Applications In Semiconductor Manufacturing Research Articles

Single & Multiple Pulse Ablation of Polymeric and High Density Materials with Excimer Laser Radiation at 193NM and 248NM

ABSTRACTThe evolution of the excimer laser from a research tool in the 1970's to the industrial models of the 1980's has opened up numerous applications in semiconductor manufacturing, materials processing, and biological and medical research. Present production-capable, computercontrolled excimer systems with handling equipment enabling efficient automation can now operate for up to 50 million shots before undergoing scheduled maintenance, with fluences remaining within ±10% in most cases. Thus, although many uses for the excimer laser are still researchoriented, production applications are rapidly emerging.

Plasma chemical aspects of magnetron ion etching with CF4/O2

Magnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4 and CF4/O2 with respect to the plasma chemistry and the interaction of the plasma with both the etched substrate and the chamber walls. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE. Sputtering of Al from the electrode produces a substantial deposit of AlFx on the chamber walls, but not on the wafer.

Plasma Chemical Aspects of Magnetron Ion Etching with CF4/O2 and CF4/H2

ABSTRACTMagnetron plasmas are of great current interest for semiconductor manufacturing applications because of their high ion density and low operating pressure. We have studied the properties of a magnetron ion etching system using CF4, CF4/O2, and CF4/H2 with respect to the plasma chemistry and the interaction of the plasma with the etched substrate. The higher dissociation and ionization rates lead to significant changes in the species present in the plasma as compared to a conventional reactive ion etching (RIE) plasma. The F atom concentration in a CF4 magnetron plasma is much higher than in a RIE plasma. The addition of O2 leads to only a small further enhancement and produces a decrease in the Si etch rate. Addition of H2 suppresses the F atom concentration slightly, produces very little C-F polymer, and does not lead to highly selective etching of SiO2 over Si. The highly dissociated species in the magnetron plasma produce less C-F polymer, both on the wafer and on the chamber walls, relative to RIE.