Abstract
The a-SiOx:H thin films were deposited by the gas-jet electron beam plasma chemical vapor deposition method with different stoichiometry (x=0.15-1.0) for different SiH4 flow rates. The concentration of hydrogen in the films increases with the growth rate in ranges from 1.5 to 4.8 at.%. Further annealing leads to the effusion of hydrogen from the structure of the material and the compression of the structure, which leads to a reduction in the thickness for all films. X-ray diffraction measurements showed that the as-deposited films crystallized to form nc-Si about 4-8 nm in size after annealing at 1000°C.
Highlights
Low-dimensional silicon systems have higher light-emitting effects, which can be a potential source for the realization of silicon based optoelectronic devices [1]
Various nanostructured silicon materials are intensively studied, for example, nanocrystalline silicon embedded in a silicon oxide matrix
The thickness of as-deposited and annealed films was investigated by Fourier transform infrared (FTIR) spectroscopy
Summary
Low-dimensional silicon systems have higher light-emitting effects, which can be a potential source for the realization of silicon based optoelectronic devices [1]. Various nanostructured silicon materials are intensively studied, for example, nanocrystalline silicon embedded in a silicon oxide matrix. The first method is direct synthesis of nc-Si (nanocrystalline silicon) films, for example, by chemical vapor deposition in a single-step process [2, 3].
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