SiH4 Flow Rate Research Articles

High‐Quality Nonpolar a‐Plane AlGaN Film Grown on Si‐Doped AlN Template by Metal Organic Chemical Vapor Deposition

High crystalline quality and flat a‐plane aluminum gallium nitride (AlGaN) films are obtained on Si‐doped AlN templates with a moderate silane (SiH4) flow rate by metal‐organic chemical vapor deposition (MOCVD). The effects of the SiH4 flow rate on the surface morphology, crystalline quality, stress state, and optical property of a‐plane AlN templates and AlGaN films are comprehensively investigated. As the SiH4 flow rate increases from 0 to 7.0 nmol min−1, the full width at half maximum of X‐ray rocking curve values along [0001]/[1–100] directions for the AlGaN films are monotonically reduced to 1124/1143 arcsec. Meanwhile, the surface root mean square roughness value is decreased to 0.88 nm. These achievements are attributed to the suppression of the anisotropy degrees and in‐plane stress of AlN templates. In addition, an excess SiH4 flow rate leads to deteriorated surface morphologies and increased basal plane stacking fault (BPSF) densities for both AlN and AlGaN films. This work suggests that doping AlN layers with an appropriate SiH4 flow rate is a promising route to obtain high‐quality a‐plane AlGaN films for efficient nonpolar deep ultraviolet (DUV) devices.

Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures

The study of the conduction and light emission mechanisms of PIN diodes based on amorphous silicon-carbide (a-Si1-xCx:H) thin film and crystalline silicon (c-Si) substrates is reported in this work. Using the same low-temperature process (200 °C), PP+IN and PIN+N structures were fabricated on p-type and n-type silicon (Si) substrates, respectively. The plasma enhanced chemical vapor deposition (PECVD) technique was employed for the active layers deposition where two different CH4/SiH4 flow rates ratios of 30 sccm/6 sccm and 30 sccm/1 sccm were used. All structures show red-orange light emission in forward bias (FB). The structures with the active layer deposited with a lower SiH4 flow rate, display light emission with a higher intensity at a lower voltage bias.In addition, we related the current-voltage measurements with different conduction models and the dominant charge transport mechanisms in the PIN structures were proposed. The highest Si content structures were related to Fowler-Nordheim (F-N) tunneling, because of its active layer with lower barrier height. On the other hand, the lowest Si content structures were associated with the Poole-Frenkel (P-F) emission, due to a higher density of defects in localized tail states. The results showed the same conduction and emission mechanisms for the PP+IN and PIN+N diodes with the same active layer, regardless of the conduction type of substrate, proving that it is feasible to use the same process for developing light emission devices on p-type and n-type Si substrates.

Tribology dependence on both structures of bulk a-C:H:Si films and transfer layer via adjustable Si content

Si doped hydrogenated amorphous carbon (a-C:H:Si) films were fabricated in mixed atmosphere of SiH4 and Ar by magnetron sputtering methods, with different SiH4 flow rates. The microstructures and tribological performances were measured by Atomic Force Microscopy (AFM), Scanning Electron Microscope (SEM), X-ray Photoelectron Spectroscopy (XPS), Raman Spectroscopy and Tribo-tests. The results showed that the as-fabricated a-C:H:Si films exhibited good tribological performances with low friction and wear. The -OH termination which was deduced by SiO structure inside the a-C:H:Si film reacted with water molecules in atmosphere could passivate the film and counterpart surface, leading to the low friction of a-C:H:Si film. The wear rate increased with the increase of SiH4 gas flow rate, which could be attributed to the formation and increase of SiC phase with high hardness. The SiC phase enhanced the three-body abrasion between the contact surfaces, which increase the wear of the a-C:H:Si film at high SiH4 flow rate.

Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method

This study modeled deposition processes using statistical ensemble and feature-scale voxel methods to predict the coverage and film properties on a large-scale pattern for the first time. Certain new concepts, such as the use of probabilities to express physical and chemical phenomena occurring on the surface, interaction among voxels, and super particles for fast calculations, were introduced. Further, the model was used to analyze the experimental characteristic variation between the morphology and film density of SiN in low-temperature plasma-enhanced chemical vapor deposition using a SiH4/NH3/N2 gas mixture with different SiH4 flow rates, which has not been found in SiO2 films. The simulation results demonstrated the effect of the precursor mass in the gas phase on surface migration and morphology formation. In addition, a short residence time was required to prevent the generation of large and heavy precursors to realize good SiN coverage and film properties at a low temperature.

A Comparative Study on Self‐Aligned Top‐Gate Thin‐Film Transistors with Silicon Nitride as the Interlayer

Thin-film transistors (TFTs) with self-aligned top-gate structure are fabricated, in which the source/drain region is pretreated to be highly conductive during the deposition of silicon nitride as the interlayer. Without deteriorating the properties of the device's channel layer, the basic performance of TFTs can be simply controlled by altering the SiH4 flow rate during the deposition of silicon nitride film. Furthermore, the diffusion of hydrogen dissociated from SiH4 precursor, which can passivate the electron traps at the interface between the channel and dielectric layer or in the bulk of the dielectric layer, can significantly improve the positive bias temperature stress stability. The charge trapping mechanism is verified using the stretched-exponential model, and the rising values of the fitting parameters (ΔVth0 and τ) show that the TFTs stability improves as the flow rate of SiH4 rises. This approach can reduce the cost and simplify the manufacturing of thin-film transistors.

Ultrasensitive UV-C detection based on MOCVD-grown highly crystalline ultrawide bandgap orthorhombic κ-Ga2O3

Orthorhombic κ-Ga2O3, as one of the Ga2O3 polymorphs, is considered a promising as ultrawide bandgap material for extreme environment devices. It is considered more superior than the conventional group III-V compound semiconductors and silicon carbides in extreme environments demanding material/device characteristics of high-voltage, high-temperature, high-pressure, high-impact, and high-radiation. In this study, we demonstrate ultrasensitive ultraviolet-C (UV-C) detection using Si-doped orthorhombic κ-Ga2O3 photodetectors. A 150 nm thick κ-Ga2O3 film was grown on a 2-inch diameter sapphire (α–Al2O3) wafer via metal organic chemical vapor deposition (MOCVD) method. The crystallinity of orthorhombic κ-Ga2O3 film was investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The ultrawide bandgap of approximately 4.9 eV was confirmed by UV transmittance measurement. For UV-C detection analysis, a planar device with a channel length of 20 μm was fabricated using Au/Ti metal contacts on the orthorhombic κ-Ga2O3 film. The device doped under 15 sccm SiH4 flow rate showed ultrahigh photoresponse of ∼72.1 A/W, Ion/Ioff of ∼14, and decent rise (∼0.35 s) and decay (∼1.79 s). Our results will contribute to the understanding on a new material phase of κ-Ga2O3, as well as on developing optoelectronics devices with high radiation hardness suitable for operation in extreme environments.

Improved interface and dark current properties of InGaAs photodiodes by high-density N2 plasma and stoichiometric Si3N4 passivation

The interface and dark current properties of mesa-structure In0.83Ga0.17As photodiodes with improved passivation processes are investigated. Inductively coupled plasma chemical vapor deposition (ICPCVD) is used to continuously perform high-density N2 plasma treatment of InGaAs epitaxial material and then SiNx passivation film deposition. The bonding efficiency between Si and N can be effectively improved when close-to-stoichiometric SiNx films are synthesized by precisely controlling the N2 and SiH4 flow rates. Metal-insulator-semiconductor (MIS) capacitors are fabricated to study the interface properties, and C-V analysis shows that the interface state density significantly decreases to 5.3 × 1012 cm−2eV−1. Then, the process is applied to mesa-structure In0.83Ga0.17As photodiodes, and the results show a low dark current density (13 nA/cm2, @ 190 K) and negligible surface current (@ room temperature), indicating the ideal passivation effect. The method of increasing the deposition temperature to promote chemical bonding of SiNx films is studied, and both the interface and dark current properties can be improved. Our work is of important significance to the development of low-noise and large-format InGaAs arrays.

Influence of silane flow rate on the structural and optical properties of GaN nanowires with multiple-quantum-shells

In this study, we discuss the influence of SiH4 flow rates on the structural and optical properties of GaN nanowires (NWs) with multiple-quantum-shells (MQSs). To this end, we prepared two n-GaN core NW samples with different SiH4 flow rates. Subsequently, MQS active layers of the same structure were grown on each n-GaN core NW under identical growth conditions. The samples were characterized by scanning electron microscopy, scanning transmission electron microscopy, energy-dispersive X-ray, and cathodoluminescence (CL) mapping. From the experimental results, we ascertained that a Si-rich layer was created between the sidewall of the NWs and MQSs, in which the number of Si atoms was mainly determined by the SiH4 flow rate. These Si atoms diffused into the MQSs during the growth, and significantly impacted the structural and optical properties, such as the shape and crystalline quality of the MQSs and NWs, and the CL intensity of the MQSs. On the basis of experimental results, we conclude that the SiH4 flow rate during the NW growth plays a critical role in the performance of an MQS-based optoelectronic semiconductor device.

Improving Transport Properties of GaN-Based HEMT on Si (111) by Controlling SiH4 Flow Rate of the SiNx Nano-Mask

The AlGaN/AlN/GaN high electron mobility transistor structures were grown on a Si (111) substrate by metalorganic chemical vapor deposition in combination with the insertion of a SiNx nano-mask into the low-temperature GaN buffer layer. Herein, the impact of SiH4 flow rate on two-dimensional electron gas (2DEG) properties was comprehensively investigated, where an increase in SiH4 flow rate resulted in a decrease in edge-type threading dislocation density during coalescence process and an improvement of 2DEG electronic properties. The study also reveals that controlling the SiH4 flow rate of the SiNx nano-mask grown at low temperatures in a short time is an effective strategy to overcome the surface desorption issue that causes surface roughness degradation. The highest electron mobility of 1970 cm2/V·s and sheet carrier concentration of 6.42 × 1012 cm−2 can be achieved via an optimized SiH4 flow rate of 50 sccm.

Pulsed very high-frequency plasma-enhanced chemical vapor deposition of silicon films for low-temperature (120 °C) thin film transistors

With the aim of improving silicon (Si) film quality deposited by atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition at a low substrate temperature of 120 °C, we examine the difference between continuous wave and pulsed plasmas for deposition characteristics depending on H2 and SiH4 flow rates and inpur VHF power. A specifically designed parallel-plate-type electrode system is used to generate the AP plasma, which is excited by 150 MHz very high-frequency (VHF) electric power. Hydrogen and monosilane diluted with helium are used as the process gases. The electrode system enables us to form turbulence-free one-dimensional gas flow in the plasma zone, thereby ensuring a deposition process without contamination of the substrate surface with dust particles. The electrical property of the deposited Si layers was evaluated by fabricating bottom-gate thin film transistors (TFTs). The performance of the bottom-gate TFTs revealed that the a-Si TFTs, i.e. those channel layers prepared with a pulse duty cycle of 10%, exhibit reasonably high field effect mobilities of around 1 cm2 · V–1 · s–1, suggesting that the pulse modulation of input VHF power is highly effective in achieving a plasma chemistry suitable for high-quality Si growths at low temperatures.

Properties of Si-doped a-plane AlGaN layers

The non-polar a-plane (112¯0) n-type AlGaN epi-layers with high electron concentration were successfully grown on r-plane (11¯02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction, room temperature photoluminescence spectrum, and Hall effect measurement were used to examine the influence of Si-doping on the crystalline quality, and the optical and electrical characteristics of the non-polar a-plane n-AlGaN epi-layer, respectively. The characterization results indicate that the electron concentration (EC), the electron mobility, and the crystalline quality for the non-polar a-plane n-AlGaN epi-layers could be improved significantly by optimizing the epitaxial growth conditions, especially the mole flow rate of SiH4 in the Si-doping process. In fact, at a SiH4 mole flow rate of 10.2 nmol/min, an EC as high as 1.25 × 1018 cm−3 and an electron mobility up to 3.86 cm2/V were achieved with the non-polar n-AlGaN epi-layer sample with the Al content of 41%.

Selective Growth and Contact Gap-Fill of Low Resistivity Si via Microwave Plasma-Enhanced CVD.

Low resistivity polycrystalline Si could be selectively grown in the deep (~200 nm) and narrow patterns (~20 nm) of 20 nm pitch design rule DRAM (Dynamic Random Access Memory) by microwave plasma-enhanced chemical vapor deposition (MW-CVD). We were able to achieve the high phosphorus (CVD gap-fill in a large electrical contact area which does is affected by line pitch size) doping concentration (>2.5 × 1021 cm−3) and, thus, a low resistivity by adjusting source gas (SiH4, H2, PH3) decomposition through MW-CVD with a showerhead controlling the decomposition of source gases by using two different gas injection paths. In this study, a selective growth mechanism was applied by using the deposition/etch cyclic process to achieve the bottom–up process in the L-shaped contact, using H2 plasma that simultaneously promoted the deposition and the etch processes. Additionally, the cyclic selective growth technique was set up by controlling the SiH4 flow rate. The bottom-up process resulted in a uniform doping distribution, as well as an excellent filling capacity without seam and center void formation. Thus, low contact resistivity and higher transistor on-current could be achieved at a high and uniform phosphorus (P)-concentration. Compared to the conventional thermal, this method is expected to be a strong candidate for the complicated deep and narrow contact process.

Poly-Si/SiOx/c-Si passivating contact with 738 mV implied open circuit voltage fabricated by hot-wire chemical vapor deposition

Hot-wire chemical vapor deposition (HWCVD) was utilized to develop a fast and high quality a-Si:H thin film fabrication method for poly-Si/SiOx carrier selective passivating contacts targeting at n-type passivated emitter rear totally diffused crystalline silicon solar cells. The microstructure and hydrogen content of the a-Si:H thin films were analyzed by Fourier-transform infrared spectroscopy in order to understand the influence of film properties on passivation and conductivity. Dense layers were found to be beneficial for good passivation. On the other hand, blistering appeared as a-Si:H layers became more and more dense. However, by adjusting the SiH4 flow rate and the substrate heater temperature, blistering of a-Si:H could be avoided. A suitable process window was found and firing-stable implied open circuit voltage (iVoc) of up to 738 mV was achieved. In addition to high iVoc, a low contact resistivity of 0.034 Ω cm2 was also achieved. The deposition rate of the a-Si:H layers was 7 Å/s by using HWCVD, which is one order of magnitude higher than the deposition rate reported using other deposition methods.

Effect of SiH<sub>4 </sub>Flow Rates on the Structures and Properties of Si-Rich Silicon Nitride Films Prepared by Hot Wire Chemical Vapor Deposition

Silicon-rich silicon nitride thin films were deposited on the P type (100) of silicon and Corning7059 glass by hot-wire chemical vapor deposition method using SiH4 and NH3 as reaction gas source. The effects of SiH4 flow rate on the structures and optical properties of the thin films were studied under optimizing other deposition parameters. The structures, band gap width and surface morphology of the thin films were characterized by Fourier transform infrared absorption spectroscopy (FTIR), ultraviolet-visible (UV-VIS) light transmittance spectra and scanning electron microscope (SEM), respectively. The experiment results show that, with increasing of the SiH4 flow rate, the content of N and Si atoms in the thin films increases, and the Si-N bond density increases gradually, and the optical band gap of the films shows a trend of increasing. When the silane flow rate is less than 0.9sccm, there is no Si-H bond stretching vibration absorption peak, and silicon atoms mainly bond with nitrogen atoms. As the SiH4 flow rate decreases, silicon clusters embedded in silicon nitride matrix gradually become smaller. When SiH4 flow rate is 0.4sccm, we prepared the silicon cluster nanoparticles with an average diameter of about 50nm embedded in silicon nitride thin films matrix. Therefore, properly reduction of the SiH4 flow rate is favorable for preparing the smaller silicon cluster nanoparticles in silicon rich silicon nitride thin films. The results lay the foundation for the preparation of silicon quantum dots thin film materials.

The changing of silicon suboxide film thickness as a result of high temperature annealing

The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.

Formation of Epitaxial Heavy-doped Silicon Films by PECVD Method

Plasma-enhanced CVD (PECVD) epitaxy at 200 °C was used to deposit heavy doped n-type silicon films. Post-annealing by rapid thermal processing was applied to improve the properties of the epitaxial layer. By analyzing the Raman spectra and the imaginary part of the dielectric constant spectra of the samples, it was found that high-quality heavy-doped epitaxial n-type silicon layer can be obtained by optimizing the parameters of the PECVD depositing process. Reducing the electrodes distance of the PECVD had a great effect on the crystallzation of the epitaxialed n-type silicon films. Sillicon films with high-crystallization were obtained with the electrodes distance of 18 mm. Post-annealing process can improve the crystallization and reduce the resistance of the epitaxial films. In our research, it was found that the sheet resistance (R□) of the post-annealed films with thickness of about 50 nm has a simple relationship with RPH3/SiH4 (ratio of the flow rate of PH3 and SiH4) of the PECVD processing: R□=-184-125 lg(RPH3/SiH4). In the end, high-quality epitaxial n-type silicon film was obtained with R□ of 15 Ω/□ and thickness of ~50 nm.

Effect of Pressure and Flow Rates on Polymorphous Silicon‐Germanium (pm‐SixGe1−x:H) Thin Films for Infrared Detection Applications

In this paper, the characterization and optimization of polymorphous silicon‐germanium (pm‐SixGe1−x:H) thin films prepared by plasma‐enhanced chemical vapor deposition (PECVD) are reported in order to use them as thermo‐sensing films on infrared detectors. Two series of pm‐SixGe1−x:H thin films are fabricated and characterized. In the first series, the pressure is varied in a wide range (600–2000 mTorr) using the same SiH4 and GeH4 flow rates, while in the second series the flow rate of GeH4 is varied in the range of R = 10–90%. Fourier transform infrared spectroscopy (FTIR) confirms the large incorporation of germanium (Ge) in the solid phase. The aim is to optimize the films in terms of the temperature coefficient of resistance TCR (% K−1), room temperature conductivity, and noise. A significant variation in the TCR values from 3.1 to 9.9% K−1 and in the room temperature conductivity by about six orders of magnitude is observed. Finally, noise spectral density characterization is performed to evaluate the application of the pm‐SixGe1−x:H films as thermo‐sensing elements in high performance infrared detectors (microbolometers).

Surface morphology evolution and optoelectronic properties of heteroepitaxial Si-doped β-Ga2O3 thin films grown by metal-organic chemical vapor deposition

Heteroepitaxial growth of conductive Si-doped β-Ga2O3 films on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD) was successfully performed. The effect of Si content on the structural, morphological, electrical and optical properties of Si-doped β-Ga2O3 films was investigated in detail. Distinctive surface morphology evolution of films depending on Si content was observed and presented. The Si-doped β-Ga2O3 films exhibited high transmittance in the ultraviolet-visible regions. The temperature-dependent PL was carried out especially to discuss the photoluminescence properties of Si-doped β-Ga2O3 films. More importantly, the results suggested that the conductivity of heteroepitaxial Si-doped β-Ga2O3 films by MOCVD could be realized and controlled by adjusting the Si content. The minimum resistivity of 1.79×10−1Ω·cm was obtained for the films grown under the SiH4 flow rate of 0.08 sccm.

Temporal stability of a-Si:H and a-SiNx:H on crystalline silicon wafers

The temporal stability of single layer thin films of hydrogenated amorphous silicon (a-Si:H) and silicon nitride (a-SiNx:H) passivated crystalline silicon wafers have been investigated over 18 months. The thin films were deposited at low temperature with plasma-enhanced chemical vapor deposition (PECVD) onto different substrates, including float zone (FZ) p-type and Czochralski (CZ) n-type silicon. For a-SiNx:H, we investigate the temporal stability dependence on the flow rate of silane (SiH4) used during deposition. This was varied from 13 sccm to 50 sccm. The thickness of the a-Si:H and a-SiNx:H thin films was characterized by spectroscopic ellipsometry (SE), whereas the minority carrier effective lifetime (τeff) and the uniformity of the wafer were measured through carrier density imaging (CDI). We found that for both p-type FZ and n-type CZ silicon substrates, the a-Si:H passivation performance degrades after 150 h and reached a minimum value around 350 h, whereafter the lifetime recovered to a level of 1.1 ms (-16% compare to the initial state) and 1.6 ms (-4%), respectively. Similar trends were also seen on a-SiNx:H passivated samples, but the lowest value was reached after around 550 h. For both p- and n-type substrates passivated by a-SiNx:H passivation, as the flow rate of SiH4 increased, the temporal stability of passivated samples enhanced.

Synthesis of Nanoparticles Using Low Temperature Plasmas and Its Application to Solar Cells and Tracers in Living Body

Plasma is a promising method for synthesis of nanoparticles which are drawn much attention for opt-electric and medical applications such as solar cells and drug delivery systems. The method can control agglomeration of nanoparticles by utilizing their charge and can produce high purity nanoparticles. Wide variety of plasmas have been developed for synthesizing nanoparticles, allowing us to produce them of many kinds of materials and with a high yield. So far, we have employed three types of plasmas: multi-hollow discharge reactive plasmas for Si nanoparticles, high pressure rf sputtering for Ge ones, and plasma in water for In ones. We have firstly succeeded in demonstrating multiple exciton generation in Si and Ge nanoparticles to realize the third generation solar cells. Using In nanoparticles, we have realized high sensitive tracers for understanding nanoparticle kinetics in living body. For the multi-hollow discharge reactive plasma [1, 2], discharges were sustained in 8 holes of 5 mm in diameter and 7 mm in length. Nanoparticles were nucleated and grow in the H2+SiH4 discharges and they were transported to the downstream region by gas flow. The discharge frequency and power were 60 MHz and 180 W. The crystallinity and size of Si nanoparticles were controlled by H2 dilution ratio and working pressure [3, 4]. We found crystalline Si nanoparticles can be formed at high H2 dilution ratio and larger size of them are produced for higher pressure. Crystalline Si nanoparticles of 4 nm in size were fabricated under SiH4 and H2 gas flow rate of 2 and 448 sccm, respectively, and pressure of 266 Pa. They were collected by stainless mesh grids located at the downstream region. Transparent conductive oxide/Si nanoparticles/Al structured Schottky cells were employed for characterization of quantum effects. Carrier generation evaluation showed quantum efficiency of the cells show 100 % or more for incident photon energy above two times larger than the bandgap energy of Si nanoparticles. Consequently, multiple exciton generation by synthesized Si nanoparticles was firstly demonstrated [4]. Ge nanoparticles have more outstanding quantum confinement effects than Si nanoparticles due to the larger excitonic Bohr radius of 24.3 nm for Ge nanoparticle than 4.9 nm for Si ones. Ge is also known to exhibit larger absorption coefficient of infrared light than Si. We have fabricated Ge nanoparticle composite films using a high pressure rf sputtering method [5]. X-ray diffraction (XRD) and Raman spectra of the films showed the films with high crystallinity of 0.8. Fourier transform infrared measurements revealed Ge-H and Ge-H2 stretching bonds in the films. These results suggest the crystalline Ge nanoparticles of 6 nm in size are covered by hydrogenated amorphous Ge. We fabricated Ge nanoparticles solar cells in the TiO2/Ge/polysulfide electrolyte system. We found that the incident photo-to-current conversion efficiency increases with decreasing the wavelength, and it reaches 10 % at 400 nm [6]. The result suggests that excitons generated in Ge nanoparticles were separated into electrons and holes, and such carriers successfully extracted to the outer circuit. For medical applications of nanoparticles, their toxic effects are frequently pointed out. We have employed indium-contained nanoparticles for studying kinetics of nanoparticles in the living body because no In compound exists in living body. For In nanoparticle synthesis, In rod and plate electrodes were immersed into pure water. Discharges were generated by applying pulsed voltage between the electrodes. The discharge voltage and frequency was 9.2 kV and 10 kHz, respectively. The size of primary and secondary nanoparticles was 7 nm and 315 nm, respectively. The yield was 42 mg/min. Energy dispersive X-ray spectroscopy and XRD measurements showed that indium crystalline and indium hydroxide crystalline particles were generated with the mass ratio of 8:2. Preliminary subcutaneous administration of nanoparticles to mice shows that indium is transported from subcutaneous to blood. Comparing with In-contained nanoparticles of 150 nm in primary particle size, nanoparticles for smaller primary particle size indicated more prompt transportation. These results show that synthesized indium-containing nanoparticles are useful for analyzing kinetics of nanoparticles in living body [7]. In summary, plasma expands the capability of the nanoparticle synthesis towards opt-electronics and life science.[1] T. Kakeya, et al., The Solid Films 506-507, (2006)288.[2] G. Uchida et al., Thin Solid Films 544 (2013) 93.[3] H. Seo, et al., Electrochemi. Acta. 87 (2013) 213.[4] H. Seo, et al., Sci. Adv. Mater. 8 (2016) 636.[5] D. Ichida, et al., J. Phys. Conf. Ser. 518 (2014) 012002.[6] M. Shiratani et al., Materials Science Forum 783-786 (2014) 2022.[7] T. Amano et al., J. Nanosci. Nanotechnol. 15 (2015) 9298.