Abstract
In this work, a self-rectifying property of silicon nitride (Si3N4)/silicon (Si)-based one diode type resistive random access memory (RRAM) device with silicon oxide (SiO2) tunnel barrier is demonstrated. The RRAM devices, switching layers consisted of Si3N4/SiO2/Si, are fabricated by a low-pressure chemical vapor deposition and dry oxidation, and revealed intrinsic diode property, so as to remove unwanted sneak path currents from an RRAM cross-bar array without extra switching devices. In addition, compared to Pt/Si3N4/Ti RRAM cells, whole operating current levels in proposed cells have been lowered about ∼103 since introduced Si bottom electrode and SiO2 tunnel barrier efficiently suppress the current in both low and high resistive states. Consequently, these results show that the Si3N4-based one diode type RRAM cells warrant the realization of selector-free RRAM cell in the high density crossbar array.
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