Silicon Oxycarbide Research Articles

Structure and Thermodynamics of Silicon Oxycarbide Polymer-Derived Ceramics with and without Mixed-Bonding.

Silicon oxycarbides synthesized through a conventional polymeric route show characteristic nanodomains that consist of sp2 hybridized carbon, tetrahedrally coordinated SiO4, and tetrahedrally coordinated silicon with carbon substitution for oxygen, called “mixed bonds.” Here we synthesize two preceramic polymers possessing both phenyl substituents as unique organic groups. In one precursor, the phenyl group is directly bonded to silicon, resulting in a SiOC polymer-derived ceramic (PDC) with mixed bonding. In the other precursor, the phenyl group is bonded to the silicon through Si-O-C bridges, which results in a SiOC PDC without mixed bonding. Radial breathing-like mode bands in the Raman spectra reveal that SiOC PDCs contain carbon nanoscrolls with spiral-like rolled-up geometry and open edges at the ends of their structure. Calorimetric measurements of the heat of dissolution in a molten salt solvent show that the SiOC PDCs with mixed bonding have negative enthalpies of formation with respect to crystalline components (silicon carbide, cristobalite, and graphite) and are more thermodynamically stable than those without. The heats of formation from crystalline SiO2, SiC, and C of SiOC PDCs without mixed bonding are close to zero and depend on the pyrolysis temperature. Solid state MAS NMR confirms the presence or absence of mixed bonding and further shows that, without mixed bonding, terminal hydroxyls are bound to some of the Si-O tetrahedra. This study indicates that mixed bonding, along with additional factors, such as the presence of terminal hydroxyl groups, contributes to the thermodynamic stability of SiOC PDCs.

Beyond surface nanoindentation: Combining static and dynamic nanoindentation to assess intrinsic mechanical properties of chemical vapor deposition amorphous silicon oxide (SiOx) and silicon oxycarbide (SiOxCy) thin films

Nanoindentation is a well-known technique to assess the mechanical properties of bulk materials and films. Despite that, nanoindentation of thin films is not straightforward, given that the measured properties are composite information from a film/substrate system and depend on the indentation depth. By using dynamic indentation experiments and analytical or empirical models, we assessed the intrinsic film properties of chemical vapor deposited silicon oxide (SiOx) and silicon oxycarbide (SiOxCy) thin films with thicknesses ranging from 60 to 700 nm. In this work, the Bec rheological model and several mixing laws were reviewed. Measured Young modulus appeared to be affected by the substrate properties more than hardness: for the thinnest films, moduli were measured at ca. 90 GPa whereas intrinsic moduli were calculated at ca. 50 GPa. Using calculated intrinsic film modulus and hardness, it was possible to establish correlations between these properties, the chemical composition and the structural organization of the films.

Digital light processing of Si-based composite ceramics and bulk silica ceramics from a high solid loading polysiloxane/SiO2 slurry

Nowadays, 3D polymer-derived silicon oxycarbide ceramics (SiOC) can be fabricated by the stereolithography method successfully. However, due to their intrinsically poor ceramic content and the large thermal shrinkage during the pyrolysis, it is difficult for the bulk 3D polysiloxane precursors to be pyrolyzed into dense 3D-ceramics. Herein, the ceramic content of the photocurable polysiloxane precursors was increased by adding a large amount of SiO2 powders into the low solid content epoxy-acrylic siloxane. After being added with proper dispersant, the viscosity of the high solid loading polysiloxane/SiO2 slurry can reach a proper level. Bulk 3D-silica ceramics with the wall-thickness around 8 mm can be conveniently fabricated from the polysiloxane/SiO2 slurry by stereolithography and a two-step sintering process. The addition of a proper sintering aid NaF can promote the 3D-PSO/SiO2 precursor to be converted into dense and crack-free 3D-silica ceramics with good mechanical proprieties.

Activation of percolation network in structural-strengthened polymer-derived ceramic for minor deformation detection

Monitoring of minor deformation in precision instruments is of great significance to guarantee the reliable operation. Polymer derived ceramic sensors with superior piezoresistive performance are promising. The traditional forming methods of the PDC sensor may cause the decline in mechanical properties. Thus, a silicon oxycarbide (SiOC) ceramic pressure sensor with diamond minimal surface structure were designed to improve the dimensional stability and ensure the uniform distribution of the stress. The percolation network comprising of electrically conductive free carbon was formed in the SiOC by the post heat treatment, which provided the structure superior piezoresistive property. The customized percolation network provided tunable sensing behavior and the resulting sensor had excellent accuracy and repeatability, possessing high sensitivity with the gauge factor of 297. More importantly, the sensor exhibited the high sensitivity with the small strains lower than 1.5%, indicating a reliable detection ability to the easily overlooked deformation. Additionally, the sensor had a high conductivity of 1.05 S/m and outstanding mechanical properties with the compressive strength and energy absorption of 15.11 MPa and 71.39 kJ•m−3. The printed sensor surmounts the limitations of current sensing materials, providing a promising way for the fabrication of high-performance and customized polymer derived ceramic pressure sensor.

Compressive thermal stress and microstructure-driven charge carrier transport in silicon oxycarbide thin films

This work correlates the charge carrier transport mechanism of silicon oxycarbide-based thin films with their morphology and thermal stress. Segregation of highly-graphitized carbon-rich, oxygen-depleted C/SiC areas homogeneously dispersed within an oxygen-rich C/SiOC matrix was seen on the 500 nm-SiOC thin films. Compressive biaxial stress induced by the mismatch with the Si-substrate thermal expansion coefficient was calculated at 109 MPa. Through Hall measurements, p-type carriers were shown dominating the SiOC film similar to monolithic samples. Thin films and monoliths have comparable carrier concentrations while the carrier mobility in SiOC thin films was 2 magnitudes higher than that of monolithic samples and is considered a consequence of the compressive thermal stress acting on the film. Improved conductivity of 16 S cm -1 is measured for the SiOC thin film sample which is assumed considering the enhanced carrier mobility alongside the reduced percolation threshold ascribed to the phase-separated morphology of the thin film.

3D Periodic and Interpenetrating Tungsten-Silicon Oxycarbide Nanocomposites Designed for Mechanical Robustness.

Metal-ceramic nanocomposites exhibit exceptional mechanical properties with a combination of high strength, toughness, and hardness that are not achievable in monolithic metals or ceramics, which make them valuable for applications in fields such as the aerospace and automotive industries. In this study, interpenetrating nanocomposites of three-dimensionally ordered macroporous (3DOM) tungsten-silicon oxycarbide (W-SiOC) were prepared, and their mechanical properties were investigated. In these nanocomposites, the crystalline tungsten and amorphous silicon oxycarbide phases both form continuous and interpenetrating networks, with some discrete free carbon nanodomains. The W-SiOC material inherits the periodic structure from its 3DOM W matrix, and this periodic structure can be maintained up to 1000 °C. In situ SEM micropillar compression tests demonstrated that the 3DOM W-SiOC material could sustain a maximum average stress of 1.1 GPa, a factor of 22 greater than that of the 3DOM W matrix, resulting in a specific strength of 640 MPa/(Mg/m3) at 30 °C. Deformation behavior of the developed 3DOM nanocomposite in a wide temperature range (30-575 °C) was investigated. The deformation mode of 3DOM W-SiOC exhibited a transition from fracture-dominated deformation at low temperatures to plastic deformation above 425 °C.

Macromonomers as a Novel Way to Investigate and Tailor Silicon-Oxycarbide-Based Materials Obtained from Polymeric Preceramic Precursors.

It has been shown that bifunctional monomers (D units), which are used to increase the carbon content in silicon oxycarbide precursors, can form volatile oligomers, thus affecting the amount of carbon available during the transition into the final material in the annealing process. Additionally, an uneven distribution of carbon-rich mers may lead to the formation of a free-carbon phase, instead of the incorporation of carbon atoms into the silicon matrix. In this study, a novel two-step approach was utilized. Firstly, a macromonomer containing a number of structural units with precise structure was synthesized, which was later polycondensed into a ceramic precursor. Chlorodimethylsilane modified 2,4,6,8-tetramethylcyclotetrasiloxane was used as a silicon oxycarbide precursor monomer containing both T and D structural units (i.e., silicon atoms bonded to three and two oxygen atoms, respectively), with well-defined interconnections between structural units. Such a macromonomer prevents the formation of small siloxane rings, and has a very limited number of possible combinations of structural units neighboring each silicon atom. This, after investigation using IR, XRD, TG and elemental analysis, gave insight into the effect of “anchoring” silicon atoms bonded to two methyl groups, as well as the impact of their distribution in comparison to the materials obtained using simple monomers containing a single silicon atom (structural unit).

Understanding lithium, sodium, and potassium storage mechanisms in silicon oxycarbide

The use of silicon oxycarbides (SiOCs) as anode materials in lithium-ion batteries and sodium-ion batteries has risen considerably in recent years. However, the amorphous and complex structures of SiOCs that contains C-rich and O-rich SiOC phases make it difficult to clarify Li+- and Na+-ion storage mechanisms experimentally. This study uncovers the Li+-, Na+-, and K+-ion storage mechanisms in both the O-rich SiO1.5C0.5 and C-rich SiO0.5C1.5 structures using the density functional theory. The ions inserted at the initial discharge process fill the microvoids in the SiOCs. A further ion insertion causes Si–O and Si–C bond cleavage, and thus results in the formation of a large-size free volume, which is favorable for subsequent ion insertion. The reasons for the high Li+-ion storage capacity as compared to Na+-ion are less severe volume expansion, more favorable formation of Li-rich Si compounds and Li–Si alloys. The theoretical K+-ion storage capacities in the O-rich SiO1.5C0.5 and C-rich SiO0.5C1.5 phases are much lower (335 and 186 mAh g−1, respectively) than those of Li+-ion (519 and 681 mAh g−1, respectively) and Na+-ion storages (335 and 681 mAh g−1, respectively). The huge structural instability caused by the repulsive interaction between the K+ ions results in the low storage capacity.

Insights into the Microstructural Evolution Occurring during Pyrolysis of Metal-Modified Ceramers Studied through Selective SiO2 Removal.

Silicon oxycarbide ceramers containing 5% aluminum, zirconium, and cobalt with respect to the total Si amount are prepared from a commercial polysiloxane and molecular precursors and pyrolyzed at temperatures ranging from 500 to 1000 °C. HF etching is carried out to partially digest the silica phase, thus revealing structural characteristics of the materials, which depend upon the incorporated heteroatom. From the structural and textural characterization, it was deduced that when Al enters into the ceramer structure, the crosslinking degree is increased, leading to lower carbon domain size and carbon incorporation as well. On the contrary, the substitution by Zr induced a phase-separated SiO2-ZrO2 network with some degree of mesoporosity even at high pyrolysis temperatures. Co, however, forms small carbidic crystallites, which strongly modifies the carbonaceous phase in such a way that even when it is added in a small amount and in combination with other heteroatoms, this transient metal dominates the structural characteristics of the ceramer material. This systematic study of the ceramer compounds allows the identification of the ultimate properties of the polymer-derived ceramic composites.

Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers

AbstractThis work focuses on silicon oxycarbide thin film preparation and characterization. The Taguchi method of experimental design was used to optimize the process of film deposition. The prepared ceramic thin films with a thickness of c. 500 nm were characterized concerning their morphology, composition, and electrical properties. The molecular structure of the preceramic polymers used for the preparation of the ceramic thin films as well as the thermomechanical properties of the resulting SiOC significantly influenced the quality of the ceramic films. Thus, an increase in the content of carbon was found beneficial for the preparation of crack‐free thin films. The obtained ceramic films exhibited increased electrical conductivity as compared to monolithic SiOC of similar chemical composition. This was shown to correlate with the unique hierarchical microstructure of the SiOC films, which contain large oxygen‐depleted particles, mainly consisting of highly graphitized carbon and SiC, homogeneously dispersed in an oxygen‐containing amorphous matrix. The matrix was shown to also contain free carbon and to contribute to charge carrier transport between the highly conductive large particles. The ceramic thin films possess electrical conductivities in the range from 5.4 to 8.8 S/cm and may be suitable for implementation in miniaturized piezoresistive strain gauges.

Effect of Sputtering Parameters on the Optical Properties of Luminescent Eu-Doped SiOx Thin Films

Luminescent silicon (Si) based structures that are compatible with the existing complementary metal oxide semiconductor industry has drawn significant interest with the vision of developing an integrated optoelectronic platform on monolithic Si [1]. Such luminescent structures find several applications in inter- and intra-chip optical interconnects, microdisplay, biological detections, and solid-state lighting [2, 3]. The outstanding optical properties and chemical stability of rare earth materials make doping Si with rare earths a promising approach to obtain bright emission from Si-based structures [4].In this work, we have investigated the influence of sputtering power and argon (Ar) partial pressure on the optical properties and the composition of europium (Eu) doped silicon oxide (SiOx) thin films. For this purpose, the thin films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) with in-situ magnetron sputtering on a p-type 3" Si (100) substrate. Silane (SiH4) and oxygen (O2) were used as precursor gases, and a solid 99.9% pure Eu as the sputtering target. Ar was used as the sputtering gas and brought into the chamber through a gas injection ring. A set of samples was prepared by changing the Ar flow rate ranging from 10 to 40 cubic centimeters per minute at standard temperature and pressure (sccm) in steps of 10 sccm. Another set of samples was fabricated by varying the sputtering power from 20 to 30W in steps of 5W. Post-deposition annealing was performed at a higher temperature from 900°C to 1200°C in ambient nitrogen and a mixture of nitrogen (95%) and hydrogen (5%) atmosphere. The effect of hydrogen passivation has also been studied in this work. The compositional analysis was performed by Rutherford backscattering spectrometry (RBS) and elastic recoil detection analysis (ERDA). We found that the doping concentration was strongly influenced by the sputtering power, and it is slightly affected by the Ar partial pressure. The thickness, refractive index, and absorption coefficient of the thin films were obtained from variable angle spectroscopic ellipsometry (VASE) analysis. The dependency of the thickness and the optical parameters on sputtering power and Ar partial pressure was also analyzed. In addition, the luminescence properties of Eu doped SiOx films have been investigated. A bright white emission was observed due to the transition between 4f65d and 4f7energy levels of Eu2+ ion from all the films, which can be seen by the naked eye under daylight conditions. The relation between intensity and doping concentration was also discussed.[1] Lin, R. Huang, H. Wang, Y. Wang, Y. Zhang, Y. Guo, ... and H. Li, “Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films,” J. Alloys Compd., vol. 694, pp. 946–951, 2017, doi: 10.1016/j.jallcom.2016.10.132.[2] D. Thomson, A. Zilkie, J. E. Bowers, T. Komljenovic, G. T. Reed, L. Vivien, ... and J. M. Hartmann, , “Roadmap on silicon photonics,” J. Opt. (United Kingdom), vol. 18, no. 7, pp. 1–20, 2016, doi: 10.1088/2040-8978/18/7/073003.[3] H. Jeong, S. Lee, G. Y. Sung, and J. H. Shin, “Design and fabrication of Tb3+-doped silicon oxy-nitride microdisk for biosensor applications,” IEEE Photonics Technol. Lett., vol. 23, no. 2, pp. 88–90, 2011, doi: 10.1109/LPT.2010.2091268.[4] L. Li, J. Zheng, Y. Zuo, B. Cheng, and Q. Wang, “Strong Eu2+ light emission in Eu silicate through Eu3+ reduction in Eu2O3/Si multilayer deposited on Si substrates,” Nanoscale Res. Lett., vol. 8, no. 1, p. 194, 2013, doi: 10.1186/1556-276x-8-194.

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC.

Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crystal 4H-SiC surfaces effectively. In the PEP-MP process, the single-crystal 4H-SiC surface is modified into a soft oxide layer, which is mainly made of SiO2 and a small amount of silicon oxycarbide by plasma electrolytic processing. Then, the modified oxide layer is easily removed by soft abrasives such as CeO2, whose hardness is much lower than that of single-crystal 4H-SiC. Finally a scratch-free and damage-free surface can be obtained. The hardness of the single-crystal 4H-SiC surface is greatly decreased from 2891.03 to 72.61 HV after plasma electrolytic processing. By scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (XPS) observation, the plasma electrolytic processing behaviors of single-crystal 4H-SiC are investigated. The scanning white light interferometer (SWLI) images of 4H-SiC surface processed by PEP-MP for 30 s shows that an ultra-smooth surface is obtained and the surface roughness decreased from Sz 607 nm, Ra 64.5 nm to Sz 60.1 nm, Ra 8.1 nm and the material removal rate (MRR) of PEP-MP is about 21.8 μm/h.

Porosity and nanostructure of silicon oxycarbide derived carbon

The unique nanostructure of polymer derived pseudo-amorphous silicon oxycarbide ceramics, which comprises of SiO2 nanodomains, turbostratic graphite, and mixed bond tetrahedral of Si-O/C, enables processing of nanostructured materials with enhanced specific surface area and nanoporosity. Selective etching of the SiO2 nanodomains in a polysilsesquioxane derived SiOC structure left behind highly porous carbonaceous materials with specific surface area in excess of 800 m2g-1, where the obtained porosity and their distribution are remnant of the SiO2 nanodomains. High resolution transmission electron microscopy clearly identified the nanopores and graphene type layers in the oxycarbide derived carbons. The carbon in the SiOC ceramics was found to be better ordered after HF leaching process. Volume fraction of the micropores in the derived carbon was found to increase with the pyrolysis temperature of the parent silicon oxycarbide.

Innovative procedure for 3D printing of hybrid silicon carbide/carbon fiber nanocomposites

AbstractA novel route to fabricating hybrid ceramic matrix composites has been developed. The fabrication is based on the unique combination of additive manufacturing (AM), a preceramic polymer, and a chopped carbon fiber precursor. After introducing the photoinitiator to the preceramic polymer formulation, a photosensitive resin was introduced. The resulting resin was loaded with distinct weight percentages of stabilized polyacrylonitrile nanofiber—the carbon fiber precursor. These formulations were 3D printed, cured, and converted to ceramic phases using a pyrolysis cycle. The end objective of the pyrolysis cycle is the conversion of the polycarbosilane resin into a silicon carbide matrix and the transformation of the PAN polymer into reinforcing carbon nanofibers within one cycle. The results of this work showed that ceramic matrix composite components can be successfully fabricated using a suitable combination of 3D printing, resin formulation, and processing cycle. The pyrolyzed ceramic hybrid composite was fully dense with nearly linear shrinkage and a shiny, smooth surface. Approximately 60% retained weight after pyrolysis to 1350°C was confirmed by thermogravimetric analysis. In terms of crystallography, the ceramic matrix composite displayed three coexisting phases including silicon carbide, silicon oxycarbide, and turbostratic carbon. The results showed this combination of material and processes has a high potential for fabricating hybrid composites with high‐temperature performance and improved mechanical properties combined with complex geometries.

High-temperature evolution behavior of MK silicon resin derived SiOC ceramics under different environments

Silicon oxycarbide (SiOC) ceramics has been prepared by polymethylsilsesquioxane (MK silicon resin) under inert environment at 1000 °C in the present work. The evolution behavior of compositions and structures of MK silicon resin derived SiOC ceramics at high temperatures in different environments were studied systematically. It was found that in inert environment, the rearrangement of Si–C and Si–O bonds took place at 1200 °C–1500 °C and the carobothermal reductions of SiOC ceramics were activated at 1500 °C. While in reduced pressure environment, lower pressure reduced the activation temperature of carbothermal reductions to 1400 °C. In air environment, partial Si[(O,C)4] network oxidation and free carbon oxidation occurred at high temperatures, which would generate a large amount of SiO2 and played a protective role in the interior of SiOC ceramics.

Phase content prediction in polymer‐derived ceramics with metal additives

AbstractIn this study, silicon oxycarbide (SiOC) is selected as the base polymer to derive a SiOC ceramic (PDC) matrix, and four transition metals M (M = Ni, Mo, Co, and Zr) are individually introduced into the SiOC base to form various SiOC/M systems. SiOC‐Ni, SiOC‐MoCx, and SiOC‐CoSix are obtained by pyrolysis at 1100°C, whereas SiOC‐ZrOx forms upon pyrolysis at 1400°C. The selected SiOC/M systems encompass four different types of phase separation pathways—pure metal, metal carbide, metal silicide, and metal oxide (SiC‐SiO2‐C‐Ni, SiC‐SiO2‐C‐MoCx, SiC‐SiO2‐C‐CoSix, and SiC‐SiO2‐C‐ZrOx). The driving force for crystallization has been analyzed using a Gibbs free energy minimization method and phase fractions of these different PDC systems are calculated based on the lever rule. This work also reveals the energetics related to the quaternary systems and provides guidance to synthesizing metal‐containing PDCs with desired phase contents. In addition, we have examined the broad applicability of the phase content prediction method for a variety of other SiOC/M systems.

Hierarchically Designed Nitrogen-Doped MoS2/Silicon Oxycarbide Nanoscale Heterostructure as High-Performance Sodium-Ion Battery Anode.

Molybedenum disulfide (MoS2) is regarded as a promising anode material for next-generation sodium-ion batteries (SIBs) owing to its high theoretical capacity. However, its low conductivity, large volume changes, and undesirable phase transformation hinder its practical applications. In this study, we synthesize a hierarchically designed core-shell heterostructure based on nitrogen-doped MoS2/C and silicon oxycarbide (SiOC) (N-MoS2/C@SiOC) via the facile pyrolysis of a suspension of an N-MoS2/polyfurfural precursor in silicone oil. The in situ nitrogen doping in a two-dimensional MoS2 structure with carbon incorporation leads to the enlargement of the interlayer spacing and enhancement of the electronic conductivity and mechanical stability, which allows the facile, highly reversible insertion and extraction of sodium ions upon cycling. Further, the nanoscale SiOC shell with surface capacitive reactivity provides a conductive pathway, preventing unfavorable side reactions at the electrode/electrolyte interface and acting as a structure-reinforcing buffer against severe volume expansion issues. As a result, the N-MoS2/C@SiOC composite exhibits high reversible capacity (540.7 mAh g-1), high-capacity retention (>100% after 200 cycles), and excellent rate capability up to 10 A g-1. The simple hierarchical core-shell design strategy developed in this study allows for the fabrication of high-performance metal sulfide anodes as well as other high-capacity anode materials for energy storage applications.

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si4C4O4, C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.

Silicon carbide whiskers reinforced SiOC ceramics through digital light processing 3D printing technology

Polymer derived silicon oxycarbide ceramic materials and silicon carbide whiskers reinforced ceramic composite are prepared through digital light processing (DLP) 3D printing technology in the present work. A new type of UV-curable preceramic polymer is firstly synthesized and then two types of photopolymer resins with and without SiC whiskers as reinforcement are prepared. Due to the high curing rate and good fluidity of the resins, they are applied in DLP 3D printing and various 3D objects with complicated structures and high printing resolution have been printed. The derived ceramic materials show amorphous microstructure and there is no apparent porosity and cracking throughout the whole sample surface of the ceramic materials and the SiC whiskers are uniformly embedded in the ceramic matrix and remain intact and unaffected during the pyrolysis process. The SiC whiskers reduced the shrinkage and mass loss. More importantly, it significantly improves the mechanical performance of the derived ceramic materials in which the compressive strength increases from 77.5 ± 10.2 MPa to 98.4 ± 12.3 MPa. Benefiting from the easiness of the fabrication, high printing resolution and excellent mechanical performance, the derived ceramic materials have great potential applications in various areas.

Chemical Structure and Microstructure Characterization of Ladder-Like Silsesquioxanes Derived Porous Silicon Oxycarbide Materials.

The aim of this work was to synthesize porous ceramic materials from the SiOC system by the sol-gel method and the subsequent pyrolysis. The usage of two types of precursors (siloxanes) was determined by Si/C ratio in starting materials. It allows us to control the size of the pores and specific surface area, which are crucial for the potential applications of the final product after thermal processing. Methyltrimethoxysilane and dimethyldiethoxysilane were mixed in three different molar ratios: 4:1, 2:1, and 1:1 to emphasize Si/C ratio impact on silicon oxycarbide glasses properties. Structure and microstructure were examined both for xerogels and obtained silicon oxycarbide materials. Brunauer-Emmett-Teller (BET) analysis was performed to confirm that obtained materials are porous and Si/C ratio in siloxanes precursors affects porosity and specific surface area. This kind of porous ceramics could be potentially applied as gas sensors in high temperatures, catalyst supports, filters, adsorbents, or advanced drug delivery systems.