Abstract
The amorphous silicon suboxide thin films were synthesized by the gas-jet electron beam plasma chemical vapor deposition method. The thickness of the thin films was obtained using a cross-section SEM image (destructive) and an analysis of interference effects in the IR transmission spectra (non-destructive). The film thicknesses obtained by the cross-section SEM images were about 600 nm for all samples. An approximation of the silicon suboxide film thickness was made using a Gaussian distribution, which showed good agreement with the experimental values. The thickness obtained from the analysis of the IR transmission spectra increases from 400 nm to 500 nm with increasing Gmix. It was found that the oxygen concentration of the thin films decreases from 45 to 22% with an increase in Gmix.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
