Silicon Materials Research Articles

A fast-switching and ultra low-loss snapback-free reverse-conducting SOI-LIGBT with Adjustable Carrier Technology

A snapback-free Reverse-Conduction Silicon On Insulator Lateral Insulate Gate Bipolar Transistor (RC SOI-LIGBT) with Adjustable Carrier Technology (ACT LIGBT) is proposed in this paper. ACT LIGBT adds Semi-Insulating Polycrystalline Silicon (SIPOS) material on the extended gate dielectric, and introduces the potential of the surface SIPOS into the P-type drift region (P-Drift) through SiO2 trenches. ACT LIGBT generates the inversion layer of electrons in the P-Drift due to the linear potential distribution brought by the high resistance characteristic of SIPOS, resulting in the adjustment of the number of electrons and holes, and forming the technology of ACT. Additionally, ACT LIGBT adds a hole extraction path during it turned off. Meanwhile, compared to SSA LIGBT, ACT LIGBT optimized the BV (700V) by 34 %, while also optimizing the Von (1.69V) by 25 %, turn-off time (toff = 12ns) by 92 %, turn-off loss (Eoff = 0.69 mJ/cm2) by 79 %, and reverse recovery charge (Qrr = 32.98 μC/cm2) by 32.5 %, ultimately achieving a better compromise relationship among BV, Von, toff, Eoff, and Qrr.

The Effect of Chemical Disinfectants on Maxillofacial Silicone With the Addition of Silver Nanoparticles: An Original Research.

Background and objective Silicone has emerged as the most widely accepted material for facial prosthesis fabrication.However, silicone materials have certain limitations. Several techniques have been investigated to lessen the degradation of the polymer, such as the use of nanoparticles and nano-oxides, etc.In this study, we aimed to evaluate the effect of various chemical disinfectants on color stability, hardness, and surface roughness of maxillofacial silicone, after the addition of silver nanoparticles. Materials and methods This was an in vitro study carried out in the Department of Prosthodontics, Sharad Pawar Dental College and Hospital; 80 samples of maxillofacial silicone incorporated with silver nanoparticles (in a concentration of 20 ppm) were fabricated in a mold of 3 x 10 mm dimension disc. The samples were then tested for surface roughness (using a digital roughness tester), Shore A hardness (using a durometer), and color stability (using a spectrophotometer). The samples were then classified into four groups according to various disinfectants used: sodium hypochlorite (1% w/w), chlorhexidine gluconate (0.2%), and neutral soap, and distal water was deemed the control group. After 48 hours, the samples underwent retesting to assess for changes in readings under the same parameters (i.e., surface roughness, Shore A hardness, and color stability)to obtain results, i.e., the samples were testedafter fabrication, before immersion, and 48 hours after immersion in disinfectants. Results When taking into account the surface roughness, the maximum roughness value was observed in the sodium hypochlorite group and the least roughness value in distilled water (mean % change of 38.359 to negligible change in the distilled water group). As for the Shore A hardness, the maximum hardness value was seen in the sodium hypochlorite group and the least hardness value in distilled water (mean % change of 15.780 to 2.125 in distilled water). Regarding color stability, the maximum increase in color values was seen in the sodium hypochlorite group (mean: 2.4) followed by the neutral soap group (mean: 1.653); the chlorhexidine gluconate group (mean: -0.287)showed the maximum decrease in color value from the initial to the final phase. Conclusions Based on our findings, surface roughness altered the most when samples were immersed in 1% sodium hypochlorite disinfectant and the leastwhen samples were immersed in neutral soap disinfectant. Shore A hardness altered the most when samples were immersed in 1% sodium hypochlorite disinfectant, but altered the least when samples were immersed in neutral soap disinfectant. Color stability altered the most when samples were immersed in neutral soap disinfectant, but altered the least when samples were immersed in 0.2% chlorhexidine gluconate. Disinfection with neutral soap seems to lead to fewer changes in physical properties (i.e., surface roughness and Shore A hardness) and hence is recommended as a disinfectant for silicone prosthesis. However, our study also showed that 0.2% chlorhexidine gluconate had the least effect on the parameter of color stability, and hence it could be the disinfectant of choice for prostheses with high esthetic requirements.

A realistic assessment of the prospect that silicon be replaced by other materials for IC application

Silicon is the most significant material in the semiconductor industry, and the whole semiconductor industry is established on silicon materials. Silicon accounts for about a third of the value of the material used to make the entire wafer. However, with the development of the semiconductor industry and integrated circuit chips, the requirements for semiconductor materials are also increasing. In some application scenarios, silicon is gradually unable to meet peoples higher requirements. For example, in high-frequency applications, the characteristics of silicon may be limited. At higher frequencies, the conductivity of silicon may not be ideal, leading to signal delay and performance loss. Therefore, finding alternative materials for silicon has become one of the current research topics for scientists, in order to solve some problems that silicon cannot solve under specific conditions. In this article, we mainly explore the characteristics and advantages of carbon nanotubes, gallium arsenide, and silicon carbide materials to analyze the feasibility of these materials replacing silicon in the field of integrated circuits.

Device and circuit-level performance evaluation of DG-GNR-DMG vertical tunnel FET

This work presents the comparative study of Graphene Nanoribbon (GNR) based channel Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel Field Effect Transistor (VTFET) performance with all Silicon material Tunnel Field Effect Transistor. The two-dimensional (2D) material GNR has been proposed in the channel material to enhance the device performance due to its low bandgap, high mobility, and high saturation velocity. The proposed device's DC, RF, and circuit-level performance analysis has been carried out for the first time. GNR-based channel VTFET shows a better average subthreshold swing (SSAVG) of 16 mV/decade compared to Silicon Vertical Tunnel FET (36 mV/decade) at a drain voltage VDS = 0.5 V. The study of temperature effects on the DC parameters is also included along with the analog/RF FOMs for the proposed two structures. In addition, the performances are compared with other reported works; it is observed that DG-GNR-DMG-VTFET offers better results than Silicon (Si)-based VTFET and other said TFET work. Finally, circuit-level analysis has been done by designing inverter and ring oscillator circuits for the proposed structures, and performance is compared in these two devices. The market-available Silvaco ATLAS TCAD simulator has been used for device-level simulation. Further, circuit-level analysis has been carried out in the Cadence Virtuoso tool using a look-up table-based Verilog-A model.

Five-Surface Phosphor-in-Glass for Enhanced Illumination and Superior Color Uniformity in Large-View Scale LEDs.

A novel five-surface phosphor-in-glass (FS-PiG) structure for high illumination and excellent color uniformity in large-view scale LEDs for sensor light source application is demonstrated. YAG phosphor (Y3Al5O12:Ce3+) was uniformly mixed with ceramic and sintered at 680 °C to form a phosphor wafer. Sophisticated laser engraving was employed on the phosphor wafer to form saddle-shaped large-view scale FS-PiG LEDs. The performance of the FS-PiG LEDs exhibited an illumination of 401 lm, average color temperature (CCT) of 5488 K ± 110 K, and color coordinates (CIE) of (0.3179 ± 0.003, 0.3352 ± 0.003). In contrast to convention single-surface phosphor-in-glass (SS-PiG) LEDs, the performance exhibited an illumination of 380 lm, average CCT of 5830 K ± 758 K, and CIE of (0.3083 ± 0.07, 0.3172 ± 0.07). These indicated that the performance of the FS-PiG LEDs was higher than the SS-PiG LEDs for illumination, CCT, and CIE by 1.7, 7, and 23 times, respectively. Furthermore, the FS-PiG LEDs demonstrate a lower lumen loss of 2% and a reduced chromaticity shift of 5.4 × 10-3 under accelerated aging at 350 °C for 1008 h, owing to the high ceramic melting temperature of up to 510 °C. In this study, the proposed FS-PiG large-view scale LEDs with excellent optical performance and high reliability may be promising candidates to replace the conventional phosphor-in-organic silicone material used in high-power LEDs for the next generation of sensor light sources, display, and headlight applications.

A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications

Spiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes. Future artificial intelligence applications will demand the execution of tasks with increasing complexity and over timescales spanning several decades. The multi-timescale requirements for certain tasks cannot be attained effectively enough through the existing silicon-based solutions. Indium-Gallium-Zinc-Oxide thin-film transistors can alleviate the timescale-related shortcomings of silicon platforms thanks to their bellow atto-ampere leakage currents. These small currents enable wide timescale ranges, far beyond what has been feasible through various emerging technologies. Here we have estimated and exploited these low leakage currents to create a multi-timescale neuron that integrates information spanning a range of 7 orders of magnitude and assessed its advantages in larger networks. The multi-timescale ability of this neuron can be utilized together with silicon to create hybrid spiking neural networks capable of effectively executing more complex tasks than their single-technology counterparts.

Fabrication of functional diatomaceous earth with enhanced papain enzyme adsorption

Diatomaceous earth (DE) is a sedimentary rock comprising fossilized shells of diatoms, which are a type of algae. The shells of the diatoms are made of silicon dioxide, which is also the main component of DE. DE has excellent moisture absorption and desorption properties and is widely used as an adsorbent, abrasive, insulator, catalyst, and carrier in the stationary phase. It has also been widely studied for its application as a new silicon material in emerging growth fields, such as biosensors. However, because organic matter is adsorbed on the surface of DE, the organic matter must be removed to exploit the properties of mesoporous silica. In this study, the organic matter on the DE surface was removed by alkali treatment to expose the pores and increase the adsorption capacity. Additionally, papain was physisorbed onto DE using a rotator, and l-cysteine was added for papain activation. Under these optimised conditions, the activation of the papain enzyme was effective, resulting in improved DE performance. The adsorption power of DE was correlated with the amount of papain adsorbed, which, in turn, was correlated with its absorbance. Trichloroacetic acid was added to stop the reaction, and the absorbance was measured. The prepared samples were designated as papain/DE (P/DE) complexes. The final concentration of the P/DE was 1 mg/mL. In addition, cross-linked and non-cross-linked P/DE samples were prepared using N-hydroxysuccinimide and water-soluble carbodiimide in a 5:3 ratio and compared. The results showed that surface treatment and functionalisation of DE improved its functionality (enzyme activity), indicating its potential as a new DE material.

Environmental impact assessment of the manufacture and use of N- type and P-type photovoltaic modules in China

For a long time, solar power has been considered a clean and non-polluting energy source because it absorbs sunlight without consuming other energy or materials and does not emit pollutants. Nevertheless, the manufacturing and end-of-life stages of solar power systems leave an environmental footprint and produce pollutants. Hence, a global perspective on photovoltaic (PV) systems using life cycle assessment methodology is necessary. Here, we investigated the life cycle impacts of P- and N-type PV modules in terms of their energy consumption, carbon emissions, and human toxicity potential. In addition, the energy payback durations of P- and N-type PV modules were computed. In this study, we used the Life Cycle Assessment Basic Database from the National Engineering Laboratory of Industrial Big Data Application Technology at Beijing University of Technology to create a life cycle assessment model for N-type PV modules. Subsequently, we performed a life cycle assessment of Chinese silicon N-type- and P-type PV modules. The research system encompassed the production processes for metallic silicon materials, solar-grade silicon materials, silicon wafers, cells and modules, utilization, recycling, and other interrelated processes. We found that the production and processing of silicon-to-solar-grade polysilicon feedstock were crucial stages that significantly affected the energy consumption and environment of P- and N-type PV modules in China. The high electricity consumption of this process, combined with the dominance of coal power in China's electricity structure, contributed to the substantial energy consumption and environmental impacts of the PV modules. Therefore, this stage is critical for the low-carbon and environmentally sustainable manufacturing of N-type PV modules in China. Carbon emissions for both the P-type and N-type PV modules were lower only during the cell production phase but higher during the other stages when compared to the P-type and N-type PV modules. The n-type bifacial PV modules yielded the highest return on investment in terms of energy. Different regions and installation types have a substantial impact on the carbon emissions of P-type and N-type PV modules. Projections indicate that the potential to lower carbon emissions from n-type PV modules will increase by 2060.

Machine Learning-Assisted Precision Manufacturing of Atom Qubits in Silicon.

Donor-based qubits in silicon, manufactured using scanning tunneling microscope (STM) lithography, provide a promising route to realizing full-scale quantum computing architectures. This is due to the precision of donor placement, long coherence times, and scalability of the silicon material platform. The properties of multiatom quantum dot qubits, however, depend on the exact number and location of the donor atoms within the quantum dots. In this work, we develop machine learning techniques that allow accurate and real-time prediction of the donor number at the qubit site during STM patterning. Machine learning image recognition is used to determine the probability distribution of donor numbers at the qubit site directly from STM images during device manufacturing. Models in excess of 90% accuracy are found to be consistently achieved by mitigating overfitting through reduced model complexity, image preprocessing, data augmentation, and examination of the intermediate layers of the convolutional neural networks. The results presented in this paper constitute an important milestone in automating the manufacture of atom-based qubits for computation and sensing applications.

Magnetic field and initial stress on a rotating photothermal semiconductor medium with ramp type heating and internal heat source

This manuscript addresses a significant research gap in the study by employing a mathematical model of photo thermoelastic wave propagation in a rotator semiconductor medium under the effect of a magnetic field and initial stress, as well as ramp-type heating. The considered model is formulated during the photothermal theory and in two-dimensional (2D) electronic-elastic deformation. The governing equations represent the interaction between the primary physical parameters throughout the process of photothermal transfer. Computational simulations are performed to determine the temperature, carrier density, displacement components, normal stress, and shear stress using the application of Lame’s potential and normal mode analysis. Numerical calculations are carried out and graphically displayed for an isotropic semiconductor like silicon (Si) material. Furthermore, comparisons are made with the previous results obtained by the others, as well as in the presence and absence of magnetic field, rotation, and initial stress. The obtained results illustrate that the rotation, initial stress, magnetic field, and ramp-type heating parameter all have significant effects. This investigation provides valuable insights into the synergistic dynamics among a magnetization constituent, semiconducture structures, and wave propagation, enabling advancements in nuclear reactors' construction, operation, electrical circuits, and solar cells.

Therapeutic Aspects of Lipofilling, Abdominoplasty in Combination with Body Liposuction and Bariatric Surgery

This review article is dedicated to the therapeutic aspects of various plastic surgery procedures. Nowadays, improving appearance and quality of life through plastic surgery is becoming increasingly popular. Managing patients after lipofilling and abdominoplasty combined with liposuction is an interdisciplinary challenge. Intraoperative risks in plastic surgery are associated with anesthesia and comorbidities. The immediate response of the cardiovascular and respiratory systems to the administration of anesthetic agents and the anesthesiologist's qualifications determines the immediate success of the operations. The duration of the surgery, volumetric disturbances, reduction of body surface area, and changes in metabolic and immunological status after mechanical impact on adipose tissue significantly alter the rate of compensatory-adaptive reactions of the body. In the long-term period after lipofilling, abdominoplasty, liposuction, and augmentation mammoplasty, systemic complications are often observed. These include insomnia, chronic kidney disease, protein-energy malnutrition, arthropathies, nonspecific interstitial lung lesions, unverified hepatitis, lupus-like syndrome, antibodies to transplanted fats and silicone materials, idiopathic limb edema, as well as autoinflammatory syndromes. The presented work also provides data on propofol infusion syndrome and the clinical-prognostic significance of vascular endothelial growth factor in plastic surgery. The authors’ team also presents their own clinical data on obesity and associated diseases. To maintain the aesthetic effect and prevent long-term complications after lipofilling, liposuction, augmentation mammoplasty, blepharoplasty, and rhinoplasty, it is recommended to follow a hypoallergenic and low-calorie diet for the next 3-6 months, avoid night work, excessive physical exertion, simultaneous intake of antibiotics and anti-inflammatory drugs, sun exposure, trips to mountainous areas, and long flights.

Comparative Assessment of the Adhesion Forces of Soft Silicone Materials to the Denture Base Material (PMMA) Conditioned with Sandblasting.

In patients undergoing surgery for oral cancer, soft support materials are used to minimise trauma to the soft tissues. Silicone-based liners are widely used in prosthetic dentistry. A prerequisite for long-term Adhesion of the liner to the denture base is largely dependent on the surface preparation of the denture material. The aim of the present study was to investigate whether surface preparation of the acrylic material by sandblasting increases the adhesion of the silicone support material to the acrylic denture plate. The study included adhesion testing of four silicone-based soft cushioning materials (Silagum Comfort, Elite Soft Re-lining, Ufi Gel SC, Mucopren Soft) on a total of 270 samples. Each material was tested on 15 samples. Three subgroups with different surfaces were separated: 1 raw-standard surface treatment with a cutter, and 2 sandblasted, with 100 and 350 µm alumina grain at 90°. The samples were subjected to seasoning: 24 h and six weeks. The adhesion force of silicone to acrylic was measured by performing a tensile test using a universal two-column testing machine. The highest bond strength was recorded for Silagum on the surface prepared using 100 µm abrasive and seasoned for 6 weeks (291.5 N). The smallest among the maximum forces was recorded for the Mucopren material (81.1 N). For the Mucopren system with a raw and sand-blasted surface (350 µm), the adhesion strength increased after six weeks. In contrast, the durability of the joint decreased for the 100 µm sandblasted surface. The Elite material exhibited similar values for maximum forces (271.8 N) and minimum forces (21.1 N). The highest strength (226.1 N) was recorded for the sample from the group prepared with 350 µm abrasive and seasoned for 24 h. The lowest value (72.6 N) occurred for the sample from the group with 100 µm abrasive and seasoned for 6 weeks. Sandblasting of acrylic plastic improves adhesion to selected relining silicones. 2. The size of the abrasive employed has an impact on the adhesion between the acrylic plastic and the bedding silicone. 3. In the case of some relining systems (Mucopren), an increase in roughness through sandblasting has the effect of reducing the durability of the bonded joint.

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

COMPUTER PRODUCTION OF FACIAL EPITHETS

BACKGROUND: The issue of rehabilitation of patients with facial defects is extremely acute. In addition to the annual increase in the number of patients with cancer of the maxillofacial region, in recent years the number of people with shrapnel and gunshot wounds to the face has increased as a result of local wars and conflicts. Traditional methods of orthopedic rehabilitation of patients and the manufacture of facial epitheses are quite a complex and lengthy process. In the postoperative period, there is a sharp decrease in the quality of life of this category of patients, a violation of the basic body functions necessary for vital activity and poor social adaptation. Direct prosthetics of the face in the postoperative period was impossible due to the lack of necessary digital modeling technologies and structural materials for additive or subtractive production methods. The production of temporary or permanent facial epitheses using digital technologies is an urgent task that can improve the social and functional living conditions of patients. AIMS: Development of 3D modeling technology for additive manufacturing of facial epithets. METHODS: To achieve this goal, the first task was to develop specialized three-dimensional software for modeling defects in the facial area. The functionality of the program should allow you to virtually simulate the missing parts of the face (ear, eye, nose, orbit). To create a digital platform together with IT specialists, it was decided to use the following programming languages: C++ - Writing the software core, writing UI/UX interaction modules, interacting with the Windows operating system; C# - Complex assembly of the entire project; Python is an automated assembly of virtual library modules; OpenGL HSLS is a shader language for graphical visualization of objects; C is the creation of functions for interacting with shaders that require high speed. RESULTS: A specialized computer program has been developed for 3D modeling of prostheses in patients with defects in the middle zone of the face using combined facial scanning and computed tomography data (Computer program. Apresyan S.V., Stepanov A.G. "A program for 3D modeling of facial epitheses. Registration number (certificate) 2023663490, Registration date: 07/04/2023). Instead of obtaining analog impressions with plaster or silicone material, the developed technology uses a special 3D facial scanner, which greatly eases the suffering of patients. A virtual three-dimensional database of ears, noses, orbits, and zygomatic bones of patients of various ages and gender is integrated into the developed program. This allows the specialist to select the most adaptive part of the face to make up for the defect. Built-in modeling tools allow you to personalize a 3D model of a part of the face, based on the structural features of the maxillofacial region of a person. The finished three-dimensional model of a part of the face can be exported in various formats CONCLUSIONS: The developed 3D program for modeling defects allows to avoid invasive prosthetics approaches, to coordinate the shape of future structures with the patient. The built-in library of structures with a database provides remote manufacturing of the prosthesis without the presence of the patient, in case of a need to replace it. Among the undeniable advantages of the technology, it is important to include the fact that prostheses can be made directly on the day of surgery to remove part of the face, completely restoring lost functions and providing rapid social adaptation.

Mitigation of Volumetric Expansion in Silicon Anodes via Engineered Porosity: Electrochemical Performances and Stress Distribution Implication

To overcome the significant volume expansion issue encountered by traditional silicon anodes in lithium‐ion batteries, this study employs chemical etching techniques to treat aluminum–silicon alloys of various ratios, successfully preparing three types of porous silicon electrode materials with different pore structures. Through a series of electrochemical tests, this article investigates the role of porous silicon structures in improving electrode performance. The results demonstrate that the porous silicon anodes exhibit superior cycle stability and rate capability compared to traditional solid silicon anodes. This confirms the effectiveness of the porous structure in mitigating the significant volume expansion during the charge and discharge process of silicon materials and in preventing premature electrode failure, thereby significantly enhancing the electrode's cycle life. Remarkably, the porous silicon with a high porosity rate shows exceptionally outstanding performance. Additionally, using computer simulations, this study also models the impact of changes in pore size within the porous silicon material at different states of charge and discharge on the stress distribution at the particle center and surface. These experimental and simulation results jointly provide strong empirical evidence for applying porous silicon materials as high‐performance anode materials for lithium‐ion batteries and offer essential guidance for future stress analysis and electrode design of porous silicon electrode materials.

A deformation mismatch strategy enables over 120% stretchability of encapsulated serpentine silicon strips for stretchable electronics

AbstractIt is significant to develop stretchable electronics based on silicon materials for practical applications. Although various stretchable silicon structures have been reported, electronic systems based on them exhibit limited stretchability due to the constraints between them and polymer substrates. Here, an innovative strategy of deformation mismatch is proposed to break the constraints between silicon structures and polymers and effectively reduce the strain concentration in silicon structures. As a result, encapsulated serpentine silicon strips (S‐Si strips) achieve unprecedented stretchability, exceeding 120%. The encapsulated S‐Si strip also exhibits remarkable mechanical stability and durability, enduring 100 000 cycles of 100% stretch without fracture. The effect of key parameters, including the central angle, thickness, and width of the S‐Si strip, on the deformation mismatch is revealed through combing experiments and theoretical analysis, which will guide the rational implementation of the deformation mismatch strategy. Electrical testing showcases the strain‐insensitive nature and good electrical stability of encapsulated S‐Si strips, benefiting practical applications. This work provides a new paradigm of silicon materials with excellent stretchability and will facilitate the development of stretchable electronics.

Exploring the effect of facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics

Photosensitive glass-ceramics exhibit significant potential to replace silicon materials in the microfabrication of micro-electro-mechanical-system (MEMS) devices. However, they are constrained by the limitations of a conventional 320-nm photolithography process. Therefore, developing an ideal industrial i-line (365 nm) photolithography for Li2O–Al2O3–SiO2 photosensitive glass-ceramics is urgently needed. This study initially explores the impact of a facile i-line photolithography on the structure and physicochemical properties of photosensitive glass ceramics. We experimentally showcase a direct, scalable, and straightforward i-line photolithography technique for Li2O–Al2O3–SiO2 photosensitive glass ceramics. Our research concentrates on how the exposure time affects the properties of Li2O–Al2O3–SiO2 photosensitive glass ceramics, particularly regarding nucleation and crystallization. This is achieved by adjusting the exposure time parameter and utilizing XRD, etching experiments, SEM, TEM, and other tests under a i-line light source. By optimizing the exposure process parameters, we also modify the annealing process parameters affecting the crystallization of lithium metasilicate in the exposed areas. Under a treatment process involving an exposure time of 20 min, a nucleation temperature of 500 °C, a crystallization temperature of 630 °C, and a nucleation/crystallization duration of 2 h, the sample achieves the highest crystal quantity and the optimal thickness-etching rate ratio.

Variability in Design and Materials of Vaginal Stent or Moulds for Vaginal Agenesis - A Systematic Review

Background: Vaginal stents play a crucial role in both non-surgical and surgical management of vaginal agenesis. Different types of stents with variable designs and materials have been described in the literature. However, a summary of various stents described in the existing data and their outcome measures needs to be studied. Objectives: The objective of the study was to identify and summarise different types of vaginal stents used for patients with vaginal agenesis, to identify the design and material of different vaginal stents and to assess the benefit of using that specific vaginal stent. Materials and Methods: The literature search was conducted in the PubMed database for articles from 2000 to 2024 in the English language. An exploration of grey literature was also included through Google Scholar. The articles were included only if they clearly described vaginal stent, its material, design and advantage of using that particular stent, and any study not directly related to the research question or in which vaginal stent was used for cases other than vaginal agenesis/Mayer–Rokitansky–Kuster–Hauser syndrome/Mullerian aplasia or agenesis were not included in this study. Risk of bias assessment was done using an eight-item tool that included domains of selection, ascertainment, causality and reporting. Results: A total of 133 abstracts appeared in PubMed, of which, 26 titles/abstracts were related to the research question. Based on inclusion and exclusion criteria, seventeen articles were selected for the review. A total of 905 articles were identified from Google Scholar, of which, 7 were chosen to be included. The literature reports the usage of variable vaginal stents which can be hard, soft, solid or hollow with the option of customisation available. Interpretation: Based on the results of this review, soft stents are better than rigid stents due to increased patient compliance, a critical factor contributing to the success of the treatment. The resilient nature, comfort and lightweight of the silicone material are more suitable than commonly used acrylic material. However, the choice in a particular case may vary. Limitations: The majority of articles included in this review were case reports. As the duration and frequency of usage of stents affect the outcome, studies need to be done to evaluate the effectiveness of different types of stents to come to identify the best design and material for vaginal stents. PROSPERO Registration: CRD42024554676.

Growth rate of AL2O3 Thin Film by Liquid Phase Deposition as an Anti-reflection Coating Layer on Crystalline Silicon for Solar Cell Applications

The fabrication of photovoltaic (PV) device requires that surface reflectance of solar cells has to be minimized to achieve higher photo-conversion efficiency (PCE). Antireflection coating layer is deposited on the surface of a p-type crystalline silicon material to reduce the surface reflections of solar radiation and increase its absorption for efficient solar cell application. In this work, aluminum oxide thin film by liquid phase deposition (LPD-Al2O­3) is synthesized from combined solution of aluminum sulfate octadecahydrate (Al2(SO4)3·18H2­O) and sodium carbonate (NaHCO3) with pH of 3.1. Some samples of p-type (100) crystalline silicon (c-Si) wafers of resistivity 1 – 10 mΩ were immersed inside the growth liquid of LPD-Al2O­3 thin film for 1hr – 2.5 hours. This is followed by annealing the samples at a temperature of 450oC, the deposition rate is faster in the range 1 – 1.5 hours is about 35nm/hr. As the growth time increases, the growth rate of the film decreases and remains nearly constant at about 10 nm/hour at 1 – 2 hours. When the growth time exceeds 2 hours, the film thickness remains unchanged showing that the liquid has lost in growth ability. The weighted average reflection (%) of planar c-Si is reduced from 44.9 % to 29.6 % after deposition of the LPD-Al2O­3 for 2.5 hours growth time, indicating a 34.1 % reduction in reflection within wavelength region of 300–1100 nm. While the root means square (RMS) surface roughness of 36.5 nm was also recorded at the highest growth time of 2.5 hours. This shows the effect of thicker LPD-Al2O­3 thin film layer increases the anti-reflecting coating property of the material.

Growth rate of AL2O3 Thin Film by Liquid Phase Deposition as an Anti-reflection Coating Layer on Crystalline Silicon for Solar Cell Applications

The fabrication of photovoltaic (PV) device requires that surface reflectance of solar cells has to be minimized to achieve higher photo-conversion efficiency (PCE). Antireflection coating layer is deposited on the surface of a p-type crystalline silicon material to reduce the surface reflections of solar radiation and increase its absorption for efficient solar cell application. In this work, aluminum oxide thin film by liquid phase deposition (LPD-Al2O­3) is synthesized from combined solution of aluminum sulfate octadecahydrate (Al2(SO4)3·18H2­O) and sodium carbonate (NaHCO3) with pH of 3.1. Some samples of p-type (100) crystalline silicon (c-Si) wafers of resistivity 1 – 10 mΩ were immersed inside the growth liquid of LPD-Al2O­3 thin film for 1hr – 2.5 hours. This is followed by annealing the samples at a temperature of 450oC, the deposition rate is faster in the range 1 – 1.5 hours is about 35nm/hr. As the growth time increases, the growth rate of the film decreases and remains nearly constant at about 10 nm/hour at 1 – 2 hours. When the growth time exceeds 2 hours, the film thickness remains unchanged showing that the liquid has lost in growth ability. The weighted average reflection (%) of planar c-Si is reduced from 44.9 % to 29.6 % after deposition of the LPD-Al2O­3 for 2.5 hours growth time, indicating a 34.1 % reduction in reflection within wavelength region of 300–1100 nm. While the root means square (RMS) surface roughness of 36.5 nm was also recorded at the highest growth time of 2.5 hours. This shows the effect of thicker LPD-Al2O­3 thin film layer increases the anti-reflecting coating property of the material.