Silicon Oxynitride Thin Films Research Articles

Plasma emission spectroscopy and optical properties of reactive-sputtered silicon oxynitride films

Silicon oxynitride (SiO x N y ) thin films were synthesized via reactive direct current magnetron sputtering under different reactive gas mass flow ratios (O2:N2) and discharge powers. The process was monitored by optical emission spectroscopy (OES), while spectroscopic ellipsometry was used to characterize the optical properties of the thin films and deposition rates. In this work, the plasma generated under different deposition parameters is analyzed by monitoring the emission lines of different species (Si I, Ar I, O2, and N2) and these results are then correlated with the corresponding target poisoning process and the optical properties of the grown thin films. According to the spectral analysis, the emission lines proved to be sensitive to the synthesis process as it was possible to differentiate deposition variations when other parameters remained unchanged. Furthermore, similar plasma conditions determined via the emission of different species were found to produce consistent thin film optical properties and vice versa. OES showed to be an effective method of monitoring and controlling the deposition of SiO x N y thin films with specific compositions.

Optical and Mechanical Properties of Si-Based Thin Films for Photonic Applications

In this talk, we will review recent advances in the fabrication and characterization of silicon-based thin film structures for photonic applications, including rare earth doped silicon oxynitrides and luminescent silicon carbonitrides.For Si-based materials to be used in solid-state lighting (SSL) and silicon photonics schemes it is necessary to have precise control of the optical emission from these materials. This can be accomplished using rare earth dopants such as Ce, Tb, and Eu to obtain blue, green, and red emissions, respectively. After a brief review of the latest developments in the field, this talk will focus on Eu-doped films, which are attractive for silicon photonic applications due to their intense emission in the visible spectral region [1]. The films are fabricated by electron cyclotron resonance plasma enhanced chemical vapour deposition (ECR-PECVD) and doping is accomplished using a novel hybrid radio frequency (RF) magnetron sputtering source in the ECR-PECVD reactor chamber [2]. This approach contrasts with traditional doping methods which use metal-organic precursors to introduce rare-earth dopant species into the host matrix. We will discuss the relationship between the photoluminescence, elasticity, and hardness of Eu doped silicon oxynitride (SiON) thin films.As the efficiency of photonic devices can be influenced by the mechanical properties of the deposited films, a good understanding of their mechanical properties is required for the integration of these films in photonic devices. SiNx thin films, for example, play an important role in strain engineering of active photonic devices, such as diode lasers fabricated on GaAs or InP substrates. We will discuss results of a collaboration between McMaster and the Université de Rennes in France, aimed at quantifying the effects of structured dielectric thin films on the generation of a mechanical strain field in the semiconductor through tuning the amount of mechanical stress present in the dielectric thin film, as a function of the details of the deposition process [3].[1] Fahmida Azmi et al., “Tunable Emission from Eu:SiOxNy Thin Films Prepared by Integrated Magnetron Sputtering and Plasma Enhanced Chemical Vapor Deposition”, J. Vac. Sci. Technol. A 40, 043402 (2022); https://doi.org/10.1116/6.0001761[2] J.W. Miller et al., “Integrated ECR-PECVD and Magnetron Sputtering System for Rare-Earth-Doped Si-Based Materials”, Surface and Coatings Technology 336, 99 (2018); doi: 10.1016/j.surfcoat.2017.08.051[3] Brahim Ahammou et al., “Strain engineering in III-V photonic components through structuration of SiNx films”, J. Vac. Sci. Technol. B 40, 012202 (2022); doi: 10.1116/6.0001352

Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.

Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH4/N2 = 1.875 and SiH4/N2O = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH4/N2/N2O = 3:2:2) was not found. Annealing resulted in a thickness decrease and structural transformation for SiOx and SiNx films. Nanocrystalline phases of Si as well as α- and β-Si3N4 were found in the annealed silicon nitride film. Compared to oxide and nitride films, the oxynitride film is the least susceptible to change during annealing. The relationship between the structure, composition, and optical properties of the Si-based films has been revealed. It has been shown that the calculated optical parameters (refractive index, extinction coefficient) reflect structural peculiarities of the as-deposited and annealed films.

Optically modified second harmonic generation in silicon oxynitride thin films via local layer heating

Strong second harmonic generation (SHG) in silicon nitride has been extensively studied—among others, in terms of laser-induced SHG enhancement in Si3N4 waveguides. This enhancement has been ascribed to the all-optical poling induced by the coherent photogalvanic effect. Yet, an analogous process for Si3N4 thin films has not been reported. Our article reports on the observation of laser-induced threefold SHG enhancement in Si3N4 thin films. The observed enhancement has many features similar to all-optical poling, such as highly nonlinear power dependence, cumulative effect, or connection to the Si3N4–Si interface. However, identical experiments for low-oxygen silicon oxynitride thin films lead to complex behavior, including laser-induced SHG reduction. Following a thorough experimental study, including the effects of repetition rate or pulse length, the observed results were ascribed to heat-induced SHG variation. In addition to revealing a new mechanism of laser-induced SHG variation, our results also provide a means to identify this mechanism.

Silicon oxynitride nanofilms prepared by PLD with controlled Eu-local concentration for broadband white light emitters

We report the successful preparation and characterization of active silicon oxynitride thin films with controlled europium (Eu) doping by alternated pulsed laser deposition. The successful Eu doping with a nanostructured dopant distribution, as well as the stoichiometry of the oxynitride film, have been determined by ion beam analysis (RBS). The oxidation state of the incorporated Eu ions has been determined by in-depth x-ray photoelectron spectroscopy (XPS) and it is shown that the Eu ions are in the 2+ state, in contrast to the usual results found in oxide matrices for which the 3+ oxidation state prevails. The Eu-doped films show an intense broadband emission (FWHM >210 nm) associated to the optical transition 4f65d1 → 8S7/2 of the Eu2+ ions within the amorphous matrix. As expected, the intensity of the emission band increases as the Eu concentration increases, and it is remarkable that the emission shifts towards longer wavelengths. In terms of the chromatic coordinates (CIE) this implies a color tuning from a bluish to orange that enables color tunable emission, and potential white like emission by combining layers with different Eu2+ ions concentration. Therefore, the developed oxynitride films with controlled Eu2+ ions concentration achieved by PLD are promising for the development of color -tailored LED's.

The effect of gas composition on the properties of silicon oxynitride thin film prepared by low-pressure inductively coupled Ar/N2 plasma

Silicon nitride (Si3N4) has been widely used in semiconductor devices and applications, including the passivation layer in organic light-emitting diode (OLED). However, it becomes more important to adjust the refractive index value of silicon nitride layers. For example, the refractive index difference between the passivation layer and emission layer is one of the problems degrading OLED performance. Recently, silicon oxynitride (SiOxNy) thin films possessing different refractive indexes have been fabricated by varying their nitrogen and oxygen content. In this work, we control the refractive index of SiOxNy thin film by changing the N2 and Ar flow ratio in 13.56 MHz radio-frequency inductively coupled plasma (RF-ICP). To study the effects of gas composition in the plasma on the properties of thin films, nitrogen atom (N) and nitrogen molecular ion (N2+) density are investigated using actinometry and simulation via the synthetic spectrum method, respectively. We observed that when the gas ratio defined as [N2/(N2+Ar)] increases from 0.1 to 0.9, the density of N2+ increases from 4.76×1015m − 3 to 1.71×1016m − 3 and the refractive index of the thin film increases from 1.54 to 1.57. The results indicate that N2+ plays the important role in changing the properties of thin film during the plasma process.

Characterisation of silicon oxynitride thin films and their response to swift heavy-ion irradiation

Silicon oxynitrides (a-SiO x N y ) are materials whose composition ranges between two binary materials: a-SiO2 and a-Si3N4. In this work, we present a systematic study of the fine structure of the damaged regions produced by swift heavy-ions (SHIs), or ‘ion-tracks’ and quantify the density variation profiles with respect to composition. Thin films were deposited by plasma-enhanced chemical vapor deposition (CVD), where thickness, density, stoichiometry and bond configuration were initially determined. The fine structure and radial size of the ion tracks was determined using small angle x-ray scattering. The tracks exhibit a core–shell cylindrical geometry, with an under-dense core surrounded by an over-dense shell with a smooth transition between the two regions. We observed two trends with composition: a constant increasing ion track radius is observed when the O/Si ratio is below one (. And saturation of the radial dimensions above this value, being similar to a-SiO2. The IR spectra allowed to quantify the bond configuration and its evolution with fluence. After irradiation, the energy deposited by the SHI irradiation leads to a preferential damage of Si–N bonds. IR spectroscopy also showed the formation of new Si–H bonds with increasing fluences and resulting in a rather complex ion-induced structural modification of the a-SiO x N y network.

Influence of Nitrogen on the Luminescence Properties of Ce-Doped SiOxNy

We report wideband photoluminescent emission from cerium-doped silicon oxynitride (Ce-doped SiOxNy) thin films deposited using electron cyclotron resonance plasma enhanced chemical-vapor deposition (ECR-PECVD). The in situ doping with Cerium (Ce) was performed using a volatile metal organic powder, (Ce[tmhd]4). Oxygen was gradually substituted by nitrogen to produce SiOxNy thin films with varying nitrogen to oxygen ratio, to explore the effect of nitrogen on the photoluminescence (PL) of the thin films. Thin film composition and optical constants were determined using Rutherford back scattering and ellipsometry techniques, respectively. Samples subjected to post-deposition thermal annealing yielded considerably stronger blue/white PL emission than as-deposited ones, due to the formation of Ce-containing clusters at a temperature of 1000 °C and above. X-ray diffraction (XRD) revealed no crystalline structure in samples annealed at elevated temperatures. The optimum layer composition and annealing condition to produce SiOxNy thin films with maximized Ce3+ emission was determined. Besides, hydrogen fluoride etching along with hydrogen passivation demonstrated the enhancement of the PL emission of the thin films.

Effects of various substrate materials on microstructural and optical properties of amorphous silicon oxynitride thin films deposited by plasma-enhanced chemical vapor deposition

Plasma-enhanced chemical vapor deposition (PECVD) technique is well suited for fabricating optical filters with continuously variable refractive index profiles; however, it is not clear how the optical and microstructural properties of thin films differ when deposited on different substrates. Herein, silicon oxynitride films were deposited on silicon, fused silica, and glass substrates with two stoichiometric ratios by PECVD, using silane, ammonia, and nitrous oxide gasses, to investigate the effects of the substrate used on the optical properties and microstructures of the films. All the deposited films were amorphous. Further, the types and amounts of Si-centered tetrahedral Ox-Si-Ny bonds formed were based upon the substrates and stoichiometric ratios used; Ox-Si-Ny bonds with higher elemental nitrogen content were formed on Si substrates, which lead to obtaining higher refractive indices. The relationship between the surface roughness of the film and type of substrate was discussed. The extinction coefficients of all the films were very small, and the films exhibited low absorption. The refractive indices of the films formed on the different substrates had a maximum difference of 0.03. The deposition rates of the films increased in the order of fused silica, glass, and silicon.

Multilevel Bipolar Electroforming-Free Resistive Switching Memory Based on Silicon Oxynitride

Resistive random-access memory (RRAM) devices are fabricated by utilizing silicon oxynitride (SiOxNy) thin film as a resistive switching layer. A SiOxNy layer is deposited on a p+-Si substrate and capped with a top electrode consisting of Au/Ni. The SiOxNy-based memory device demonstrates bipolar multilevel operation. It can switch interchangeably between all resistance states, including direct SET switching from a high-resistance state (HRS) to an intermediate-resistance state (IRS) or low-resistance state (LRS), direct RESET switching process from LRS to IRS or HRS, and SET/RESET switching from IRS to LRS or HRS by controlling the magnitude of the applied write voltage signal. The device also shows electroforming-free ternary nonvolatile resistive switching characteristics having RHRS/RIRS > 10, RIRS/RLRS > 5, RHRS/RLRS > 103, and retention over 1.8 × 104 s. The resistive switching mechanism in the devices is found to be combinatory processes of hopping conduction by charge trapping/detrapping in the bulk SiOxNy layer and filamentary switching mode at the interface between the SiOxNy and Ni layers.

Characterization of Europium Doped Silicon Oxide, Silicon Oxynitride, and Silicon Nitride Films Prepared By Integrated Ecr-PECVD and Magnetron Sputtering

The compatibility of Si-based light sources with mainstream metal-oxide semiconductor technology has become very interesting over the past decades due to their potential in integrated optoelectronics circuits of monolithic Si [1]. A very promising approach to improve the light emission from silicon-based materials is doping silicon with rare earth elements, and numerous research is involved in this field [1]. However, there are only a few works on europium (Eu) doped silicon-based matrix. In this work, Eu doped silicon oxide, silicon oxynitride, and silicon nitride thin films were deposited on P (100) Si substrates using integrated electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) and magnetron sputtering. Silane (SiH4), oxygen (O2), and Nitrogen(N2) gases were used as precursors and solid Eu as the sputtering target. The integrated ECR-PECVD and sputtering system allows tunable and highly consistent Eu doping concentration, better control of the layer stoichiometry along with less hydrogen incorporation in the deposited film compared to conventional CVD systems [2]. Several thin films were investigated using room temperature photoluminescence (PL) and X-ray diffraction (XRD). A detailed investigation of the effect of annealing on the PL was performed. The annealing temperature was varied from 500 OC to 1200 OC in nitrogen and a mixture of nitrogen and hydrogen atmospheres. It was observed that the intensity of the PL spectra increased with increasing annealing temperature. Besides, the hydrogen passivation effect has been studied in this work, which shows that hydrogen passivation increases the intensity of the peak. Based on the XRD measurements, we have found that the amorphous silicon oxide structure changes to a crystalline structure by adding nitrogen in the film. Interestingly silicon oxynitride and silicon nitride films do not show any luminescence at room temperature. The influence of the precursors' gases in the atomic percentage of the thin films was analyzed by Rutherford Backscattering spectrometry (RBS). In addition to it, the thickness and the index of refraction were characterized by variable angle spectroscopic ellipsometry (VASE).Reference: 1. Lin, Z., Huang, R., Wang, H., Wang, Y., Zhang, Y., Guo, Y., ... & Li, H. (2017). Dense nanosized europium silicate clusters induced light emission enhancement in Eu-doped silicon oxycarbide films. Journal of Alloys and Compounds, 694, 946-951.2. Miller, J. W., Khatami, Z., Wojcik, J., Bradley, J. D. B., & Mascher, P. (2018). Integrated ECR-PECVD and magnetron sputtering system for rare-earth-doped Si-based materials. Surface and Coatings Technology, 336, 99-105.

(Invited) Fabrication and Characterization of B- or P- Doped Silicon Nanoparticles Embedded in SiOxNy Transparent Matrix

Silicon nanocrystals (Si-Ncs)-based devices are some of the most studied nanomaterials and could be of great interest in many fields such as electronics1, optical sensing2, photovoltaics3 and biomedicine4. First of all, it is important to control their size, shape and aggregation which are parameters related to their potential applications. In our case, these Si-Ncs are embedded in an insulating dielectric matrix of SiOxNy, resulting in a composite material with a tunable effective bandgap. Doping Si-Ncs can enlarge their applicability by modifying their electrical properties5, the effective bandgap5, the light absorption range and the nanoparticles photoluminescence.In this study, we used a magnetron sputtering deposition system to deposit silicon rich silicon oxynitride (SiOxNy) thin films. Then, n- and p-type dopants such as boron, arsenic and phosphorus were introduced in the thin films using ion implantation which was carried out at different doses and accelerating energies5. Thanks to a thermal treatment at high temperature, silicon atoms diffuse and nucleate to form silicon nanostructures with size varying between 1.5 nm and several dozen nanometers. This step is necessary for the phase separation leading to the nanoparticles nucleation.Atom probe tomography (APT) and energy dispersive X-ray mapping in scanning TEM mode, coupled with spectrum imaging on silicon plasmon, were performed to localize the dopant impurities versus the Si-Ncs. The results have showed that n-type (P and As) dopants were energetically favored to be placed into the Si-Ncs core, whereas p-type dopants are preferentially located at the Si-NCs/SiOxNy interface.The effect of composition and post-deposition annealing temperature on the Si-Ncs light-emitting properties was investigated by the examination of photoluminescence (PL) evolution. The dopants distribution profiles within the host matrix were determined by Rutherford Backscattering Spectroscopy (RBS). EFTEM combined with X Rays mapping analysis have exhibited that the incorporation of arsenic at a high doping level (dose of 5x 1016 As/cm2) leads to an increase of the Si-Ncs size by a factor around 4, precisely from 4 nm to more than 20 nm (Figure 1). On the other hand, the EFTEM-X Rays analysis was unable to detect boron dopants in the SiOxNy films. At this doping level, it could be possible to observe a localized surface plasmon resonance (LSPR) 7.For both n- and p-type dopants, the silicon nanoparticles crystalline fraction was found to be much higher than the undoped structures. The dopants facilitate the nucleation and growth of crystalline nanoparticles. This behavior is quite similar to that observed for thin amorphous silicon films. The results have showed that the nanostructures shape have different behaviors depending on the dopants.Finally Schottky diodes were prepared. The I-V characteristic curves show that the electrical conduction in the -doped structures increases with the dopant doses and we obtained a rectifier behavior. The results have showed that the heavily As-doped silicon structures are limited by the tunnel oxide thickness between the large Si-Ncs. These results are very encouraging when aiming at implementing such nanocomposite materials in photovoltaic solar cells.

Optoelectronic Properties of Ce3+ Doped Silicon Oxide and Oxynitride Electroluminescent Devices

In this work, we propose a new type of silicon-based electroluminescent device. The thin film emitting layers of the device were deposited using Electron-Cyclotron-Resonance Plasma Enhanced Chemical-Vapor Deposition (ECR-PECVD) with in-situ Ce3+ doping on a P-type silicon substrate. Oxygen was gradually substituted by nitrogen to produce silicon oxynitride thin films with different layer compositions. Refractive indices extracted from variable-angle spectroscopic ellipsometry (VASE) measurements classified the thin films into two main groups, silicon oxide (SiOx) and silicon oxynitride (SiOxNy). The thin film composition was studied by Rutherford Backscattering Spectrometry (RBS), verifying the gradual increase in oxygen content. Photoluminescence (PL) spectroscopy of the emitting layer was obtained using a 375 nm laser as an excitation source. All samples were subjected to the post-deposition annealing treatment for 1 hour at different temperatures varying from 600 to 1200°C in 95% N2 and 5% H2 ambient gas environment, yielding considerably stronger blue PL emission than as-deposited ones. PL intensity of SiOx showed a sudden increase due to the formation of Ce2Si2O7 clusters when annealed at 1200°C. Internal Quantum Efficiency (IQE) and External Quantum Efficiency (EQE) were measured using an integrating sphere and a UV-Vis-NIR spectrometer. The optimum layer composition and annealing condition to produce SiOxNy thin films with maximized Ce3+ excitation efficiency were obtained. To further investigate the electrical performance of the produced samples, the thin films were coated with indium tin oxide (ITO) and aluminum (Al) on the top and bottom side of the thin film respectively. Current-Voltage (I-V) measurements showed improved charge injections in SiOxNy compared to SiOx, due to the reduction of the bandgap upon the incorporation of nitrogen.

Average power handling capability on SiON thin film coplanar waveguide interconnections for MMICs

In this study, we investigated the average power handling capability (APHC) of silicon-oxy-nitride (SiON) thin-film-coated coplanar waveguide (CPW) interconnections for monolithic microwave integrated circuits (MMICs). SiON thin films were prepared through very-high-frequency plasma-enhanced chemical vapor deposition at 40.68 MHz. Films prepared under various annealing conditions were studied. The microwave characteristics of CPW interconnections were analyzed for fitting to the International Technology Roadmap for Semiconductors. SiON thin films were annealed under a vacuum condition for 60 s at 700 °C, 900 °C and 1100 °C. The use of coated and annealed SiON thin films on the low-resistivity Si substrate effectively improved the substrate resistivity, reduced microwave attenuation at 1100 °C, and enhanced the APHC of CPW interconnections. These results indicate that the proposed method is suitable for application to MMICs.

Zero temperature coefficient of sound velocity in vitreous silicon oxynitride thin films

Vitreous silicon oxide (v-SiO2) shows anomalous phonon properties such as the positive temperature coefficient of velocity (TCV). Variation of the Si–O–Si bond angle between SiO4 tetrahedrons has been recognized to be the key, but the origin of TCV still remains unclear. In this study, we controlled the bond angle by doping nitrogen and measured TCV of vitreous silicon oxynitride thin films with various nitrogen concentrations using picosecond ultrasonics. TCV significantly decreases by adding a small amount of nitrogen, and it shows positive to negative values as the nitrogen concentration increases. We evaluated the bond-angle change by Fourier-transform infrared spectroscopy, which decreases with the increase in the nitrogen content. We also find that the temperature rise in nondoped v-SiO2 decreases the bond angle, leading to an increase in the sound velocity. We then reveal theoretically that the bond-angle change dominates the origin of the positive TCV. This study indicates the existence of a zero-TCV single material, and we discover that the specific content of v-SiO1.71N0.19 achieves this.

Precipitation of metal nitride nanoparticles from amorphous (M,Si)-(N,O) thin films (M =Nb, Zr)

Abstract Crystallization of metal nitride nanoparticles from amorphous matrix upon thermal annealing was investigated by studying the plasmonic absorption behavior of the nanoparticles. Amorphous silicon oxynitride thin films containing various amounts of M (M = Zr, Nb) were deposited by RF magnetron sputtering from a M/Si composite target using nitrogen as a reactive sputtering gas. The optical transmittance at around 700 nm of the annealed thin film decreased due to plasmonic absorption by the metallic NbN nanoparticles. The nanoparticles precipitated homogeneously in the Si(N,O) matrix upon annealing the Nb1-xSix(N,O) thin film with x = 0.7 at 700°C. In contrast, for Zr1-ySiy(N,O) thin films with y = 0.4 and 0.5, ZrN nanoparticles did not precipitate even after thermal annealing due to the stability of zirconium oxide in the Si(N,O) matrix, resulting in no significant change in the interference color of the thin films.

Structural and optical properties of nc-Si in SiOxNy matrix deposited by laser ablation for optoelectronic applications

In this work, we show the development of SiOxNy (silicon oxynitride) thin films using the laser ablation technique. Instead of commonly used precursor materials SiH4 and NH3 or N2, hereby, we report the deposition using crystalline silicon targets and N2 precursors. The experiment was carried out in such a way that we can eradicate the drawback of hydrogen concentration in the thin films (due to silane precursor) and finally, adequate deposition conditions were found which allowed obtaining the material with suitable optoelectronic properties. Numerous experiments varying the deposition pressure (0.4–6 Pa) were carried out making possible the formation of different kinds of the stoichiometry of the material. For one set of thin films (lower pressure), silicon rich silicon-oxynitride thin films (SRSON) were obtained, whereas, for the other half (higher pressure) it was oxygen-rich silicon oxynitride (ORSON) kind of stoichiometry. Fourier transform infrared spectroscopy (FTIR) shown the dominance of Si-N bonds for the samples deposited at lower pressure, whereas, for the samples deposited at higher pressure shift in the absorption bands towards Si-O bonds was observed. For the middle-pressure range ;(0.8–2 Pa) depending on the composition of SiOxNy thin films, a band gap variation from 2.08 eV to 4.36 eV was obtained. The same could be correlated with the Si, N and O ratios in the deposited thin films. From the XPS analysis, it was found that the Si content was found to be reduced, whereas, N content was found to be varying randomly as an effect of an increase in the pressure. Lately, it also shown an overall increase in the O concentration. For the same range of pressure value (0.8–2 Pa), Raman, X-ray diffraction (XRD) and HRTEM analysis illustrated the formation of crystalline silicon nanoparticles from the as-deposited thin films. Overall, confirmation of Si nanoparticles embedded in an amorphous matrix of SiOxNy can be established from these analyses. Photoluminescence (PL) spectra also demonstrated the visible emission which remarks the quality of material and its tendency for the optical applications. Intense and homogenous PL was observed for samples grown at 2 Pa. Using unique deposition method presented in this manuscript with a great control over the composition and hence, on the optoelectronic properties of Si related thin films can be used for the future optoelectronic applications.

Material Structure and Mechanical Properties of Silicon Nitride and Silicon Oxynitride Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Silicon nitride and silicon oxynitride thin films are widely used in microelectronic fabrication and microelectromechanical systems (MEMS). Their mechanical properties are important for MEMS structures; however, these properties are rarely reported, particularly the fracture toughness of these films. In this study, silicon nitride and silicon oxynitride thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) under different silane flow rates. The silicon nitride films consisted of mixed amorphous and crystalline Si3N4 phases under the range of silane flow rates investigated in the current study, while the crystallinity increased with silane flow rate in the silicon oxynitride films. The Young’s modulus and hardness of silicon nitride films decreased with increasing silane flow rate. However, for silicon oxynitride films, Young’s modulus decreased slightly with increasing silane flow rate, and the hardness increased considerably due to the formation of a crystalline silicon nitride phase at the high flow rate. Overall, the hardness, Young modulus, and fracture toughness of the silicon nitride films were greater than the ones of silicon oxynitride films, and the main reason lies with the phase composition: the SiNx films were composed of a crystalline Si3N4 phase, while the SiOxNy films were dominated by amorphous Si–O phases. Based on the overall mechanical properties, PECVD silicon nitride films are preferred for structural applications in MEMS devices.

A Study on the Electronic Properties of SiOxNy/p-Si Interface

In this study, we investigated the electrical properties of Sn/SiOxNy/p-Si metal-insulator layer-semiconductor (MIS) structure. Silicon oxynitride (SiOxNy) thin film was grown on chemically cleaned p-Si substrate by the plasma nitridation process. The chemical composition and surface morphology of the thin film were analyzed using X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Electrical measurements of the devices (e.g. current-voltage (I-V ), capacitance-voltage (C-V ), capacitance and conductance-frequency characteristics (C-f and G-f )) were performed at room temperature. The characteristic parameters of the SiOxNy/p-Si interface such as energy position, interface state density and relaxation time constant were obtained from admittance measurements over a wide range of frequencies (from 1 to 500 kHz) for the values of the forward bias between 0.0 V ≤ V ≤ 1.1 V. The values of the interface state density and their relaxation time constant changed from 3.684 × 1013 cm− 2 eV− 1 to 3.216 × 1012 cm− 2eV− 1 and from 1.770 × 10− 5 s to 6.277 × 10− 7 s, respectively. The obtained values of the interface state density were compared to those of the oxides grown by the other techniques. The experimental results clearly show that the density and location of interface states has a significant effect on electrical characteristics of the MIS structure.

Effect of deposition conditions on physical properties of sputtered silicon oxynitride thin films on float glass

AbstractSilicon oxynitride layers have been widely used to tailor the optical performance and mechanical resistance of multilayer optical coatings. The key issue for their reliable large‐scale application on a glass substrate is the effect of technological parameters on their performance. Here we report on the interrelationship between the conditions of the reactive magnetron deposition process and composition, structure and in turn optical and mechanical properties. The process gas composition and pressure level exhibit a strong influence on the film properties, whereas only moderate effect of magnetron power was observed. The O/(O+N) ratio of the films changes from 0.33 to 0.90 and the film density varies between 2.66 g.cm−3 and 1.85 g.cm−3 along with the increase in the process gas pressure from 0.58 Pa to 1.02 Pa. The refractive index shifts between 1.81 and 1.48 and the residual stress of the film varies in the range from compressive (−385 MPa) to tensile (26 MPa). Hardness and reduced modulus follow the same trend and decline with the increase in process pressure from 12.1 GPa to 2.1 GPa and from 120.3 to 31.6 GPa, respectively. The abrasive wear resistance decreases with the nitrogen content in the films.