TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

Abstract

We present the results of a conventional and high-resolution electron microscopy investigation of thick (up to 15 μm) semipolar GaN layers grown on Si(001) offcut substrates with 3C-SiC and AlN buffer layers. GaN and AlN layers have been grown by chloride vapor phase epitaxy. The silicon carbide buffer layers were produced by a new method of solid-phase synthesis on 4 and 7° offcut Si(001) substrates. It is shown that the use of solid-phase synthesis for the formation of SiC layer allows one to grow a semipolar GaN layer. The asymmetrical defect structure of the semipolar layer is revealed.