Self-powered Perovskite Photodetectors Research Articles

Lead-free Cs3Bi2I9 perovskite hexagonal microplates: A promising material solution-processed for ultraviolet self-powered photodetectors

In recent times, hybrid organic-inorganic lead halide perovskites have garnered significant attention in the realm of optoelectronic devices. Metal halide perovskites are extensively researched for photodetection due to their exceptional optical and electrical properties. However, the toxicity of lead and the unstable nature of organic components are limiting its potential. Lead-free perovskites, on the other hand, have low toxicity and are being explored as a promising material for photodetector applications. However, achieving self-powered perovskite photodetectors with high photoresponse, broad spectral sensitivity, and long-term stability remains challenging Among them, Cs3Bi2I9 perovskites have emerged as standout, garnering attention for their environmentally friendly nature, impressive stability, and heightened photosensitivity. Herein, FTO/ Al-doped ZnO (AZO)/Cs3Bi2I9/P3HT/C self-powered ultra-violet (UV) photodetector. This device demonstrated outstanding self-powered photodetection capabilities with a photoresponsivity of 29 mA/W, a specific detectivity of 1.05×1011 Jones, and an impressive response rise and decay time of 90 ms /140 ms. Furthermore, the PDs device can function as a bias-based UV photodetector.

A Photolithography-Free Fabrication Strategy for Perovskite Photodetector Array with High-Security Imaging Application.

Metal halide perovskites have attracted significant attention for high-performance and cost-effective photodetector (PD) arrays in recent years. Traditional perovskite photodetector arrays typically rely on planar structure and photolithography, which limit resolution and involve complex, costly processes. To address these challenges, an innovative, lithography-free fabrication strategy is proposed utilizing direct laser writing ablation and a surface energy-assisted selective growth process. A 10×10 self-powered perovskite photodetector array is demonstrated with a vertical cross-bar structure fabricated on a laser-ablated textured Indium-Tin Oxide (ITO) substrate which improves the device performance. The device exhibits a fast photoresponse and effective imaging capability. Moreover, the intrinsic physical disorder and randomness of perovskite provide highly secure entropy sources, making the photodetector array suitable for physical unclonable function (PUF) devices. This method offers a promising opportunity for simplifying the fabrication process, enhancing manufacturability, and advancing the application of perovskite PD arrays in secure imaging systems.

Investigation of CsSn0.2Pb0.8I3 QDs applied to carbon-based self-powered perovskite photodetectors

Investigation of CsSn0.2Pb0.8I3 QDs applied to carbon-based self-powered perovskite photodetectors

Highly efficient self-powered CH3NH3Pbl3 perovskite photodiode with double-sided poly(methyl methacrylate) passivation layers

Hybrid organohalide perovskites have recently attracted significant attention due to their outstanding photovoltaic (PV) conversion capabilities in optoelectronic devices. Herein, to develop a highly sensitive and self-powered perovskite-based PV photodiode (PVPD), we implement the selective use of poly(methyl methacrylate) (PMMA) as noise-current-reducing passivation layers on both the front and rear sides of a CH3NH3PbI3 (MAPbI3) perovskite light-absorbing layer. It is found that the PMMA layers effectively suppress carrier recombinations at the interfaces, resulting in fairly high power conversion efficiency of 17.6%. Additionally, the double-sided PMMA-passivated MAPbI3 PVPD shows exceptional specific detectivity values (1.0 × 1014 Jones from the dark current and 1.3 × 1012 Jones from the noise current), significantly outperforming conventional MAPbI3 PVPDs without passivation layers. The device also exhibits a very wide linear dynamic response range of ∼139 dB, with rapid rise and decay response times of 57 and 18 μs, respectively. The double-sided PMMA-passivated MAPbI3 PVPD also is shown to be highly durable in terms of its dynamic responses even after a prolonged storage period of 1500 h. These results suggest that advanced interface engineering using double PMMA passivation layers holds great potential for developing high-performance self-powered perovskite photodetectors for a range of optoelectronic applications.

A sensitive self-powered perovskite photodetector via noise suppression with poly(vinylidene fluoride–trifluoroethylene) doping for defect passivation

The rapid advancement of self-powered perovskite photodetectors (PDs) in recent years has been hindered by numerous defects present in solution-processed perovskite polycrystalline films, significantly impacting device performance.

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector.

In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.

Surface passivation of CsPbBr3 films by interface engineering in efficient and stable self-powered perovskite photodetector

All-inorganic metal halide perovskite is considered as one of the most promising perovskite materials for photodetectors, because of its remarkable optoelectronic characteristics and stability. Whereas, it remains challenge to achieve both excellent photodetection performance and stability due to the multitudes of defects in perovskite films. Herein, an interface engineering based on surface passivation strategy to achieve high-quality CsPbBr3 perovskite films by introducing thioacetamide (C2H5NS, abbreviated as TAA) as interface materials is reported. The interaction between TAA and perovskite passivates the uncoordinated Pb2+ on the surface of CsPbBr3 film, suppress carrier non-recombination and accelerates carriers transfer. The self-powered photodetector based on the passivated CsPbBr3 film prefers the maximum responsivity of 0.26 A W−1 and detectivity of 8.39 × 1012 Jones under 520 nm irradiation. In addition, the optimized photodetector exhibits excellent stability and maintains more than 98% of its initial photocurrent when operating over 8 h. This work demonstrates an alternative approach for the preparation of improved performance in CsPbBr3 perovskite photodetectors and associated photoelectric devices.

Self-powered CH3NH3PbI3 perovskite photodiode with a noise-suppressible passivation layer of poly(methyl methacrylate).

Organohalide perovskite materials and related optoelectronic applications have drawn significant attention due to their promising high-performance photon-to-electricity conversion efficiencies. Herein, we demonstrate a highly sensitive self-powered perovskite-based photodetector created with a noise-current-suppressible passivation layer of poly(methyl methacrylate) (PMMA) at the interface between a CH3NH3PbI3 light-absorbing layer and a NiOx hole-transporting layer. Along with the defect passivation effect, the PMMA layer effectively diminishes unwanted carrier recombination losses at the interface, resulting in a significant reduction of the leakage/noise current. Consequently, without external bias, a remarkably high level of specific detectivity (∼4.5 × 1013 Jones from the dark current and ∼0.81 × 1012 Jones from the noise current) can be achieved due to the use of the PMMA passivation layer, greatly exceeding those of conventional unpassivated perovskite devices. Moreover, we observed a very wide linear dynamic response range of ∼129 dB together with rapid rise and decay response times of ∼52 and ∼18 µs, respectively. Overall, these results provide a solid foundation for advanced interface-engineering to realize high-performance self-powered perovskite photodetectors for various optoelectronic applications.

High-performance flexible and self-powered perovskite photodetector enabled by interfacial strain engineering

The spin–orbit coupling (SOC) strength in a perovskite film is enhanced by regulating the lattice strain with PDCBT layer, resulting in a high-performance flexible and self-powered perovskite photodetector.

Graded multilayer triple cation perovskites for high speed and detectivity self-powered photodetector via scalable spray coating process

Rapid advancements in perovskite materials have led to potential applications in various optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. Due to good photoelectric properties, perovskite enables low-cost and comparable performance in terms of responsivity, detectivity, and speed to those of the silicon counterpart. In this work, we utilized triple cation perovskite, well known for its high performance, stability, and wide absorption range, which is crucial for broadband photodetector applications. To achieve improved detectivity and faster response time, graded multilayer perovskite absorbers were our focus. Sequential spray deposition, which allows stacked perovskite architecture without disturbing lower perovskite layers, was used to generate single, double, and triple-layer perovskite photodetectors with proper energy band alignment. In this work, we achieved a record on self-powered perovskite photodetector fabricated from a scalable spray process in terms of EQE and responsivity of 65.30% and 0.30 A W-1. The multilayer devices showed faster response speed than those of single-layer perovskite photodetectors with the champion device reaching 70 µs and 88 µs for rising and falling times. The graded band structure and the internal electric field generated from perovskite heterojunction also increase specific detectivity about one magnitude higher in comparison to the single-layer with the champion device achieving 6.82 × 1012 cmHz1/2 W−1.

Back Interface Passivation for Efficient Low-Bandgap Perovskite Solar Cells and Photodetectors.

Low-bandgap (Eg~1.25 eV) mixed tin-lead (Sn-Pb) perovskites are promising candidates for efficient solar cells and self-powered photodetectors; however, they suffer from huge amounts of defects due to the unintentional p-type self-doping. In this work, the synergistic effects of maltol and phenyl-C61-butyric acid methyl ester (PCBM) were achieved to improve the performance of low-bandgap perovskite solar cells (PSCs) and unbiased perovskite photodetectors (PPDs) by passivating the defects and tuning charge transfer dynamics. Maltol eliminated the Sn-related traps in perovskite films through a strong metal chelating effect, whereas PCBM elevated the built-in electric potential and thus improved voltage through the spike energy alignment. Combining both advantages of maltol and PCBM, high-quality perovskite films were obtained, enabling low-bandgap PSCs with the best efficiency of 20.62%. Moreover, the optimized PSCs were further applied as self-powered PPDs in a visible light communication system with a response time of 0.736 μs, presenting a satisfactory audio transmission capability.

High-performance Self-powered Perovskite Photodetector Based On Cesium Iodide Doped Spiro-OMeTAD Hole Transport Material

Hole transport materials play an essential role in the performance of perovskite detectors (PDs). Therefore, hole transport materials with excellent performance can significantly promote photoinduced holes' extraction rate and mobility. Spiro-OMeTAD, a small organic molecular material, has high solubility and excellent film-forming properties and is ideal for the hole transport layer (HTL) of photodetectors. In this work, a small amount of CsI is introduced into Spiro-OMeTAD together with Li-TFSI and TBP as additives. It is found that CsI and TBP formed a complex, which inhibited the agglomeration of Li-TFSI in Spiro-OMeTAD, thus preventing the rapid evaporation of TBP from leaving some cracks Spiro-OMeTAD. The photodetectors exhibit broadband response from near-ultraviolet to near-infrared (300–800 nm), achieving fast response (rise/fall time is 54.1/10.7 μs) and low dark current density (9.72 ×10−10 A cm−2). The detector can be self-powered at zero bias voltage, the external quantum efficiency (EQE) is 88%, the Responsivity (R) is 0.48 A W−1, and the detectivity (D*) is close to 2.7 × 1013 Jones. When the photovoltaic detector is placed in a nitrogen-filled glove box without special packaging for more than two months, the EQE remains 98.1% of the original. This study provides a simple method for fabricating a large area of high-performance planar PDs.

Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector

The explosive demand for a wide range of data processing has sparked interest towards a new logic gate platform as the existing electronic logic gates face limitations in accurate and fast computing. Accordingly, optoelectronic logic gates (OELGs) using photodiodes are of significant interest due to their broad bandwidth and fast data transmission, but complex configuration, power consumption, and low reliability issues are still inherent in these systems. Herein, we present a novel all-in-one OELG based on the bipolar spectral photoresponse characteristics of a self-powered perovskite photodetector (SPPD) having a back-to-back p+-i-n-p-p+ diode structure. Five representative logic gates (“AND”, “OR”, “NAND”, “NOR”, and “NOT”) are demonstrated with only a single SPPD via the photocurrent polarity control. For practical applications, we propose a universal OELG platform of integrated 8 × 8 SPPD pixels, demonstrating the 100% accuracy in five logic gate operations irrelevant to current variation between pixels.

Early Crystal Growth Suppression by Washing Solvent for Efficient Self-Powered Perovskite Photodetector

Early Crystal Growth Suppression by Washing Solvent for Efficient Self-Powered Perovskite Photodetector

High-performance and stability bifacial flexible self-powered perovskite photodetector by surface plasmon resonance and hydrophobic treatments

Flexible semitransparent photodetectors based on perovskites provide merits in terms of light weight and bifacial advantages but suffer from poor stability. To simultaneously enhance the performance and stability of flexible perovskite photodetectors (PPDs), silver (Ag) nanoparticles are incorporated to improve the responsiveness through the surface plasmon resonance (SPR) effect in the bulk of perovskite layer, and block copolymer F68 is employed to increase the surface hydrophobicity of perovskite film to keep long-term stable devices. [email protected] pyrrolidone (PVP) core shell structure enables the sufficiently enhanced film light absorption and device quantum efficiency following the SPR response curve, the amphiphilic F68 make the perovskite less vulnerable to humid ambient exposure. Moreover, the sputtered transparent indium tin oxide back electrode enables the double facial operability of our flexible self-powered photodetectors with a bifacial factor of 80% and improved stability as well. Addressing the poor responsiveness and instability issues extends the potential broad applications of our bifacial flexible perovskite photodetectors.

Lead–halide perovskites for next-generation self-powered photodetectors: a comprehensive review

Metal halide perovskites have aroused tremendous interest in optoelectronics due to their attractive properties, encouraging the development of high-performance devices for emerging application domains such as wearable electronics and the Internet of Things. Specifically, the development of high-performance perovskite-based photodetectors (PDs) as an ultimate substitute for conventional PDs made of inorganic semiconductors such as silicon, InGaAs, GaN, and germanium-based commercial PDs, attracts great attention by virtue of its solution processing, film deposition technique, and tunable optical properties. Importantly, perovskite PDs can also deliver high performance without an external power source; so-called self-powered perovskite photodetectors (SPPDs) have found eminent application in next-generation nanodevices operating independently, wirelessly, and remotely. Earlier research reports indicate that perovskite-based SPPDs have excellent photoresponsive behavior and wideband spectral response ranges. Despite the high-performance perovskite PDs, their commercialization is hindered by long-term material instability under ambient conditions. This review aims to provide a comprehensive compilation of the research results on self-powered, lead–halide perovskite PDs. In addition, a brief introduction is given to flexible SPPDs. Finally, we put forward some perspectives on the further development of perovskite-based self-powered PDs. We believe that this review can provide state-of-the-art current research on SPPDs and serve as a guide to improvising a path for enhancing the performance to meet the versatility of practical device applications.

Single-Layer ZnO Hollow Hemispheres Enable High-Performance Self-Powered Perovskite Photodetector for Optical Communication

HighlightsSingle-layer hollow ZnO hemispherical arrays behaving light trapping effect as the electron transport layer in perovskite photodetectors were first introduced.Our photodetectors showed high self-powered performances with a LDR of 120.3 dB, a detectivity of 4.2 × 1012 Jones, rise/fall time of 13/28 µs and the f−3 dB of up to 28 kHz.Benefiting from the high device performance, the photodetector was demonstrated to the directional transmission of encrypted files as the signal receiving port with super high accuracy.

An ultrafast-response and high-detectivity self-powered perovskite photodetector based on a triazine-derived star-shaped small molecule as a dopant-free hole transporting layer

A star-shaped small molecule named Triazine-Th-OMeTAD was synthesized and employed as a dopant-free hole transporting layer in an organic–inorganic hybrid perovskite photodetector for ultrafast response and high detectivity in self-power mode.

High-performance self-powered perovskite photodetector for visible light communication

Real-time, accurate, and portable detection of wireless signal is a crucial part of mobile communication. A highly sensitive detector with quickly response is the indispensable component for obtaining optical signal. Organic/inorganic hybrid perovskite (CH3NH3PbI3) has been fabricated to photodetectors with a rapid response time and high responsivity by optimizing the quality of photosensitive layer with appropriate transport layer. The devices show high responsivity of 436 mA W−1 at 753 nm, fast response time of 1.7 μs, large linear dynamic range of 106 dB, as well as 75 kHz bandwidth, all under zero bias. Attributing to these prominent characteristics, this perovskite photodetector was integrated into an optical communication system, serving as a light sensor in receiver terminal. With it, the string, text and data files are transmitted by coded light successfully, accurately and rapidly. These results show the great potential of applications in visible light detection for organic/inorganic hybrid perovskite junction photodetectors.

High-Performance, Vacuum-Free, and Self-Powered CsPbIBr2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga2O3 Interlayer

In this letter, ultra-wide-bandgap Ga2O3 as the interlayer is grown by mist chemical vapor deposition (mist-CVD) between perovskite and TiO2 electron transport layer in perovskite photodetectors (PDs). To get a stable working condition and low-cost fabrication, all-inorganic CsPbIBr2 is adopted and the expensive vacuum-deposited metal electrode is replaced by printing carbon paste. The vacuum-free, self-powered CsPbIBr2 PD with Ga2O3 interlayer achieves an obviously improved performance, with a low dark current of ${\sf 4.15}\times {\sf 10}^{- {\sf 9}}$ A, high responsibility of 0.22 A/W, fast response time of $1.83\mu \text{s}$ , and high peak specific detectivity of ${\sf 1.83}\times {\sf 10}^{\sf 12}$ Jones. This work provides a strategy to develop high-performance self-powered PDs with the ultra-wide-bandgap Ga2O3 interlayer and a reduced cost.