Semiconductor Nanowires Research Articles

Mechanically processed, vacuum- and etch-free fabrication of metal-wire-embedded microtrenches interconnected by semiconductor nanowires for flexible bending-sensitive optoelectronic sensors

Abstract We demonstrate the facile fabrication of metal-wire-embedded microtrenches interconnected with semiconducting ZnO nanowires (ZNWs) through the continuous mechanical machining of micrograting trenches, the mechanical embedding of solution-processable metal wires therein, and the metal-mediated hydrothermal growth of ZNWs selectively thereto. The entire process can be performed at room or a very low temperature without resorting to vacuum, lithography, and etching steps, thereby enabling the use of flexible polymer substrates of scalable sizes. We optimize the fabrication procedure and resulting structural characteristics of this nanowire-interconnected flexible trench-embedded electrode (NIFTEE) architecture. Specifically, we carefully sequence the coating, baking, and doctor-blading of an ionic metal solution for the embedding of clean metal wires, and control the temperature and time of the hydrothermal ZNW growth process for faithful interconnections of such trench-embedded metal wires via high-density ZNWs. The NIFTEE structure can function as a bending-sensitive optoelectronic sensor, as the number of ZNWs interconnecting the neighboring metal wires changes upon mechanical bending. It may benefit further potential applications in diverse fields such as wearable technology, structural health monitoring, and soft robotics, where bending-sensitive devices are in high demand.

Advancements in nanoscale coherent emitters: The development of substrate-free surface plasmon nanolasers

The surface plasmon effect can be used to confine electromagnetic fields to a small footprint measuring tens of nanometers. The resultant resonant cavities function as optimal coherent light sources with subwavelength scale configurations. The plasmonic laser sources based on nanoshell structures, in particular, have demonstrated the potential for use in the detection of subcellular mesoscopic molecular structures. However, this structure has a high plasmon dephasing rate, which can increase the threshold of the device, making it difficult to achieve electrically excited structures, thereby rendering them unsuitable as an active component for integration into optoelectronic circuits. A different approach to confining electromagnetic fields involves using a propagating surface plasmon laser structured on a planar layered semiconductor–insulator–metal. This design enables the surface plasmon to propagate along the direction of the nanowire and offers the potential to achieve electrically driven structures by injecting current into the semiconductor nanowire. Consequently, this structure is more effective in guiding energy into integrated optoelectronic circuits compared to the isotropic radiation of nanoshell structures. However, this design also necessitates a supporting substrate, resulting in the actual device volume exceeding the nanoscale and, in some cases, even larger than the size of a cell. This limitation hinders the application of integrated optoelectronic circuits at the micro/nanoscale for bio-applications. To address these challenges, we developed a substrate-free surface plasmon polariton laser. We demonstrated that allowing direct contact between the film and the air significantly reduced the laser threshold. Furthermore, the device maintained its operational capability across different surfaces.

Semiconductor nanowire heterodimensional structures toward advanced optoelectronic devices.

Semiconductor nanowires are considered as one of the most promising candidates for next-generation devices due to their unique quasi-one-dimensional structures and novel physical properties. In recent years, advanced heterostructures have been developed by combining nanowires with low-dimensional structures such as quantum wells, quantum dots, and two-dimensional materials. Those heterodimensional structures overcome the limitations of homogeneous nanowires and show great potential in high-performance nano-optoelectronic devices. In this review, we summarize and discuss recent advances in fabrication, properties and applications of nanowire heterodimensional structures. Major heterodimensional structures including nanowire/quantum well, nanowire/quantum dot, and nanowire/2D-material are studied. Representative optoelectronic devices including lasers, single photon sources, light emitting diodes, photodetectors, and solar cells are introduced in detail. Related prospects and challenges are also discussed.

Cells have the ability to break and chemically modify GaP(As) nanowires.

Semiconductor nanowires are known for their unusual geometry, providing unique electronic and optical properties. Substrates with vertical nanowires have highly non-uniform surfaces, which are attractive in terms of the study of live cells that can interact and be labeled with the wires. Despite several previous works studying cells cultivated over nanowires, questions regarding cell rupture and interaction with the wires remain open. Here, we demonstrate that nanowires can not only penetrate the cell membrane, but even be broken by a cell and trapped inside it. Even after mechanical poration of the membrane manifested by the efficient transfection and delivery of a fluorescent protein encoding plasmid, the cells are found to be viable for 7 days of incubation. The endocytosed wires are then aligned along the nucleus periphery and ousted to pseudopodia with the formation of nanowire-rich fibrils as a result of complex intracellular processes. We demonstrate that endocytosis of the wires may lead to their chemical modification manifested by the red shift of the luminescence spectra. Analysis of the wires' breakdown reveals that the cells can generate forces as high as several hundreds of nN. Using this work, we demonstrate several phenomena with the potential to be used in intriguing methods for intracellular visualization and the development of biointerfaces.

Growth and Characterization of Carbon Nanofibers Grown on Vertically Aligned InAs Nanowires via Chemical Vapour Deposition.

The integration of carbon nanostructures with semiconductor nanowires holds significant potential for energy-efficient integrated circuits. However, achieving precise control over the positioning and stability of these interconnections poses a major challenge. This study presents a method for the controlled growth of carbon nanofibers (CNFs) on vertically aligned indium arsenide (InAs) nanowires. The CNF/InAs hybrid structures, synthesized using chemical vapor deposition (CVD), were successfully produced without compromising the morphology of the pristine nanowires. Under optimized conditions, preferential growth of the carbon nanofibers in the direction perpendicular to the InAs nanowires was observed. Moreover, when the CVD process employed iron as a catalyst, an increased growth rate was achieved. With and without the presence of iron, carbon nanofibers nucleate preferentially on the top of the InAs nanowires, indicating a tip growth mechanism presumably catalysed by a gold-indium alloy that selectively forms in that region. These results represent a compelling example of controlled interconnections between adjacent InAs nanowires formed by carbon fibers.

Cryogenic multiplexing using selective area grown nanowires

Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.

Selective‐Area Growth of Aligned Organic Semiconductor Nanowires and Their Device Integration

AbstractThe simultaneous control of the orientation and position of organic semiconductor nanowires remains a major challenge when integrating them into monolithic devices. In this study, tris(8‐hydroxyquinoline)aluminum(III) (Alq3) molecules are self‐assembled into single‐crystalline nanowires with consistent orientation and predictable positions by selective‐area graphoepitaxial growth. The nanowire orientation is determined by parallel nanogrooves on a periodically modified faceted sapphire surface, and the position is simultaneously defined using a shadow mask. Computational fluid dynamics simulations showed that the mass flow field over the sapphire surface is tailored by the mask, resulting in preferential nanowire nucleation around the hole centers and leaving sufficient free space for the subsequent growth. Accordingly, the number, length, and density of the nanowires can be controlled by adjusting the mask layout. The good alignment and predictable positions of these nanowires facilitated their subsequent device integration, eliminating laborious assembly steps and potential damage after nanowire growth. Measurements from an in situ integrated two‐terminal device based on the Alq3 nanowires revealed that the nanowires exhibit a remarkable negative differential resistance and fast photoresponse in the UV region. Overall, selective‐area graphoepitaxial growth provides a versatile protocol for fabricating site‐ and orientation‐controlled organic semiconductor nanowires for the monolithic fabrication of nanowire‐based devices.

Spin-filtered measurements of Andreev bound states in semiconductor-superconductor nanowire devices

Semiconductor nanowires coupled to superconductors can host Andreev bound states with distinct spin and parity, including a spin-zero state with an even number of electrons and a spin-1/2 state with odd-parity. Considering the difference in spin of the even and odd states, spin-filtered measurements can reveal the underlying ground state. To directly measure the spin of single-electron excitations, we probe an Andreev bound state using a spin-polarized quantum dot that acts as a bipolar spin filter, in combination with a non-polarized tunnel junction in a three-terminal circuit. We observe a spin-polarized excitation spectrum of the Andreev bound state, which can be fully spin-polarized, despite strong spin-orbit interaction in the InSb nanowires. Decoupling the hybrid from the normal lead causes a current blockade, by trapping the Andreev bound state in an excited state. Spin-polarized spectroscopy of hybrid nanowire devices, as demonstrated here, is proposed as an experimental tool to support the observation of topological superconductivity.

Abnormal Photocurrent in Semiconductor p‐n Heterojunctions: Toward Multifunctional Photoelectrochemical‐Type Photonic Devices and Beyond

AbstractSemiconductor p‐n heterojunctions are important building blocks for modern electronic and photonic devices. Further combining semiconductor p‐n heterojunctions with light and electrolyte environment, interesting photoelectrochemical (PEC) phenomena can occur, which enriches the design principles of multifunctional devices. In fact, recent years have witnessed the emergence of PEC‐type photonic devices. For PEC‐type photonic devices, a key to realize multifunctionality is to control the photocurrent polarity of the photoelectrode. In this study, an abnormal photocurrent is reported from p‐InGaN/n‐GaN nanowire heterojunctions under a blue light illumination: although n‐GaN is transparent to the blue light (and thus optical absorption mainly occurs in p‐InGaN) and p‐InGaN in principle can only give negative PEC photocurrent, the detailed experiments show that positive PEC photocurrent can be generated from the p‐InGaN segment due to the existence of the built‐in electric field at the p‐n junction. This study shows a new route to control the photocurrent polarity in a semiconductor p‐n heterojunction photoelectrode. This unveiled role of the built‐in electric field is expected to impact the design of emerging PEC‐type photonic devices, as well as other novel photonic and electronic devices based on semiconductor nanowire p‐n heterojunctions.

Mechanism of silicon-nanowire-diode orientation in DC electric fields

Doped semiconductor nanowires are emerging as next-generation electronic colloidal materials, and the efficient manipulation of such nanostructures is crucial for technological applications. In fluid suspension, pn nanowires (pn NWs), unlike homogeneous nanowires, have a permanent dipole, and thus, experience a torque under an external DC field that orients the nanowire with its n-type end in the direction of the field. Here, we quantitatively measure the permanent dipoles of various Si nanowire pn diodes and investigate their origin. By comparing the dipoles of pn NWs of different lengths and radii, we show that the permanent dipole originates from non-uniform surface-charge distributions, rather than the internal charges at the p–n junction as was previously proposed. This understanding of the mechanism for pn NWs orientation has relevance to the manipulation, assembly, characterization, and separation of nanowire electronics by electric fields.

Pulmonary toxicity and translocation of gallium phosphide nanowires to secondary organs following pulmonary exposure in mice

BackgroundIII-V semiconductor nanowires are envisioned as being integrated in optoelectronic devices in the near future. However, the perspective of mass production of these nanowires raises concern for human safety due to their asbestos- and carbon nanotube-like properties, including their high aspect ratio shape. Indeed, III-V nanowires have similar dimensions as Mitsui-7 multi-walled carbon nanotubes, which induce lung cancer by inhalation in rats. It is therefore urgent to investigate the toxicological effects following lung exposure to III-V nanowires prior to their use in industrial production, which entails risk of human exposure. Here, female C57BL/6J mice were exposed to 2, 6, and 18 µg (0.12, 0.35 and 1.1 mg/kg bw) of gallium phosphide (III-V) nanowires (99 nm diameter, 3.7 μm length) by intratracheal instillation and the toxicity was investigated 1, 3, 28 days and 3 months after exposure. Mitsui-7 multi-walled carbon nanotubes and carbon black Printex 90 nanoparticles were used as benchmark nanomaterials.ResultsGallium phosphide nanowires induced genotoxicity in bronchoalveolar lavage cells and acute inflammation with eosinophilia observable both in bronchoalveolar lavage and lung tissue (1 and 3 days post-exposure). The inflammatory response was comparable to the response following exposure to Mitsui-7 multi-walled carbon nanotubes at similar dose levels. The nanowires underwent partial dissolution in the lung resulting in thinner nanowires, with an estimated in vivo half-life of 3 months. Despite the partial dissolution, nanowires were detected in lung, liver, spleen, kidney, uterus and brain 3 months after exposure.ConclusionPulmonary exposure to gallium phosphide nanowires caused similar toxicological effects as the multi-walled carbon nanotube Mitsui-7.Graphical

Entropy of electron gas in semiconductor nanowires

The thermodynamic potential and entropy of the electron gas of a semiconductor nanowire are obtained. When calculating the entropy of an electron gas with a nonparabolic energy dispersion, the Nelson method was used. The entropy of the electron gas with the value of the chemical potential of the smaller line, which is equal to or greater than the energy of an arbitrary discrete energy level, is studied. An analytical expression for the entropy is obtained in the case when the chemical potential of the electron gas is equal to the energy of the discrete level. The temperature dependences of the entropy of the electron gas of semiconductor nanowires on the degree of nonparabolicity of the energy dispersion law are found.

Nano-structuring metal organic frameworks on semiconductor nanowire arrays for highly sensitive and selective chemical sensing

Chemiresistive sensing of gas molecules has been widely investigated for application in medical diagnostics and environmental monitoring, showing high sensitivity and low limits of detection toward various volatile organic compounds. While metal oxide semiconductors offer numerous advantages, such as ease of fabrication, high sensitivity, and fast response times, they often suffer of high insufficient selectivity. Here, we report the engineering of a low-temperature sensing platform consisting of nanostructured zeolitic imidazolate framework (ZIF-8) metal organic frameworks (MOFs) over InP semiconducting nanowire (NW) arrays. These devices were fabricated via top-down etching of InP NW arrays, aerosol deposition of flame-made ZnO nanoparticles, and their chemical vapor conversion to ZIF-8. The presence of ZIF-8 significantly enhances the device sensitivity over that of the pristine InP NW arrays by providing a high density of adsorption sites and faster reduction kinetics. Our optimal sensors can detect NO2 in a large concentration range from 0.1 to 8 ppm, in addition to showing relatively higher responses toward various gas molecules, including CO2, methanol, ethanol, acetone, and propane, in comparison with pristine InP NW sensors. Given the large family of MOFs with controllable pore size and chemical composition, our findings provide a flexible approach for engineering the selectivity of highly sensitive and miniaturized gas sensors for integration in miniaturized devices.

Полевой транзистор с металлическим затвором

The design and the principle of operation of a field effect transistor based on a semiconductor nanowire with a metal gate is presented and described. The subthreshold slope of the device has been estimated and was shown that it may to exceed the thermionic limit (value e/k_B T).

Absorption of Light in Vertical III-V Semiconductor Nanowires for Solar Cell and Photodetector Applications

Vertical III-V semiconductor nanowires have shown promising absorption of light for solar cell and photodetector applications. The absorption properties can be tuned through the choice of III-V materials and geometry of the nanowires. Here, we review the recent progress in the design of the absorption properties of both individual nanowires and nanowire arrays. Future directions for the research field are proposed.

GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range

Semiconducting nanowires (NWs) fabricated from III–V materials have gained significant attention for their application in advanced optoelectronic devices. Here, the growth of GaAs/GaInNAs/GaAs core-multishell NWs with a triple quantum-well structure, having about 2% N and 20% In, is reported. The NWs are grown via selective area plasma-assisted molecular beam epitaxy on patterned Si(111) substrates with SiO2 mask holes. The nucleation and growth of the GaAs nanowires' core are carried out by Ga-induced vapor–liquid–solid growth at the open holes. Finely controlled, vertically aligned, regular core-multishell NWs with uniform wire length and diameter are obtained with a 96% yield and targeted nitrogen concentrations of 0%, 2%, and 3%. The GaInNAs NWs exhibit a spectral red shift relative to the GaAs NWs' peak. Their emission wavelength increases with the N content reaching up to 1.26 μm, which makes them a promising tool in telecommunication light sources.

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom–up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on the growth masks. Electron beam lithography offers an extraordinary accuracy suited for the purpose. However, this technique is not economically viable for large production as it has a low throughput and requires high investment and operational costs. Nanoimprint lithography (NIL) has the potential to reduce fabrication time and costs significantly while requiring less sophisticated equipment. In this work, we utilize both thermal and UV NIL for patterning substrates for SAE, elucidating the advantages and disadvantages of each lithography technique. We demonstrate the epitaxial growth of Ge and GaAs NWs on these substrates, where we observe high-quality mono-crystalline structures. Even though both processes can produce small uniform structures suitable for SAE, our results show that UV NIL proves to be superior and enables reliable and efficient patterning of sub-100 nm mask features at the wafer scale.

Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation.

Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiOx dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires. Our technique enables customization in the designs of such hybrid nanostructures, while simultaneously performing the nanowire and superconductor growth without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S), NS, and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions as a proof of the usability of these hybrid nanostructures.

Thermally tunable Dyakonov surface waves in semiconductor nanowire metamaterials

The development of engineered metamaterials has enabled the fabrication of tunable photonic devices capable of manipulating the characteristics of electromagnetic surface waves. Integration of semiconductors in metamaterials is a proven approach for creating thermally tunable metamaterials through temperature control of the semiconductor carrier density. In this paper, an interface consisting of an isotropic dielectric material as a cover and an indium antimonide (InSb) nanowire metamaterial as a substrate, is theoretically introduced to investigate the propagation conditions of Dyakonov surface waves in terahertz (THz) frequencies. Various temperature-dependent properties of Dyakonov surface waves in such a geometry is studied, including allowed THz regions, angular existence domain, dispersion relation, directionality, localization degree and figure of merit. The proposed configuration due to the presence of significant birefringence in InSb nanowire metamaterial, has potential applications in THz sensing, imaging and spectroscopy.

Geometry-related optical properties in vertically aligned GaAs nanowires arrays: A study of sizes and embedding medium effects

We investigate the effects of the geometrical sizes and surrounding media on the optical properties of a periodic square array of GaAs nanowires (NWs) as candidates for applications on photovoltaic solar cells as well as sensors. As filling media, different insulator materials such as PMMA, Polycarbonate, Polystyrene and PVP are considered in this study. The simulated system is made of three stacked layers along with two semi-infinite air spaces. The stacked layer system is defined by a transparent layer of Indium Tin Oxide (ITO), the active region of GaAs nanowires array embedded into the filling medium and a substrate of Silicon (Si). The multilayer absorbance is simulated by transfer matrix method (TMM); while the GaAs nanowires surrounded by filling medium is treated as an homogeneous layer whose effective dielectric function is described by Bruggeman effective medium theory. For both s- and p-polarizations at normal and oblique incidences, we observe a typical oscillating behavior in the absorbance/reflectance spectra, regardless the type of embedding medium and sizes investigated. For all investigated sizes, we obtain that the absorbance values decrease for longer wavelength. Greater D/P ratio for longer NWs benefit the light trapping with absorbance values up to 80 per cent in the VIS range. For small variations of the refractive index (dielectric constant) of the filling media surrounding GaAs NWs, we observed a perceptible change in their reflectance spectral values at specific wavelengths. On the other hand, the Brewster angle, calculated at the interface of the ITO layer and the effective embedded nanowires composite, is seen to be sensitive to the D/P ratio size, as far as the wavelength is varied. The above numerical results are in good agreement with those reported in the literature by experimental research and sophisticated FDTD simulations in III–V semiconductor nanowires, which demonstrates that our TMM simulations are adequate approximations to account on optical properties in multilayered structures when homogenization of multilayers is required.