Average power handling capability on SiON thin film coplanar waveguide interconnections for MMICs

Abstract

In this study, we investigated the average power handling capability (APHC) of silicon-oxy-nitride (SiON) thin-film-coated coplanar waveguide (CPW) interconnections for monolithic microwave integrated circuits (MMICs). SiON thin films were prepared through very-high-frequency plasma-enhanced chemical vapor deposition at 40.68 MHz. Films prepared under various annealing conditions were studied. The microwave characteristics of CPW interconnections were analyzed for fitting to the International Technology Roadmap for Semiconductors. SiON thin films were annealed under a vacuum condition for 60 s at 700 °C, 900 °C and 1100 °C. The use of coated and annealed SiON thin films on the low-resistivity Si substrate effectively improved the substrate resistivity, reduced microwave attenuation at 1100 °C, and enhanced the APHC of CPW interconnections. These results indicate that the proposed method is suitable for application to MMICs.