Semiconducting Transition Metal Dichalcogenides Research Articles

Editors’ Choice—Atomic Layer Etching of Tungsten Disulfide Using Remote Plasma-Induced Oxidation and Wet Etching

WS2 is an emerging semiconductor with potential applications in next-generation device architecture owing to its excellent electrical and physical properties. However, the presence of inevitable surface contaminants and oxide layers limits the performance of WS2-based field-effect transistors (FETs); therefore, novel methods are required to restore the pristine WS2 surface. In this study, the thickness of a WS2 layer was adjusted and its surface was restored to a pristine state by fabricating a recessed-channel structure through a combination of self-limiting remote plasma oxidation and KOH solution etching processes. The reaction between the KOH solution and WOX enabled layer-by-layer thickness control as the topmost oxide layer was selectively removed during the wet-etching process. The thickness of the WS2 layer decreased linearly with the number of recess cycles, and the vertical etch rate was estimated to be approximately 0.65 nm cycle−1. Micro-Raman spectroscopy and high-resolution transmission electron microscopy revealed that the layer-by-layer etching process had a nominal effect on the crystallinity of the underlying WS2 channel. Finally, the pristine state was recovered by removing ambient molecules and oxide layers from the surface of the WS2 channel, which resulted in a high-performance FET with a current on/off ratio greater than 106. This method, which provides a facile approach to restoring the pristine surfaces of transition-metal dichalcogenide (TMDC) semiconductors with precise thickness control, has potential applications in various fields such as TMDC-based (opto)electronic and sensor devices.

Valley polarization in transition metal dichalcogenide layered semiconductors: Generation, relaxation, manipulation and transport

In recent years, valleytronics researches based on 2D semiconducting transition metal dichalcogenides have attracted considerable attention. On the one hand, strong spin–orbit interaction allows the presence of spin–valley coupling in this system, which provides spin addressable valley degrees of freedom for information storage and processing. On the other hand, large exciton binding energy up to hundreds of meV enables excitons to be stable carriers of valley information. Valley polarization, marked by an imbalanced exciton population in two inequivalent valleys (+K and −K), is the core of valleytronics as it can be utilized to store binary information. Motivated by the potential applications, we present a thorough overview of the recent advancements in the generation, relaxation, manipulation, and transport of the valley polarization in nonmagnetic transition metal dichalcogenide layered semiconductors. We also discuss the development of valleytronic devices and future challenges in this field.

Chemical Vapor Deposition Syntheses of Wafer‐Scale 2D Transition Metal Dichalcogenide Films toward Next‐Generation Integrated Circuits Related Applications

Abstract2D semiconducting transition metal dichalcogenides (TMDCs), most with a formula of MX2 (M=Mo, W; X=S, Se, etc.), have emerged as promising channel materials for next‐generation integrated circuits, considering their dangling‐bond‐free surfaces, moderate bandgaps, relatively high carrier mobilities, etc. Wafer‐scale preparation of 2D MX2 films holds fundamental significance for realizing their applications. Chemical vapor deposition (CVD) is recognized as the most promising method for preparing electronic‐grade 2D MX2 films. This review hereby summarizes the recent progress in CVD syntheses of wafer‐scale 2D MX2 films and their applications in logic operations, data storage, and image capturing/processing related fields. The first part focuses on the wafer‐scale syntheses of 2D MX2 films through designing homogeneous metal precursor supply routes (e.g., precoating soluble precursor, feeding gaseous precursor, designing independent multisource supply or face‐to‐face metal precursor supply routes). The second part highlights the epitaxial growth of monolayer MX2 single crystals on single‐crystal Au substrates and well‐designed sapphire substrates. The third part introduces various functional device/circuit related applications of CVD‐derived 2D MX2 wafers. Finally, challenges and prospects are discussed from the viewpoints of the controlled synthesis, reliable characterization, and damage‐free transfer of 2D MX2, as well as the fabrication and integration of high‐performance devices.

Hydrogenic spin-valley states of the bromine donor in 2H-MoTe2

In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine BrTe dopant in 2H-MoTe2. Electron spin resonance measurements show that this dopant carries a spin with long-lived nanoseconds coherence time. Using scanning tunneling spectroscopy, we find that the hydrogenic wavefunctions associated with the dopant levels have characteristics spatial modulations that result from their hybridization to the Q-valleys of the conduction band. From a Fourier analysis of the conductance maps, we find that the amplitude and phase of the Fourier components change with energy according to the different irreducible representations of the impurity-site point-group symmetry. These results demonstrate that a dopant can inherit the locked spin-valley properties of the semiconductor and so exhibit long spin-coherence time.

Solution-Processed 2D Transition Metal Dichalcogenides: Materials to CMOS Electronics

ConspectusTwo-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) have demonstrated exceptional potential as materials for future complementary metal-oxide-semiconductor (CMOS) technology. This is primarily because of their atomic thickness and excellent electrical and mechanical properties. With advancements in fabrication technology, electronic devices based on 2D TMD materials have rapidly progressed from isolated units for scientific experimentation to integrated circuits with practical applications. Among the different production methods, the solution-processing of 2D TMD nanomaterial dispersions offers the distinct advantages of low-temperature processing and cost-effective manufacturing for large-scale flexible and wearable electronics. A wide range of 2D nanoflake inks with versatile electronic properties can be assembled into atomic-thick thin films with dangling-bond-free van der Waals interfaces between adjacent nanoflakes. Furthermore, direct printing techniques can easily integrate multifunctional devices, such as n-type and p-type transistors, into CMOS devices and more complex integrated circuits. Despite these benefits and previous accomplishments, the field of solution-processed CMOS electronics using 2D TMD semiconducting materials is in its early stages of development and requires further research. One of the current challenges is the production of scalable and high-purity 2D semiconductor mono- and few layers with large lateral sizes and narrow thickness distribution. The field-effect mobility of solution-processed 2D TMD transistors remains lower than that of the transistors manufactured using mechanical exfoliation and chemical vapor deposition methods. In particular, limited research has been conducted on solution-processed p-type 2D TMD transistors. As a result, solution-processed CMOS devices using n-type and p-type 2D TMD transistors are scarce. In this Account, we provide an overview of the recent progress in the field of solution-processed CMOS electronics employing 2D TMD materials. First, we introduce the basic liquid exfoliation methods, such as sonication-assisted exfoliation and molecular intercalation methods, that are commonly utilized to prepare 2D TMD dispersions. In addition, we discuss the production of monolayer 2D materials, which serve as the building blocks for fabricating atomic-thick thin films. Subsequently, we review the typical techniques for depositing 2D inks, including spin coating, drop casting, and inkjet printing. Furthermore, we outline the thin-film patterning process for each technique, which is crucial for integrating multifunctional materials in CMOS devices. Subsequently, we focus on the recent advancements in solution-processed 2D TMD transistors. Furthermore, we explore the various factors that can improve the performance of the devices with regard to charge transport and charge traps. Afterward, we highlight notable applications of solution-processed CMOS technology, such as logic circuits and ring oscillators. Finally, we provide an overview of the challenges and opportunities in the development of solution-processed 2D materials and the integration of multifunctional devices for the advancement of CMOS electronics. This Account aims to provide a comprehensive guide for readers, offering both a broad overview and an in-depth insight into solution-processed 2D material-based electronics, covering a wide range of topics from the preparation of 2D TMD ink to device fabrication and CMOS applications. Therefore, this Account is expected to drive further progress and advancements in this field and promote the realization of practical applications.

Andreev reflection between aluminum and graphene across van der Waals barriers

We present planar aluminum superconductor–graphene junctions whose hybrid interface is engineered for couplings ranging from tunneling to the strongly coupled regime by employing an atomically thin van der Waals tunneling barrier. Without the vdW barrier, we find Al makes strongly coupled contacts with the fully proximities graphene channel underneath. Using a large band gap hexagonal boron nitride (hBN) barrier, we find the junctions always remain in the weak coupling regime, exhibiting tunneling characteristics. Using monolayer semi-conducting transition metal dichalcogenides (TMDs) such as MoS2, we realize intermediate coupling with enhanced junction conductance due to the Andreev process. In this intermediate regime, we find that junction resistance changes in discrete steps when sweeping a perpendicular magnetic field. The period of the resistance steps in the magnetic field is inversely proportional to the junction area, suggesting the physical origin of our observations is due to magnetic-field-induced vortex formation in the planar junction.

In Situ Exfoliation Method of Large-Area 2D Materials.

2D materials provide a rich platform to study novel physical phenomena arising from quantum confinement of charge carriers. Many of these phenomena are discovered by surface sensitive techniques, such as photoemission spectroscopy, that work in ultra-high vacuum (UHV). Success in experimental studies of 2D materials, however, inherently relies on producing adsorbate-free, large-area, high-quality samples. The method that yields 2D materials of highest quality is mechanical exfoliation from bulk-grown samples. However, as this technique is traditionally performed in a dedicated environment, the transfer of samples into vacuum requires surface cleaning that might diminish the quality of the samples. In this article, a simple method for in situ exfoliation directly in UHV is reported, which yields large-area, single-layered films. Multiple metallic and semiconducting transition metal dichalcogenides are exfoliated in situ onto Au, Ag, and Ge. The exfoliated flakes are found to be of sub-millimeter size with excellent crystallinity and purity, as supported by angle-resolved photoemission spectroscopy, atomic force microscopy, and low-energy electron diffraction. The approach is well-suited for air-sensitive 2D materials, enabling the study of a new suite of electronic properties. In addition, the exfoliation of surface alloys and the possibility of controlling the substrate-2D material twist angle is demonstrated.

Magnetic field control of light-induced spin accumulation in monolayer MoSe2

Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is applied, time-reversal symmetry is broken and the energies of the spin-polarized bands shift, resulting in different bandgaps and dynamics in the K and K valleys. Here, we use time-resolved Kerr rotation to study the magnetic field dependence of the spin dynamics in monolayer MoSe2. We show that the magnetic field can control the light-induced spin accumulation of the two valley states, with a small effect on the recombination lifetimes. We unveil that the magnetic field-dependent spin accumulation is in agreement with hole spin dynamics at the longer timescales, indicating that the electron spins have faster relaxation rates. We propose a rate equation model that suggests that lifting the energy-degeneracy of the valleys induces an ultrafast spin-flip toward the stabilization of the valley with the higher valence band energy. Our results provide an experimental insight into the ultrafast charge and spin dynamics in TMDs and a way to control it, which will be useful for the development of new spintronic and valleytronic applications.

Lattice Reconstruction in MoSe2–WSe2 Heterobilayers Synthesized by Chemical Vapor Deposition

Vertical van der Waals heterostructures of semiconducting transition metal dichalcogenides realize moiré systems with rich correlated electron phases and moiré exciton phenomena. For material combinations with small lattice mismatch and twist angles as in MoSe2-WSe2, however, lattice reconstruction eliminates the canonical moiré pattern and instead gives rise to arrays of periodically reconstructed nanoscale domains and mesoscopically extended areas of one atomic registry. Here, we elucidate the role of atomic reconstruction in MoSe2-WSe2 heterostructures synthesized by chemical vapor deposition. With complementary imaging down to the atomic scale, simulations, and optical spectroscopy methods, we identify the coexistence of moiré-type cores and extended moiré-free regions in heterostacks with parallel and antiparallel alignment. Our work highlights the potential of chemical vapor deposition for applications requiring laterally extended heterosystems of one atomic registry or exciton-confining heterostack arrays.

First principle study of electronic and optical properties of WS2(1-x)Se2x obtained by isoelectronic Se substitution on S-site of monolayer WS2

Two-dimensional semiconducting transition metal dichalcogenides have recently grabbed attention among the researchers, due to their extraordinary electrical, optical and thermal properties. Also, they have shown their suitability for application in digital electronics, photovoltaic cells, Thermoelectric generators and so on. Still, it is desired to precisely control the material properties to expand their scope of application and revamp the device performance. The substitutional doping technique is one of the widely explored processes, which is conventionally used to modulate the material properties. In the present work, the substitutional doping of selenium at the sulfur site within the WS2 sheet, is used indigenously to improve the electrical and optical response of the material. In doing so, electrical and optical properties of such doped materials are studied by employing density functional theory and linearized Boltzmann transport equation by considering the relaxation time approximation. The study has shown an almost linear variation of electronic band gap energy with the doping percentages. Also, the electron and hole mobility were found to be tailored due to the doping. Notably, hole mobility has shown a noticeable improvement at or near 60 percent of selenium doping. In the last section of the current work, the optical properties are extracted for the doped structures. The WS2 monolayer has shown the highest absorption peak near 3 eV. But for the doped materials, absorption peaks are relatively smaller and left shifted in the energy axis due to their low band gap energies.

Theoretical Design of an Mox W1-x S2 /Graphene (x=0.25/0.75) Heterojunction with Adjustable Band Gap: Potential Candidate Materials for the Next Generation of Optoelectronic Devices.

Multicomponent two-dimensional (2D) transition metal dichalcogenides (TMDCs) semiconductors based on adjustable band gap are increasingly used to design optoelectronic devices with specific spectral response. Here, we have designed the Mox W1-x S2 /graphene heterostructure with adjustable band gap by adopting the combination idea of alloying and multiple heterogeneous recombination. The contact type, stability and photoelectric properties of Mox W1-x S2 /graphene heterojunction were investigated theoretically. At the same time, by applying external vertical electric field to Mox W1-x S2 /graphene, the regulate of heterojunction Schottky contact type was realized. The results show that Mox W1-x S2 /graphene heterojunction has broad application prospects in the field of photocatalysis and Schottky devices, and is suitable for being a potential candidate material for next generation of optoelectronic devices. The design of Mox W1-x S2 /graphene heterostructure enables it to obtain the advanced characteristics that are lacking in the one-component intrinsic 2D TMDCs semiconductors or graphene materials, and provides a theoretical basis for the experimental preparation of such heterojunctions.

Microscopic Quantum Transport Processes of Out‐of‐Plane Charge Flow in 2D Semiconductors Analyzed by a Fowler–Nordheim Tunneling Probe

AbstractWeak interlayer couplings at 2D van der Waals (vdW) interfaces fundamentally distinguish out‐of‐plane charge flow, the information carrier in vdW‐assembled vertical electronic and optical devices, from the in‐plane band transport processes. Here, the out‐of‐plane charge transport behavior in 2D vdW semiconducting transition metal dichalcogenides (SCTMD) is reported. The measurements demonstrate that, in the high electric field regime, especially at low temperatures, either electron or hole carrier Fowler–Nordheim (FN) tunneling becomes the dominant quantum transport process in ultrathin SCTMDs, down to monolayers. For few‐layer SCTMDs, sequential layer‐by‐layer FN tunneling is observed to dominate the charge flow, thus serving as a material characterization probe for addressing the Fermi level positions and the layer numbers of the SCTMD films. Furthermore, it is shown that the physical confinement of the electron or hole carrier wave packets inside the sub‐nm thick semiconducting layers reduces the vertical quantum tunneling probability, leading to an enhanced effective mass of tunneling carriers.

Recent Advances in Nanomaterials‐Based FETs for SARS‐CoV‐2 (COVID‐19 Virus) Diagnosis

The emergence of infectious diseases that are quickly spreading, like the coronavirus (COVID‐19), necessitates the development of efficient biosensors that can quickly detect and identify pathogens. It is essential to create sensitive virus detection methods in order to stop a virus from spreading throughout the world. It is determined that field‐effect transistors (FETs) made of nanomaterials are potential candidates for rapid virus identification due to how easily the electronic transport characteristics of such an atomically thin nanomaterial can be affected by perturbations. Various FETs in this review article are investigated that are based on nanoparticles, carbon nanotubes (CNT), graphene, graphene‐oxide, and semiconducting transition metal dichalcogenides (TMDs) WSe2 in order to show that they are promising biosensors in regards to quickly and precisely detect COVID‐19. The conjugation of nanomaterials with proteins enables the direct delivery of antiviral agents to the host cells. This method also minimizes the off‐target effects and enables the targeted interactions. This mechanism has produced encouraging results in regards to sensing or treating COVID‐19. The high surface area and extremely small size of nanomaterials make them crucial in regards to the development of new detection methods. The point‐of‐care test method of detection is quick, simple, and user‐friendly, and it only requires a small amount of a patient's blood. It does not require a laboratory or trained professionals. This overview of the current research that is conducted on nanomaterials will prove to be useful in the process of formulating strategies for the diagnosis, treatment, and vaccination of viruses in opinion. Finally, the conclusion of this review provides a summary of the current challenges and the future prospects.

Local dielectric function of hBN-encapsulated WS2 flakes grown by chemical vapor deposition

Hexagonal boron nitride (hBN), sometimes referred to as white graphene, receives growing interest in the scientific community, especially when combined into van der Waals (vdW) homo- and heterostacks, in which novel and interesting phenomena may arise. hBN is also commonly used in combination with two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs). The realization of hBN-encapsulated TMDC homo- and heterostacks can indeed offer opportunities to investigate and compare TMDC excitonic properties in various stacking configurations. In this work, we investigate the optical response at the micrometric scale of mono- and homo-bilayer WS2 grown by chemical vapor deposition and encapsulated between two single layers of hBN. Imaging spectroscopic ellipsometry is exploited to extract the local dielectric functions across one single WS2 flake and detect the evolution of excitonic spectral features from monolayer to bilayer regions. Exciton energies undergo a redshift by passing from hBN-encapsulated single layer to homo-bilayer WS2, as also confirmed by photoluminescence spectra. Our results can provide a reference for the study of the dielectric properties of more complex systems where hBN is combined with other 2D vdW materials into heterostructures and are stimulating towards the investigation of the optical response of other technologically-relevant heterostacks.

Rydberg Excitons and Trions in Monolayer MoTe2.

Monolayer transition metal dichalcogenide (TMDC) semiconductors exhibit strong excitonic optical resonances, which serve as a microscopic, noninvasive probe into their fundamental properties. Like the hydrogen atom, such excitons can exhibit an entire Rydberg series of resonances. Excitons have been extensively studied in most TMDCs (MoS2, MoSe2, WS2, and WSe2), but detailed exploration of excitonic phenomena has been lacking in the important TMDC material molybdenum ditelluride (MoTe2). Here, we report an experimental investigation of excitonic luminescence properties of monolayer MoTe2 to understand the excitonic Rydberg series, up to 3s. We report a significant modification of emission energies with temperature (4 to 300 K), thereby quantifying the exciton-phonon coupling. Furthermore, we observe a strongly gate-tunable exciton-trion interplay for all the Rydberg states governed mainly by free-carrier screening, Pauli blocking, and band gap renormalization in agreement with the results of first-principles GW plus Bethe-Salpeter equation approach calculations. Our results help bring monolayer MoTe2 closer to its potential applications in near-infrared optoelectronics and photonic devices.

Recognition of dipole-induced electric field in 2D materials for surface-enhanced Raman scattering.

The application of two-dimensional (2D) materials, including metallic graphene, semiconducting transition metal dichalcogenides, and insulating hexagonal boron nitride (h-BN) for surface-enhancement Raman spectroscopy has attracted extensive research interest. This article provides a critical overview of the recent developments in surface-enhanced Raman spectroscopy using 2D materials. By re-examining the relationship between the lattice structure and Raman enhancement characteristics, including vibration selectivity and thickness dependence, we highlight the important role of dipoles in the chemical enhancement of 2D materials.

Semimetal contacts to monolayer semiconductor: weak metalization as an effective mechanism to Schottky barrier lowering

Recent experiment has uncovered semimetal bismuth (Bi) as an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. The contact physics of the broader semimetal/monolayer-semiconductor family beyond Bi/MoS2, however, remains largely unexplored thus far. Here we perform a comprehensive first-principle density functional theory investigation on the electrical contact properties between six archetypal two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors, i.e. MoS2, WS2, MoSe2, WSe2, MoTe2 and WTe2, and two representative types of semimetals, Bi and antimony (Sb). As Bi and Sb work functions energetically aligns well with the TMDC conduction band edge, Ohmic or nearly-Ohmic n-type contacts are prevalent. The interlayer distance of semimetal/TMDC contacts are significantly larger than that of the metal/TMDC counterparts, which results in only weak metalization of TMDC upon contact formation. Intriguingly, such weak metalization generates semimetal-induced gap states (SMIGSs) that extends below the conduction band minimum, thus offering an effective mechanism to reduce or eliminate the n-type Schottky barrier height (SBH) while still preserving the electronic structures of 2D TMDC. A modified Schottky–Mott rule that takes into account SMIGS, interface dipole potential, and Fermi level shifting is proposed, which provides an improved agreement with the density functional theory-simulated SBH. We further show that the tunneling-specific resistivity of Sb/TMDC contacts are generally lower than the Bi counterparts, thus indicating a better charge injection efficiency can be achieved through Sb contacts. Our findings reveal the promising potential of Bi and Sb as excellent companion electrode materials for advancing 2D semiconductor device technology.

Ultrafast electron localization and screening in a transition metal dichalcogenide

The coupling of light to electrical charge carriers in semiconductors is the foundation of many technological applications. Attosecond transient absorption spectroscopy measures simultaneously how excited electrons and the vacancies they leave behind dynamically react to the applied optical fields. In compound semiconductors, these dynamics can be probed via any of their atomic constituents with core-level transitions into valence and conduction band. Typically, the atomic species forming the compound contribute comparably to the relevant electronic properties of the material. One therefore expects to observe similar dynamics, irrespective of the choice of atomic species via which it is probed. Here, we show in the two-dimensional transition metal dichalcogenide semiconductor MoSe2, that through a selenium-based core-level transition we observe charge carriers acting independently from each other, while when probed through molybdenum, the collective, many-body motion of the carriers dominates. Such unexpectedly contrasting behavior can be explained by a strong localization of electrons around molybdenum atoms following absorption of light, which modifies the local fields acting on the carriers. We show that similar behavior in elemental titanium metal [M. Volkov et al., Nat. Phys. 15, 1145-1149 (2019)]carries over to transition metal-containing compounds and is expected to play an essential role for a wide range of such materials. Knowledge of independent particle and collective response is essential for fully understanding these materials.

Valley-optical absorption in planar transition metal dichalcogenide superlattices

In this study, we investigate the optical absorption of a planar superlattice comprising alternatively arranged two-dimensional Transition Metal DiChalcogenide semiconductors. Within a semi-classical model and using the Dirac-like equation in the presence of light interaction as a perturbation, we obtained the governing Hamiltonian. Using this Hamiltonian, we derived a fully analytical relationship for the absorption coefficient of the structure. By calculating the effective mass for different bands and using the Drude-Lorentz model, our approach is able to determine the oscillator strength and the effective refractive index of the structure. We found that the spin–orbit coupling has important effect on the absorption coefficient and energy bands where it reduces the absorption coefficient of the structure from typical value of 11.54 ({10}^{5}{mathrm{cm}}^{-1})–5.937({10}^{5}{mathrm{cm}}^{-1}), also the valence band experiences a significant blue shift, while the conduction band shows minor changes due to spin orbit coupling. Moreover, the role of incident light angle and light polarization were studied in details at different valleys of K and {K}^{^{prime}}. The most important finding is that by changing the polarization of incident light, it is possible to increase the absorption coefficients of K and {K}^{^{prime}} valleys by up to 30 times. For light propagation direction close to perpendicular to the plane of the superlattice, the right-circular polarization is absorbed only by K valley in contrast to the left-circular polarization, which is absorbed by the {K}^{^{prime}} valley. Our model might be used to design newly developed 2D optovalleytronic devices.

Ultrashort pulse generation in erbium-doped fiber lasers in South America: a historical review

This paper reviews the scientific contributions of the last 30 years on erbium-doped fiber laser ultrashort pulse generation in South America. The focus is on contributions authored in South American institutions. It reveals a wide variety of laser cavities, ranging in length from a few centimeters to tens of kilometers, and optical pulses, from tens of femtoseconds to nanoseconds, with fully controlled average and peak powers. Furthermore, different approaches for ultrashort pulse generation using active (synchronous and asynchronous) and/or passive mode-locking techniques are discussed, as well as the employment of nonlinear optical phenomena (Kerr effect) and several two-dimensional nanomaterials as saturable absorbers, such as carbon nanotubes, graphene, graphite, graphene oxide, reduced-graphene oxide, semiconductor transition metal dichalcogenides, and black phosphorus. Finally, the paper revisits and discusses several advances, important milestones, and records on ultrashort pulse generation in erbium-doped fiber lasers, with many essential outcomes attesting to the high quality of research carried out in South America in the field of ultrafast fiber lasers.