Semiconductor Laser Research Articles

Frequency Noise Characterization of Narrow-Linewidth Semiconductor Lasers: A Bayesian Approach

Frequency Noise Characterization of Narrow-Linewidth Semiconductor Lasers: A Bayesian Approach

Phase-space analysis of a two-section InP laser as an all-optical spiking neuron: dependency on control and design parameters

Using a rate-equation model we numerically evaluate the carrier concentration and photon number in an integrated two-section semiconductor laser, and analyse its dynamics in three-dimensional phase space. The simulation comprises compact model descriptions extracted from a commercially-available generic InP technology platform, allowing us to model an applied reverse-bias voltage to the saturable absorber. We use the model to study the influence of the injected gain current, reverse-bias voltage, and cavity mirror reflectivity on the excitable operation state, which is the operation mode desired for the laser to act as an all-optical integrated neuron. We show in phase-space that our model is capable of demonstrating four different operation modes, i.e. cw, self-pulsating and an on-set and excitable mode under optical pulse injection. In addition, we show that lowering the reflectivity of one of the cavity mirrors greatly enhances the control parameter space for excitable operation, enabling more relaxed operation parameter control and lower power consumption of an integrated two-section laser neuron.

Power Enhancement and Spot Homogenization Design for Arrayed Semiconductor Lasers.

Improving the spot brightness and uniformity of arrangement of the array laser is conducive to ensuring the beam quality of the fiber laser. Based on the light tracing principle, the optical model performance of two common fiber lasers was first analyzed. Then, a novel rotationally polarized optical model with high power and spot uniformity was designed and optimized on the basis of the aforementioned analysis. The results of the evaluation metrics of the multi-indicator optical model show that the spot uniformity of our proposed model improved by 24.03%, the power improved by 0.55%, and the maximum light distance was shortened from 120 mm to 82.58 mm. Further, the results of the coupling tolerance analysis of the optical elements show that the total coupling efficiency was 89.04%. The coupling power and tolerance relationships did not produce degradation compared with the traditional model. Extensive comparative results show that the designed rotationally polarized optical path model can effectively improve the optical coupling efficiency and spot uniformity of arrayed semiconductor lasers.

Achieving high power continuous wave and short pulses of semiconductor laser for use in photodynamic therapy: theoretical work

Achieving high power continuous wave and short pulses of semiconductor laser for use in photodynamic therapy: theoretical work

Fabrication of high power 1.5 µm wavelength InGaAsP/InP BH lasers having dilute waveguide structure

1.5 µm wavelength high power buried heterojunction (BH) semiconductor lasers having dilute waveguide structure have been fabricated. The optical field is dragged down toward the n side of the device by the dilute waveguide layer, lowering the optical confinement factor of the p doped material and active material, which helps to enlarge the laser output light power. Compared with thick InGaAsP cladding layer, the dilute waveguide material is easy to be grown and has higher thermal conductivity. The slope efficiency of the obtained dilute waveguide BH lasers is notably higher than that of the BH lasers having no dilute waveguide. Our studies show that the dilute waveguide structure is promising for the fabrication of high power BH lasers.

“In tune with lasers”

AbstractFreedom Photonics is a subsidiary of Luminar Semiconductor, a US manufacturer of semiconductor lasers, photodetectors and high‐functionality PIC‐based products. EPIC's technology manager for quantum technology and PICs Ivan Nikitski interviewed the company's president, Dr Milan Mashanovitch.

Broadband chaos of an interband cascade laser with a 6-GHz bandwidth.

Near-infrared semiconductor lasers subject to optical feedback usually produce chaos with a broad bandwidth of a few GHz. However, the reported mid-infrared interband cascade lasers (ICLs) only show chaos with a limited bandwidth below 1 GHz. Here we show that an ICL with optical feedback is able to generate broadband chaos as well. The mid-infrared chaos exhibits a remarkable bandwidth of about 6 GHz, which is comparable to that of the near-infrared counterpart. In addition, the spectral coverage in the electrical domain reaches as high as 17.7 GHz. It is found that the chaos bandwidth generally broadens with increasing feedback ratio and/or increasing pump current of the laser, while it is insensitive to the feedback length.

Multiplet cascade in a semiconductor laser with optoelectronic feedback

We report experimentally and theoretically a dynamical scenario involving the formation of pulse multiplet structures, i.e., configurations of two, three, and more pulses per round trip, in a semiconductor laser with positive optoelectronic feedback. The delayed feedback loop includes a cascade of two band-limited amplifiers with nonlinear saturation of sigmoid type. The multiplets appear subcritically in the vicinity of the lasing threshold, resembling gain-switched operation, and evolve with the injection current.

Adiabatic weak coherent MHz linewidth O-band single-photon carrier for low erroneous phase decoding

For weak coherent single-photon secure data communication among short-reach metropolitan intra-/inter-city networks at the O-band (1250-1350 nm), the commercially available semiconductor laser sources are emerging but still suffering from high single-mode-fiber (SMF) loss, broad linewidth, and unstable wavelength. To overcome such disadvantages for enabling the efficient phase-coding link with sufficient secure key rate, a specifically designed adiabatic package with active temperature-/current-feedback control is proposed for the paired O-band MHz-linewidth master-to-slave injection-locked DFBLDs and a polarization-maintaining 1-bit-delay interferometer is stabilized with using a passively adiabatic cell to achieve accurate differential phase decoding. Even though, the phonon-induced phase fluctuation still occurs at rising and falling edges of the decoded long-pattern secure data bits delivered from the slave DFBLD, which is mainly attributed to the intra-cavity heating under excessive free-carrier generation via the master DFBLD injection. To stabilize the differential-phase-shift (DPS) keying protocol, the phase-code distortion caused by over-injection-induced Auger heating is effectively suppressed by reducing the overly biased injection with precise master-injection-level control. The rising-/falling-edge damping distortion of the phase-shift-encoded secure bit-stream envelope is suppressed by appropriately decreasing the DC bias current and adjusting the AC encoding amplitude of the master DFBLD. Such operation reduces the incorrect π phase shift in the injection-locked slave DFBLD biased at optimized below-threshold DC offset, thus allowing single-photon DPS-keying data transmission over 15-km SMF with slightly increasing the single-photon bit-error ratio from <3% (0-km) to 6.2% (15-km).

Study on the microstructure and properties of a laser cladding Fe–Ni–Al coating based on the invar effect

The purpose of this study was to investigate the effect of Al content on Fe–Ni–Al coatings. A Fe–Ni–Al coating was prepared using a semiconductor laser, and the influence of the Al content on the microstructure and properties of the coating was examined. The microstructure of the coating was characterized using scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray spectroscopy. The coefficient of thermal expansion of the coating was measured using a static thermomechanical analyzer. The microhardness and wear performance of the coating were analyzed using a microhardness tester and a wear testing machine. The results were as follows. The addition of Al to the Fe–Ni ferroalloy powder resulted in the in situ formation of an AlNi/Fe–Ni laser cladding layer. When the Al content was low, the coating mainly consisted of γ-[Fe,Ni] austenite. As the Al content increased, the matrix phase structure of the cladding layer transformed into the α phase. Consequently, the Invar effect was gradually compromised, leading to the generation of defects in the coating. When the Al content was 4%, the coating performance improved while maintaining a low coefficient of thermal expansion. At this point, there were relatively few cracks in the cladding layer, and it exhibited the best wear resistance.

Sidewall Corrugation-Modulated Phase-Apodized Silicon Grating Filter.

In this work, phase-apodized silicon grating filters with varying sidewall corrugation width and location were investigated, while the resonance wavelength, extinction ratio, and rejection bandwidth were tuned flexibly. The grating filters with a waveguide width of 500 nm and grating period of 400 nm were fabricated and characterized as a proof of concept. The resonance wavelength of the device can be shifted by 4.54 nm by varying the sidewall corrugation width from 150 to 250 nm. The corresponding rejection bandwidth can be changed from 1.19 to 2.03 nm by applying a sidewall corrugation location offset from 50 to 200 nm. The experimental performances coincide well with the simulation results. The presented sidewall corrugation-modulated apodized grating can be expected to have great application prospects for optical communications and semiconductor lasers.

Cpa-free Yb:YAG thin-disk regenerative amplifier laser with hundreds of watts, hundreds of kHz, and hundreds of picoseconds

This paper introduces a CPA-free Yb:YAG thin-disk regenerative amplifier laser system. The seed pulse is generated by a passive mode-locked picosecond oscillator based on a semiconductor saturable absorber mirror, with a center wavelength of 1030.7 nm, a pulse width of 7.7 ps, and a repetition frequency of 26.3 MHz. After stretched and pre-amplified by an all-fiber front stage, the seed with a pulse width of 201.3 ps and a pulse energy of 15.2 nJ was obtained, then injected into the thin-disk regenerative amplifier. Yb:YAG crystal was chosen as the material for the thin-disk, with 100 μm thickness, 9 mm diameter and 7 at.% doping rate. In order to increase the one-way round-trip gain of the thin-disk regenerative amplifier, a symmetrical dual-pass resonant cavity was designed to double the number of passing through the crystal on a round trip in the regenerative resonant cavity to reduce the times of cycles, intra-cavity loss and improve optical efficiency. We used a 969 nm fiber-coupled semiconductor laser as the pump source to pump the Yb:YAG thin-disk crystal. With zero-phonon line pumping technology, the quantum loss and thermal effect were reduced. In the end, we obtained a regenerative amplification output with an average power of 104.5 W, a repetition frequency of 200 kHz, a pulse width of 143.9 ps, and a spectrum width of 0.39 nm. The amplified pulse had quite good beam quality with Mx2 = 1.09 and My2 = 1.14.

Architecture for Surface-Emitting Lasers with On-Demand Lasing Wavelength by Nanowire Optical Cavities.

Despite the importance and exciting progress of surface-emitting (SE) semiconductor lasers, we have limited choices of lasing wavelength even today. From an application viewpoint, it is desirable to have an architecture that can allow SE lasing in a wide spectral range, based on the need of applications. Herein, we demonstrate a path for SE lasers with lasing wavelength on demand by exploiting III-nitride nanowire optical cavities formed by low-temperature selective area epitaxy (SAE), combined with fine-tuning of substrate patterns and photonic bands. Moreover, in this study, we focus on the device demonstration in the ultraviolet (UV) spectral range, considering the severe lag in developing SE lasers in the UV wavelength range compared to longer wavelengths, e.g., near-infrared (NIR), as well as the potential applications enabled by UV lasers such as solar blind optical wireless communications. Ultralow threshold wavelength-tunable SE UV lasing is achieved by optical pumping. Moreover, SE UV lasing under direct electric current injection is also achieved. This study not only represents an important step in the journey of SE UV laser development but, more importantly, it lays the ground for SE lasers with lasing wavelength on demand, broadly from NIR to UV.

Multi-channel broadband optical chaos generation assisted by phase modulation and CFBG feedback

In this paper, we propose a novel and simple multi-channel broadband optical chaos generation scheme based on phase modulation and chirped fiber Bragg grating (CFBG). Firstly, phase modulation is introduced to generate more new frequency components to broaden the spectrum of the phase chaos. Meanwhile, the accumulated dispersion from CFBG distorts the intensity chaos, converts phase chaos to intensity chaos, and weakens the laser relaxation oscillation. This process would lead to energy redistribution in the power spectrum, effectively increasing the chaotic bandwidth. Then, the wavelength detuning between CFBG and the semiconductor laser is introduced to enhance the chaotic bandwidth further. The experiment results show that the 10 dB bandwidths of the five channels are up to 31.0 GHz, 34.3 GHz, 36.3 GHz, 40 GHz, and 40 GHz, respectively. Note that the maximum bandwidth of the PD in our experiment is limited to 40 GHz. In addition, the multi-channel chaotic signals obtained from the experiment system are used to generate multi-channel physical random numbers. After the post-processing operations, the total rate of five parallel high-speed physical random number generation channels is 4.64 Tbit/s (160 GSa/s × 5bit × 1 channel + 160 GSa/s × 6bit × 4 channels). As far as we know, this is the highest record of using external cavity feedback semiconductor lasers to generate random numbers, which has great potential to meet the security requirements of next-generation Tbit/s optical communication systems.

Laterally coupled photonic crystal surface emitting laser arrays

We propose and investigate a novel coherent laser array design based on laterally coupled photonic crystal surface-emitting lasers (PCSELs). As a new type of semiconductor laser technology, PCSELs have field confinement in a planar cavity and laser beam emission in the surface normal direction. By engineering lateral couplings between PCSELs with heterostructure photonic crystal designs, we can achieve coherent operations from an array of PCSELs. In this paper, we demonstrate coherent operation from a passively coupled PCSEL array design. We fabricated PCSEL array devices on a GaAs-based quantum well heterostructure at a target wavelength of 1040 nm. Experimental results show that the 2-by-2 PCSEL arrays have spectral linewidth of 0.14–0.22 nm. Beam combining performance was characterized by self-interference experiments. Similar coherency between the PCSEL array and single PCSEL device was observed. Our compact PCSEL array designs by passive lateral coupling have potential applications in fields of on-chip photonic computing, quantum, and information processing.

Photodynamic therapy of leukoplakia of the oral mucosa: experience of using method in 223 patients

The aim of this study was to analyze the immediate and long-term results of using photodynamic therapy (PDT) in patients with leukoplakia of the oral mucosa. The retrospective study included 223 patients with morphologically verified leukoplakia of the oral mucosa. Patients received treatment at the hyperthermia and photodynamic therapy department from 2013 to 2023. The average age was 51.9±8.9 years. Clinically, 211 patients (94.6%) had a flat form of the disease, 12 patients (5.4%) had a verrucous form. The photosensitizer (PS), based on chlorin e6, was administered intravenously once in doses of 1.7 to 2.5 mg/kg body weight. Irradiation of pathologically changed lesions was carried out 2-2.5 hours after the end of its infusion, using a semiconductor laser device “UPL PDT”, with a wavelength λ=665±5 nm. The laser radiation dose density varied from 25 to 100 J/cm², the power density from 0.07 to 0.32 W/cm², the duration of one irradiation field - from 2 to 13.5 minutes, depending on its linear dimensions. The severity of adverse reactions was assessed on days 1-30 after treatment using the CTCAE 4.03 scale. The immediate results of treatment were assessed up to 3 months after PDT, with morphological confirmation of the response to treatment. No serious adverse reactions were observed during PS infusion and irradiation. No symptoms of dermal phototoxicity were reported. During control examinations, up to 3 months after irradiation in patients with flat and verrucous forms, the frequency of complete regressions was 97.1% (n=205) and 58.3% (n=6) cases, partial regressions - 2,9% (n=7) and 25% (n=3) of cases, respectively. Objective response rates were observed at 100% and 83.3%, respectively. The period of observation of patients varies from 3 to 120 months. (average 66 months). The frequency of disease relapses during this period was 9%. Patients with partial regression and identified relapse were treated with repeated PDT sessions. PDT is a well-tolerated and effective treatment method for patients with leukoplakia of the oral mucosa, which has significant advantages over traditional methods of treating this precancerous pathology. These include minimal toxicity to the normal tissues surrounding the pathological foci due to the selective accumulation of PS in leukoplakia tissues, a slight risk of serious adverse reactions, the possibility of an outpatient session, the possibility of repeated treatment over a large area of damage and good cosmetic results).

Characterizing Extreme Events in a Fabry–Perot Laser with Optical Feedback

The study of extreme events (EEs) in photonics has expanded significantly due to straightforward implementation conditions. EEs have not been discussed systematically, to the best of our knowledge, in the chaotic dynamics of a Fabry–Perot laser with optical feedback, so we address this in the current contribution. Herein, we not only find EEs in all modes but also divide the EEs in total output into two categories for further discussion. The two types of EEs have similar statistical features to conventional rogue waves. The occurrence probability of EEs undergoes a saturation effect as the feedback strength increases. Additionally, we analyze the influence of feedback strength, feedback delay, and pump current on the probability of EEs defined by two criteria of EEs and find similar trends. We hope that this work contributes to a deep understanding and serves as inspiration for further research into various multimode semiconductor laser systems.

Perovskite Quantum Dots Lasing in Double-Heterostructure through Energy Transfer.

Planar double heterostructures were initially investigated and have been successfully applied in III-V semiconductor lasers due to their excellent roles in confining both the photons and carriers. Here, we design and fabricate a (PEA)2Csn-1PbnX3n+1 (quasi-2D)/CsPbBr3 QD/quasi-2D double-heterostructure sandwiched in a 3/2 λ DBR microcavity, and then demonstrate a single-mode pure-green lasing with a threshold of 53.7 μJ/cm2 under nanosecond-pulsed optical pumping. The thresholds of these heterostructure devices decrease statistically by about 50% compared to the control group with no energy donor layers, PMMA/QD/PMMA in an identical microcavity. We show that there is efficient energy transfer from the barrier regions of the quasi-2D phases to the QD layer by transient absorption and luminescence lifetime spectra and that such energy transfer leads to marked threshold reduction. This work indicates that the double-heterostructure configurations should play a significant role in the future perovskite electrically pumped laser.

Efficient fiber coupling system for simultaneous beam shaping and wavelength combining based on misaligned stepped prism multiplexing

Due to the substantial contrast in the output beam quality between the two directions of the semiconductor laser, efficiently coupling the beam directly into the fiber is difficult. In this study, an efficient shaping method based on step multiplexing of misaligned step prisms is proposed and investigated systematically. First, multiple laser stacks eliminate dark areas to improve the beam quality through the full utilization of the transmission and reflection surfaces of the misaligned stepped prisms, which also improves the efficiency of the stepped prisms. It also simultaneously realizes laser wavelength combining based on reflective surface multiplexing without affecting the quality of the beam on the premise of improving the output power. Finally, the whole beam shaping system is completed without using cut-transform-rearranging prisms. The method couples four groups of laser stacks into a single fiber with a fiber diameter of 400 µm and a numerical aperture of 0.22. It can be seen from the computer-simulated model outputs that the final fiber output power can reach 2255.4 W and that the system as a whole has a light-to-light translation rate of 88.1%.

Research on secure communication technology based on phase conjugate feedback chaotic injection system

This paper presents an experimental scheme using optical method instead of phase conjugate light. We have implemented a phase conjugate feedback semiconductor laser chaotic system based on the four-wave mixing principle through an established optical fiber experimental platform. Based on the high-dimensional wideband chaotic signals generated by this system, we propose a two-channel secure communication scheme based on phase conjugate feedback, and analyze its delay hiding mechanism and synchronization characteristics. The effects of parameter mismatch and injection strength on synchronization performance and communication quality are also considered. Our experimental results show that by adjusting the injection strength and frequency detuning parameters, the system can produce signals with time-delay signature completely suppressed, thus achieving high-quality and high-security communications.