Electrical properties of Schottky contacts of Al on p-Si1−xGex alloys were investigated. The Si1−xGex strained layers were grown on p-Si substrates by using rapid thermal process/very low pressure-chemical vapor deposition. Low reverse currents were obtained. It was found that the Schottky barrier height of Al/p-Si1−xGex contacts decreased with increasing Ge fraction. The decrement is in accordance with the decrement of the band gap of the strained Si1−xGex. The Fermi level at the interface is pinned at about 0.43 eV below the conduction band. The influence of strain relaxation for SiGe alloy layers and the Si sacrificial cap layers on the properties of Schottky contacts were also investigated.