Abstract

Pulse generator in an ultrasound system produces electrical pulsing signals to drive piezoelectric transducer, which causes mechanical vibration of the crystals and generates sound waves. Different from conventional imaging short pulses, high-power ultrasonic system for therapeutic applications requires MHz pulses bursts of up to tens of milliseconds. The capability of switching high voltage (±90 V) at multi-MHz, delivering effective power efficiently, is crucial for practical systems. The advantages of low device loss at high switching frequency, and high power density make gallium nitride (GaN) high electron mobility transistors better devices than traditional silicon (Si) MOSFETs in such system. The GaN-based high-frequency transformer push–pull inverter presented in this paper is capable to produce high energy pulsating output with burst pulse length up to 50 ms and bipolar pulse amplitude of 180 Vpp. The maximum pulse frequency can be up to 10 MHz. The peak output power is 90 W with power density of 50.85 W/in2. The peak power for all the 128 pulser channels reaches up to 11.5 KW with average power of 192 W. This is the highest output power for pulse drivers that have been reported. A novel power transistor based RF switch circuit is also proposed in this design as the interface between image signal, high power signal, and return signal.

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