Abstract
In this study, we investigated the average power handling capability (APHC) of silicon-oxy-nitride (SiON) thin-film-coated coplanar waveguide (CPW) interconnections for monolithic microwave integrated circuits (MMICs). SiON thin films were prepared through very-high-frequency plasma-enhanced chemical vapor deposition at 40.68 MHz. Films prepared under various annealing conditions were studied. The microwave characteristics of CPW interconnections were analyzed for fitting to the International Technology Roadmap for Semiconductors. SiON thin films were annealed under a vacuum condition for 60 s at 700 °C, 900 °C and 1100 °C. The use of coated and annealed SiON thin films on the low-resistivity Si substrate effectively improved the substrate resistivity, reduced microwave attenuation at 1100 °C, and enhanced the APHC of CPW interconnections. These results indicate that the proposed method is suitable for application to MMICs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
