Abstract
We have fabricated strained SixGe1−x/SiyGe1−y multiple quantum wells on Ge(100) substrates and measured the photoluminescence (PL) spectra, observing band-edge emission from the SiGe alloy layers. The emission is due to the recombination of both bound excitons and free excitons in the quantum wells. From the positions of the observed PL lines, we have evaluated the band-gap energies of the strained SiGe alloy layers, and found them to be smaller than those of bulk SiGe alloys. The band-gap energy increases with the Si content of the alloy, reaching a maximum at about 15% Si, and subsequently decreases. These results agree well with the theoretical calculations for strained layers, and suggest a type II band alignment in some cases for SixGe1−x/SiyGe1−y heterostructures on Ge(100).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
