Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures

Abstract

The study of the conduction and light emission mechanisms of PIN diodes based on amorphous silicon-carbide (a-Si1-xCx:H) thin film and crystalline silicon (c-Si) substrates is reported in this work. Using the same low-temperature process (200 °C), PP+IN and PIN+N structures were fabricated on p-type and n-type silicon (Si) substrates, respectively. The plasma enhanced chemical vapor deposition (PECVD) technique was employed for the active layers deposition where two different CH4/SiH4 flow rates ratios of 30 sccm/6 sccm and 30 sccm/1 sccm were used. All structures show red-orange light emission in forward bias (FB). The structures with the active layer deposited with a lower SiH4 flow rate, display light emission with a higher intensity at a lower voltage bias.In addition, we related the current-voltage measurements with different conduction models and the dominant charge transport mechanisms in the PIN structures were proposed. The highest Si content structures were related to Fowler-Nordheim (F-N) tunneling, because of its active layer with lower barrier height. On the other hand, the lowest Si content structures were associated with the Poole-Frenkel (P-F) emission, due to a higher density of defects in localized tail states. The results showed the same conduction and emission mechanisms for the PP+IN and PIN+N diodes with the same active layer, regardless of the conduction type of substrate, proving that it is feasible to use the same process for developing light emission devices on p-type and n-type Si substrates.