Abstract
As demand grows for efficient and affordable photovoltaic technology, investigating alternative materials becomes crucial. Tin-based perovskite has a low bandgap, great optoelectronic properties, and higher carrier mobility. It has become an interesting absorber layer for perovskite solar cells (PSCs). However, improving their device performance presents challenges. Copper-based hole transport materials (HTM) and zinc-based electron transport materials (ETM) offer low cost, easy fabrication, and high electrical conductivity. This research analyzes the impacts of these transport materials on the FASnI3 absorber layer using numerical modeling in SCAPS-1D. Through simulation analysis, the study thoroughly examines the effect of these materials on PSC performance parameters such as QE curve, layer thickness, defect density, interface defect, and doping concentration. Moreover, this study identifies the most efficient PSC configurations, achieving good performance by ITO/ZnSe/FASnI3/Cu2O/Au with aVoc of 2.05 V, Jsc of 29.316 mA/cm2, FF of 53.37 %, and power conversion efficiency (PCE) of 32.13 %, providing valuable insights in optimizing FASnI3 solar cells and advancing next-generation solar energy conversion technologies.
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