Abstract
A novel model in photo-thermoelasticity theory is investigated in the paper understudy. The model is obtained theoretically for a semiconductor elastic medium, which is in a rotation case. The interaction between main physical quantities during photothermal transport process is expressed in the governing equations. In addition, the numerical-refined multi-phase-lags relaxation times (thermal memories) are studied in the context of the heat equation when the medium is exposed to an external magnetic field. Moreover, the harmonic wave method in two-dimensional (2D) is introduced during the coupling processes between multi-waves. As such, the complete exact solutions of the main physical fields of semi-infinite semiconductor medium are obtained. Some plasma, mechanical and thermal forces are applied at the outer surface of the elastic medium to determine the unknown parameters. Many comparisons are displayed graphically when the physical constants of silicon (Si) material are used. Theoretical results are discussed under the impact of magnetic field and rotation field.
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