Magnetoresistance effect (MRE) and Hall effect have been applied to magnetic field sensors. As materials for the field sensor due to MRE, semiconductor compounds and ferromagnetic metals have been used, but graphite materials have not, though graphite exhibits positive magnetoresistance. A purified high quality Kish graphite (KG) exhibits a large transverse magnetoresistance ∆ρ/ρ even at room temperature. KG is a graphite flake precipitated from molten iron at high temperatures [1]. When the flakes are made at a very high temperature above boiling point of iron and purified carefully, they have higher crystallinity than that of HOPG and exhibit a nature very similar to single crystal graphite. In the present study, therefore, a sensitive magnetic field sensor was tried to prepare using such KG flakes. On the MRE sensors, a magnetic field is measured as a voltage change ∆V induced by the magnetic field under a constant electric current: ∆ρ/ρ = ∆V/V. ∆V increases with the increase of the sample voltage V under zero magnetic field, if the defect concentration in the sample does not increase with increasing V. V increases with the increase of current, sample length and sample thickness. However, the power W increases with increasing current I as W = IR, where R is the sample resistance, i.e. Joule heat generates and temperature of the sample should rise under a large current flow. In the case of KG, sample sizes are limited because of flakes. Therefore, reducing the sample thickness is important factor to increase V and ∆V in the present study, but a careful treatment for reducing the thickness is needed to increase ∆ρ/ρ, i.e. not to increase the defect concentration.
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