Amorphous Silicon Research Articles

A Study on the Kinetics and Structural Changes of Silicon during Ball Milling

Enhancing our understanding of the ball milling process is important to optimize silicon amorphization, a key factor in improving the performance of lithium-ion battery anodes. To improve this understanding, we quantitatively studied the kinetics of silicon amorphization during ball milling using x-ray diffraction (XRD) and electrochemical methods, among other methods. The percentage of amorphous and crystalline silicon was deduced by fitting the XRD data and electrochemical results. The resulting trend versus ball milling time was then fitted using the Avrami model. The material resulting from ball milling was further studied using scanning and transmission electron microscopy (SEM/TEM). Under extended milling times, we found that a maximum of 86% of the silicon became amorphous. Similarly, the grain size of the crystalline silicon phase could not be reduced below 6 nm. Our observations suggest that amorphization results from defects creation during ball milling. Amorphization then stops when the grain size reaches a limit where defects are no longer formed. Figure 1

Influence of Cycling in Different State-of Charge Windows on Lifetime and Electrode Expansion of Microscale Silicon-Dominant Lithium-Ion Batteries

Silicon (Si) is a promising active anode material for next-generation lithium-ion batteries due to its high theoretical electrochemical capacity of 3579 mAh/gSi (Li15Si4) and low costs using microscale Si particles.1,2 However, the wide usage of Si as an active anode material is hindered due to its lower lifetime compared to graphite anodes. The degradation in silicon-containing batteries can be suppressed by partial lithiation strategies,2,3,4 with applications for automotive cells leading to improved lifetime.5 However, the lifetime problem still exists in partially lithiated microscale Si particles with lower volume expansion2,3 with ≈200 cycles for one-third silicon utilization, i.e., 1200 mAh/gSi 2. Moreover, we confirmed in our previous study6 as reported by Wetjen et al.4 and Haufe et al.2 that lower cell discharge cut-off voltages and thus higher silicon delithiation potentials versus Li+/Li led to accerlated aging and should be avoided.Thus, the motivation for this study is to avoid these high anode delithiation potentials by operating the cells in a high full cell state of charge (SoC) and to investigate the influence of different SoC windows on lifetime with laboratory 182.1 ± 0.7 mAh/gNCA Swagelok T-cells comprising a microscale silicon-dominant anode and a NCA cathode. The electrode-specific aging is monitored with the lithium metal reference electrode based on the anode and cathode potentials and pulse tests. To investigate the aging in different SOC regimes, three cycling conditions were chosen in the low (LV), middle (MV) and high voltage (HV) window and compared to cells cycled between 2.8 and 4.2 V as full voltage6. The voltage window of LV, MV and HV were chosen to represent cycling between 0-50%, 25-75%, and 50-100% SOC, respectively. Formation and checkups were the same for all cells with 2.80 V to 4.20 V. After reaching the end-of-life criterion of 55% state of health (SoH), the cells were disassembled and anode and cathodes were re-assembled in half-cells for a post-mortem analysis to reveal loss of lithium inventory (LLI) and loss of active material of the anode LAMAn, and the cathode LAMCat of the respective full-cells. Complementary to the electrochemical aging, dilatometer measurements7 were conducted to quantify the electrode expansion for the different silicon anode SoC windows since particle decoupling is expected to be one of the major aging mechanisms for microscale silicon2, which is expected for high electrode expansions.For the electrochemical results, the lifetime can be drastically increased from ≈230 to ≈560 equivalent full cycles (EFCs) for operating the full cell in the HV compared to the FV window, as shown in Fig. 1a. One EFCs is defined as the total charge throughput for charging and discharging one cycle normalized to the capacity of the initial checkup cycle. Over aging, the full cell degradation correlates very well with the end of discharge potential of the silicon anodes. Moreover, the electrode-specific pulse results show strong anode degradation while the cathode remains intact. The post-mortem results reveal LLI as most dominenat aging mode, which was very similar for all voltage windows. The HV cells showed both the highest LAMNE and LAMPE, whereas LAMNE was more dominant compared to LAMPE. The silicon amorphization was the lowest for the LV anodes and the highest for the HV anodes at the same SoH. The dilatometer results show that the silicon electrode expansion is the lowest for the low lithiation, i.e., LV, and the highest for the highest lithiation, i.e., HV. From the dilatometry results, we conclude that the mechanical electrode stability does not limit lifetime.Our results demonstrate that lifetime can be significantly improved by a factor of ≈2.4 based on the EFCs if operating cells with silicon dominant anodes in high SoCs and that low SoCs should be avoided. Acknowledgments: S. F. gratefully acknowledges the financial support from the BMBF (Federal Ministry of Education and Research, Germany) under the auspices of the ExZellTUM III project (grant number 03XP0255). The authors want to thank our student worker, Maximilian Reichl, for the fabrication of the NCA coatings. We also thank Wacker Chemie AG for kindly providing the microscale silicon material.

The Electronic Impact of X-Ray on Atomically-Thin Oxide Semiconductor Devices

In the past few years, there has been a significant emphasis on atomically-thin metal oxide semiconductors (OS), driven by their adjustable electrical properties that open up a range of electronic applications [1.2]. However, the mechanisms of transport and electronic tunability in OS remain unclear [3]. X-ray characterization techniques, i.e. X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD), are considered as non-destructive and are widely used to quantify the chemical and electronic state of OS. In this work, we discovered that X-ray has significant impact on the electronic properties of OS. We observed that low energy X-ray (<2 keV) induces a negative V T offset in OS devices [4]. The variation in V T primarily originates from the chemical interaction of oxygen molecules on the channel surface. OS devices absorb the low-energy X-ray, generating the holes, and they subsequently react with O2 - on the channel surface, resulting in the production of oxygen and its removal from the channel surface, as shown in Fig 1a. The V T shift caused by low energy X-ray will recover in air over time, as illustrated in Fig 1b. We incorporated the post low-energy X-ray devices into a vacuum environment with a pressure of 10-6 torr, and the V T of the device exhibited no recovery over time, providing additional support for oxygen absorption mechanism. Time-resolved electrical measurements conducted in different atmospheric conditions reveal that the variations in V T arise from the oxygen absorption mechanism. The research highlights the effect of X-ray on OS and analyzes the mechanism behind the increase in OS carrier concentration induced by the X-ray exposure.[1] Si, M. et al. Scaled indium oxide transistors fabricated using atomic layer deposition. Nat. Electron. 5, 164–170 (2022).[2] Charnas, Adam, et al. Extremely Thin Amorphous Indium Oxide Transistors. Adv. Mater. 2304044 (2023).[3] Conley, J. F. Instabilities in amorphous oxide semiconductor thin-film transistors. IEEE Trans. Device Mater. Rel. 10, 460–475 (2010).[4] Tseng, R., Wang, ST., Ahmed, T. et al. Wide-range and area-selective threshold voltage tunability in ultrathin indium oxide transistors. Nat. Commun. 14, 5243 (2023). Figure 1

Exciton-Assisted Relaxation of Hot Carriers in Semiconductor Quantum Dots

The work provides computational arguments in support of excitonic approach for the treatment of the photo-induced processes in semiconductor quantum dots. The non-radiative relaxation, non-radiative recombination, and photo-luminescence quantum yield are computed for a range of atomistic models of semiconductor quantum dots (QDs) in the quantum confinement regime. The excitonic (EX) approach is compared to independent orbital approximation (IOA) approach. Both approaches address dissipation of the electronic energy from electronic degrees of freedom to thermal vibrations of the lattice. The difference of two approaches appears in treatment of energies of electronic states and in a way how the electron-phonon interaction is taken into account. IOA approach uses energies of Kohn-Sham orbitals and on the fly non-adiabatic couplings. [1-3] EX approach uses Bethe-Salpeter equation (BSE) for energies.[4-6] The excitonic wavefunctions from BSE is used to construct a linear transformation matrix that transforms IOA-based non-adiabatic couplings into an excitonic basis. Both approaches are compared in application to untrasmall 1 nm diameter Si QD.Results include an evidence that hot excitons relax sooner in the excitonic picture than in the IOA picture. The observed effect is rationalized via smaller subgaps and different available relaxation pathways in the excitonic picture. The most surprising result is found for the simulated emission spectrum. The spectum in the excitonic picture demonstrates intensity in several 5 orders of magnitude higher than in the IOA picture. This observation is related to formation of a bright exciton in the lowest excitation of the ultra-small Si QDs. Obtained evidence favors excitonic approach and promises a reliable interpretation and prediction of time-dependent observables in a range of semiconductor quantum dots of different composition, sizes, and surface environment.[7] Most intriguing results are expected for QDs representing interface between PbSe and CdSe. [8]Support of National Science foundation via NSF CHE-2004197 is gratefully acknowledged.[1] D. S. Kilin and D. A. Micha, “Relaxation of photoexcited electrons at a nanostructured Si(111) surface”, J. Phys. Chem. Lett. 1, 1073-1077 (2010).[2] D. J. Vogel and D. S. Kilin, "First-Principles Treatment of Photoluminescence in Semiconductors" J. Phys. Chem. C 119, 50, 27954–27964 (2015).[3] D. J. Vogel, A. B. Kryjevski, T. M. Inerbaev, and D. S. Kilin, "Photoinduced Single- and Multiple-Electron Dynamics Processes Enhanced by Quantum Confinement in Lead Halide Perovskite Quantum Dots", J. Phys. Chem. Lett. 8, 13, 3032–3039(2017).[4] A. B. Kryjevski and Dmitri Kilin, "Enhanced multiple exciton generation in amorphous silicon nanowires and films", Molec. Phys. 114, 365-379 (2016).[5] M. Rohlfing and S. G. Louie, "Electron-Hole Excitations in Semiconductors and Insulators", Phys. Rev. Lett. 81, 2312-2315 (1998).[6] T. Sander, G. Kresse, "Macroscopic dielectric function within time-dependent density functional theory—Real time evolution versus the Casida approach", J. Chem. Phys. 146, 064110 (2017).[7] S. V. Kilina, P. K. Tamukong, and D. S. Kilin, "Surface Chemistry of Semiconducting Quantum Dots: Theoretical Perspectives", Acc. Chem. Res. 49, 10, 2127–2135 (2016).[8] H. B. Griffin, A. B. Kryjevski, and Dmitri S. Kilin, "Ab initio calculations of through-space and through-bond charge-transfer properties of interacting Janus-like PbSe and CdSe quantum dot heterostructures", Molec. Phys., e2273415 (2023).

Synchrotron Infrared Nano-Spectroscopy and Imaging of Lithium Fluoride in the Solid Electrolyte Interphase on Li-Ion Anodes

The solid electrolyte interphase layer that forms on the surface of the negative electrode in Li-ion batteries is crucial for battery cycle/calendar life, rate performance and safety. This 10's of nanometers layer is formed from the decomposition of the liquid electrolyte and its passivation properties are very sensitive to its formation and aging conditions. Despite this critical role, there is still a lack of fundamental understanding of how its structure and composition relate to its stability and passivation performance.Amongst the SEI products that form during the decomposition of liquid electrolyte, lithium fluoride (LiF) is a ubiquitous component and many attribute its presence to be a determining factor of a well passivated interface. Despite the importance, LiF’s nanostructure and distribution within the SEI layer is rarely investigated due to the lack of suitable characterization techniques. X-ray photoelectron spectroscopy (XPS) is the main tool to identify LiF in the SEI layer, but its micron scale lateral resolution precludes any nanometer scale mapping of LiF’s distribution which limits its ability to identify the role LiF plays in the SEI layer.Recently our group has been characterizing the SEI layer of Li-ion negative electrodes with nano-Fourier transform infrared spectroscopy (nano-FTIR).1,2 Nano-FTIR is a scanning probe technique based in a typical atomic force microscope (AFM) in which a broadband laser illuminates a metallic tip/sample interface. The metallic tip acts as an antenna, focusing the infrared light adjacent to the interface and creating a near-field interaction. By operating in constant tapping mode and due to the nonlinearity of the near-field signal on the tip/sample distance, the corresponding backscattered light from the near-field interaction with the sample can be separated from the background with lock-in amplification. The result is IR reflection and absorption spectra with lateral resolution close to the tip radius (ca. 20 nm). This far exceeds the diffraction limited resolution of typical IR microscopy (~10’s µm) creating new opportunities for IR characterization on nanometer length scales.In this talk, we’ll discuss our recent work related to utilizing synchrotron-based nano-FTIR to characterize and image LiF in the SEI layer of Li-ion based negative electrodes. The synchrotron infrared light source allows the detection of photons out to the far-IR (322 cm-1 limit) which enables the detection of the vibrational modes of Li containing inorganic phases such as LiF, Li2O, and LiH. By comparing model thin film LiF nano-FTIR spectra with experimental spectra take from the surfaces of Cu, Si thin film, and a novel metallic glass anode, we can gauge the heterogeneity of the LiF in the SEI layer and then suggest different LiF formation mechanisms. Based on the results, we believe that nano-FTIR with a synchrotron based light source will be a key tool to unravelling the nanoscale structure of the SEI layer due to its nanoscale chemical sensitivity and nondestructive nature.This research was supported by the US Department of Energy (DOE)’s Vehicle Technologies Office under the Silicon Consortium Project directed by Brian Cunningham and managed by Anthony Burrell. This research used resources of the Advanced Light Source from beamline 2.4, which is a DOE Office of Science User Facility under contract no. DE-AC02-05CH11231. References (1) Dopilka, A.; Gu, Y.; Larson, J. M.; Zorba, V.; Kostecki, R. Nano-FTIR Spectroscopy of the Solid Electrolyte Interphase Layer on a Thin-Film Silicon Li-Ion Anode. ACS Appl. Mater. Interfaces 2023, 15 (5), 6755–6767.(2) He, X.; Larson, J. M.; Bechtel, H. A.; Kostecki, R. In Situ Infrared Nanospectroscopy of the Local Processes at the Li/Polymer Electrolyte Interface. Nature Communications 2022, 13 (1), 1398.

Phase Field Damage Framework for Modeling Thin-Film Silicon Anodes in All-Solid-State Batteries

Recent advancements in solid electrolyte research have revived interest in the concept of silicon anodes for All-Solid-State Batteries (aSSBs). Tan et al. have recently proposed stable cyclic performance of micro-grain size pure silicon anodes paired with sulfide-based solid electrolytes [1]. This development has opened pathways toward potential aSSBs without encountering dendrite growth issues. This rediscovery of the thin-film a-silicon anodes concept has sparked computational interest in simulating the fracture-chemo-mechanical silicon lithiation mechanism. Understanding chemical reactions during lithiation and crack evolution during de-lithiation processes are intriguing topics. Especially, elastic-plastic deformation coupled with phase-field continuous fracture is crucial in comprehending the underlying physics and enhancing performance of battery cell through reverse engineering approaches.In this work, we develop a thermodynamically consistent deformation-diffusion-damage coupled framework to model the evolution of dense, thin-film-like a-silicon anodes during lithiation and delithiation. During delithiation, tensile stress develops inside the film as the lithiated film overcomes the initial stack pressure and compressive stress prevalent during lithiation. As tensile stress and strain evolve, randomly distributed weak spots lead to crack nucleation. This fracture occurs throughout the silicon film, forming sharp vertical cracks, and depending on surface conditions along the solid-state electrolyte, some interfacial cracks may emerge, leading to permanent contact loss and resulting in capacity reduction.From the model, we observed “mud crack” like phenomena, where crack distribution is not controlled by particle’s property, but entire cluster’s thickness matters. While flat model suggests that one that nucleate the crack was weak spots where they make stress concentration over entire body, whether they can evolve into big vertical crack mostly governed by connectivity of such weak spot maps. However, from our interface roughness model, what governs the crack evolution most was not the randomly distributed weak spot, but its geometric relative thickness difference between one another. Due to manufacturing process, perfect interface is hard to be achieved and such geometric irregularity always exist, thus, additive and binder studies along the silicon anode and its interface between sse would be key to achieve long and stable life span for a-silicon based aSSBs. Reference [1] Tan, Darren HS, et al. "Carbon-free high-loading silicon anodes enabled by sulfide solid electrolytes." Science 373.6562 (2021): 1494-1499.

Predicting buckling regimes during first lithiation of a crystalline silicon cylindrical anode particle: Influence of size and charging rate

A mathematical model for buckling analysis during the first lithiation of cylindrical crystalline silicon (c-Si) anode particles is presented using the finite deformation framework. A reaction–diffusion model that incorporates a reversible alloying–dealloying reaction (ADR) captures the lithiation in the expanding amorphous zone, while an addition reaction models the dynamics of the crystalline-amorphous silicon interface. A “movable” lithium part and an “immovable” lithium part make up the full lithium. In sharp contrast to the case of amorphous silicon (a-Si), the axial force evolution in c-Si is found to show two different peaks during the initial and final stages of lithiation, respectively. These peaks form the basis of two different buckling criteria, which, in turn, are shown to be sensitively influenced by the influx of lithium and a crucial size-dependent parameter. This framework gives an insight towards investigating the buckling phenomena for lithiation with an evolving amorphous silicon zone due to the interface movement, which is still absent in the present literature. Additionally, the present model enables us to obtain a quantitative and mechanistic insight into and capture the previous experimental observation that the mechanical stability of a cylindrical silicon particle may be improved by maintaining a crystalline silicon core inside the amorphous shell through controlled first lithiation. It is shown that such a crystalline-amorphous core–shell structure can be advantageous to more complicated designs involving carbon fiber as the core. It is thus hoped that this model will contribute towards improving the theoretical underpinnings of an improved design of mechanically robust electrodes for next-generation batteries.

Transparent Hole‐Selective Molybdenum Oxide Passivating Contact with Chlorine‐Based Interlayer Enabling 22.5% Efficient Silicon Solar Cells

The need to increase transparency in existing passivating contacts for crystalline silicon solar cells has motivated the development of transparent contacts based on transition metal oxides (TMOs). Among hole‐selective materials, molybdenum oxide (MoOx) has achieved the greatest success so far. However, despite providing low contact resistivity, MoOx relies on an intrinsic hydrogenated amorphous silicon (a‐Si:H(i)) interlayer to achieve high levels of surface passivation and thus high open‐circuit voltage at a device level, partially defeating the objective of improved transparency. Herein, we report unprecedented performance for a‐Si:H‐free MoOx‐based contacts by employing an alternative passivating interlayer based on a well‐engineered chlorine‐containing Al‐alloyed titanium oxide/titanium dioxide (AlyTiOx/TiO2 )stack. The resulting AlyTiOx/TiO2/MoOx stack achieved record levels of passivation, reaching J0 values as low as 16 fA cm−2, closer to values reported for a‐Si:H‐based contacts, while maintaining lower contact resistivity, well below 100 mΩ cm−2. Additionally, the stack presents improved transparency compared to a‐Si:H‐based contacts, with gains in short‐circuit current density of at least 0.8 mA cm−2. The work pushes the performance of hole‐selective passivating contacts based on TMOs to new levels, enabling a record efficiency of 22.53% for cells with fully transparent hole‐selective passivating contacts. This work serves as an important stepping stone toward low‐thermal‐budget, simple manufacturing of high‐efficiency solar cells.

Effect of temperature on the nanoindentation behavior of monocrystalline silicon by molecular dynamics simulations

Monocrystalline silicon (Si) undergoes complex phase transformations under external loads, significantly affecting its performance and processing. In this study, molecular dynamics (MD) simulations are performed from 1 to 900 K to explore temperature effects on the mechanical properties and deformation behavior of monocrystalline silicon during nanoindentation. Results indicate that hardness and elastic modulus decrease with rising temperature. At lower temperature, the activation of plastic deformation is delayed. The suddenly release of stored elastic energy manifests as a pop-in event. The indentation creates a quadruple symmetric phase transformation zone, primarily consisting of Si-II at the core, flanked by Si-XIII and bct-5. Increasing temperature advances the plastic deformation of the sample. High temperatures facilitate the formation and subsequent phase transformation of Si-XIII, reduce the stability of bct-5 during unloading, and promote the amorphization of silicon. At high temperatures, the dislocation of silicon nucleates at the subsurface, resulting in the formation of a substable phase. The anisotropy of deformation is evident from the atomic perspective, based on the orientation dependence of the phase transformation. This research provides new insights into the deformation behavior and phase transformations of monocrystalline silicon, supporting manufacturing and application of silicon products.

Strong third-order nonlinearity in amorphous silicon carbide waveguides.

Silicon carbide (SiC) photonic integrated platform has attracted significant research interest for on-chip optical applications, owing to its exceptional optical properties such as a broad transparency window, high refractive index, and strong nonlinearity. Among the various types of SiC, amorphous SiC (a-SiC) has particularly emerged as an accessible choice for forming thin-film SiC-on-insulator (SiCOI) stacks, demonstrating promising capabilities for wafer-scale photonic applications. In this work, we prepare three a-SiCOI samples using the plasma-enhanced chemical vapor deposition, with different refractive indices. We fabricate optical waveguides, conduct four-wave mixing measurements, and characterize the nonlinear refractive index in these samples. Our findings reveal that an increase in the refractive index of a-SiC leads to a corresponding increase in the nonlinear refractive index, which is comparable to that of silicon. Hence, a-SiC offers an approach to develop a SiC platform with a wider bandgap than that of silicon, minimizing two-photon absorption while also providing a higher refractive index and stronger nonlinearity compared to crystalline SiC.

Towards a CMOS compatible refractive index sensor: cointegration of TiN nanohole arrays and Ge photodetectors in a 200 mm wafer silicon technology.

In this work, we present the monolithic integration of a TiN nanohole array and a Ge photodetector towards a CMOS compatible fabrication of a refractive index sensor in a 200 mm wafer silicon technology. We developed a technology process that enables fabrication with high yields of around 90%. Ge photodetectors with a Ge layer thickness of 450 nm and an area of 1600 µm2 (40 µm x 40 µm) show dark current densities of around 129 mA/cm2 and responsivities of 0.114 A/W measured by top illumination (TE polarization; λ = 1310 nm; angle of incidence = 14 °) at a reverse bias of 1 V. Nanohole arrays were structured in a 150 nm thick TiN layer. They were integrated into the back end of line and placed spatially close to the Ge photodetectors. After the metallization, passivation, and pad opening, the nanohole arrays were released with the help of an amorphous silicon stop layer. A significant impact of the TiN nanohole arrays on the optical behavior of the photodetector could be proven on the wafer level. Photocurrent measurements by top illumination confirm a strong dependence of optical properties on the polarization of the incident light and the nanohole array design. We demonstrate very stable photocurrents on the wafer level with a standard deviation of σ < 6%.

Polycrystalline silicon, a molecular dynamics study: I. Deposition and growth modes

Polycrystalline silicon (poly-Si) significantly expands the properties of the ICT miracle material, silicon (Si). Depending on the grain size and shape and grain boundary structure, the properties of poly-Si exceed what single-crystal (c-Si) and amorphous (a-Si) silicon can offer, especially for radio frequency (RF) applications in microelectronics. Due to its wide range of applications and, on the one hand, its theoretically and technologically challenging microstructure, poly-Si research is the most timely (Ding et al 2020 Mater. Charact. 161 110174; Zhao and Li 2019 Acta Mater. 168 52–62). In this report, we describe how we simulate and analyse the phenomena and mechanisms that control the effect of poly-Si deposition parameters on the structure of the deposited poly-Si films using classical molecular dynamics simulations. The grain shape and size, degree of crystallinity, grain boundary structure and the stress of poly-Si films are determined depending on the growth temperature, temperature distribution in the growing film, deposition flux, flux variation and the energy transferred to the film surface due to the deposition flux. The main results include: (i) the dependence of the crystallinity profile of the deposited poly-Si films on the stress, temperature and the different parameters of the deposition flux, (ii) growth modes at the early stages of the deposition, (iii) interaction and stability of seed crystallites at the early stage of the deposition of poly-Si films and the transition from the isolated crystallite growth to the poly-Si growth, (iv) interplay of the temperature, crystallinity, crystal shape and heath conductivity of different Si phases, (v) four different stages of crystallite growth are described: nucleation, growth, disappearance and retardation.

Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors

Objective. Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silicon detectors for MRT dosimetry, presenting a novel combination of flexible, ultra-thin and radiation-hard features. Approach. Two detectors are explored: an n-type/intrinsic/p-type planar diode (NIP) and an NIP with an additional charge selective layer (NIP + CSC). Results. The sensitivity of the NIP + CSC detector was greater than the NIP detector for all measurement conditions. At 1 V and 0 kGy under the 3T Cu–Cu synchrotron broadbeam, the NIP + CSC detector sensitivity of (7.76 ± 0.01) pC cGy−1 outperformed the NIP detector sensitivity of (3.55 ± 0.23) pC cGy−1 by 219%. The energy dependence of both detectors matches closely to the attenuation coefficient ratio of silicon against water. Radiation damage measurements of both detectors out to 40 kGy revealed a higher radiation tolerance in the NIP detector compared to the NIP + CSC (17.2% and 33.5% degradations, respectively). Percentage depth dose profiles matched the PTW microDiamond detector’s performance to within ±6% for all beam filtrations except in 3T Al–Al due to energy dependence. The 3T Cu–Cu microbeam field profile was reconstructed and returned microbeam width and peak-to-peak values of (51 ± 1) μm and (405 ± 5) μm, respectively. The peak-to-valley dose ratio was measured as a function of depth and agrees within error to the values obtained with the PTW microDiamond. X-ray beam induced charge mapping of the detector revealed minimal dose perturbations from extra-cameral materials. Significance. The detectors are comparable to commercially available dosimeters for quality assurance in MRT. With added benefits of being micron-sized and possessing a flexible water-equivalent substrate, these detectors are attractive candidates for quality assurance, in-vivo dosimetry and in-line beam monitoring for MRT and FLASH therapy.

Optimizing phosphorus-doped polysilicon in TOPCon structures using silicon oxide layers to improve silicon solar cell performance

Tunnel Oxide Passivated Contact (TOPCon) technology is one of the most influential and industrially viable solar cell technologies available today. Improving the quality of passivation contact has become a central focus of current research. Although the conventional monolayer polycrystalline silicon method is highly effective in TOPCon solar cells, it is limited by doping inhomogeneity, which impairs the passivation and electrical properties, and the cell's photovoltaic conversion efficiency remains suboptimal. To address this issue, this study investigates the deposition of two layers of silicon oxide and two layers of in-situ doped phosphorus amorphous silicon, termed double poly-Si/SiOx structures, on n-type silicon wafers using plasma-enhanced chemical vapor deposition (PECVD). The effectiveness of the structure was confirmed through various characterization techniques such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). Key findings indicate that the double-polysilicon structure significantly enhances the uniformity of phosphorus doping, improving the carrier lifetime of the cell and reducing the contact resistance. As a result, the average efficiency in the final production stage has a conversion efficiency gain of 0.23 % over the baseline group. This study underscores the potential of this PECVD methodology to advance the fabrication of high-efficiency solar cells by providing significant improvements in passivation, doping uniformity, and overall cell performance.

Unlocking Neuromorphic Vision: Advancements in IGZO-Based Optoelectronic Memristors with Visible Range Sensitivity.

Optoelectronic memristors based on amorphous oxide semiconductors (AOSs) are promising devices for the development of spiking neural network (SNN) hardware in neuromorphic vision sensors. In such devices, the conductance state can be controlled by both optical and electrical stimuli, while the typical persistent photoconductivity (PPC) of AOS materials can be used to emulate synaptic functions. However, due to the large band gap of these materials, sensitivity to visible light (red/green/blue) is difficult to accomplish, which hinders applications requiring color discrimination. In this work, we report a 4 μm2 hydrogen-doped (H-doped) indium-gallium-zinc oxide (IGZO) optoelectronic memristor that emulates all of the important rules of SNNs such as short- to long-term memory transition (STM-LTM), paired-pulse facilitation (PPF), spike-time-dependent plasticity (STDP), and learning and forgetting capabilities. By the incorporation of hydrogen gas in the sputtering deposition of IGZO, visible sensitivity was achieved for green and blue wavelengths. Additionally, extremely high light/dark ratios of 179, 93, and 12 are demonstrated for wavelengths of 365, 405, and 505 nm, respectively, due to hydrogen-induced subgap states and device miniaturization. Therefore, the proposed device shows remarkable potential for integration with the pixel circuits of IGZO-based displays with extreme resolution for a true intelligent self-processing display.

Structural dynamics of a model of amorphous silicon

We perform extensive simulations and systematic statistical analyses on the structural dynamics of a model of amorphous silicon. The simulations follow the dynamics introduced by Wooten, Winer and Weaire: the energy is obtained with the Keating potential, and the dynamics consists of bond transpositions proposed at random locations and accepted with the Metropolis acceptance ratio. The structural quantities we track are the variations in time of the lateral lengths (Lx, Ly, Lz) of the cuboid simulation cell. We transform these quantities into the volume V and two aspect ratios B1 and B2. Our analysis reveals that at short times, the mean squared displacement (MSD) for all of them exhibits normal diffusion. At longer times, they cross over to anomalous diffusion (AD), with a temperature-dependent anomalous exponent α<1. We analyze our findings in the light of two standard models in statistical physics that feature anomalous dynamics, viz., continuous time random walker (CTRW) and fractional Brownian motion (fBm). We obtain the distribution of waiting times, and find that the data are consistent with a stretched-exponential decay. We also show that the three quantities, V, B1 and B2 exhibit negative velocity autocorrelation functions. These observations together suggest that the dynamics of the material belong to the fBm class.

Magnetron Sputter Deposition of Amorphous Silicon–SiO2 Quantized Nanolaminates

Quantization effects in nanolaminate structures of oxide materials are proposed and experimentally demonstrated only recently. Herein, the material combination of amorphous silicon and SiO2 deposited by magnetron sputtering is investigated and it is shown that the quantization effect can be observed indeed. Transmission electron microscopy characterization gives evidence of continuous layers of amorphous silicon and SiO2 with well‐defined interfaces. The deposition process is described and the tunability of the refractive index and the bandgap energy is demonstrated. By doing so, the advantages of this novel material over classical optical materials are shown and feasibility is proved. As an example, a longpass optical interference filter with edge at 720 nm is deposited using quantized nanolaminates as the high and SiO2 as the low refractive index material. This filter can be deposited successfully with close match to the design. It shows a blocking range throughout the visible spectrum whereas a comparable filter based on SiO2–TiO2 only blocks 500–700 nm.

Strain mapping in amorphous germanium thin films with scanning reflectance anisotropy microscopy

Strain imaging is a critical aspect in the design and characterization of opto-electronics, microelectronics, flexible electronics, and on-chip photonics. However, strain mapping techniques are often material specific and strain measurements in amorphous materials remain a challenge. Here, we demonstrate strain mapping and optical characterization of an amorphous semiconductor using scanning reflectance anisotropy microscopy. Using reflection anisotropy spectroscopy and finite element simulations on evaporated amorphous germanium films, we showcase the strain sensitivity of the ellipsometric parameters. We demonstrate nondestructive mapping for simple and complex strain states in amorphous systems. The sub-degree phase and amplitude sensitivity of the microscope is able to determine strain states on the order of 10−3.

Preparation of amorphous Bi-Fe-O series semiconductor and its crystallization behavior and photocatalytic activity

In that research field of Bi-Fe-O series compounds, the design and development of amorphous Bi-Fe-O semiconductor with high photocatalytic activity and pure phase BiFeO3 with multiferroic properties are two major challenges. Herein, the amorphous Bi-Fe-O series semiconductor is prepared by mechanical alloying method using Fe2O3 and Bi2O3 as the raw materials, and the pure phase nano-BiFeO3 crystalline is subsequently obtained by heat treatment process. Meanwhile the microstructure, band gap structure and photocatalytic or electromagnetic activity of amorphous and crystallized Bi-Fe-O semiconductor are also investigated. The results show that after 25 h of mechanical alloying, the crystalline structure of Bi2O3 and Fe2O3 is destroyed, and the system is transformed into amorphous phase. Moreover, photocatalytic hydrogen production experiment shows that amorphous Bi-Fe-O semiconductor has the highest photocatalytic hydrogen production rate which is 4.03 μmol/g/h, due to more defects and impurity energy levels. In addition, pure phase nano-BiFeO3 crystalline can be obtained when the heat treatment temperature of amorphous Bi-Fe-O semiconductor is 600°C, which have the best ferroelectric properties. This work not only provides new ideas for the research and development of amorphous semiconductor, but also proposes a green method to prepare pure phase nano-BiFeO3 crystalline.

The amorphization of crystalline silicon by ball milling

The transformation of crystalline silicon to amorphous silicon during ball milling was quantitatively measured by x-ray diffraction and electrochemical methods. Amorphous silicon was found to form rapidly from the very initial stages of ball milling. Simultaneously, the grain size of the crystalline silicon phase decreased. Under extended milling times it was found that a maximum of 86 % of the silicon became amorphous. Similarly, the grain size of the crystalline silicon phase could not be reduced below 6 nm. This transformation followed an Avrami kinetic model, which is consistent with a system which reaches a steady state. These observations suggest a mechanism in which ball milling generates defects, resulting in silicon amorphization and grain size reduction, where the degree of amorphization is limited in extent because there exists a limiting silicon grain size below which defects are no longer formed.