Semiconductor Layers Research Articles

Device simulation study of multilayer MoS2 Schottky barrier field-effect transistors

Molybdenum disulfide (MoS2) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS2field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturallyn-doped MoS2is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS2Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find thatp-type MoS2SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2device. Introducing a dual-split gate geometry, the MoS2SBFETs can further operate in four distinct configurations:p - p,n - n,p - n, andn - p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

Monte Carlo Simulation of Electron Beam Induced Current in Au/Si Schottky Diodes: effects of metal layer thickness and minority carrier diffusion length

The Electron Beam Induced Current (EBIC) technique, when combined with scanning electron microscopy (SEM), offers valuable insights into the electronic properties of semiconductor materials at the nanoscale. This study leverages EBIC and Monte Carlo simulations to investigate the behavior of Schottky diodes, particularly focusing on the influence of gold layer thickness on current gain and backscatter electron (BSE) yield. The simulation results reveal the significant effects of depletion depth and minority carrier diffusion length on the diode’s performance. A key finding is that the EBIC current decreases with increased gold layer thickness, due to a higher BSE fraction. Additionally, at low beam energies, the current is negligible when the interaction volume is confined within the metal layer, while at higher energies, some penetration into the semiconductor occurs, generating a measurable EBIC current. These findings provide a better understanding of the interplay between metal layer thickness and semiconductor performance, which is crucial for optimizing semiconductor devices.

Determining Bandgaps in the Layered Group‐10 2D Transition Metal Dichalcogenide PtSe2

AbstractUnlike traditional group‐6 transition metal dichalcogenides (TMDs), group‐10 TMDs such as PtSe2 and PdTe2 possess highly tuneable indirect bandgaps, transitioning from semiconducting in the near‐infrared to semimetal behavior with a number of monolayers (MLs). This opens up the possibility of TMD‐based mid‐infrared and terahertz optoelectronics. Despite this large potential, the optical properties of such materials have shown an extremely large disparity between that predicted and measured. For example, simulations show that a few MLs is required for the semiconductor–semimetal transition, whilst tens of MLs is found experimentally. This is a result of widely used optical extrapolation methods to determine bandgaps, such as the Tauc plot approach, that are not adapted here owing to i) nearby direct transitions, ii) the material dimensionality and iii) large changes in the non‐parabolic bandstructure with MLs. Here, uniquely combining optical ellipsometry to determine the complex permittivity, terahertz time resolved spectroscopy for the complex conductivity and in‐depth density functional theory (DFT) simulations, it is shown that the optical properties and bandstructure can be determined reliably and demonstrate clearly that the semiconductor‐semimetal transition occurs for PtSe2 layers ≈5 MLs. The microscopic origins of the observed transitions and the crucial role of the Coulomb interaction for thin semiconducting layers, and that of interlayer van der Waals forces for multilayer semimetallic samples are also demonstrated. This work of combining complimentary experimental techniques and extensive simulations avoids the application of constrained extrapolation methods to determine the optical properties of group‐10 TMDs, and will be of importance for future mid‐infrared and terahertz applications.

Heart Engineering of Photovoltaic Devices: Preparation of New Ru Dyes Using Thioindigo and Phenothiazine

ABSTRACTPhenothiazine and thioindigo were used as substitutes to make new Ru dyes for DSSCs. The thioindigo unit is a notable molecule with strong technical qualities in these photosensitizers. As a result, research was done on the cyano substituent as an electron‐donating group. Both theoretical and experimental methods were used to assess the complexes' optical response. A better photovoltaic response is achieved by the cyano groups' efficient bonding with the semiconductor layer. Additionally, the complexes that were formed contain two different kinds of electron accepter substituents: cyanoacrylic acid and carboxylic acid, with efficiencies of 7.42% and 4.17%, respectively. Additionally, cosensitization was investigated and analyzed utilizing N719 and two generated complexes. DSSCs made with Complex 1 and 2 and N719 have corresponding efficiency percentages of 8.86% and 9.74%.

Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors.

Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field-driven insulator-to-metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near-zero spin-orbit coupling of Gd3+-based half-filling f-electron system and the strong on-site f-d exchange coupling in Gd atoms. These results not only providea novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet-based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities.

Design and analysis of central gate organic thin film transistor

Abstract This paper presents a novel central gate organic thin-film transistor (OTFT) with electrodes in top-bottom configuration and its comparative performance analysis with conventional single and dual gate OTFTs. The central gate OTFT is comprised of a single gate electrode configured to be the center thin film. A pair of identical dielectric layers viz. top dielectric layer and a bottom dielectric layer on both sides of gate electrode to facilitate the further deposition top and bottom organic semiconductor layer over them respectively. The organic semiconductor layers (OSC) are configured as top OSC layer and a bottom OSC to accommodate two independent conduction channels. The source and drain electrodes are also deposited in pairs in top and bottom configurations. Due to the subtle modifications in the architecture the resultant output drain current of the central gate (CG) OTFT has increased manifold. It has been found in the study that the CG OTFT produces 94%, 76.36%, 80.58% higher drain current than bottom gate bottom contact (BGBC), top gate bottom contact (TGBC) and bottom gate top contact (BGTC) OTFT respectively of similar size, operating under identical voltage regime. Similarly in the case of dual gate (DG) OTFT an improvement of 5.10% has been recorded without any additional gate electrode at the same operating voltages.

Broadband self-powered MoS2/PdSe2/WSe2 PSN heterojunction photodetector for high-performance optical imaging and communication

Two-dimensional (2D) semi-metal transition metal dichalcogenides (TMDs) have drawn significant attention for their distinctive physical properties. However, the inherent high dark current of these materials and the single structure of detectors hinder the further development of photodetectors with high performance. Here, we construct a PSN (p-type semiconductor/semi-metal/n-type semiconductor) architecture by sandwiching 2D semi-metal between two semiconductor layers. In this architecture, the top and bottom layers generate an internal built-in electric field, while the middle layer serves as an absorption layer for low-energy photons and facilitates the dissociation of photo-generated carriers. As a result, the heterojunction device demonstrates a wide spectrum optical response from visible to infrared light (405 nm to 1550 nm) without requiring an external voltage. Working in self-powered mode at room temperature, the device achieves a responsivity of 0.56 A/W, a detectivity of 5.63 × 1011 Jones, and a rapid response speed of 190/74 µs. Additionally, the device shows potential for applications in fast optical communication and multi-wavelength optical imaging. This work presents a novel approach for developing a new type of broadband, self-powered, high-performance miniaturized semi-metal-based photodetector.

Semiconductor Nanoporous Anodic Alumina Photonic Crystals as a Model Photoelectrocatalytic Platform for Solar Light‐Driven Reactions

In this study, nanoporous anodic alumina distributed‐Bragg reflectors (NAA–DBRs) functionalized with tungsten trioxide (WO3) are used as prototype photoelectrocatalysts (PEC) for harnessing the slow photon effect to maximize photon‐to‐electron conversion efficiency under UV–visible–NIR illumination. NAA–DBR structures are structurally engineered by anodization, where their characteristic photonic stopband is precisely tuned along specific positions of the UV–visible spectrum. Subsequent atomic layer deposition is employed to coat the inner surface of these porous structures with WO3 semiconductor layers. Upon the application of overpotential bias, these platforms reveal excellent electron–hole pair separation to boost photoelectrocatalytic reactions. Photoelectrochemical degradation of methylene blue is used as a model reaction to elucidate enhancements associated with structural and optoelectronic arrangements. Notably, precise spectral alignment between the photonic stopband's red edge and the absorbance band of methylene blue enhances the degradation performance through the slow photon effect. Applying an overpotential bias further improves the photodegradation performance through efficient charge separation. These systems outperform comparable structures in this model reaction, achieving a maximum kinetic rate of 13.7 ± 2.0 h−1. The findings create new opportunities to develop high‐performing PEC technologies harnessing light–matter interactions.

Differential Hall Effect Metrology for Electrical Characterization of Advanced Semiconductor Layers

Semiconductor layers employed in fabricating advanced node devices are becoming thinner and their electrical properties are diverging from those established for highly crystalline standards. Since these properties also change as a function of depth within the film, accurate carrier profiling solutions are required. The Differential Hall Effect (DHE) technique has the unique capability of measuring mobility and carrier concentration (active carriers) through the depth of a semiconductor film. It comprises making successive sheet resistance and sheet Hall coefficient measurements as the thickness of the electrically active layer at a test region is reduced through successive material removal steps. Difference equations are then used to process the data and plot the desired depth profiles. The fundamentals of DHE were established in 1960s. Recently, the adaption of electrochemical processing for the material removal steps, and the integration of all other functionalities in a Differential Hall Effect Metrology (DHEM) tool, has made this technique more practical and accurate and improved its depth resolution to a sub-nm range. In this contribution, we review the development history of this important technique and present data from recent characterization work carried out on Si, Ge and SiGe layers.

Semiconductive Buffer Layer for the Conductor– Insulator Interface of HVDC GIS/GIL

Semiconductive Buffer Layer for the Conductor– Insulator Interface of HVDC GIS/GIL

Synthesis and Performance of Bithiophene Isoindigo Organic Semiconductors with Side‐Chain Functionality in Transistors

AbstractThe isoindigo and its derivatives have rapidly garnered attention as widely employed electron‐deficient moieties, finding extensive applications in organic field‐effect transistors. In this study, four different isoindigo‐based organic semiconductor polymers were synthesized via a Stille coupling reaction of four isoindigo molecules with varying side chains serving as acceptors and bithiophene as donors. Furthermore, their optical, electrochemical, thermal stability, and other relevant properties were comprehensively evaluated. These polymers exhibited remarkable electrochemical and thermal stability attributed to their low LUMO energy level, which facilitates effective electrical contact between the semiconductor layer and the source/drain while ensuring excellent air stability for the semiconductor polymers. Additionally, solution‐gate field‐effect transistors prepared using these polymers achieved hole mobilities of 10−2 cm2 V−1 S−1 along with an Ion/Ioff ratio of 8.39×103, demonstrating exceptional field‐effect performance.

Improving the Optical and Electrical Characteristics of Layered Semiconductors Doped with Transition Metals

Improving the Optical and Electrical Characteristics of Layered Semiconductors Doped with Transition Metals

Revealing two-dimensional electric field crowding effect in breakdown performance of DPPT-TT polymer-based OFETs

The diketopyrrolopyrrole-based polymer (DPPT-TT) has been employed in organic power field effect transistors due to its exceptional off-state breakdown performance. The impact of organic semiconductor layer thickness on the breakdown performance has not been explored. In this study, we investigate the impact of DPPT-TT layer thickness on the breakdown voltage (BV) by fabricating organic field effect transistors (OFETs) with various DPPT-TT layer thicknesses. Our findings reveal that the devices' BV is a strong function of DPPT-TT layer thickness, and reducing the DPPT-TT layer thickness from 68 to 15 nm results in a decrease in BV from 291 to 86 V, attributed to the two-dimensional (2D) electric field crowding effect. An analytical model utilizing the 2D Poisson equation reveals an electric field at the DPPT-TT layer's surface. Thinner DPPT-TT layer exhibits larger electric field peak, leading to premature breakdown near the drain electrode. The relationship between breakdown electric field and DPPT-TT layer thickness was established by fitting the experimental data to the model, revealing an average BV error of only 8.8%. This phenomenon is validated to be ubiquitous in polymer based OFETs via DPPT-TT-based and P3HT-based devices. According to the proposed model, this 2D electric field crowding effect can be mitigated by adjusting the dielectric layer thickness (tD) and/or the dielectric material.

Fine-tuning Cesium lead chloride perovskite field-effect transistors for sensing applications: Bridging numerical modeling and experimental validation

This study presents a comprehensive approach to fine-tuning Cesium Lead Chloride Perovskite Field-Effect Transistors (CsPbCl3-FETs) for sensing applications by bridging numerical modeling with experimental validation. By combining finite element methods in COMSOL Multiphysics for optimization, we tailored FET parameters such as oxide and perovskite thin film thickness. The fabricated FET, with a 200 nm semiconductor layer and 30 nm oxide thickness, was strategically chosen to operate in a non-depletion mode, maximizing mobility while minimizing power consumption. Experimental results closely aligned with numerical simulations, showcasing a threshold voltage of 0.50 V±0.07 V and an impressive on/off current ratio of 1.50 x 104 ± 0.3 x 104. Notably, the perovskite FET exhibited remarkable carrier mobility in saturation mode, reaching 5.40 cm2/V-s ± 0.8 cm2/V-s, outperforming other attempts in the literature. This work underscores the potential of CsPbCl3 FETs for high-performance sensing applications, offering insights into optimizing device parameters for enhanced functionality and efficiency.

Field strength prediction of 220 kV cable oil terminal defects based on multivariate nonlinear regression model

During the installation of a cable oil terminal, it is easy to leave scratches on the main insulation owing to uneven forces when removing the semi-conductive layer. Scratch defects cause field intensity distortion, which leads to partial discharge and insulation failure. This study attempts to establish a simulation model of a 220 kV cable terminal to determine the effect of the length, depth, and position of the scratch on the maximum field strength at the defect. The simulation and experiment demonstrate that the maximum field strength at the defect increases with greater length and decreases as the depth increases. Therefore, a prediction method for the terminal defect field strength based on a multivariate nonlinear regression model was proposed in this study. When the defect is located at 20 mm from the root of the stress cone, the maximum field strength is 14.5 MV/m when the length and depth are 2 mm and 1 mm, respectively. The maximum field strength at the defect was predicted based on the length, depth, and position of the scratch defect to evaluate the severity of the defect.

Comprehensive analysis of the performance of a microfluidic photoelectrochemical solar cell with heat exchanger

A dye-sensitized solar cell (DSSC) is a type of photoelectrochemical cell that converts sunlight directly into electricity using a photoanode with a dye-sensitized, nonporous semiconductor layer. This study investigates the impact of integrating microfluidic capabilities into DSSCs, resulting in a flow-cell configuration that introduces new electrical characteristics without compromising its performance. The primary goal of the work was to define and determine the values of heat, mass, and charge transport resistances, and to explore their relationships with the cell’s current–voltage characteristics, temperature, light intensity, and spectra. We employed both experimental methods and computational fluid dynamics using the Lattice-Boltzmann solver to analyze the cell’s dynamics. A novel multilayered microfluidic DSSC (µDSSC) was designed, featuring an innovative “gapless” configuration with a photoactive surface area exceeding 7 cm2, integrated directly with a microfluidic heat exchanger. This configuration allowed the µDSSC to achieve a power conversion efficiency (PCE) of at least 6 % under standard test conditions, with a fill factor reaching up to 68 %. By gradually covering the cell surface, the impact of series resistance (Rs) on PCE was minimized, enabling a maximum PCE of 19–22 %. A new integral definition of the fill factor (IFF) was proposed, which accurately describes the performance of cells constrained by ion mass transport resistance. For the gapless µDSSC, the IFF ranged from 58 % to 88 %. Additionally, we introduced a maximum cell efficiency (MCE) parameter to represent the cell’s efficiency at the theoretical limit of Rs = 0, determined to be 20.7 % for the gapless µDSSC. This MCE value is specific to the cell and is independent of the illuminated surface area and incident light intensity. The thermal efficiency of µDSSC cells is generally limited by heat conduction through the multilayer structure, but at practical cell surface temperatures of 50–80 °C, this limitation is 3 to 6 times less significant than the limitation imposed by the maximum solar energy flux reaching the cell surface. The integration of microchannels into the cell led to a 58 % reduction in hydraulic resistance along the main flow direction. While electrolyte flow typically reduces efficiency in wide-gap DSSCs, the gapless configuration minimizes mass transport resistance, ensuring that fluid flow does not adversely affect the performance of gapless µDSSCs.

Electro-Optically Configurable Synaptic Transistors With Cluster-Induced Photoactive Dielectric Layer for Visual Simulation and Biomotor Stimuli.

The integration of visual simulation and biorehabilitation devices promises great applications for sustainable electronics, on-demand integration and neuroscience. However, achieving a multifunctional synergistic biomimetic system with tunable optoelectronic properties at the individual device level remains a challenge. Here, an electro-optically configurable transistor employing conjugated-polymer as semiconductor layer and an insulating polymer (poly(1,8-octanediol-co-citrate) (POC)) with clusterization-triggered photoactive properties as dielectric layer is shown. These devices realize adeptly transition from electrical to optical synapses, featuring multiwavelength and multilevel optical synaptic memory properties exceeding 3 bits. Utilizing enhanced optical memory, the images learning and memory function for visual simulation are achieved. Benefiting from rapid electrical response akin to biological muscle activation, increased actuation occurs under increased stimulus frequency of gate voltage. Additionally, the transistor on POC substrate can be effectively degraded in NaOH solution due to degradation of POC. Pioneeringly, the electro-optically configurability stems from light absorption and photoluminescence of the aggregation cluster in POC layer after 200°C annealing. The enhancement of optical synaptic plasticity and integration of motion-activation functions within a single device opens new avenues at the intersection of optoelectronics, synaptic computing, and bioengineering.

Facile formation of van der Waals metal contact with III-nitride semiconductors

Metal–semiconductor contacts play a pivotal role in controlling carrier transport in the fabrication of modern electronic devices. The exploration of van der Waals (vdW) metal contacts in semiconductor devices can potentially mitigate Fermi-level pinning at the metal–semiconductor interface, with particular success in two-dimensional layered semiconductors, triggering unprecedented electrical and optical characteristics. In this work, for the first time, we report the direct integration of vdW metal contacts with bulk wide bandgap gallium nitride (GaN) by employing a dry transfer technique. High-angle annular dark-field scanning transmission electron microscopy explicitly illustrates the existence of a vdW gap between the metal electrode and GaN. Strikingly, compared with devices fabricated with electron beam-evaporated metal contacts, the vdW contact device exhibits a responsivity two orders of magnitude higher with a significantly suppressed dark current in the nanoampere range. Furthermore, by leveraging the high responsivity and persistent photoconductivity obtained from vdW contact devices, we demonstrate imaging, wireless optical communication, and neuromorphic computing functionality. The integration of vdW contacts with bulk semiconductors offers a promising architecture to overcome device fabrication challenges, forming nearly ideal metal–semiconductor contacts for future integrated electronics and optoelectronics.

Investigation on room-temperature persistent photoconductivity in γ-InSe layered semiconductor

We have presented the room-temperature persistent photoconductivity (PPC) effect in γ-InSe layered semiconductors. The PPC effect can be observed in the temperature range from room temperature down to 200 K, and the PPC decay is well described by a stretch-exponential function. The temperature-dependent PPC and performance of PPC decay indicate that the random local-potential fluctuations (RLPF) mechanism is responsible for PPC effect inγ-InSe. In addition, the PPC behavior at different temperature regions can be well explained by the percolation model associated with the RLPF mechanism.

Electrical and thermal transport properties of Cr2Se3-Cr2Te3 solid-solution alloy system and estimation of optimal thermoelectric properties

Cr2Se3 is a layered narrow-bandgap semiconductor with a low lattice thermal conductivity of ∼1 W/mK, which can be considered as a potential thermoelectric material. A solid-solution alloy system with Cr2Te3 can be designed to manipulate the electrical and thermal transport properties. In this study, a series of Cr2Se3-Cr2Te3 solid-solution alloys (Cr2(Se1-xTex)3, x = 0, 0.33, 0.5, 0.67, 0.83, and 1) were synthesized, and their electrical and thermal transport properties were investigated. Regarding the electrical transport properties, the power factor (∼0.35 mW/mK2) of Cr2Se3 gradually and significantly decreased as the Te content (x) increased owing to the significant decrease in the Seebeck coefficient that resulted from the large increase in the carrier concentration. Regarding the thermal transport properties, the total thermal conductivity increased with x as a result of the large increase in the electrical conductivity, despite the continuous decrease in the lattice thermal conductivity. Consequently, the thermoelectric figure of merit (zT ∼ 0.20) of Cr2Se3 gradually and significantly decreased to 0.009 for Cr2Te3 at 700 K; thus, no enhancement of zT was observed from the experimental results of simple solid-solution alloying. On the other hand, the thermoelectric quality factors of the solid-solution compositions for x = 0.33–0.83 were found to be enhanced compared to that of the Cr2Se3 sample, implying that zT could be further enhanced by optimizing the carrier concentration. Indeed, enhanced zT values were estimated based on a single parabolic band model for the solid-solution compositions with x = 0.33–0.83 if the carrier concentration was optimized to ∼1019 cm−3, which was found to be owing to the increased nondegenerate and weighted mobility (inferring weaker carrier–phonon interaction). Therefore, it is suggested that the solid-solution alloying approach could provide a feasible strategy to enhance the thermoelectric performance by reducing carrier-phonon interaction when further combined with carrier concentration optimization.