More and more attention is being drawn on the wide-bandgap power MOSFET, for its performance is far superior to the traditional silicon MOSFET. Driving technology is one of the key factors that influence the performance of device. In this paper, a high-speed drive circuit topology is proposed. The principle of the improved drive circuit is simple and easy to be implemented. Compared with the traditional design, it can reduce the switching time while maintaining the original driving performance.
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