A thin passivating SiOx control layer has been deposited via self-limiting CVD on the InGaAs(001)-(2x4) surface by first depositing 2 monolayers of silicon with –Clx termination using Si2Cl6,and then subsequently oxidizing the silicon seed layer by employing anhydrous HOOH(g) at a substrate temperature of 350°C. After HOOH(g)) dosing, XPS spectra show a higher binding energy shoulder peak on Si2p indicative of SiOx bonding, while an unshifted Si 2p component remains, and In 3d, Ga 2p, and As 2p peaks show no higher binding energy components consistent with the prevention of III-V oxidation. Scanning tunneling spectroscopy (STS) measurements show after SiOx deposition on the InGaAs(001)-(2x4) surface, the bandgap broadens towards that of SiO2, with the electronic structure free of states in the bandgap leaving the surface ready for subsequent gate oxide ALD. Density functional theory calculations support the experimental STS data following TMA dosing, which shows TMA nucleates directly on the SiOx/InGaAs(001) surface and leaves an electrically passive interface with the bandgap free of defect states and the surface ready for high-K gate oxide nucleation.