Abstract
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing the device configuration, the storage can be controlled by magnetic fields in different directions. The parameters of the semiconductors and the resistive switching units are experimentally investigated and simulated to optimize the performance of the devices. The key to increasing the ON/OFF ratio and reducing power consumption is finding a suitable resistance match between the semiconductor and the resistive switching unit. By enhancing the mobility of the semiconductor, the performance of the device can also be significantly improved. This hybrid device provides new insights into the manufacture of magnetic field controlled non-volatile memory devices with potential of integrating computing and storage functions.
Highlights
Magnetoelectronics combines the characteristics of spin and charge to create novel multifunctional devices with broad application prospects.1 Magnetoelectronic devices can be divided into spinbased devices2–6 and magnetic-field-based devices.7–9 In magneticfield based devices, moving carriers which have a large mobility in semiconductors will be affected by Lorentz force under the magnetic field
A hybrid magnetic memory device consists of the following parts, (1) A Hall effect unit (HEU) made of semiconductor (2) Four electrodes in Ohmic contact with the semiconductor (3) Resistive switching unit (RSU) located on top of one of the Hall electrodes
For an ordinary HEU made of semiconductor, the trajectory of electrons is deflected due to the Lorentz force, so that the Hall voltage is proportional to the magnetic field and applied current within a certain range (Fig. 1a)
Summary
Magnetoelectronics combines the characteristics of spin and charge to create novel multifunctional devices with broad application prospects.1 Magnetoelectronic devices can be divided into spinbased devices2–6 and magnetic-field-based devices.7–9 In magneticfield based devices, moving carriers which have a large mobility in semiconductors will be affected by Lorentz force under the magnetic field. A novel magnetic-field-controlled memory device is proposed, in which the Hall effect and the resistive switching effect are coupled. A hybrid magnetic memory device consists of the following parts, (1) A Hall effect unit (HEU) made of semiconductor (2) Four electrodes in Ohmic contact with the semiconductor (3) Resistive switching unit (RSU) located on top of one of the Hall electrodes.
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