Abstract
The lack of lattice-matched, epitaxial mirrors compatible with GaN and InP substrates greatly hinders the development and mass-production of blue/green and short-wavelength infrared (SWIR) VCSEL, respectively. Here, we propose the use of electrochemistry to engineer the refractive index of the material as a solution. Homoepitaxial distributed Bragg reflector (DBR) formed on GaN and InP substrates has been demonstrated. Meanwhile, electrically injected III-nitride VCSEL using nanoporous DBR was realized under room temperature.
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