Abstract
The structure of 10-μm-thick GaN layer grown by chloride vapour-phase epitaxy on 1.5-inch SiC/(001)Si templates has been investigated by transmission electron microscopy (TEM). The silicon carbide buffer layer has been fabricated by a new method of solid-phase synthesis. It was found that the GaN layer consists of oriented grains with size of tenths of a micron. The grains have wurtzite structure, and the {0001} GaN planes are oriented parallel to {111} Si, that is, the deviation of the axis c of GaN crystallite from the normal to the substrate is about 52°. The revealed epitaxial relationship between substrate and most grains is (022̄3)GaN||(001)3C-Si||(001)Si and [21̄1̄0]GaN||[110]3C-SiC||[110]Si. Some inclusions of sphalerite gallium nitride were also found in the epilayer.
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