Si Bottom Electrode Research Articles

Multifilamentary switching of Cu/SiOx memristive devices with a Ge-implanted a-Si underlayer for analog synaptic devices

Various memristive devices have been proposed for use in neuromorphic computing systems as artificial synapses. Analog synaptic devices with linear conductance updates during training are efficiently essential to train neural networks. Although many different analog memristors have been proposed, a more reliable approach to implement analog synaptic devices is needed. In this study, we propose the memristor of a Cu/SiOx/implanted a-SiGex/p++ c-Si structure containing an a-Si layer with properly controlled conductance through Ge implantation. The a-SiGex layer plays a multifunctional role in device operation by limiting the current overshoot, confining the heat generated during operation and preventing the silicide formation reaction between the active metal (Cu) and the Si bottom electrode. Thus, the a-SiGex interface layer enables the formation of multi-weak filaments and induces analog switching behaviors. The TEM observation shows that the insertion of the a-SiGex layer between SiOx and c-Si remarkably suppresses the formation of copper silicide, and reliable set/reset operations are secured. The origin of the analog switching behaviors is discussed by analyzing current-voltage characteristics and electron microscopy images. Finally, the memristive-neural network simulations show that our developed memristive devices provide high learning accuracy and are promising in future neuromorphic computing hardware.

Effects of Top and Bottom Electrodes Materials and Operating Ambiance on the Characteristics of MgFx Based Bipolar RRAMs.

The effects of electrode materials (top and bottom) and the operating ambiances (open-air and vacuum) on the MgFx-based resistive random-access memory (RRAM) devices are studied. Experiment results show that the device's performance and stability depend on the difference between the top and bottom electrodes' work functions. Devices are robust in both environments if the work function difference between the bottom and top electrodes is greater than or equal to 0.70 eV. The operating environment-independent device performance depends on the surface roughness of the bottom electrode materials. Reducing the bottom electrodes' surface roughness will reduce moisture absorption, minimizing the impact of the operating environment. Ti/MgFx/p+-Si memory devices with the minimum surface roughness of the p+-Si bottom electrode show operating environment-independent electroforming-free stable resistive switching properties. The stable memory devices show promising data retentions of >104 s in both environments with DC endurance properties of more than 100 cycles.

Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

Low operation power and high endurance of resistive random access memory (RRAM) as a synaptic device are critical parameters for in-memory computing applications. Yet, high power consumption and reliability issue of silicon bottom electrode (BE) RRAM hinder its commercialization as a synaptic device. In this experiment, we report on the improvement of switching characteristics of silicon BE nanowedge RRAM via the Nickel (Ni) silicidation process. Existing highly doped Si-BE forms a SiO2 interfacial layer (IL) during a switching layer deposition and increases an effective thickness, leading to increased voltage drop within the RRAM device and large cycle-to-cycle variations. By siliciding the Si-BE with Ni, the issue of IL formation is removed and the resistance of metallic NiSi BE is further reduced compared to Arsenic (As <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ) doped Si BE. Both dc and ac analyses of the fabricated NiSi-BE nanowedge RRAM have shown the reduction of overshoot and switching current down to 55% of the original value. Transmission electron microscopy (TEM) and energy-dispersive spectroscopy (EDS) analysis convinced the formation of NiSi BE. In addition, gradual switching characteristics, uniform low resistance state (LRS), and better endurance of NiSi-BE nanowedge RRAM enable the Si compatible approach to fabricate a large-size RRAM cross-point array for utilization in hardware-implemented neuromorphic computing applications.

Resistance Switching Properties of Silicon Nitride Material with Heavily Doped Si As Bottom Electrode

RRAMs are considered as the most promising devices for NVM and storage class memory applications at technology nodes below 20nm. In addition, due to their memristive properties pave the way for the realization of neuromorphic prototype circuits. The majority of these devices are two-terminal MIM structures and use as insulator (active material) metal oxides in combination with proper metals. The present models assuming the oxide and metal physical and chemical properties seem that can explain the observed resistive phenomena. Nevertheless, the effect of humidity seems to play a crucial role in the reliability of RRAMs. In this context, nitride based insulators are of special importance because of their immunity in humidity and oxygen related parasitic effects. The present contribution reports on the preliminary results related to our research on MIM devices where LPCVD Si3N4 is used as insulating material, sputtered Cu as active (top) electrode and heavily doped Si (<0.003 Ω.cm) bottom electrode (BE). Both conductivity types of Si n and p have been tested (Figure). The devices have been characterized in terms of static I-V, resistance variability, impedance spectroscopy (IS) and retention measurements. Room temperature I-V measurements suggest that a space charge limited conduction (SCLC) is dominating through the nitride layer. According to our results the MIM diodes with p+ Si as BE present higher variability in VSET and VRESET compare to those diodes with n+ Si BE. IS measurements are in progress to investigate the mechanism for resistance switching. Upon the current results, his mechanism may be attributed to the presence of diffusion process. Temperature variable measurements are currently contacted in order to identify the electronic or ionic nature of the diffusion mechanism. The fabricated devices exhibit attractive multi-state operation under different current compliance values. In addition, retention measurements at room temperature indicated that the LRS is retained for 10 yrs. Figure 1

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.

Effects of bottom electrode on resistive switching of silver programmable metallization cells with GdxOy/AlxOy solid electrolytes

This study investigated the effects of the bottom electrode (BE) on the resistive switching (RS) of silver programmable metallization cells (Ag-PMCs) with gadolinium oxide and aluminum oxide (GdxOy/AlxOy) solid electrolytes (SEs). The RS mechanisms of memories with different bottom electrodes were proposed based on the temperature dependence of the resistance at low resistance state (LRS) and current–voltage (I–V) fitting at high resistance state (HRS). The Schottky emission was dominant in the resistive switching of the memory with an iridium bottom electrode (Ir-BE), whereas in the memories with n+-Si and nickel (Ni) bottom electrodes, silver and both silver and nickel ions dominated the resistive switching, respectively. Additionally, the Ag-PMC with Ni-BE had a high resistance ratio of more than 107 as a result of the extremely low resistance of roughly 50 Ω at LRS. The Ag-PMCs with GdxOy/AlxOy SEs and Ni-BE exhibited a retention behavior of more than 104 s and an endurance of more than 500 cycles with a resistance ratio of at least four orders of magnitude, which is promising for future high-density nonvolatile memory applications.

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Resistive switching properties of a 2-nm-thick SiO2 with a CeOx buffer layer on p+ and n+Si bottom electrodes were characterized. The distribution of set voltage (Vset) with the p+Si bottom electrode devices reveals a Gaussian distribution centered in 4.5V, which reflects a stochastic nature of the breakdown of the thin SiO2. Capacitance–voltage (C–V) measurements indicate the trapping of electrons by positively shifting the C–V curve by 0.2V during the first switching cycle. On the other hand, devices with the n+Si bottom electrodes showed a broad distribution in Vset with a mean value higher than that of p+Si bottom electrode devices by 0.9V. Although no charge trapping was observed with n+Si bottom electrode devices, a degradation in interface states was confirmed, causing a tail in the lower side of the Vset distribution. Based on the above measurements, the difference in the Vset can be understood by the work function difference and the contribution of electron trapping.

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

In this paper, we propose a TaOx resistive switching random access memory (RRAM) device with operation-polarity-dependent self-selection effect by introducing highly doped silicon (Si) electrode, which is promising for large-scale integration. It is observed that with highly doped Si as the bottom electrode (BE), the RRAM devices show non-linear (&amp;gt;103) I-V characteristic during negative Forming/Set operation and linear behavior during positive Forming/Set operation. The underling mechanisms for the linear and non-linear behaviors at low resistance states of the proposed device are extensively investigated by varying operation modes, different metal electrodes, and Si doping type. Experimental data and theoretical analysis demonstrate that the operation-polarity-dependent self-selection effect in our devices originates from the Schottky barrier between the TaOx layer and the interfacial SiOx formed by reaction between highly doped Si BE and immigrated oxygen ions in the conductive filament area.

Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

Amorphous Si (a‐Si) based memory devices that offer significant improvement in switching performance are fabricated by inserting a gold nanoparticles (Au NPs) monolayer between the amorphous Si and inert bottom electrodes. It is demonstrated that the Au NPs‐interlayer amorphous Si memory devices deliver great improvements in lowering the electroforming voltage as well as enhancing the ON/OFF ratio, as compared to a pure amorphous Si memory structure. The switching mechanism is due to the modified electric field distribution with the insertion of Au NPs, which can directly affect the dynamic transport of ions and lead to the change of filament growth. Transmission electron microscopy (TEM) is used to directly capture the filaments growth process in these two types of memory devices to verify the evolution of conductive filament (CF). In addition, it is also demonstrated that the Au NPs‐interlay amorphous Si memory fabricated on a flexible substrate can maintain low electroforming voltage and high ON/OFF ratio. This fabrication approach offers a versatile structural platform for next‐generation memory applications with enhancement of the switching properties.

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

In this letter, we report unique unipolar resistive switching memory behaviors in the Ni/Si3N4/p-Si structure by controlling the impurity concentration of Si bottom electrode. It is found that we can decrease the reset current drastically by reducing dopant concentration by reducing dopant concentration, which helps low-power operation in the high density resistive switching memory array. Also, the samples with high impurity concentration exhibited ohmic conduction in the low-resistance state (LRS) while those with low dopant concentration below 1018 cm−3 showed a remarkable self-rectifying behavior. The nonlinear metal-insulator-semiconductor (MIS) diode characteristics in the samples with low doping concentration (∼1018 cm−3) are explained by the formation of Schottky barrier at the metal and semiconductor interface. As a result, we demonstrate high rectification ratio (&amp;gt;105) between forward and reverse currents along with the robust nonvolatile properties including endurance cycles and retention from the devices with large self-rectification ratio. The high self-rectifying characteristics of Si3N4-based RRAM cell would be one of the most virtuous merits in the high-density crossbar array.

Dielectric properties of bismuth niobate films using LaNiO3 bottom electrode

Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) and LaNiO3 bottom electrode substrates at room temperature from the polymeric precursor method. X-ray powder diffraction was used to investigate the formation characteristics and stability range of the tetragonal modification of a fluorite-type solid solution. The results showed that this tetragonal, commensurately modulated phase forms through the intermediate formation of the incommensurately modulated cubic fluorite phase followed by the incommensurate-commensurate transformation. LaNiO3 (LNO) bottom electrode strongly promotes the formation of high intensity (111) texture of BNO films. The dielectric constants of the films increased from 192 to 357 at 1 MHz with the bottom electrode while the leakage current behavior at room temperature of the films decreased from 10−7 to 10−8 A/cm2 at a voltage of 5 V. The reduction of dc leakage current is explained on the basis of relative phase stability and improved microstructure of the material. The capacitance density of 75 fC/µm2, dielectric loss of 0.04 % at 1 MHz, and breakdown strength of about 0.30 MV/cm is compatible with embedded decoupling capacitors applications.

Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices

In this work, a self-rectifying property of silicon nitride (Si3N4)/silicon (Si)-based one diode type resistive random access memory (RRAM) device with silicon oxide (SiO2) tunnel barrier is demonstrated. The RRAM devices, switching layers consisted of Si3N4/SiO2/Si, are fabricated by a low-pressure chemical vapor deposition and dry oxidation, and revealed intrinsic diode property, so as to remove unwanted sneak path currents from an RRAM cross-bar array without extra switching devices. In addition, compared to Pt/Si3N4/Ti RRAM cells, whole operating current levels in proposed cells have been lowered about ∼103 since introduced Si bottom electrode and SiO2 tunnel barrier efficiently suppress the current in both low and high resistive states. Consequently, these results show that the Si3N4-based one diode type RRAM cells warrant the realization of selector-free RRAM cell in the high density crossbar array.

Formation of Pb0.6Sr0.4(Ti0.97Mg0.03)O2.97 thin films on assembled bottom electrodes with titanium silicide nanowires

Multi-layered bottom electrodes constituted by conductive Ti5Si3 thin films with and without TiSi nanowires were prepared on glass substrates by Atmosphere Pressure Chemical Vapor Deposition (APCVD) method. Pb0.6Sr0.4(Ti0.97Mg0.03)O2.97 (PST) thin films were deposited on the Ti–Si bottom electrodes by Radio-frequency Magnetron Sputtering Method. The morphology and phase structure of the PST thin films were observed and identified by FE-SEM and XRD, respectively. The dielectric properties of the PST thin films deposited on Ti–Si substrates were measured by Agilent 4294A Impedance Analyzer. Results show that the formation ability of the PST thin films can be reinforced by increasing crystallinity of Ti5Si3 thin films and increasing amount of TiSi nanowires. The preparation temperature of the PST thin films deposited on Ti5Si3 and TiSi-nanowire/Ti5Si3 bottom electrodes decreases by 75 °C and 98 °C, respectively, compared with the situation on ITO/glass substrate. The permittivity of the PST thin films deposited on TiSi-nanowire/Ti5Si3 bottom electrode is about 4 times higher than that deposited on ITO. The lowest dielectric loss of PST/TiSi-nanowire/Ti5Si3 thin films is <0.1 within a wide frequency range till 10 MHz, exhibiting impressive frequency stability compared with that deposited on ITO. High capacitance and high tunability also occur in PST/TiSi-nanowire/Ti5Si3 thin films. The tunability of the PST thin films is about 2.5 times higher on TiSi-nanowire/Ti5Si3 bottom electrode than that on ITO bottom electrode.

Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode

Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO2 and ZrO2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al2O3 and SiO2. Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO2, in contrast to the formation of oxygen-vacancy filaments in Al2O3. The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes.

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

In this paper, we study the effect of highly doped n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> Si as the bottom electrode on unipolar RRAM with Ni-electrode/ HfO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> structure. With heavily doped p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si as the bottom electrode, RRAM devices illustrate the coexistence of the bipolar and the unipolar resistive switching. Meanwhile, by substituting heavily doped n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si, the switching behavior changes to that of the self-rectifying unipolar device. The asymmetry and rectifying reproducible behavior in a n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si/HfO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> /Ni device resulted from the Schottky barrier of defect states in the SiO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> /HfO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> junction and n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> Si substrate, but this behavior is not seen for the p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -Si bottom electrode case. With rectifying characteristics and high forward current density observed in the Ni/HfO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> /n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> Si device, the sneak current path in the conventional crossbar architecture was significantly suppressed. We believe that the proposed structure is a promising candidate for future crossbar-type RRAM applications.

SYNTHESIS AND FERROELECTRIC PROPERTIES OF BiFeO3 THIN FILMS GROWN BY SPUTTERING

ABSTRACT There is currently significant interest in the field of ferroelectric thin film materials and devices, with a strong focus on the integration of thin films on Si-complementary metaloxide semiconductor (CMOS) for nonvolatile memory (Fe-RAM) applications. With dramatically high remnant polarization value, bismuth ferrite (BiFeO3) has emerged as one of the most attractive candidates for the storage capacitor layer. In this paper, BiFeO3 (BFO) thin films have been prepared on a stabilized Pt/Ti/SiO2/Si bottom electrode by RF sputtering. X-ray diffraction (XRD) of the target showed that a single perovskite phase and random polycrystalline structure without impurity or second phase accompanied. The remnant polarization values were measured as functions of working pressure, substrate temperature and the ratio of oxygen to argon, respectively. Optimal conditions for the deposition of BFO films were reported. The best ferroelectrics values have been measured for the sample BFO film.

THE EFFECT OF SEEDING LAYERS ON FERROELECTRIC PROPERTIES OF PTZT THIN FILMS

ABSTRACT In this paper, the TiOx and PbO seeding layers have been used to study the influence of Pb1.08(Ta0.005Zr0.3Ti0.695)O3 (PTZT) thin films on a stabilized Pt/Ti/SiO2/Si bottom electrode. The PTZT and PbO/PTZT/PbO XRD measurements show that the major perovskite orientations (100), (110) and (111) have been found together with pyrochlore and the TiOx/PTZT/TiOx XRD measurement displays strong (111)-preferred orientation. The best ferroelectrics values and fatigue properties have been measured for the sample TiOx/PTZT/TiOx film. And strongly asymmetric polarization hysteresis loops are observed in the sample PbO/PTZT/PbO. We take the view that the origin of the hysteresis loop offsets and asymmetry is caused by a strong electric field within a thin surface layer in which the ferroelectric polarization is smaller or even absent compared to the bulk of the film. The fatigue characteristic of PTZT thin films suggests that the TiOx and PbO seeding layers alleviate the accumulation of oxygen vacancies near the interface which has been proposed as a primary cause of fatigue in lead base perovskite thin films.

THE THICKNESS EFFECT OF PZT19 IN PZT19/PTZT/PZT19 THIN FILM

ABSTRACT RF sputtered 10% Pb excess PbZr0.1Ti0.9O3 (PZT19) placed at the top and bottom of RF sputtered 10%Pb excess PbTa0.005Zr0.3Ti0.695O3 (PTZT) films are grown on a stabilized Pt/TiOx/SiO2/Si bottom electrode at a relative low temperature. In order to check the influence of the PZT19 seeding layer thickness, the PZT19 seeding layers were sputtered for 1, 3, 8, 15 minutes with the thickness about 2, 6, 16, 30 nm. The sputtered films were annealed at 650°C for 10 minutes in O2 atmospheres. The PTZT film and PZT19/PTZT/PZT19 sandwich structure films XRD measurements show that the major perovskite orientations (100), (110) and (111) have been found. The best ferroelectrics values and fatigue properties have been measured for the sample PZT19/PTZT/PZT19 film with the seeding layer thickness about 6 nm. The fatigue characteristic of PTZT and PZT19/PTZT/PZT19 thin films show suggests that the PZT19 seeding layers alleviate the accumulation of oxygen vacancies near the interface which has been proposed as a primary cause of fatigue in lead base perovskite thin films. The comparison of these results with PTZT/Pt/TiOx basic structures suggests that an appropriate thickness seeding layer can improve the ferroelectric properties greatly.

Ti and TiO x seeding influence on the orientation and ferroelectric properties of sputtered PZT thin films

The integration of PZT thin films in MEMS requires a thorough control of nucleation and growth of the Metal/Ferroelectric/Metal multilayer. In this paper, the Ti seeding technology has been used to optimise the nucleation of Pb(Zr 0.52, Ti 0.48)O 3 thin films (PZT) on a stabilized Pt/TiO x /Si bottom electrode. TiO x (20 nm) and Pt (100 nm) films have been deposited on Si substrates by reactive sputtering in Ar+O 2 (90/10) and in pure Ar, respectively. The bottom electrode crystallisation rapid thermal annealing (RTA, 400 °C, 30 s) has been performed in N 2 or (N 2+O 2) atmospheres. A few nanometers thick Ti or TiO x seeding layer has been sputtered in Ar or Ar+O 2. Finally, 0.25 μm thick PZT films have been sputtered in pure Ar plasma and crystallised by RTA (700 °C, 30 s, in air). The PZT XRD measurements have shown the highest (1 1 1) orientation for the samples prepared with the Ti seeding layer deposited on the bottom electrode. Moreover, best ferroelectrics values have been measured for the sample with the air annealed bottom electrode and the Ti seeding layer ( P r=13.8 μC cm −2, E c=153 kV cm −1). These values have been recorded on 400 and 450 μm side length square top electrodes dispatched on a 1.5 cm 2 area. We have found a yield up to 80% with a 450 μm×450 μm top electrode surface. The comparison of these results with PZT/Pt/Ti basic structures point out the influence of the Ti seeding ultra-thin layer and the bottom electrode annealing conditions on the PZT crystallization in the perovskite phase.

Temperature induced growth away from the (00l) orientation in SrBi2Ta2O9films deposited by PLD

The research on ferroelectric materials has been largely driven by the possibility of application in non-volatile random access memories (NVFRAM). In particular, thin films of SrBi2Ta2O9 (SBT) [1–9] have attracted great interest as good candidates for NVFRAM technology due to the excellent behavior regarding fatigue, retention and leakage current. SBT belongs to a family of Bi layered-structure perovskite oxides [10], with a highly anisotropic pseudotetragonal structure [11] (a = 0.5531 nm, b = 0.5534 nm and c = 2.4984 nm) that leads to highly anisotropic ferroelectric properties. The spontaneous polarization vector in this material is in the a-b plane but, in films grown on Pt/TiO2/SiO2/Si(111) substrates, a large fraction of the crystallites grow with the a-b planes parallel to the plane of the substrate leading to low values of the net polarization [8, 9]. It is therefore desirable to manipulate film growth to enhance the projection of the polar vector in a direction perpendicular to the substrate surface. To achieve this goal, and for the more general purpose of studying the influence of crystal orientation on the ferroelectric properties of the SBT films, deposits have been made on substrates such as SrLaGaO4(110) [3]; SrTiO3(001), (011), (111) [4]; MgO(110) [5]; and SrLaAlO4(100) [6]. It is clear, however, from a technological point of view, that these are not suitable substrates for memory devices because of their silicon-based microelectronic incompatibility. Taking this into account,the results presented in this work are based on deposits made on conventional Pt/TiO2/SiO2/Si(111) bottom electrodes that are compatible with silicon microelectronic processes. As a consequence of the deposition conditions and the heat treatment applied, after the deposition, to the SBT films deposited on Pt electrodes, the fraction of crystallites grown with the (00l) planes parallel to the plane of the substrate was reduced. This led to an enhancement of the measured polarization, reflected in the maximum values of 2Pr = 9.1 μC/cm2 and coercive field, Ec, of 52.0 kV/cm, taken at a voltage of 5 V. As a result, the combination of a higher remnant polarization with lower coercive field obtained is better than that reported in recent works [12, 13] using the same technique and depositing on the same bottom electrodes. The SBT target used in the PLD process was a stoichiometric SrBi2Ta2O9 slab obtained from reagent grade oxides by the conventional ceramic method, sintered at 1250 ◦C for 3 h. The SBT films were grown by PLD using the 248 nm radiation of a KrF excimer laser (LPX 200 by Lambda Physik). The pulse repetition rate was 10 Hz with a fluence of approximately 1 J/cm2. The films, grown on Pt/TiO2/SiO2/Si(111) substrates, were 200 nm thick. The substrate-target separation was 5 cm and the oxygen pressure was 450 mTorr. The deposits were made at temperatures of 570–715 ◦C and then were post-annealed at 750 ◦C in air for 90 min. The resulting films were analyzed in a JSM-5300 scanning electron microscope (SEM), by Jeol, and by X-ray diffraction (XRD) using the Cu Kα line (λkα1 = 1.54056 A and λkα2 =1.54439 A) of a Phillips X’pert diffractometer. Argon ion magnetron sputtering was used for