Short-wavelength Infrared Research Articles

Ultra-Broadband Ultraviolet-Visible Light-Short Wavelength Infrared InGaAs Focal Plane Arrays via n-InP Contact Layer Removal.

PIN InGaAs short wavelength infrared (SWIR) focal plane array (FPA) detectors have attracted extensive attention due to their high detectivity, high quantum efficiency, room temperature operation, low dark current, and good radiation resistance. Furthermore, InGaAs FPA detectors have wide applications in many fields, such as aviation safety, biomedicine, camouflage recognition, and infrared night vision. Recently, extensive research has been conducted on the extension of the response spectrum from short wavelength infrared (SWIR) to visible light (VIS) through InP substrate removal and reserving the n-InP contact layer. However, there is little research on the absorption of InGaAs detectors in the ultraviolet (UV) band. In this paper, we present an ultra-broadband UV-VIS-SWIR 640 × 512 15 μm InGaAs FPA detector by removing the n-InP contact layer in the active area and reserving the InP contact layer around the pixels for n contact, creating incident light to be directly absorbed by the In0.53Ga0.47As absorption layer. In addition, the optical absorption characteristics of InGaAs infrared detectors with and without an n-InP contact layer are studied theoretically. The test results show that the spectral response is extended to the range of 200-1700 nm. The quantum efficiency is higher than 45% over a broad wavelength range of 300-1650 nm. The operability is up to 99.98%, and the responsivity non-uniformity is 3.28%. The imaging capability of InGaAs FPAs without the n-InP contact layer has also been demonstrated, which proves the feasibility of simultaneous detection for these three bands.

Sensitive Organic Photodetectors With Spectral Response up to 1.3µm Using a Quinoidal Molecular Semiconductor.

Detecting short-wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high-sensitivity SWIR-OPDs with an efficient photoelectric response extending up to 1.3µm is reported. These OPDs utilize a new ultralow-bandgap molecular semiconductor featuring a quinoidal tricyclic electron-deficient central unit and multiple non-covalent conformation locks. The SWIR-OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a -4V bias at 1.10µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal-generation carriers and dark current, resulting in excellent detectivity (Dsh *) exceeding 1013 Jones from 0.50 to 1.21µm and surpassing 1012 Jones even at 1.30µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35-1.25µm range, and image capture under 1.20µm irradiation demonstrate the extensive applications of this SWIR-OPD.

One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots.

III-V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III-V QDs. Here, we report a one-pot heat-up method to synthesize ∼8nm edge length (∼6.5nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55μm.

Room temperature operation of germanium-silicon single-photon avalanche diode.

The ability to detect single photons has led to the advancement of numerous research fields1-11. Although various types of single-photon detector have been developed12, because of two main factors-that is, (1) the need for operating at cryogenic temperature13,14 and (2) the incompatibility with complementary metal-oxide-semiconductor (CMOS)fabrication processes15,16-so far, to our knowledge, only Si-based single-photon avalanche diode (SPAD)17,18 has gained mainstream success and has been used in consumer electronics. With the growing demand to shift the operation wavelength from near-infrared to short-wavelength infrared (SWIR)for better safety and performance19-21, an alternative solution is required because Si has negligible optical absorption for wavelengths beyond 1 µm. Here we report a CMOS-compatible, high-performing germanium-silicon SPAD operated at room temperature, featuring a noise-equivalent power improvement over the previous Ge-based SPADs22-28 by 2-3.5 orders of magnitude. Key parameters such as dark count rate, single-photon detection probability at 1,310 nm, timing jitter, after-pulsing characteristic time and after-pulsing probability are, respectively, measured as 19 kHz µm-2, 12%, 188 ps, ~90 ns and <1%, with a low breakdown voltage of 10.26 V and a small excess bias of 0.75 V. Three-dimensional point-cloud images are captured with direct time-of-flight technique as proof of concept. This work paves the way towards using single-photon-sensitive SWIR sensors, imagers and photonic integrated circuits in everyday life.

Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix

SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxide (HfO2) matrix fabricated by using magnetron co-sputtering deposition at room temperature and rapid thermal annealing (RTA). The NCs were formed at temperatures in the range of 500–800 °C. RTA was performed to obtain SiGeSn NCs with surfaces passivated by the embedding HfO2 matrix. The formation of NCs and β-Sn segregation were discussed in relation to the deposition and processing conditions by employing HRTEM, XRD and Raman spectroscopy studies. The spectral photosensitivity exhibited up to 2000 nm in short-wavelength infrared (SWIR) depending on the Sn composition was obtained. Comparing to similar results on GeSn NCs in SiO2 matrix, the addition of Si offers a better thermal stability of SiGeSn NCs, while the use of HfO2 matrix results in better passivation of NCs increasing the SWIR photosensitivity at room temperature. These results suggest that SiGeSn NCs embedded in an HfO2 matrix are a promising material for SWIR optoelectronic devices.

Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs

Many emerging opportunities, such as three-dimensional (3D) sensing, biophotonics, and optical data links, call for vertical cavity surface-emitting lasers (VCSELs) that operate in the short-wavelength infrared (SWIR) range. In this paper, we report the use of InP distributed Bragg reflector (DBR) mirrors to overcome an impasse in wafer-level mass production of SWIR VCSELs. The DBRs were based on homoepitaxial InP structures and selectively converted through electrochemistry into quarter-wavelength stack structures of alternating nanoporous (NP) and nonporous InP layers with a record index contrast (Δn∼1.0) and near-unity reflectivity. We demonstrated VCSEL operation at both 1380 and 1550 nm from two separate structures prepared on InP substrates using NP–InP DBRs as the bottom mirror and dielectric DBRs as the top mirror. Room temperature continuous-wave (CW) operation of SWIR VCSELs was successfully achieved at both wavelengths with a threshold current density below 2kA/cm2, greater than milliwatt optical output, and a peak power conversion efficiency of 17%. Our work provides strong evidence that the decades-old challenge, in preparing an InP-compatible, high-performance DBR to support the SWIR-emitting vertical cavity, has been addressed and is poised to enable new applications.

Short wavelength infrared (SWIR) reflectance spectroscopy of alteration minerals of Qibaoshan ore district, Shandong Province, China

Qibaoshan is a recently discovered ore district including a significant epithermal deposit; it has three different types of deposits that have been developed in the Qibaoshan subvolcanic complex, including Jinxiantou copper–gold deposit, Qibaoshan polymetallic epithermal deposit and Diaoyutai pyrite deposit.The characteristics of these deposits and geochronological studies indicate that they may belong to the same mineral system. To study the relationship between the deposits and to determine potential for deposits under cover, surface alteration mapping by short-wave infrared spectroscopy (SWIR) analyses was conducted on the ore field. The results showed that the Jinxiantou copper–gold deposit has illite ＋ chlorite alteration, and the Qibaoshan deposit has illite + chlorite alteration as vein halos and gradually transitions outwards to montmorillonite alteration. Illite alteration is widely developed in the Qibaoshan ore field.Study of the spectral characteristics of illite in the east of the ore district showed it has a lower wavelength Al-OH absorption peak position (Pos2200) and higher illite crystallinity (IC) value and shows a trend of gradually decreasing Pos2200 and increasing IC to the west, indicating that the inferred heat center in the eastern ore district may be the center of hydrothermal activity. The Qibaoshan ore district contains a porphyry-epithermal hydrothermal mineral system, and the east of the ore district may have potential for discovery of porphyry deposits.

Rational ligand design for enhanced carrier mobility in self-powered SWIR photodiodes based on colloidal InSb quantum dots.

Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in short-wavelength infrared (SWIR) imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by reliance on restricted elements (RoHS). However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand engineering for improving the in-plane conductivity of the QD assembled films. Here, we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing the conventional ligand (i.e., oleylamine) with sulfide, the interparticle distance between the CQDs was shortened from 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light. Furthermore, the use of sulfide ligands resulted in a low dark current density (∼nA cm-2) with an improved EQE of 18.5%, suggesting their potential use in toxic-based infrared image sensors.

NaGdF4:Yb, Er, Tm Upconversion Nanoparticles for Bioimaging in Shortwave-Infrared Range: Study of Energy Transfer Processes and Composition Optimization

Upconversion nanoparticles are promising for many applications. For triple-doped nanoparticles (NPs), the luminescence intensity shows a non-linear dependence on the rare-earth ion concentration, making it difficult to obtain bright phosphors with high energy output. We investigated the energy transfer processes in β-NaGdF4:Yb-Er-Tm NPs and considered strategies for increasing the thulium luminescence intensity, in particular, the use of core–shell structures. The luminescence spectra were analyzed in the short-wavelength infrared (SWIR) and visible (VIS) regions. The Er3+ and Tm3+ luminescence lifetimes in the VIS region were measured to study the energy transfer processes between the active ions. The quenching of the Tm3+ luminescence in the SWIR region was observed. However, both Er3+ and Tm3+ luminescence bands were observed in the VIS range. We attribute these effects to energy transfer between Tm3+ 3F4 → 3H6 and Er3+ 4I13/2 → 4I9/2, which occurs due to overlap of Er3+ and Tm3+ luminescence bands, and also to competition between Er3+ and Tm3+ for energy transfer from Yb3+. For core–shell NPs, when Tm3+ and Er3+ are separated into adjacent layers, quenching cannot be avoided, likely due to the mutual diffusion of ions during shell synthesis. The most optimal strategy to obtain luminescence in the SWIR range is to use an inert intermediate shell between the layers containing Tm3+ and Er3+.

(Invited) Applications of Electrochemistry Toward Blue/Green and SWIR-Wavelength VCSELs

Unlike the more established edge-emitting lasers (EELs) with a horizontal Fabry-Perot (FB) cavity, VCSELs have a vertical cavity with highly reflective top and bottom mirrors sandwiching the active region. This design enables wafer-level testing, one- and two-dimensional arrayed integration, and scalability for low- and high-power applications. VCSELs are poised to surpass EELs as a more versatile and intelligent option for semiconductor lasers in the future.Currently commercially available VCSELs only cover the red to near-infrared (NIR) range of 700-1100nm, whereas EELs offer products across a wide spectral range. The optimal active regions for blue and short-wavelength infrared (SWIR) spectra are only supported on GaN and InP substrates, respectively. Lattice-matched, epitaxial mirrors compatible with these two substrates remain major challenges. As a solution, we propose the use of electrochemistry to engineer the refractive index of the material. The innovation is based on the recognition that nanoporous (NP) semiconductor layers can be considered a nanocomposite with nanoscale voids of air uniformly dispersed in a single-crystalline semiconductor, thus rendering a unique way to control the effective optical index with a tunability that is typically un-attainable through epitaxy.We have studied the electrochemistry of semiconductors for applications in photonics, beginning with GaN and most recently with InP. In both material systems, we have discovered a selective porosification process based on the doping concentration. Due to the doping selectivity in EC etching, layers with high doping concentration will be converted to low index nanoporous material with an unprecedented tunability in the refractive index depending on the porosity. Meanwhile, the lightly doped layers remain intact. As a result, highly reflective mirrors were fabricated on GaN and InP substrates with wide stopbands. In this talk, we will provide latest updates in the VCSEL performances in the blue/green and long-wavelength region.

Short-wavelength infrared characteristics and composition of white mica in the Demingding porphyry Cu-Mo deposit, Gangdese belt, Tibet: Implications for mineral exploration

The Demingding Cu–Mo deposit, found in the eastern Gangdese metallogenic belt in China, has a significant exploration potential. Detailed field studies coupled with short-wavelength infrared (SWIR) spectroscopy and electron probe micro analyses (EPMA) identified a total of 15 alteration minerals such as white mica group minerals, chlorite, kandite, and smectite groups. The study also discovered the spatial distribution of alteration zone patterns, including phyllic, propylitic, and intermediate argillic alterations. Furthermore, variations were observed in the Al-OH absorption position (Pos2200) of the white mica group with variable Al-Si-Fe-Mg content. Most of the white micas in the ore zone were muscovitic series, whereas the barren zone contained phengitic series micas. Some micas have undergone a transition to illite due to low-temperature alteration overprinting. The western part of the deposit exhibited lower Pos2200, higher SWIR-IC, and higher Dep2200 values, implying an intense phyllic alteration and higher paleotemperatures. These characteristics suggest that the area is in close proximity to the hydrothermal center and fluid channel. Therefore, it was identified as an exploratory target for buried copper ore bodies. The SWIR spectra of the white mica group can be used for exploration in other similar porphyry deposits. Under acidic conditions, shorter Pos2200 and higher SWIR-IC can be used as indicators for hydrothermal or mineralization centers.

SWIR digital holography and imaging through smoke and flames: unveiling the invisible

Since its inception, digital holography has been mainly carried out using visible light but soon various other regions of the electromagnetic spectrum has been fruitfully explored. The Short Wavelength Infrared (SWIR) region, despite its interesting peculiarities and appealing applications in the imaging field, has not yet been fully investigated in Digital Holography (DH). Here we present a compact and robust SWIR DH setup and demonstrate the peculiar and remarkable advantages offered by SWIR radiation for macroscopic object investigation. In particular, we focus our attention to a specific application, previously demonstrated using Long Wavelength IR DH, that is vision through smoke and flames and demonstrate the great potential of SWIR DH in the field of fire rescue.

Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption

Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS2/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS2/Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS2 and Au; as such, the absorption spectrum can be tuned by altering the thickness of the MoS2 layer. Photocurrent in the SWIR wavelength range increases due to increased absorption, which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~150 µs) and high responsivity (17 mA W−1) at an excitation wavelength of 1550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.

Enhanced Broadband Photodetection with Geometry and Interface Engineered Nanocrystalline Graphite

AbstractPhotodetection across the near‐infrared (NIR) to short‐wavelength infrared (SWIR) spectrum is important for many applications. This study explores photodetection using nanocrystalline graphite (NCG) in a suspended, narrow constriction configuration for improved performance. Bowtie constrictions are fabricated in both suspended and substrate‐supported NCG devices, allowing for accurate comparison. It shows that the suspended constriction enhances the bolometric photoresponse and sensor detectivity by several orders of magnitude compared to the substrate‐supported counterparts, attributed to reduced thermalization and electric field concentration. The suspended configuration preserves a spectrally flat photoresponse while reducing operating voltage through a tailored NCG layer thickness. Chromatic aberration‐corrected photocurrent spectroscopy is used to measure the photoresponse from 1100 to 1700 nm, and diffraction‐limited hyperspectral photocurrent imaging is conducted to measure the local photocurrent generation across the device. Bolometric and photo‐thermoelectric currents are restricted to the suspended central constriction due to electric field concentration and thermal decoupling and the direction of the photocurrents within the sensor is revealed. The experimental data is complemented by simulations of the light absorption and the electric field distribution. This work indicates the importance of geometry and thermal decoupling for boosting device performance, offering promising prospects for sensitive and low‐power NCG‐based photodetectors in the NIR‐SWIR range.

Mapping hydrothermal alteration zones with short wavelength infrared (SWIR) spectra and magnetic susceptibility at the Pulang porphyry Cu-Au deposit, Yunnan, SW China

Mapping hydrothermal alteration zones with short wavelength infrared (SWIR) spectra and magnetic susceptibility at the Pulang porphyry Cu-Au deposit, Yunnan, SW China

RedEye-1: a compact SWIR hyperspectral imager for observation of atmospheric methane and carbon dioxide

We present the development of our first prototype of a compact short-wavelength infrared (SWIR) hyperspectral imager, RedEye-1, designed to observe and measure the concentrations of methane (CH4) and carbon dioxide (CO2) in the atmosphere. It operates in the spectral range of 1588 nm to 1673 nm with a nominal spectral resolution of 0.5 nm and has a total weight of approximately 1.8 kg. We outline the optical design of the instrument, including its fore-optics (telescope), and evaluate its performance using the OpticStudio ZEMAX software. In addition, we explain the spectral and radiometric calibration procedures and present the results. Our preliminary data reduction and analysis revealed a high quality SWIR image and a single path measurement of an atmospheric profile displaying the absorption lines of CH4 and CO2.

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Heavy-metal-free III-V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. We study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm-2, a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm-2).

Investigating the fire-retardant efficiency of intumescent coatings on inclined timber: A study on application strategies and heat transfer mechanisms

The impact of intumescent flame-retardant (IFR) coating location on the fire-resistance of inclined timber samples was studied using a multi-imaging system that integrated visible wavelength, short-wavelength infrared (SWIR), long-wavelength infrared (LWIR), and Schlieren techniques. Weight loss post-initial ignition was monitored using a weight scale, and a scanning electron microscope (SEM) was employed to observe the microstructure of both coated and uncoated surfaces post-burn. Samples were inclined at 30˚, 45˚ and 60˚ to study the effects of inclination on fire-retardant efficiency. Four coating strategies were compared: top surface, bottom surface, one side surface, and both side surfaces, against an uncoated control. Quantitative results revealed significant reductions in burning intensity and fire spread when coating was applied to the bottom surface and both side surfaces, attributed to the inhibition of convective heat transfer from underneath the timber samples. The mechanisms of this inhibition were considered to be the termination of gas-phase combustion and impediment of pyrolysis product escape. Furthermore, the fire-retardant efficiency diminished with increasing inclination angles, especially for samples coated only on the top or one side. Conceptual models were developed to understand the mechanisms of fire-retardance and heat transfer inhibition. This work offers critical guidance for the application of fire-retardant coatings and may enhance cost efficiency in fire safety, particularly for individual elements of timber structures such as beams, columns, and frames.

(Invited) Applications of Electrochemistry Toward Blue/Green and SWIR-Wavelength VCSELs

The lack of lattice-matched, epitaxial mirrors compatible with GaN and InP substrates greatly hinders the development and mass-production of blue/green and short-wavelength infrared (SWIR) VCSEL, respectively. Here, we propose the use of electrochemistry to engineer the refractive index of the material as a solution. Homoepitaxial distributed Bragg reflector (DBR) formed on GaN and InP substrates has been demonstrated. Meanwhile, electrically injected III-nitride VCSEL using nanoporous DBR was realized under room temperature.

Ionization coefficients and excess noise characteristics of AlInAsSb on an InP substrate

For short-wavelength infrared (SWIR) avalanche photodiodes, a separate absorption, charge, and multiplication design is widely used. AlInAsSb on an InP substrate is a potential multiplication layer with a lattice match to absorber candidates across the SWIR. Our new measurements demonstrate that AlInAsSb on InP is a promising multiplier candidate with a relatively low dark current density of 10−4 A/cm2 at a gain of 30; a high gain, measured up to 245 in this study; and a large differentiation of electron and hole ionization leading to a low excess noise, measured to be 2.5 at a gain of 30. These characteristics are all improvements over commercially available SWIR detectors incorporating InAlAs or InP as the multiplier. We measured and analyzed gain for multiple wavelengths to extract the ionization coefficients as a function of an electric field over the range 0.33–0.6 MV/cm.