chips.

Topological pumps have garnered substantial attention in physics. However, the requirement for slow evolution speed to satisfy adiabaticity greatly restricts their application in on-chip devices. Here, we discover a direct link between adiabaticity and quantum metric, the real part of quantum geometry that has been relatively less explored compared to its imaginary counterpart, the Berry curvature. We demonstrate that the evolution speed of topological pumps between nontrivial edge states can be increased by reducing the quantum metric via introduction of long-range coupling to the celebrated Rice-Mele model. This fast topological pump can occur without affecting the bulk state evolution, which challenges the common understanding. We experimentally confirm our findings by using a platform consisting of bilayer integrated silicon waveguides operating at telecommunication wavelengths. Our work provides possibilities for lifting topological pumps from the constraints of slow evolution and paves the way toward compact photonic integration.

Design of high power evanescent quantum dot distributed feedback lasers on Si

Great advancements in III–V/Si epitaxy have pushed quantum dot lasers to the forefront of silicon photonics. In this work, we designed the structures of evanescent coupled quantum dot distributed feedback lasers with asymmetric gratings, which made significant improvement in on-chip output power while maintaining single-longitudinal-mode stability. The optimal λ/4 phase-shift position (the ratio of the grating length from the rear-end of λ/4 phase-shift to the total grating length) from conventional position of 0.50 to 0.64 allows the ratio of the output power at both sides of silicon waveguide to be increased from 1.0 to 5.9. Moreover, the optimal duty cycle at one side of the phase-shift from 0.50 to 0.8 allows the ratio to be increased from 1.0 to 3.7. Meanwhile, the ratio could be dramatically improved from 1.0 to 9.2 by changed the duty cycle at one side of phase-shift to 0.7 while maintaining the phase-shift position of 0.64. With those designed structures, evanescent coupled quantum dot lasers could challenge the state-of-the-art bonded quantum well lasers and may eventually become ubiquitous and affordable for future commercial production.

Ultra-compact and polarization-insensitive silicon waveguide 3 × 3 star-crossing based on composite subwavelength grating metamaterials.

We present what we believe is the first report on a polarization-insensitive 3 × 3 silicon star-crossing utilizing a composite subwavelength metamaterial waveguide structure. Two different types of subwavelength grating metamaterials (nanohole grating and fan-shaped bent subwavelength grating) are respectively used to address diffraction issues in the crossing region and mode interference issues caused by a compact non-adiabatic design. This approach results in a device with an ultra-compact footprint of 12.68 × 10.98 µm2 on a standard 220 nm silicon-on-insulator (SOI) platform. Simulation results show low insertion loss (IL) values of <0.2 dB/0.3 dB and suppressed cross talk (CT) levels of <-27.2 dB/-23.6 dB for TE/TM polarizations across a wavelength range of 100 nm (1500-1600 nm). Experimental measurements of the fabricated devices confirm outstanding performance, with IL values of <0.35 dB/0.4 dB and CT levels of <-31.5 dB/-28.6 dB for TE/TM polarization in the C-band.