Abstract
A silane plasma is generated by a hot cathode dc discharge in a partially confining multipolar magnetic structure yielding hydrogenated amorphous silicon thin films on the walls. The low-pressure range (0.1–5 mTorr) allows the analysis of the elementary processes for SiH4 dissociation. At low silane partial pressure the deposition rate remains in the range of 1–10 Å/sec, but the contribution of ions to deposition can reach up to 80% in contrast with standard glow discharges.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Applied Physics Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
