Semiconductor Behavior Research Articles

Influence of cobalt doping on structural, optical, and electrical properties of zinc oxide nanoparticles prepared by polymeric precursor method

Cobalt-doped ZnO nanoparticles at different compositions have been obtained by the polymeric precursor method. The nanoparticles were obtained at the working pH from 8.3 to 8.5 and synthesized at 550 °C. The properties were studied using X-ray diffraction (XRD), vibrational spectroscopy (FTIR/Raman), diffuse reflectance absorbance spectroscopy (DR UV–Vis), photoluminescence spectroscopy (PL), scanning electron microscopy (SEM/EDS), and impedance spectroscopy. The lattice parameters were determined at room temperature by Rietveld refinement, confirming single-phase composition with a hexagonal wurtzite structure. FTIR and Raman analyzes identified the characteristic vibrations of the synthesized system and the typical deformations of the wurtzite-type hexagonal structure, corroborating the results obtained from XRD. A redshift in the optical energy band gap (Egopt) was observed with increasing cobalt content compared to the ZnO sample. Considering the doping percentage, Egopt value varied between 3.13 eV and 3.04 eV for pure ZnO and Co-doped ZnO with 5 at. %., indicating that the optical properties of the nanoparticles were affected by dopant concentration. PL and SEM/EDS characterization were used to determine the associated defects for each sample and the morphology and composition of the nanoparticles. PL results showed a strong blue emission at around 439 nm (2.83 eV), which is redshift with cobalt content (ΔE between 0.05 eV and 0.01 eV), attributed to the surface defects present in the doped samples. Conductivity analysis to temperature revealed a semiconductor behavior for all samples, and their respective activation energies determined. The results provide an easy method to obtain Co-doped ZnO nanoparticles with interesting properties for optoelectronics devices.

Experimental Investigations of the AC-Conductivity in NaTaO3 Ceramic Materials Doped with Cu and Al Metal Ions

Two ceramic samples of sodium tantalate (NaTaO3), doped with metal ions of copper (Cu; sample S1) or aluminum (Al; sample S2), were obtained by the sol-gel method. Complex impedance measurements in the frequency range (200 Hz–2 MHz) and at temperatures between 30 °C and 90 °C allowed identification of a transition temperature from semiconductor-type behavior to conductor-type behavior for each sample (52 °C for sample S1 and 54 °C for sample S2). In the temperature range with semiconductor behavior, the activation energy of each sample was determined. Based on the Mott’s variable-range hopping (VRH) model, the density of localized states at the Fermi level, N(EF), the hopping distance (R) and the hopping energy (W) were determined, for the first time, on NaTaO3 samples doped with Cu or Al metal ions. The increase in N(EF) of sample S2 compared to N(EF) of sample S1 was explained by the decrease in the hopping distance of charge carriers in sample S2 compared to that in sample S1. Additionally, using the correlated barrier hopping (CBH) model, the energy band gap (Wm) and the hopping (crossover) frequency (ωh) at various temperatures were determined. Knowledge of these electrical properties is very important for explaining the electrical conduction mechanisms in metal ion-doped compounds, with perovskite structure being of interest for the use of these materials in the conversion of thermoelectric energy, photocatalytic applications, electronics or other applications.

Exploring bismuth-substituted yttrium iron garnet: Insights into structural, optical, and dielectric characteristics

Magnetic garnets, a diverse group of magnetic insulating materials, have been the subject of extensive research for decades, owing to their versatility and potential for a wide range of applications. In this study, we synthesized Bismuth-Substituted Yttrium Iron Garnet (BiY2Fe5O12: BiYIG) using the solid-state reaction method to explore its structural, optical, and dielectric characteristics. X-ray diffraction analysis revealed the attainment of a pure cubic garnet phase in BiYIG, with a lattice parameter of 12.444 Å. Using UV–visible spectroscopy, we determined that the optical band gap of BiYIG is 2.2 eV, indicating n-type semiconductor behavior. We conducted a thorough investigation of the dielectric properties, examining capacitance, dielectric constant, dielectric loss, conductivity, impedance, and modulus, as functions of frequency and temperature. The impedance results revealed that the dielectric relaxation at room temperature was dominated by a Debye-type process, with a shift to a non-Debye-type process becoming apparent as temperature increased. Comprehensive analysis sheds light on the material's transport phenomena and optical attributes, offering insights into the potential of BiYIG for applications in magneto-dielectric and magneto-optical domains, given its high dielectric constant with low dielectric loss, and promising optical properties. These findings position BiYIG as a versatile material and underscore its suitability for advanced applications in future technological developments.

Doublet doped titanate ferroelectric system for capacitors and NTC thermistor applications

A simple negative temperature coefficient (NTC) thermistor Ba0.85Sr0.15Ti0.85Zr0.15O3 system is elaborated using a conventional solid-state reaction route. The structural analysis confirms that the elaborated pseudo-cubic system, which is indexed in the P4mm space group, exhibits one single phase. The dielectric properties and the electrical resistivity data are investigated over a large temperature range from 413 K to 673 K. In this temperature interval, the Steinhart–Hart equations are employed to confirm that Ba0.85Sr0.15Ti0.85Zr0.15O3 is a promising system for sensor application. Accordingly, the thermistor constant (β=10154 K), the sensitivity factor (-5.5 %/K≤α≤-2 %/K), the activation energy (Ea=0.875 eV), and the stability factor (SF=2.27) parameters are calculated to approve that Ba0.85Sr0.15Ti0.85Zr0.15O3 exhibits an NTC-thermistor behavior. The temperature dependence of the electrical resistivity confirms that Ba0.85Sr0.15Ti0.85Zr0.15O3 reveals a semiconductor behavior. The dielectric investigation shows that Ba0.85Sr0.15Ti0.85Zr0.15O3 exhibits a motivating dielectric properties (elevated dielectric constant value (105<ε’<106) and low dielectric losses (mostly < 0.007) with almost frequency independence between 20 Hz to 500 kHz). The colossal dielectric response of Ba0.85Sr0.15Ti0.85Zr0.15O3 is attributed to the internal barrier layer capacitor (IBLC) and the surface barrier layer capacitor (SBLC) effects. Such response suggests the suitability of Ba0.85Sr0.15Ti0.85Zr0.15O3 ceramic for high temperature capacitor applications.

Phase Transitions and Thermoelectric Properties of Charge-Compensated ZnxCu12-xSb4Se13.

In this study, we investigated the phase transitions and thermoelectric properties of charge-compensated hakite (ZnxCu12-xSb4Se13) as a function of Zn content. Based on X-ray diffraction and a differential scanning calorimetric phase analysis, secondary phases (permingeatite and bytizite) transformed into hakite depending on the Zn content, while Zn2Cu10Sb4Se13 existed solely as hakite. Nondegenerate semiconductor behavior was observed, exhibiting increasing electrical conductivity with a rising temperature. With an increase in Zn content, the presence of mixed phases of hakite and permingeatite led to enhanced electrical conductivity. However, Zn2Cu10Sb4Se13 with a single hakite phase exhibited the lowest electrical conductivity. The Seebeck coefficient exhibited positive values, indicating that even after charge compensation (electron supply) by Zn, p-type semiconductor characteristics were maintained. With the occurrence of an intrinsic transition within the measured temperature range, the Seebeck coefficient decreased as the temperature increased; at a certain temperature, Zn2Cu10Sb4Se13 exhibited the highest value. Thermal conductivity showed a low temperature dependence, obtaining low values below 0.65 Wm-1K-1. A power factor of 0.22 mWm-1K-2 and dimensionless figure of merit of 0.31 were achieved at 623 K for ZnCu11Sb4Se13.

Two novel stable phases of polonium oxides from first-principles evolutionary algorithm

Oxygen prominently displays a strong propensity to efficiently form stable molecules by establishing ionic/covalent bonds with a broad array of elements within the Mendeleev Table. That gives rise to a diverse spectrum of oxides that hold pivotal significance in contemporary optoelectronics, mineralogy, biological entities, and atmospheric constitution. We explore here the feasibility of polonium-oxygen compound formation, employing a first-principle evolutionary algorithm. The obtained structural predictions yield two distinct phases of PoO2, exhibiting respectively thermodynamic stability and metastability, specifically the cubic (Fm 3‾ m) and orthorhombic (Pmn21) crystal structures. Phonon calculations have unequivocally substantiated the dynamical stability inherent in these PoO2 structures. The Po–O system, characterized by its unusual physical-chemical attributes, presents noteworthy features in electronic behavior, bonding interactions, and dynamical properties. Both the Fm 3‾ m and the Pmn21 phases exhibit semiconductor behavior, each displaying a relatively substantial indirect bandgap of 2.11 eV and 2.50 eV, respectively, within the cubic and orthorhombic crystals. To unravel the bonding nature of PoO2, we employ a suite of analytical tools, including electronic density of states, Bader charge analysis, and electron localization function. These analyses collectively unveil a transfer of electrons from polonium to oxygen, thereby elucidating the coexistence of significant ionic and partial covalent Po–O bonds within the Po–O system.

Chirality-Induced Memristor of Chiral Nanostructured Half-Metallic Fe3O4 Films.

Spintronic memristors, which combine the nonvolatile characteristics of memristors with the scalability of a spin-transfer torque device, are expected to play a crucial role in advancing quantitative information processing. This field commonly relies on magnetic tunnel junctions, domain wall motion, and spin waves. Here, the discovery of chirality-induced memristor behavior in chiral nanostructured Fe3O4 films (CNFFs) is reported. These CNFFs are grown on fluorine tin oxide (FTO) substrates using enantiomeric glutamic acid (Glu) as symmetry-breaking agents and consist of arrays of oriented twisted nanofibers. At 100 K, the L-CNFF exhibits memristor behavior as a pinched hysteresis loop in the I-V curve, while the D-CNFF exhibits semiconductor behavior with constant electrical resistance. The intrinsic spin polarization of half-metallic Fe3O4 and the chirality-induced spin selectivity (CISS) are speculated to contribute to the memristor in one handedness of the chiral structure. These findings present a novel spinristor that combines the functions of a memristor and a spin-filter based on chiral structures, which may promote the development of spintronic devices.

Computational investigation of elastic properties of hypothetical Half-Heusler compounds XNbSn under hydrostatic pressures

We investigated the electronic, elastic, and magnetic properties of the hypothetical half- Heusler alloys with Niobium base atom, XNbSn with (X= Cr, Mn, Co, Fe, V) uses the full-potential (linearized) augmented plane-wave and local-orbitals [FP-(L)APW + lo] basis set in the WIEN2K ab-initio package based on density functional theory (DFT). We investigated the elastic constants, Shear modulus, young modulus, and bulk modulus of these alloys under different pressures (0, 20, 40, and 80 GPa). We predicted that CoNbSn behaves as a semiconductor with a direct energy gap of 0.99 eV, while the other half- Heusler alloys show a metallic behavior. CoNbSn keeps its semiconductor behavior under higher pressures up to 80 GPa. Both of VNbSn and CrNbSn have a high value of magnetic moments of 2.158 and 3.002 µB respectively. All XNbSn alloys are stable mechanically at different pressures according to the Born-Huang conditions. CoNbSn, FeNbSn, CrNbSn, and MnNbSn behave as a ductile material at ambient pressure.

Role of Bi/Te co-dopants on the thermoelectric properties of SnSe polycrystals: an experimental and theoretical investigation

A sustainable solution to the energy crisis may be found in thermoelectric materials and generators, capable of transforming thermal energy into electrical energy or vice versa. SnSe is one of the emerging thermoelectric materials with distinctive properties. The main advantages of this compound are earth-abundant, inexpensive, non-toxic and it is also known for its high thermoelectric performance. Here we prepared Bi/Te co-doped SnSe polycrystals; whereas, Bi and Te are added with different compositions such as (x = 0.0,0.02,0.04,0.06 and y = 0.03) in (Sn1-xBixSe1-YTeY) matrix by using the solid-state reaction method. XRD data confirms the samples belong to the orthorhombic crystal system with the Pnma space group. DFT calculations were used to see structural stability and electronic properties for pure and doped SnSe samples. Temperature-dependent semiconducting behavior of the samples has been demonstrated by electrical resistivity. The Seebeck coefficient, correlated with carrier concentration and mobility, validates the p-type behavior for the pristine samples and the n-type behavior for co-doped samples. The dominant behavior of phonon scattering has been demonstrated by thermal conductivity analysis. After co-doping there is decrement in total thermal conductivity was observed which 1.3 times lower than SnSe. A theoretical calculation was used to validate experimental results to estimate electrical properties, Seebeck coefficient, specific heat capacity, thermal conductivity, and power factor using Quantum espresso code with Boltzmann transport Equation. 4% Bi-doped sample displayed a significant increment in electrical conductivity and an enhanced Seebeck coefficient, which led to the power factor enhancement of approximately 2.0 times in contrast to the pristine sample and enhanced ZT of about 0.055 which is 3.43 times higher than the pristine SnSe.Graphical abstract

A comprehensive DFT analysis of the physical, optoelectronic and thermoelectric attributes of Ba2lnNbO6 double perovskites for eco-friendly technologies

Within the framework of density functional theory (DFT), as executed in WIEN2k as well as semi-classical Boltzmann transport theory, we reported structural, electronic, elastic, optical, thermoelectric, and thermodynamic properties of the double perovskite compound Ba2InNbO6. To employ the exchange–correlation potential, local density approximation (LDA), the generalized gradient approximation (GGA) with Perdew, Burke and Ernzerhof (PBE) and the modified Becke–Johnson (mBJ) potential is considered. The elastic constants are calculated to check the mechanical stability. The electronic calculations show semiconducting nature with a wide band-gap (3.63 eV) for Ba2InNbO6. The optical properties such as complex dielectric constant ε(ω), refractive index n(ω), reflectivity R(ω), absorption coefficient α(ω), optical conductivity σ(ω) and energy loss function L(ω) described with the incidence frequency. The absorption spectrum shows the behaviour of common semiconductors. The Seebeck coefficient (S) as well as electrical conductivity (σ/τ) also demonstrates the semiconducting nature of the studied compounds by holes having highest particles. The PF was 1.85 × 1012 W K−2 m−1 s−1 at 1200 K and thermodynamic studies, the heat capacity as well as Gruneisen parameter were guessed. Based on obtained results we can ensure that the double perovskite compound Ba2InNbO6 is well suitable for optical and thermoelectric applications.

Boosting photoelectron transfer by Fermi and doping levels regulation in carbon nitride towards efficient solar-driven hydrogen production

The exploration of efficient photosystems with fast carrier dynamics is an important pursuit for solar conversion into hydrogen energy, while tremendous challenges remain since the intrinsic relationship between the band structure and the charge transfer behavior in semiconductors is still elusive. Towards this, P doped graphitic carbon nitride (P-g-C3N4) is fabricated as a prototype photocatalyst with P existing in P − N = C state. Through tuning the content of P to modulate the electronic donor concentration, the Fermi level of g-C3N4 is unidirectionally regulated from below to above the doping level induced by P. And it is revealed that the relative position of Fermi level vs. doping level plays a crucial role in determining the charge migration dynamics, where only a doping state near the Fermi level can act as the most efficient electron trap to prolong carrier lifetime. Accordingly, the precisely tailored P-g-C3N4 achieves a superior apparent quantum efficiency (AQE) of 5.7 % at 420 nm in overall water splitting that is among the highest levels of current photosystems. Our findings offer an innovative strategy for band structure regulation toward efficient photocatalysis.

Synthesis of epitaxial LuN films

Epitaxy of rare-earth nitride films are crucial for studying their physical properties and offer significant potential for applications in spintronics and optoelectronics. However, synthesizing single-crystalline LuN presents significant challenges, leading to a limited understanding of its properties. In this study, we successfully achieved the epitaxial growth of (001)-oriented LuN films on YAlO3 (110) substrates by reactive magnetron sputtering epitaxy. Electrical transport measurement at low temperatures reveals that the LuN film exhibits semiconducting behavior between 300 K and 2 K, with an activation energy of approximately 0.01 eV. Notably, negative magnetoresistance was observed below 12 K, which can result from the defects and magnetic impurities in LuN films. Our results uncover the electronic and magnetic properties of epitaxial LuN films.

Tailoring the physical characteristics of ScTaPd2Sn2 and ScTaPt2Sn2 double half-Heusler compound for thermoelectric applications

Due to its potential uses in thermoelectrics, spintronics, and other sectors, double half-Heusler compounds have recently attracted much attention. This study presents the first-ever report on the structural, electronic, optical, elastic, and thermoelectric characteristics of the double half Heusler (DHH) compounds ScTaPd2Sn2 and ScTaPt2Sn2, employing density functional theory (DFT). Using the EV-GGA approximation, the estimated band structures exhibit a semiconductor behavior with an indirect bandgap of 0.549 eV and 0.851 eV, respectively. In addition, we examined optical characteristics. Our material structural stability and stiffness were confirmed using elastic characteristics. Boltzmann’s semiclassical theory attempts to explain a simulation concept in the BoltzTrap software. According to the thermoelectric investigation, these DHH are a p-type material, a candidate for thermoelectric application, specifically when doped.

Atomically substitution engineering of europium-based dichalcogenides for enhancing tailored properties and superior applications

Transition-metal chalcogenides can be used as photoconductors and in optoelectronic devices. Research on the electronic properties of KBaSbSe3 has established that the parental compound possesses an indirect band gap of 2.0 eV. By europium doping, the material’s band structure experienced a transformation, resulting in a direct semiconducting behavior. This change was observed in spin-up and spin-down polarizations, with a bandgap of 1.5 eV. An analysis of the electron charge density (ECD) contour of the (101) crystallographic plane has been conducted to examine the bonding characteristics. Based on the reflectivity spectra, it is evident that both compounds exhibit a significant level of reflectivity, making them potentially suitable for shielding against visible and UV radiation. The calculations of birefringence demonstrate the ability to achieve phase matching for both observed compounds. Calculations were performed using Boltzmann transport theory to determine the Seebeck coefficient, Hall coefficient, electrical and thermal conductivities, and figure of merit. The compound KBaSbSe3 exhibits N-type at low temperatures and P-type due to a change in the Seebeck coefficient. Both compounds have excellent optical and thermal responses, making them promising materials for optoelectronic and thermoelectric devices.

Mullite-type Bi2Mn4O10 thin films prepared by a PVA-assisted sol–gel method

Mullite-type Bi2Mn4O10 is an attractive material for several potential applications, such as energy conversion and storage, data storage, batteries and photoelectrochemical devices. Bi2Mn4O10 thin films were prepared by sol–gel from a simple and highly stable precursor solution, based on the corresponding metal nitrate salts, acetic acid and polyvinyl alcohol. The films were deposited by dip-coating onto FTO substrates and dried at 350 °C; the dipping-drying cycle was repeated six times and the films were finally sintered at 600 °C. The films were characterized using GIXRD, revealing an excellent match with the ICDD database and previous studies. The UV–Vis measurements showed a direct band gap of 1.78 eV for the films. Raman spectroscopy permitted the identification of the Ag, B1g and B2g vibrational modes. The electrical properties via Hall effect measurements showed that the Bi2Mn4O10 thin films exhibit an n-type semiconductor behavior. Finally, the FESEM micrographs and AFM images revealed homogeneous, nanostructured thin films. In summary, through this comprehensive characterization, it was observed that high quality, nanocrystalline semiconductor thin films of Bi2Mn4O10 can be produced using this simple sol–gel method.

Effect of cobalt doping on the structural, magnetic, optical, and electronic properties of LiFeCr4O8

Cobalt doping's influence on the structural, magnetic, and electronic properties of the double spinel LiFeCr4O8 was systematically investigated. Rietveld refinement revealed a consistent increase in lattice parameter a and unit cell volume with cobalt incorporation. Magnetic susceptibility measurements indicated three distinct transitions: an increase in the ferrimagnetic transition temperature (TN), a decrease in the magnetostructural transition temperature (TMS), and an increase in the spin gap transition by cobalt doping. Through diffuse reflectance spectroscopy the direct optical band gap (Eog) was obtained with values of 1.169 eV, 1.303 eV, 1.396 eV, and 1.230 eV for x = 0.0, 0.1, 0.2, and 0.5, respectively. The observed increase in Eog with cobalt doping suggests a widening of the band gap, which could be beneficial for optoelectronic applications. By means of X-ray photoelectron spectroscopy (XPS) the core levels of Li 1s, Co 3p, Fe 3p, Cr 3p, Fe 2p, Cr 2p, and O 1s were identified. XPS valence band (VB) analysis revealed a decreasing intensity at binding energy BE = 0 eV with respect to x = 0.0. Density functional theory calculations with Hubbard U correction (DFT + U) confirmed a ferrimagnetic semiconductor behavior with a direct electronic band gap (Eeg) of 1.085 eV.

Vacancy-and doping-mediated electronic and magnetic properties of PtSSe monolayer towards optoelectronic and spintronic applications.

Developing new multifunctional two-dimensional (2D) materials with two or more functions has been one of the main tasks of materials scientists. In this work, defect engineering is explored to functionalize PtSSe monolayer with feature-rich electronic and magnetic properties. Pristine monolayer is a non-magnetic semiconductor 2D material with a band gap of 1.52(2.31) eV obtained from PBE(HSE06)-based calculations. Upon creating single Pt vacancy, the half-metallic property is induced in PtSSe monolayer with a total magnetic moment of 4.00 μ B. Herein, magnetism is originated mainly from S and Se atoms around the defect site. In contrast, single S and Se vacancies preserve the non-magnetic nature. However, the band gap suffers of considerable reduction of the order of 67.11% and 48.68%, respectively. The half-metallicity emerges also upon doping with alkali metals (Li and Na) with total magnetic moment of 1.00 μ B, while alkaline earth impurities (Be and Mg) make new diluted magnetic semiconductor materials from PtSSe monolayer with total magnetic moment of 2.00 μ B. In these cases, magnetic properties are produced mainly by Se atoms closest to the doping site. In addition, doping with P and As atoms at chalcogen sites is also investigated. Except for the half-metallic AsSe system (As doping at Se site), the diluted magnetic semiconductor behavior is obtained in the remaining cases. Spin density results indicate key role of the VA-group impurities in magnetizing PtSSe monolayer. In these cases, total magnetic moments between 0.99 and 1.00 μ B are obtained. Further Bader charge analysis implies the charge loser role of all impurities that transfer charge to the host monolayer. Results presented in this work may suggest promises of the defected and doped Janus PtSSe structures for optoelectronic and spintronic applications.

Pressure effect on the structural, electronic, elastic, thermodynamic and optical properties of LiZnZ (Z = N, P, and As) Li-based half-Heusler

ABSTRACT Using first-principle calculations based on the density functional theory, we investigated the pressure effect on the structural, electrical, elastic, thermodynamic,electronic and optical properties of Li-based half-Heusler compounds LiZnZ (Z = N, P, and As). We found that the most stable structural phase is the α-phase at 0 GPa for all studied compounds. The obtained lattice parameters at 0 GPa align with existing experimental and theoretical findings for all compounds. The negative values of cohesive and formation energies of LiZnZ indicate that the studied compounds are chemically stable. Band structure calculations confirm the semiconductor behavior of all studied compounds. The calculated elastic and thermodynamic properties show that these compounds are mechanically and thermodynamically stable. The reflectivity values, which are approximately 39%, 54%, and 57% for LiZnN, LiZnP, and LiZnAs, respectively, suggest that the semiconductors LiZnZ are well-suited for optoelectronic applications.

Computational investigation of pure antimonene and antimonene/bismuthene heterostructure for detecting thermal runaway gases

The widespread use of lithium-ion batteries in everyday life has emphasized the critical need for safety precautions, particularly in monitoring the release of thermal runaway gases to ensure human well-being. This study employs density functional theory (DFT) to construct adsorption models of pure antimonene, bismuthene, below and above of the heterostructure of Sb/Bi. Pure Sb and Bi exhibited semiconducting behavior, whereas the heterostructure of antimonene with bismuthene transformed the semiconducting behavior to metallic. Target gases, including C2H4, CH4, H2, CO, and CO2, were adsorbed onto these models. All gases displayed physiosorption with the studied materials. By analyzing adsorption energy, charge transfer, energy band structure, density of states, work function, sensing response, electron localization function (ELF), and recovery time, the research reveals that the heterostructure displays strong adsorption properties, a robust sensing response, and quicker desorption times, suggesting its potential as a resistive gas sensor. This theoretical exploration offers valuable insights for experimentalists aiming to design and synthesize novel, sensitive materials for detecting thermal runaway gases.

Charge carrier motion and Mn-spin coupling defining the transport behaviors and the magnetic order at DySrCaMnO3 polycrystalline ceramic

The Ca-doped Dy0.5Sr0.5MnO3 manganite was synthesized using the Sol-Gel technique. The material demonstrates semiconducting behavior across a wide range of temperatures. This behavior could be attributed to the involvement of small polaron hopping, Shklovskii-Efros variable range hopping, and Mott-variable range hopping mechanisms. The Shimakawa Model is used in the intermediate temperature range to verify the existence of multiphonons in the compound. The conductance spectra adhere to the Jonscher power law and can be elucidated by the utilization of the Jump relaxation model. The manganite structure deviated from Summerfield scaling, indicating that numerous crystalline-ordered materials possess unexplored conduction and relaxation mechanisms, unlike amorphous systems. Magnetic anomalies at around 6K were observed, indicating antiferromagnetic (AFM) interactions between Dy–Dy pairs. Another anomaly occurs at approximately 40K, indicating AFM coupling between Mn-spins.