Dissociation Of SiH4 Research Articles

A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

ABSTRACTWe propose a model for laser-induced chemical vapor deposition in which the growth of hydrogenated amorphous silicon (a-Si:H) thin films is rate-controlled by the gas phase homogeneous thermal dissociation of SiH4 The gas temperature is determined by a steady-state balance between energy absorbed from the laser and energy lost by thermal conduction.The film properties are primarily controlled by the substrate temperature.

Silane dissociation mechanisms and thin film formation in a low pressure multipole dc discharge

A silane plasma is generated by a hot cathode dc discharge in a partially confining multipolar magnetic structure yielding hydrogenated amorphous silicon thin films on the walls. The low-pressure range (0.1–5 mTorr) allows the analysis of the elementary processes for SiH4 dissociation. At low silane partial pressure the deposition rate remains in the range of 1–10 Å/sec, but the contribution of ions to deposition can reach up to 80% in contrast with standard glow discharges.