Abstract
Magnetic tunnel junctions with a Ni80Fe20/Ru/Co40Fe40B20 synthetic antiferro-coupled bottom free layer and an MgO barrier layer have been fabricated. Double annealing process was carried out in order to obtain linearity against magnetic field with hysteresis-free resistance response. The effect of the annealing temperature and NiFe thickness in the free layer on the magnetic field sensor performance was investigated. We have observed a very high sensitivity of 25.3%/Oe while keeping linearity.
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