Si Template Research Articles

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride vapour-phase epitaxy on SiC/(001)Si heterostructure

The structure of 10-μm-thick GaN layer grown by chloride vapour-phase epitaxy on 1.5-inch SiC/(001)Si templates has been investigated by transmission electron microscopy (TEM). The silicon carbide buffer layer has been fabricated by a new method of solid-phase synthesis. It was found that the GaN layer consists of oriented grains with size of tenths of a micron. The grains have wurtzite structure, and the {0001} GaN planes are oriented parallel to {111} Si, that is, the deviation of the axis c of GaN crystallite from the normal to the substrate is about 52°. The revealed epitaxial relationship between substrate and most grains is (022̄3)GaN||(001)3C-Si||(001)Si and [21̄1̄0]GaN||[110]3C-SiC||[110]Si. Some inclusions of sphalerite gallium nitride were also found in the epilayer.

Pulsed laser deposition of hexagonal GaN-on-Si(100) template for MOCVD applications

Growth of hexagonal GaN on Si(100) templates via pulsed laser deposition (PLD) was investigated for the further development of GaN-on-Si technology. The evolution of the GaN growth mechanism at various growth times was monitored by SEM and TEM, which indicated that the GaN growth mode changes gradually from island growth to layer growth as the growth time increases up to 2 hours. Moreover, the high-temperature operation (1000 °C) of the PLD meant no significant GaN meltback occurred on the GaN template surface. The completed GaN templates were subjected to MOCVD treatment to regrow a GaN layer. The results of X-ray diffraction analysis and photoluminescence measurements show not only the reliability of the GaN template, but also the promise of the PLD technique for the development of GaN-on-Si technology.

Observation of out-of-plane unidirectional anisotropy in MgO-capped planar nanowire arrays of Fe

We report on the effect of cap layer material on the magnetic properties and aging of the Fe-NW (nanowire) arrays grown on oxidized vicinal Si (111) templates using atomic terrace low angle shadowing technique. We find that the Fe-NW arrays capped with metallic (Ag) layers do not show any sign of degradation with aging, whereas NW arrays capped with insulating dielectric (MgO) layers show degradation of the saturation magnetization and an out-of-plane unidirectional anisotropy. We find that this out-of-plane unidirectional anisotropy competes with the shape anisotropy which is still the dominant anisotropy. The origin of this additional anisotropy is explained on the basis of oxidation of Fe due to the presence of MgO that leads to the formation of an oxide interlayer. This oxide interlayer forms at the expense of NW materials, leading to reduction in the thickness of some of the Fe-NWs within the array, and orients their magnetic moments out-of-plane. The reduction in NW thickness and the presence of Fe-O interlayer facilitates stabilization of this anisotropy. Our model is supported by x-ray absorption spectroscopy studies performed as a function of aging, which suggests that the oxide interlayer thickness increases with aging.

Magnetization Reversal Behaviour of Planar Nanowire Arrays of Fe

Systematic investigations of magnetization behavior performed on planar arrays of 30 nm wide Fe-nanowires (NW) fabricated on oxidized step-bunched Si (111) templates reveal that the NW arrays exhibit an uniaxial anisotropy dominated by the shape of the wires, that facilitates in retaining the magnetization in-plane with easy axis parallel to the wires. The NWs possess polycrystalline character with bcc-crystal structure, and present an oxidized interface when capped with MgO. From the temperature dependent magnetization studies we find that for thick wires (>4.5 nm) the magnetization reversal is governed by the curling reversal mode. Whereas, for thin wires the reversal is dominated by thermal activation.

(Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications

Lately, the semiconductor industry has paid a lot of attentions to the III-V compound semiconductor materials such as InSb, InxGa1-xAs for next generation CMOS applications, because these materials have significantly higher carrier mobility than silicon. For example, the electron mobility of InAs could reach 20000 cm2V-1s-1. High-speed devices such as quantum-well field-effect transistors (QWFETs) made from these III-V materials have demonstrated very low gate delay time. However, hole mobility for III-V materials are very low in general, some are even lower than the hole mobility of Si. So, it is important to look for a proper material with high hole mobility as p-channel FETs for future complementary CMOS architecture. Since Ge has a much higher bulk hole mobility (mh =1900 cm2/Vs) as compared to GaAs (mh = 400 cm2/Vs), Ge is suitable as p type channel material. Due to the small lattice mismatch (~0.08%) between GaAs and Ge, the integration of Ge with GaAs is comparable easy as compared to grow on Si , therefore thick Ge film can be grown as channel on GaAs substrates with very low defect density and integrate with InxGa1-xAs devices as a CMOS structure. In this talk, the growth of high quality Ge film on GaAs substrate by ultra high vacuum chemical vapor deposition (UHVCVD) and high quality InAs material on Ge/SiGe/Si template grown by molecular beam epitaxy (MBE) will be particularly reported. By the observation of XRD and AFM, both Ge film grown on GaAs material and InAs grown on Si substrates demonstrate high crystallinity and good surface morphology. The developed epitaxial materials systems including Ge on GaAs and InAs on Si are useful for future III-V/Ge/Si integration for next generation high speed low power CMOS application as well as for RF/digital mixed signal circuit application in the future.

Fabrication of the similar porous alumina silicon template for soft UV nanoimprint lithography

High density honeycombed nanostructures of porous alumina template (PAT) have been widely used to the fabrication of various electronic, optoelectronic, magnetic, and energy storage devices. However, patterning structures at sub-100nm feature size with large area and low cost is of great importance and hardness on which semiconductor manufacture technology depends. In this paper, soft UV nanoimprint lithography (SUNIL) by using PAT as the initial mold is studied in detail. The results reveal a significant incompatibility between these two candidates. The native nonflatness of the PAT surface is about 100nm in the range of 2–5μm. Resist detaches from the substrate because of the mold deformation in the nonflat SUNIL. A two-inch similar porous alumina silicon (Si) template with nanopore size of 50–100nm is fabricated. I–t curve conducted anodization and subsequent inductive coupled plasma (ICP) dry etching are applied to ensure the uniformity of the fabricated template. The surface flatness of the similar porous alumina Si template is the same as the polished Si wafer, which perfectly matches NIL.

(Invited) The Materials Integration of Ge and InxGa1-X As on Si Template for Next Generation CMOS Applications

not Available.

Atomic Layer Deposition Grown Hafnia Nanotubes Functionalized with Gold Nanoparticle Composites

Tetrakis(dimethylamido) hafnium(IV) (TDMAHf) precursor and water vapor as an oxidant were employed to synthesize hafnia (HfO2). Atomic layer deposition (ALD) was used to fabricate highly ordered hafnia nanotubes within the tubular channels of macro-porous silicon (Si) templates. Subsequently, the hafnia nanotubes were harvested from the porous Si template by chemical dissolution of the Si matrix using aqueous NaOH. We synthesized gold-polymer composite from 35 nm diameter gold nanoparticles (AuNPs) modified with 11-mercaptoundecanoic acid in order to functionalize the surface of the ALD grown HfO2 nanotubes. Scanning electron microscopy (SEM) and transmission electron spectroscopy (TEM) were used for physical analysis in order to characterize the morphology of the Si template, the AuNPs and the resultant HfO2 tubes functionalized with gold nanoparticles.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

From conformal overgrowth to lateral growth of indium arsenide nano structures on silicon substrates by MOVPE

A methodology for the deposition of lateral InAs nanostructures on silicon by selective area metal organic vapor phase epitaxy (SA-MOVPE) is presented. Growth parameters which are optimal for the SA-MOVPE of conformal InAs overgrowth on GaAs nanowires were transferred to the lateral SA growth of InAs structures on patterned silicon substrates. The substrate pretreatment conditions and growth parameters were further optimized with respect to selectivity and nanostructure morphology. It is found that lateral growth of InAs nano structures can be achieved on patterned Si(110) as well as on patterned silicon on insulator (SOI) substrates. An investigation of the laterally grown InAs/Si nanowires' crystal structure revealed a faceted but nevertheless abrupt Si–InAs interface on the Si(110) substrate as well as relaxation and a high crystallinity of the deposited InAs on both Si template types. The morphology and crystallinity of laterally grown structures are discussed in detail and compared to that of vertical shell/core InAs/GaAs nanowires.

Highly Stable Porous Silicon–Carbon Composites as Label-Free Optical Biosensors

A stable, label-free optical biosensor based on a porous silicon-carbon (pSi-C) composite is demonstrated. The material is prepared by electrochemical anodization of crystalline Si in an HF-containing electrolyte to generate a porous Si template, followed by infiltration of poly(furfuryl) alcohol (PFA) and subsequent carbonization to generate the pSi-C composite as an optically smooth thin film. The pSi-C sensor is significantly more stable toward aqueous buffer solutions (pH 7.4 or 12) compared to thermally oxidized (in air, 800 °C), hydrosilylated (with undecylenic acid), or hydrocarbonized (with acetylene, 700 °C) porous Si samples prepared and tested under similar conditions. Aqueous stability of the pSi-C sensor is comparable to related optical biosensors based on porous TiO(2) or porous Al(2)O(3). Label-free optical interferometric biosensing with the pSi-C composite is demonstrated by detection of rabbit IgG on a protein-A-modified chip and confirmed with control experiments using chicken IgG (which shows no affinity for protein A). The pSi-C sensor binds significantly more of the protein A capture probe than porous TiO(2) or porous Al(2)O(3), and the sensitivity of the protein-A-modified pSi-C sensor to rabbit IgG is found to be ~2× greater than label-free optical biosensors constructed from these other two materials.

Electron transport mechanisms in individual cobalt-doped ZnO nanorods

This study examined carrier transport in single cobalt-doped zinc oxide (Co:ZnO) nanorods in temperatures ranging from 80 to 405 K. Measurements were taken on single nanorods deposited on a Si template, where two- and four-point metallic contacts were previously made using e-beam lithography, dielectrophoresis, and focused ion beam. In both two- and four-point probe measurements, the current–voltage curves were clearly linear and symmetrical with respect to both axes. The electrical measurements were carried out according to three different measuring methods to accurately determine the resistivity of the single Co:ZnO nanorods. The Co-doped nanorods exhibited ferromagnetic behavior at room temperature. The remanence permanent magnet of the nanorods increased with increasing Co concentration, however, this was accompanied by the decrease in electrical resistivity. The transport properties were dominated by the thermal activation of electrons from the Fermi level to the conduction band for a temperature above 140–160 K, and to the impurity band at a lower temperature. The electronic transport of the nanorods was influenced by the surface states when exposed in the air.

Epitaxial phase‐change materials

AbstractEpitaxial $ {\rm Ge}_{2} {\rm Sb}_{2} {\rm Te}_{5} $ thin layers were successfully grown in the metastable cubic phase on both slightly lattice‐mismatched (GaSb) and highly lattice‐mismatched (Si) templates. The higher quality of the films grown on (111)‐oriented substrates is attributed to the tendency to form layered structures in the stable bulk phase as well as to the nature of distortion in the metastable cubic phase. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Quantum phase slips in superconducting Nb nanowire networks deposited on self-assembled Si templates

Robust porous silicon substrates were employed for generating interconnected networks of superconducting ultrathin Nb nanowires. Scanning electron microscopy analysis was performed to investigate the morphology of the samples, which constitute of polycrystalline single wires with grain size of about 10 nm. The samples exhibit nonzero resistance over a broad temperature range below the critical temperature, fingerprint of phase slippage processes. The transport data are satisfactory reproduced by models describing both thermal and quantum fluctuations of the superconducting order parameter in thin homogeneous superconducting wires.

Nanoscale Si template for the growth of self-organized one-dimensional nanostructures

Through silicon deposition onto the silver (110) surface, we have fabricated in a one-step process a highly perfect nanoscale template consisting of a self-assembled Si nanostripe array with a pitch of 2nm, covering uniformly the entire surface. Scanning tunneling microscopy investigations show that this system can be used, in a very simple way, as a template for the growth of identical highly ordered one-dimensional nanostructures. The adsorption of Co at room temperature and C60 at 190°C gives rise to the growth of self-organized one-dimensional nanostructures reproducing the one-dimensional pattern of the Si template.

Crystallinity Control of Ferromagnetic Contacts in Stressed Nanowire Templates and the Magnetic Domain Anisotropy

We report the controlled growth of single-crystalline ferromagnetic contacts through solid state reaction at nanoscale. Single-crystal Mn(5)Si(3) and Fe(5)Ge(3) contacts were grown within stressed Si and Ge nanowire templates, where oxide-shells were used to exert compressive stress on the silicide or germanide. Compared to polycrystalline silicide and germanide structures observed within bare nanowires, the built-in high strain in the oxide-shelled nanostructures alters the nucleation behavior of the ferromagnetic materials, leading to single crystal growth in the transverse/radial direction. Interestingly, the compressive stress is also found to affect the magnetic anisotropy of the ferromagnetic contacts. In-plane and out-of-plane magnetization were observed in Fe(5)Ge(3) for different crystal orientations, showing distinctly preferred domain orientations. These interesting results display the capability to control both the crystallinity and the magnetic anisotropy of ferromagnetic contacts in engineered nanostructures.

Magnetic properties of planar nanowire arrays of Co fabricated on oxidized step-bunched silicon templates

Planar nanowire (NW) arrays of Co grown on oxidized step-bunched Si(111) templates exhibit room temperature ferromagnetic behaviour for wire widths down to 25 nm. Temperature and thickness dependent magnetization studies on these polycrystalline NW arrays show that the magnetic anisotropy of the NW array is dominated by shape anisotropy, which keeps the magnetization in-plane with easy axis parallel to the wires. This shape related uniaxial anisotropy is preserved even at low temperatures (10 K). Thickness dependent studies reveal that the magnetization reversal is governed by the curling mode reversal for thick wires whereas thinner wires exhibit a more complex behaviour which is related to thermal effects and size distribution of the crystal grains that constitute the NWs.

CVD Growth of Graphene on 2’’ 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity

Structural and electrical properties of graphene elaborated on 3C-SiC(111)/Si and 3C-SiC(100)/Si templates, using propane-argon gas mixtures under CVD environment, are presented. On 3C-SiC(111), the graphitic phase is clearly attributable to graphene and presents good electrical conductivity at the macroscopic scale. The opposite case is observed on 3C-SiC(100), for which the graphitic phase develops more rapidly but with a high degree of disorientation. The graphitization, which can be coupled with 3C-SiC growth stage, is efficient over the whole surface of 2’’ wafer and allows to elaborate, in a single process, Graphene on Silicon wafers.

Effects of pre-annealing conditions on the characteristics of ZnO nanorods and ZnO/p-Si heterojunction diodes grown through hydrothermal method

Pre-annealing of seed layers before the growth of ZnO nanorods (NRs), at various temperatures (non-annealing ~800°C) and in various atmospheres (vacuum, N2, or O2), was systematically studied to investigate the effects of pre-annealing on the material properties of ZnO NRs as well as the rectifying behaviour of ZnO NRs/p-Si heterojunction diodes (HJDs). A seed layer was initially prepared on the Si substrate through hydrothermal (HT) method and subsequently pre-annealed; finally, the ZnO NRs were grown through the same HT method. We found that without the annealed seed layer, the ZnO NRs cannot be grown on the Si template and increase in the pre-annealing temperature led to better crystallization and fewer defect-centres in ZnO NRs. However, at a high pre-annealing temperature, the characteristics of ZnO NRs degraded due to the evaporation of oxygen atoms, resulting in more oxygen-vacancy-related defects. The smallest diameter and shortest length of ZnO NRs were observed on the samples pre-annealed at 450°C. The short length of ZnO NRs implies a slow growth rate, because of which the NRs have sufficient time to align normal to the surface of the substrate. When the seed layer is pre-annealed in an O2 atmosphere, the oxygen atoms fill the oxygen-vacancy-related defects, which lead to a higher nucleation density and improved characteristics of ZnO NRs. This leads to an extremely high rectification ratio of 1.8×105 in ZnO NR/p-Si HJDs. The related mechanisms were explored in this study.

Structural and magnetic properties of planar nanowire arrays of Co grown on oxidized vicinal silicon (111) templates

We fabricated planar arrays of Co nanowires (NWs) on oxidized step-bunched Si (111) templates using shallow angle deposition. These planar NW arrays exhibit ferromagnetic behavior at room temperature for NW widths down to 25 nm. The NWs possess polycrystalline character with hcp-crystal structure, and present a lightly oxidized interface when capped with MgO. The magnetic anisotropy of the NW array is dominated by the shape anisotropy, which keeps the magnetization in-plane with easy axis parallel to the wires. By reducing the inter-wire separation, we obtain NW arrays with reduced coercivity demonstrating the importance of magneto-static interactions in determining the magnetic properties of the NWs.