Si Radicals Research Articles

Deposition and properties of a-Si:H by cylindrical diode glow discharge

The effect of plasma parameter on the properties of a-Si:H films prepared by glow discharge process in cylindrical diode system has been studied. The glow discharge plasma is examined by measurements of the emission spectra for H, H 2, SiH and Si radicals, the mass spectra for primary decomposed and secondary polymerized ions, and the rf discharge impedance. The plasma reactions are dominated by the rf electric potential V p and silane gas pressure p. The nucleation of SiH 2 bonding depends critically on the electron and ion bombardments and the plasma polymerization.

Addition of R3Ge and R3Si Radicals to Multiple Bonds

Addition of R₃Ge and R₃Si Radicals to Multiple Bonds