Semiconductor Elastic Medium Research Articles

Semiconductor elastic medium with electromagnetic porosity, photothermal excitation, and the Thomson effect

The Thomson influence on semiconductors can be studied by investigating the connection between the presence of thermoelectric and magnetic fields and porosity and the photothermal transport mechanism. Elastic waves, voids, magnetic fields, and thermoelectric effects in plasma are investigated. The governing equations were analyzed for a uniformly distributed and isotropic medium under two-dimensional [electronic and elastic (plasmaelastic)] deformations. The charge density is considered solely dependent on the induced electric current over time. The Laplace-Fourier transforms method in two dimensions is employed to obtain solutions for the primary variables. The recombination process results in the application of electro-mechanical loads and thermal effects on the free surface of a porous medium. The Laplace-Fourier transformations inversion operations help obtain comprehensive solutions in this study. The effects of porosity parameters and silicon (Si) on a semiconductor porous material are considered, and the resulting physical field distributions are analyzed and represented graphically.

Effect of rotation and magnetic field on a numerical-refined heat conduction in a semiconductor medium during photo-excitation processes

A novel model in photo-thermoelasticity theory is investigated in the paper understudy. The model is obtained theoretically for a semiconductor elastic medium, which is in a rotation case. The interaction between main physical quantities during photothermal transport process is expressed in the governing equations. In addition, the numerical-refined multi-phase-lags relaxation times (thermal memories) are studied in the context of the heat equation when the medium is exposed to an external magnetic field. Moreover, the harmonic wave method in two-dimensional (2D) is introduced during the coupling processes between multi-waves. As such, the complete exact solutions of the main physical fields of semi-infinite semiconductor medium are obtained. Some plasma, mechanical and thermal forces are applied at the outer surface of the elastic medium to determine the unknown parameters. Many comparisons are displayed graphically when the physical constants of silicon (Si) material are used. Theoretical results are discussed under the impact of magnetic field and rotation field.

Thermal conductivity dependent temperature during photo-thermo-elastic excitation of semiconductor material with volumetric absorption laser heat source in gravitational field

In this following work, a theoretical novel model for exited semiconducting medium is studied in the context of photothermal transport process. The dual-phase-lag (DPL) is used to modify the heat (energy) conduction equation when the thermal conductivity is variable during an initial hydrostatic stresses. The thermal conductivity depends on a temperature. The photo-thermoelasticity theory is introduced in a generalized form under the impact of gravitational field with a volumetric absorption laser which considered a heat source. The governing equations are studied in two-dimensional (2D) deformations and are solved using the harmonic wave technique. The considered physical quantities are obtained completely when are applied some thermal and mechanical loads at the free surface of silicon (Si) semiconductor elastic medium. The considered numerical physical fields are obtained graphically and discussed theoretically. The impacts of various variables are illustrated graphically which based on the thermal relaxation time (memories time, DPL theory). The comparisons are made under the effect of heat source, gravity and the variable thermal conductivity graphically.

Plasma-elastic-thermal propagation of a rotator semiconductor magneto-electric medium during microtemperature and photothermal excitation processes subjected to mechanical ramp type

ABSTRACT The overlapping between the initial magnetic field and the generalized thermoelasticity theory during the excited semiconductor medium is studied. The microtemperature process in the context of the photothermal theory (due to the thermal effect) is obtained for the main fields of a rotator medium. The disturbances of the elastic-plasma-thermal waves are investigated in two-dimensional (2D) deformation. The governing equations are discussed in the Fourier and Laplace domains when microelements possess microtemperatures. The basic analytical solutions of the main variables are constructed with Laplace transform. The boundary conditions as well as mechanical ramp and isothermal type are applied on the outer surface of the semiconductor elastic medium to obtain the unknown parameters. The complete solutions of the main variables field in the space-time domain are observed when the inversion techniques are used numerically. The effects of parameters of rotation, thermoelectric coupling, and magnetic field are discussed theoretically and graphically in 2D and 3D.

Thomson effect in thermo-electro-magneto semiconductor medium during photothermal excitation process

ABSTRACT The effect of Thomson heating on semiconductor medium is studied. Analytical discussions in the presence of thermoelectricity and magnetic field, in the context of photothermal transport process, are made. The interactions between plasma, thermoelectric, magnetic and elastic waves are taken into consideration. The governing equations are investigated in two-dimensional deformations of a homogenous, isotropic medium. The density of charge is taken only as a function of time of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied at the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effects of thermoelectric parameter and Thomson parameter.

Analytical solution of a rotating semiconductor elastic medium due to a refined heat conduction equation with hydrostatic initial stress

The semiconductor elastic medium in the context of the photothermal theory under the influence of rotation field is studied. A novel model of the governing equations is investigated due to the refined multi-phase-lags with the thermal relaxation times of the heat equation with the hydrostatic initial stress during transport process of the photothermal phenomenon. The interaction between the multi-waves of elastic-thermal-plasma is obtained. The normal mode method in the two dimensions is applied to obtain the exact solutions of the basic physical quantities under investigation. Plasma, thermal and mechanical loads have been applied on the free surface of the semi-infinite semiconductor elastic medium to get the complete solutions of the basic physical fields. Some comparisons are shown graphically and they are discussed as a function of thermal memories with the variation of some parameters. Silicon (Si) material is used to make the numerical simulation and to display the sensitivity to the variation of the rotation parameter.

Analytical solutions of time-fractional heat order for a magneto-photothermal semiconductor medium with Thomson effects and initial stress

The influence of hydrostatic initial stress in the context of the time-fractional heat order equation is investigated. The strong electromagnetic field is applied at the external surface of semiconductor elastic medium during the photothermal transport process. The Thomson influence appears due to the strong magnetic field. The behavior of wave propagations of the elastic medium is obtained in context of the thermoelectricity theory with initial stress. The governing main equations are taken in two dimensions to describe the interaction between elastic-thermal-plasma and electromagnetic waves for fractional cases. The density of charge is studied as a function of time only when the electric current is induced. The separation of variables is used as a mathematical technique to obtain the exact solutions of the distributions of physical quantities under investigation. Some mechanical, thermal, plasma and magnetic conditions are applied at the free surface elastic medium. A numerical simulation is used to obtain physical quantities distributions graphically and discussed theoretically in various fractional cases.

Effect of variable thermal conductivity of semiconductor elastic medium during photothermal excitation subjected to thermal ramp type

In this problem, the photothermal excitation processes and thermal conductivity of a semiconducting elastic medium due to the change in the temperature effect are studied. The dual-phase-lag (DPL) model and Lord–Shulman (LS) theory are used to formulate and discuss the one-dimensional governing equations of the problem. The thermal ramp type is applied to the load-free surface of the medium. The complete solutions for some physical fields are obtained using the Laplace transform method. Comparisons between the results of thermal memory and variable thermal conductivity are also introduced. The effects of the medium physical fields are illustrated and discussed graphically.

Response of Thermo- Electro-Magneto Semiconductor Elastic Medium to Photothermal Excitation Process with Thomson Influence

The effect of Thomson heating of semiconductor medium is studied. Analytical discussions are made in the presence of thermoelectricity theory and magnetic field in context of Photothermal transport process. The interactions between plasma, thermoelectric, electromagnetic and elastic waves are taken into consideration. The governing equations are investigated in two dimensional deformations of homogenous, isotropic medium. The density of charge is taken as a function of time only of the induced electric current. The normal mode technique is used to obtain the physical quantities field under investigation. Some electro-mechanical loads and thermal effect through recombination process are applied on the free surface of semiconductor elastic medium. The distributions of physical fields in this phenomenon are discussed and represented graphically. The results have been discussed under the effect of thermoelectric parameter and Thomson parameter.

Effect of magneto-rotator-diffusive waves on the photothermal excitation medium of a dual-phase-lag model and variable thermal conductivity

The thermal variable conductivity of a rotator semiconductor elastic medium is investigated. The medium is exposed to beams of light and an initial external magnetic field during a diffusion process. The governing equations cover the overlapping between the wave propagations of mechanical, thermal, plasma and mass diffusion distributions. The reflection wave will be obtained in the context of the thermoelasticity theory and photothermal theory. The harmonic wave analysis is used to obtain the coefficient ratios of reflection analytically of the incident wave (CI) and incident rotational wave. On the free surface of the semiconductor medium, some mechanical, plasma and thermal loads are applied to observe the physical quantities of this phenomenon. The different values of the amplitude of reflection coefficient ratios and the incidence angle are obtained numerically and shown graphically. The comparisons between the obtained results will be studied under the influence of the magnetic field, the variable thermal conductivity and rotation.

Photothermal excitation processes with refined multi dual phase-lags theory for semiconductor elastic medium

The aim of this investigation is to study a refined multi-phase-lags generalized thermoelasticity theory and coupled plasma theory for a semi-infinite semiconductor elastic medium. The model is studied in context of the Photothermal transport process for isoropic homogenous two dimension medium. The governing equations describe the interaction between elastic-plasma-thermal waves. The normal mode technique is used to get the exact solutions analytically of main physical quantities under investigation. The thermal-plasma and mechanical loads are applied at the free surface of semiconductor medium to obtain the complete solution of the temperature, displacement, stresses and carrier density distributions. Some special cases have been obtained. Results will be displayed graphically and discussed. Comparisons are made between the different theories in thermoelasticity.

Response of electromagnetic and Thomson effect of semiconductor medium due to laser pulses and thermal memories during photothermal excitation

In this article, the novel mathematical model under the effect of Thomson heating of a semi-infinite semiconductor elastic medium is expressed. The thermoelasticity theory is applied in the presence of magnetic field when the medium illuminated by a laser pulse in context of photothermal excitation. The discussions are focused on studying the overlapping between plasma, thermal, electro-magnetic and elastic waves when they propagated in the medium. The two dimensional (2D) deformations is used in the governing equations when the medium is homogenous and isotropic. The charge density of induced electric current is expressed for a time functionally only. The physical fields are obtained when use the normal mode technique with some thermal, mechanical and plasma loads occur at the free surface of elastic semi-infinite semiconductor medium. The numerical calculations of physical field's distributions are discussed and shown graphically under the effect of Thomson parameter.

The influence of variable thermal conductivity of semiconductor elastic medium during photothermal excitation subjected to thermal ramp type

In this article, the photothermal excitation and thermal conductivity of a semiconducting elastic medium due to variable temperature effect are studied. The dual-phase-lag (DPL) model and Lord-Shulman (LS) theory are used to formulate and discuss the one dimensional governing equations of the problem. The thermal ramp type and traction free at the free surface are applied, in the context of the photogenerated (plasmaelastic) processes. The complete solutions for some physical fields are obtained using the Laplace transform method. Comparisons between the results of thermal memory and variable thermal conductivity are also introduced. The effects of the medium physical fields are illustrated and discussed graphically.

A Magneto-Photothermal Theory of a Semiconductor Media Due to Pulse Heat Flux and Volumetric Heat Source with Initial Stress

In this investigation, the effect of magnetic field, initial stress and volumetric heat source of semiconductor elastic medium is studied. The thermal memory (relaxation times) is taken into account in the case of studying the coupling between the photothermal excitation process and the generalized thermoelasticity theory. The problem is described in cylindrical coordinates by one-dimensional equations under the effect of pulse heat flux. The interaction between plasma (carrier density), thermal field (temperature) and elastic waves is investigated. Laplace transform technique is used to get analytical solutions of some of the main physical quantities. The gradient temperature and some mechanical forces are applied on the cylinder, and Fourier series expansion is used as a numerical method to obtain the complete solutions of the physical variables in the time-domain. The silicon material is an example of semiconductor which is used for numerical simulation work. The results of the obtained physical variables are and illustrated graphically and discussed.

Thermomechanical Response Model on a Reflection Photothermal Diffusion Waves (RPTD) for Semiconductor Medium

The generalized model for plasma, thermal and elastic waves under thermo mechanical response model of a reflection-photo-thermal-diffusion (RPTD) for semiconductor material has been applied to determine the carrier density, the displacement, the temperature, diffusion and the stresses in a semiconductor elastic medium. The reflection coefficient ratios of incident wave (CI) were analytical obtained by using the method of harmonic wave. For a semiconducting elastic material like silicon, variations of the amplitude of reflection coefficient ratios with the angle of incidence are graphical shown. Numerical results show the influence of thermoenergy coupling parameter, the thermoelectric coupling parameter and the complex circular frequency with variations of thermal relaxation times on reflection coefficient ratios.

Effect of variable thermal conductivity and rotation of semiconductor elastic medium through two-temperature photothermal excitation

In the present investigation, a novel model of a rotating elastic semiconductor medium in the context of photothermal excitation is presented. This phenomenon has been studied using a two-temperature theory under the influence of hydrostatic initial stress. The governing equations are taken under the effect of variable thermal conductivity, which depends on temperature. The variable thermal conductivity has been observed as a linear function of temperature. The normal mode analysis is used to obtain the distributions of thermodynamic temperature, displacement, stress force, carrier intensity and the conductive temperature analytically. The linearity form of the physical quantities is taken into consideration. The mechanical forces and thermally insulated conditions are applied. The numerical simulation results are discussed and obtained graphically.

A novel model for photothermal excitation of variable thermal conductivity semiconductor elastic medium subjected to mechanical ramp type with two-temperature theory and magnetic field

This article focuses on studying the dependence of the thermal conductivity of a semiconducting medium on temperature in context of photothermal transport process and variable thermal conductivity, chosen to be linear function in temperature. The effect of the initial magnetic field is introduced in the problem governing equations with the two-temperature theory. The complete solution in one dimension is obtained using Laplace transform technique. The thermal heating ramp type and mechanical load throughout the elastic-photothermal excitation are considered in the problem boundary conditions. Some physical fields are obtained by using numerical inversion of the Laplace transform and Riemann-sum approximation method. The thermo-dynamical temperature, conductive temperature, displacement, strain, normal stress and carrier density are discussed and shown graphically with some comparisons.

Analytical solution of fractional order heat equation under the effects of variable thermal conductivity during photothermal excitation of spherical cavity of semiconductor medium

In this investigation, the fractional model of heat equation in a semiconductor elastic medium with a spherical cavity is given. The model will be studied in one dimension with the influence of variable thermal conductivity which depends on the temperature. The medium has been investigated during the photothermal transport processes. The system of equations will explain the interference between the plasma–elastic–thermal waves. Laplace transform is applied to solve the governing equations. The complete solutions of main variables are obtained by using a numerical method based on Fourier series expansions. The thermal ramp type is applied on the inner surface of the cavity to obtain the physical quantities under investigation. The numerical computations of main physical quantities are illustrated and represented graphically. The time fractional order and the variable thermal conductivity have a great effect in main physical quantities.

Effect of Variable Thermal Conductivity during the Photothermal Diffusion Process of Semiconductor Medium

In this problem, we study the effect of variable thermal conductivity, which depend on temperature in the context of Photothermal diffusion (PTD). The PTD process is applied with thermoelasticity theory in chemical action. The model introduced describes the interaction between elastic-thermal-plasma waves, which based on the material properties of semiconductor elastic medium. The Laplace transform is used to solve the governing equations in one dimension of a thin circular plate. Some new constant will be appearing during the theoretical discussion. The mechanical forces and thermal loads are applied on the free surface of semiconductor to obtain the physical fields. The complete solutions in time domain are observed by using a numerical approximation method. The physical fields with some comparsions are presented analytically and graphically.

Plasmaelastic and thermoelastic waves in semiconductors

The system of coupled plasma and elastic wave (plasmaelastic wave) and thermal and elastic wave (thermoelastic wave) equations are analyzed. The treatment considers a finite semiconductor elastic medium with isotropic and homogeneous thermal and elastic properties. The analysis of the coupled hyperbolic system of plasma, thermal and elastic equations, for a typical photothermal configuration with a semiconductor sample shows, that for various conditions, the different plasmaelastic and thermoelastic wave modes exist.