Semiconductor Switching Devices Research Articles

Dual Motor Control using Double Zero Sequence Injection Method in Five Leg Voltage Source Inverter

This paper presents in to Dual Motor Control using double zero sequence injection method in 5- leg voltage source inverter. As industry looking for reducing the semiconductor switching devices, like IGBT/MOSFET’s in dual induction motor control. The main reason behind reducing the switching elements to reduce the weight, cost and size of the components. As conventional inverter require six inverter legs to control two induction motors. In this proposed work five inverter legs used instead of six legs in dual motor control. With this reduced one leg, two switching devices will be reduced and one phase of the inverter leg is common between the two motors, so called five leg inverter (FLI). The main switching methodology used for inverter control is Carrier based Double Zero Sequence Injection Method (DZSM). This Double Zero Sequence Injection Method applied to FLI system is having the one common leg. One of the C Phase modulation signal added to other modulating signals of all phases of other motor respectively. A subsequent each phase degree of freedom is represented by the zero-sequence signal. This paper investigates the independent speed control of dual induction motors at different speeds connected to five leg voltage source inverter system, using MATLAB/SIMULINK Software.

An Open-End Winding BLDC Motor Drive With Fault Diagnosis and Autoreconfiguration

This article proposes a dynamically reconfigurable open-end winding brush-less dc motor drive (OEWBLDCMD). In this drive configuration, open-ended motor phase windings are fed with two voltage source inverters from each end, which are powered with separate battery banks. Power semiconductor switching devices, which constitute the dual-inverter system, are susceptible for the development of open-circuit (OC) fault and short-circuit faults (SCFs) on the fly, seriously hampering the reliability of the drive. This article proposes simple algorithms to diagnose both of these faults. In particular, the SCF detection is essentially preemptive in nature, as the acts of detection and the subsequent circuit-reconfiguration are carried out before the SCF can cause overcurrents in healthy switching devices and damage them. The fault diagnosis algorithms employ simple analog circuits and Hall current sensors, making them inexpensive and reliable. This article also presents the strategies for the dynamic reconfiguration of the power circuit, which ensures that the charge residing in the healthy battery bank is utilized even if the associated inverter develops a fault. The effectiveness of the proposed power circuit, fault diagnosis algorithms, and reconfiguration strategies is assessed with simulation studies and is validated experimentally.

Novel Bipolar-Type Direct AC–AC Converter Topology Based on Non-Differential AC Choppers

This paper introduces a novel H-bridge structured ac–ac pulsewidth modulation (PWM) converter topology based on two-level non-differential ac chopper legs, which can work at the non-inverting and inverting modes for the utility voltage compensation. Compared to the traditional bipolar-type H-bridge ac–ac converter, no bidirectional switches are switched in a complementary manner to overcome the commutation problem due to the delayed response of electronic circuits and semiconductor switching devices. The detailed PWM control signals and operational principles are presented to regulate the output voltage in a bipolar manner. Especially the main advantage is that the proposed ac–ac converter has the same buck/boost operation process for non-inverting and inverting modes, which ensures the continuously average current supply to the low-voltage output side without a high-value capacitor to support power. Additionally, due to the common sharing ground of the input and output, the feature that output can reverse or maintain phase angle with input is supported well. Then, the detailed analysis, design conditions, and experimental verification based on a 1 kW experimental prototype are presented.

Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications

A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage functions.

Evaluation of Undesired Radio Waves Below −170 dBm/Hz From Semiconductor Switching Devices for Impact on Wireless Communications

The spread of undesired radio waves and the development of semiconductor switching devices causes serious noise interference in wireless communication systems. We introduce a system to evaluate the noise interference caused by such switching devices with high resolution. Our evaluation system consists of two parts: a high-resolution noise measurement system and an evaluation of wireless communication performance by system level simulations. The integrated power of undesired radio waves is measured within a 5-MHz bandwidth and can be detected even at an ultra-low power level of -177 dBm/Hz. The lower detection limit of the undesired radio waves is enough to evaluate the impact on wireless communication performance. We evaluated undesired radio waves from a wireless power transfer (WPT) system for charging electric vehicles. In our simulation, at the 840-MHz band, we observed an undesired radio waves level of -143 dBm/Hz near the WPT system that degraded the long-term evolution (LTE) sensitivity to -74 dBm/5 MHz.

Multiphysics Field Co-simulation Research Based on Electric Drive System for a Specific Type of Car

Electric drive systems for new energy cars are complex systems that should have multivariate, strong coupling, and nonlinear characteristics and should also involve the multiphysics field. The singular simulation software used at present in the modeling of electric drive systems cannot simulate the influences of all the physics fields on the operating system. The co-simulation model used in this paper was based on a specific type of car. The motor control algorithm model was built in MATLAB/Simulink, the electromagnetic finite element model of the motor was built in ANSYS EM-Maxwell, and the motor controller hardware circuit was built in ANSYS EM-Simplorer. To make real-time connections among these software platforms, a multi-software co-simulation platform was built, and the co-simulation platform’s simulation results were input into STAR CCM+ software to enable finite element modeling of the motor and running of thermal analysis. When compared with the electric drive system model built using single Simulink software, the simulation results from this co-simulation platform were more realistic and were shown to be closer to reality when the dynamic characteristics of the electric drive system’s power semiconductor switching devices and the motor’s electromagnetic characteristics were considered. Finally, by benchmarking the multiphysics field co-simulation platform simulation results using dyno bench test results, the validity of the co-simulation platform was verified and the development of the multiphysics field co-simulation of the basic electric drive system was complete.

Soft-switching SiC power electronic conversion for distributed energy resources and storage applications

Power electronic conversion plays an important role in flexible AC or DC transmission and distribution systems, integration of renewable energy resources, and energy storage systems to enhance efficiency, controllability, stability, and reliability of the grid. The efficiency and reliability of power electronic conversion are critical to power system applications. One way to enhance the efficiency and reliability of power electronic conversion is soft-switching technology. This paper introduces a generic zero-voltage-switching (ZVS) technique based on silicon carbide (SiC) power device. Using the proposed ZVS technique, all semiconductor switching devices in a power converter can realize ZVS operations. Next, the applications of the ZVS technique in different power electronic conversion systems such as photovoltaic inverters, wind power systems, energy storage systems and flexible AC transmission system devices are discussed. Finally, as an example, the operation performance and efficiency improvement of a SiC metal-oxide-semiconductor field-effect transistor (MOSFET) ZVS back-to-back converter are discussed.

Development of musical solid‐state Tesla coil based on pulse repetition frequency method

AbstractA Tesla coil is a resonant transformer circuit that generates very high voltages that are made to arc through the air. Recently, a solid‐state Tesla coil was produced using semiconductor switching devices. In addition, the solid‐state Tesla coil makes sound by air discharge, and the sound is used in musical devices. In the past, pulse width modulation (PWM) method was used to produce musical solid‐state Tesla coils. However, it is difficult to use the high‐pitch sound and the tone color. This paper investigates the musical solid‐state Tesla coil by using pulse repetition frequency (PRF) method. The proposed musical solid‐state Tesla coil using PRF method provides good sound.

Efficiency Analysis of Vienna Rectifier-Based Grid interface Systems for Low-Power PM WECS

Losses of power semiconductor switching devices used in grid-connected wind energy conversion systems (WECSs) are regarded as one of the main issues to be considered when comparing different types of grid interface systems (GISs). This loss is more highlighted for low-power applications, because it directly affects the reliability and efficiency of the system. Recently, a GIS using Vienna rectifier (VR) as generator-side converter is investigated for a permanent magnet synchronous generator-based WECS. Due to its cost advantage, this reduced switch count rectifier is specifically attractive for low-power applications. In this study, the analytical relations for switching and conduction losses of a VR-based GIS are derived and compared to conventional back-to-back systems. As for the grid-side converter, two types of inverters, conventional six-switch inverter and B4 inverter, are considered and the efficiency of GIS is investigated analytically. In order to derive the loss equations for VR, a new current PWM method is presented explaining the formulas required for its implementation. Finding the relations for switching loss and efficiency, different GISs are compared and the most efficient ones are determined for different ratings. The GISs are also simulated, and their switching power losses for different operating points are shown.

Performance Analysis of Multilevel Inverter with Reduced Number of Switches

Multilevel inverters are mainly used in high power and medium voltage applications to reduce the required voltage rating of the power semiconductor switching devices. Nowadays multilevel inverters are also preferred for various applications regardless of the power ratings because they can essentially realize lower harmonics with lower switching frequency and lower electromagnetic interference (EMI). However, it has some disadvantages such as increased number of components, complex Pulse Width Modulation control method, and voltage balancing problem. In this paper a new topology of cascaded multilevel inverter using reduced number of switches is introduced resulting in higher output voltage levels. There era five series connected H-bridges and the DC voltage is given in the ratio n0: n: n3:2n2:10n. The output voltage having 123 levels is obtained (61 positive voltage levels, 61 negative voltage levels and zero voltage levels). Reduced Total Harmonic Distortion (THD) makes them useful for electric vehicle, FACTS and has given option for various power applications. The proposed topology results in reduction of cost and has simplicity of control system. Therefore, the overall cost and complexity are greatly reduced particularly for higher output voltage levels.

An Eight-Switch Five-Level Current Source Inverter

This paper proposes an eight-switch, three-phase, five-level current source inverter (CSI), which employs only one traditional H6 inverter and two shunt branches at the dc side to realize the five-level switching. The corresponding space-vector-modulation (SVM) strategy for the proposed CSI topology is also presented, which uses the two shunt-connected power switches to add certain special modulation-state segments to ensure the switching instants completed under lower current stresses and lower power dissipation. Compared with the state-of-the-art CSI solutions, the proposed topology has a comparable hardware cost as the three-level H6 CSI, while outputs five-level currents. The low-output total harmonic distortion (THD) may help to reduce the sizes of the passive components in the system, and the modulation scheme reduces the switching and conduction losses of the semiconductor switching devices in the H6 CSI module, which can make it possible to increase the output current rating of the system in a certain degree. Simulation and experimental results verified the performance of the proposed CSI.

EMI Suppression of High-Frequency Isolated Quasi Z-Source Inverter Based on Multi-Scroll Chaotic PWM Modulation

The high frequency isolated quasi Z-source inverter is a new type of inverter, which is suitable for photovoltaic generation system because of its high lift to voltage ratio, transient bridge direct access and electrical isolation.With the increase of its power density, the working frequency of its semiconductor switching devices is increasing. Switching devices in high-frequency states generate a large amount of electromagnetic noise, affecting the normal operation of surrounding electrical equipment and threatening the stability of the power grid. For the optimization of electromagnetic compatibility of high frequency isolation quasi Z-source inverter, using pulse width modulation (PWM) chaotic modulation technology, put forward using Chen multi-scroll chaotic system and traditional PWM are combined, using the new PWM control technology can inhibit electromagnetic interference (EMI) from the noise source, effectively reduce the high frequency isolation quasi Z-source switch frequency and its harmonics noise power, and optimize the total harmonic distortion (THD) of the output current by analyzing the chaotic modulation coefficient. Finally, the correctness of the theory is verified by Saber simulation and circuit test. This paper can provide guidelines for the electro magnetic compatibility (EMC) design of the high frequency isolated quasi Z-source inverter and provide the theoretical basis for the EMI optimization design of the power electronic system.

Equivalent circuit model of high power density SiC converter for common-mode conducted emission prediction and analysis

High power density is the primary design consideration for power converters in more electric aircraft (MEA) to meet both space and weight requirements. Therefore, wide bandgap (WBG) semiconductor switching devices, such as SiC, have been chosen to push the switching frequency of the power converter further for size and weight reduction. To meet power quality and conducted emission requirements, a LCL filter is necessary between the converter output and the power grid. With the power switching devices operating at higher frequency, the parasitic effects of various key circuits of the converter cannot be ignored and must be accounted for in the simulation model. This paper describes a complete equivalent circuit model that includes these effects of DC bus-bar, power semiconductor device, gate driver and LCL filter. With the comprehensive model, common-mode (CM) conducted emissions can be predicted and evaluated during the design phase for performance optimization purpose.

Новые защитно-коммутационные аппараты переменного и постоянного тока

The article considers the relation between the new technologies of components and the level of AC and DC equipment sets. It is pointed out that switching and protection apparatuses and semiconductor devices are the key components for development of low- and medium-voltage electrical equipment sets. The data and characteristics of switching and protection apparatuses made on the basis of vacuum and SF6 circuit breakers are presented. The advantages of constructing hybrid low- and medium-voltage devices by using a combination of vacuum circuit breakers, controlled surge arresters, and overvoltage suppressors that can be used in multi-substation DC cable networks (MDCN) are pointed out. The domestically produced light-activated thyristors, thyristors, and IGBT modules may serve as a basis for constructing low- and medium-voltage cable MDCNs.

Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semiconductor switch under intrinsic absorption.

High-power photoconductive semiconductor switching devices were fabricated from a high-purity, semi-insulating 4H-SiC wafer. A highly n-doped GaN subcontact layer was inserted between the contact metal and the high-resistivity SiC wafer. The minimum ON-state resistance of the device was less than 1ohm when the energy of a 355nm laser was 10.5mJ with a bias voltage of 6kV. The maximum device lifetime is 3151 pulses, after which the device completely fails. The failure mechanisms are determined using several analysis methods. Under a strong electric field, the failure mechanism differs for the two electrodes. Near the edge of the anode electrode, the switch is damaged due to the thermal stress caused by impact ionization. At the edge of the cathode electrode, the electrode erosion is the main reason for the failure to operate for long periods of time. These two different damage mechanisms are both important factors influencing the device performance. The electron avalanche breakdown at the edge of the anode electrode causes the formation of cracks between the electrodes, which is the root cause of the switch failure.

Selective Harmonic Elimination Strategy in the Multilevel Inverters for Grid Connected Photovoltaic System

In recent years, power electronic converters are widely used in the industrial as well as domestic applications for the control of power flow. The topologies of multilevel inverter have several advantages such as high output voltage, lower THD and reduction of voltage ratings of the power semiconductor switching devices. The objective of the work is to design multilevel inverters for PV applications integrated in distribution grids so as to reduce THD and to improve the power quality. The proposed control strategy ensures an implementation of SHE modulation for a 5 to 11 levels. This technique is a method to get rid of harmonics by judicious selection of the firing angles of the inverter and eliminates the need of the expensive low pass filters in the system. This article deals with the reduction of harmonics for multilevel converter sources converter for equal and for unequal DC voltages cases.

Straightforward Measurement Method of Common Source Inductance for Fast Switching Semiconductor Devices Mounted on Board

Recent progress of widebandgap semiconductor switching devices enabled extremely high-frequency operation of power converters owing to their ultrafast switching capability. Fast switching may cause large switching noise at the common source inductance, which may increase the switching loss and lead to false triggering. Therefore, measurement of the common source inductance is often intensely required in practical design of fast switching power converters. However, measurement of the common source inductance is difficult, because 1) the wiring path hidden beneath the molded package significantly contributes to this inductance, 2) the mutual inductance between the gating circuit and the power circuit also contributes to this inductance, and 3) this inductance cannot be defined as the stray inductance of a loop wiring path. These difficulties are addressed in this paper by proposing a novel measurement method of the common source inductance. The proposed method is applicable to already-mounted power circuits. In addition, the proposed method offers a straightforward measurement procedure with common instruments, such as a signal generator, an oscilloscope, and voltage and current probes. Along with the measurement principle, this paper also presents an experiment to evaluate the proposed method.

Analysis of Effectiveness of SSSC in Transmission Network using PI Controlled Technique

Today's scenario of power industry is increasing in power demand and limiting in transmission infrastructure. The huge amount of power is transmitted every day over the transmission network. The extension in transmission line facilities may be restricted up to a certain instant due to various reasons like environmental issues, use of land etc. Regulatory pressures also play an important role in the extension of the transmission line and high initial cost can’t be avoided. Hence, there are huge restrictions in the path of extension of the transmission line. Earlier due to unavailability of high speed switching semiconductor devices, the dynamic changes in the lines such as voltage suppression, apparent power flow control cannot be compensated immediately. So, in order to meet these issues, FACTS devices have been introduced. The most important member of this family is Static Synchronous Series Compensator (SSSC), which controls the voltage profile and apparent power flow in the line. In this paper, two machine model system with SSSC have been considered which is simulated in MATLAB/SIMULINK. Also, an improved PI (Proportional & Integral) controlled technique utilizing SSSC model has been introduced to improve the parameters such as voltage and apparent power flow in the line. A comparison of these parameters between a compensated and uncompensated line have been carried out and the results show that the distortion level is also at the satisfactory levels.

Input Voltage Sensorless Duty Compensation Control for a Three-Phase Boost PFC Converter

This paper proposes an input voltage sensorless control algorithm for three-phase active boost rectifiers. Using this approach, the input ac-phase voltages can be accurately estimated from the fluctuations of other measured state variables and preceding switching state information from converter dynamics. Furthermore, the proposed control strategy reduces the input current harmonics of an ac–dc three-phase boost power factor correction (PFC) converter by injecting an additional common-mode duty ratio term to the feedback controllers’ outputs. This additional duty compensation term cancels the unwanted input harmonics, caused by the floating potential between ac source neutral and dc link negative, without requiring any access to the neutral point. A 6-kW (continuous power)/10-kW (peak power) three-phase boost PFC prototype using SiC-based semiconductor switching devices is designed and developed to validate the proposed control algorithm. The experimental results show that an input power factor of 0.999 with a conversion efficiency of 98.3%, total harmonic distortion as low as 4%, and a tightly regulated dc-link voltage with 1% ripple can be achieved.

Reliable Modular Multilevel Converter Fault Detection With Redundant Voltage Sensor

This paper presents a fault-tolerant configuration for the modular multilevel converter (MMC). The procedure is able to detect faults in voltage sensors and semiconductor switching devices, and it can reconfigure the system so that it can keep on operating. Both switch and sensor faults can be detected by comparing the output voltage of a set of submodules (SMs), which is measured by a so-called supervisory sensor, with two calculated reference voltages. Faults in the supervisory sensors are also considered. Sensor faults are overcome by using a measuring technique based on estimates that are periodically updated with the voltage measurements of the supervisory sensors. Additional SMs are included in the arms so that the MMC can bypass a faulty SM and continue operating without affecting the output voltage of the phase-leg. Experimental results obtained from a low-power MMC prototype are presented in order to demonstrate the effectiveness of the proposed techniques.