Abstract
PECVD hydrogenated silicon oxynitride (SiON) thin film, due to its excellent chemical and physical properties, is widely used in flexible encapsulation as an protective layer. However, SiON thin film cracking severely restricted the performance of the thin film encapsulation, and cannot be effectively tackled by flexible electronics industry. So improving the quality of the SiON thin film and preventing thin film cracking is crucial to flexible electronics industry. In this paper, effects of RF power, pressure, process gas on stress property in SiON thin film were studied in detail by stress meter. Therefore, increasing RF power, pressure and decreasing H2 flow can prevent SiON thin film cracking.
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