Self-powered Perovskite Photodetectors Research Articles

Perovskite Transparent Conducting Oxide for the Design of a Transparent, Flexible, and Self-Powered Perovskite Photodetector.

Transparent and flexible electronic devices are highly desired to meet the great demand for next-generation devices that are lightweight, flexible, and portable. Transparent conducting oxides (TCOs), such as indium-tin oxide, serve as fundamental components for the design of transparent and flexible electronic devices. However, indium is rare and expensive. Herein, we report the fabrication of low-cost perovskite SrVO3 TCO films on transparent and flexible mica substrates and further demonstrate their utilization as a TCO electrode for building a transparent, flexible, and self-powered perovskite photodetector. Superior stable optical transparency and electrical conductivity are retained in SrVO3 after bending up to 105 cycles. Without an external power source, the constructed all-perovskite photodetector exhibits a high responsivity (42.5 mA W-1), fast response time (3.09/1.23 ms), and an excellent flexibility and bending stability after dozens of cycles of bending at an extreme 90° bending angle. Our results demonstrate that low-cost and structure-compatible transition metal-based perovskite oxides, such as SrVO3, as TCO electrodes have huge potential for building high-performance transparent, flexible, and portable smart electronics.

Fabrication of rapid response self-powered photodetector using solution-processed triple cation lead-halide perovskite

Self-powered photodetectors (PDs) are suitable for application in smart systems, image sensing and optical communications. Herein, a self-powered PD based on triple cation lead-halide perovskite (TCLP) is reported. We showed the effect of bromide concentration on the optical and structural properties of the TCLP films. Additionally, an environmental stability test was conducted and it was found that TCLP with 10% Br can remain stable for up to 128 days after exposure to ambient air. Using this material, a self-powered perovskite PD was fabricated and demonstrated an impressive performance with a responsivity of 0.52 A W−1, detectivity of 8.8 × 1012 Jones, on/off ratio of 7.3 × 105, and a rapid rise and decay time of 19 μs and 21 μs, respectively. This work offers a useful insight into the effects the fabrication method of the thin film plays in building low-cost, stable, and high-performance self-powered PDs for application in structural health monitoring, imaging, optical communication, and biomedical sensing.

Nested Inverse Opal Perovskite toward Superior Flexible and Self-Powered Photodetection Performance.

Flexible and self-powered perovskite photodetectors have attracted tremendous research interests due to their applications in wearable and portable devices. However, the conventional planar structured photodetectors are always accompanied with limited device performance and undesired mechanical stability. Herein, a nested inverse opal (NIO) structured perovskite photodetector via a facile template-assisted spin-coating method is reported. The coupling effect of enhanced light capture, increased carrier transport, and improved perovskite film quality enables NIO device to exhibit superior photoresponse performance. The NIO photodetector exhibits a high responsivity of 473 mA W-1 and detectivity up to 1.35 × 1013 Jones at 720 nm without external bias. The NIO structure can efficiently release mechanical stress during the bending process and the photocurrent has no degradation even after 500 cycles of bending. Moreover, the unencapsulated NIO device can operate for over 16 d under ambient conditions, presenting a significantly enhanced environmental stability compared to the planar device. This work demonstrates that deliberate structural design is an effective avenue for constructing self-powered, flexible, and stable optoelectronic devices.

Self-powered photodetectors based on CsxDMA1-xPbI3 perovskite films with high detectivity and stability

Metal halide perovskites are widely studied in photodetection applications due to their outstanding optical and electrical properties. However, it is still a challenge to develop self-powered perovskite photodetectors with all the characteristics of high photoresponse performance, broad spectral response range, and excellent long-term stability. Herein, we demonstrate the high-performance self-powered photodetectors based on optimized CsxDMA1-xPbI3 (0.7 < x < 1) perovskite films. By adjusting the solution concentration and molar ratio of CsI/DMAPbI3 in the perovskite precursor, the dark current of devices was decreased significantly by three orders of magnitude and the light current of devices was improved at the same time. Systematic investigations have revealed that the improvement of device performance originates from the reduced bandgap, decreased trap density and increased film thickness of the optimized perovskite films. The optimal self-powered photodetectors display broad spectral response range (300–750 nm), high specific detectivity (>1 × 1013 Jones), fast response, and excellent long-term stability. These intriguing results indicate that CsxDMA1-xPbI3 perovskite films have tremendous application potential in future self-powered photoelectrical detection technology.

Ga-doped ZnO nanorod scaffold for high-performance, hole-transport-layer-free, self-powered CH3NH3PbI3 perovskite photodetectors

The use of aligned one-dimensional nanostructures as scaffolds in organic-inorganic hybrid perovskite photodetectors (PDs) has attracted significant attention due to their large surface area-to-volume ratio and efficient electron transport capability in the radial direction. Here, we report CH3NH3PbI3 (MAPbI3) perovskite photodetectors (PDs) with Ga-doped ZnO nanorods (GZO NRs), prepared by the water bath method, as a scaffold-structure electron transport layer (ETL). Our MoO3 hole transport layer (HTL) based perovskite PDs using GZO NRs as a scaffold showed a larger light/dark current (Iph/Idark) ratio, higher responsivity and detectivity than those of the undoped ZnO NRs/MAPbI3 devices at zero bias. These enhancements are attributed to the incorporation of Ga atoms into the ZnO NRs, which reduce the density defect states of ZnO NRs and improves the performance of MAPbI3 perovskite PDs. In addition, by taking advantage of the GZO NRs scaffold structure, a HTL-free perovskite PD was prepared by using graphite electrodes. The graphite-connected device shows self-powered PD performances with an Iph/Idark ratio of ~2.5 × 103, responsivity of above 0.3 A/W and detectivity of 1.3 × 1012 Jones, all of which are comparable with those of MoO3 HTL based perovskite PDs.

Polarized Ferroelectric Field-Enhanced Self-Powered Perovskite Photodetector

The hybrid organic–inorganic perovskites have been considered as promising candidates for high-performance photodetectors. However, how to fabricate self-powered broadband perovskite photodetectors with tunable photoresponse is still challenging. Herein, we design, for the first time, a ferroelectric semiconductor SrTiO3 (STO) and perovskite film hybrid structure based photodetector. After applying appropriate poled bias, the hybrid photodetector exhibits higher responsivity and faster response speed as compared to an unpoled device and a device without an STO ferroelectric interlayer. By optimizing the STO interlayer density, the positively poled photocurrent and response speed are enhanced to 0.956 mA and 0.1 s at zero bias, respectively. The corresponding responsivity is as high as 0.73A/W at a wavelength of 550 nm, which is much higher than that of the device without an STO interlayer. The improved performance is attributed to the fact that positively polarized STO layers can provide a built-in potent...

High-Stability, Self-Powered Perovskite Photodetector Based on a CH3NH3PbI3/GaN Heterojunction with C60 as an Electron Transport Layer

We reported first photodetectors based on a CH3NH3PbI3/GaN heterojunction with or without an electron transport layer (ETL). Through the investigation, the device without an ETL showed good sensitivity, high stability, and repeatability. Particularly, when C60 was applied as the ETL, the device showed a self-powered characteristic with high stability. The best self-powered device with 6 nm C60 displayed an on/off ratio of greater than 5000, peak responsivity of 0.198 A/W, and detectivity of 7.96 × 1012 cm Hz1/2/W, which is comparable with the other reports. The high performance mentioned above was attributed mainly to the C60 layer, which can reduce the density of trap states and passivate the grain boundaries of the CH3NH3PbI3 absorbing layer to facilitate intermolecular charge transport.

Hybrid Organic–Inorganic Perovskite Photodetectors

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field.

Enhanced photoresponse of self-powered perovskite photodetector based on ZnO nanoparticles decorated CsPbBr3 films

We demonstrate enhanced performance of solution-processed photodetectors composed of all-inorganic CsPbBr3 perovskite films with ZnO nanoparticles (NPs) decoration. Introducing ZnO NPs into CsPbBr3 precursor solution results in the film with more uniformly and compactly distributed crystalline grains. ZnO NPs can also promote the transport of photon-generated carriers from the central CsPbBr3 absorption layer to the lateral electrodes. Meanwhile, the asymmetry electrodes, i.e., indium tin oxide and silver, of the photodetectors create a built-in electric field driving the photodetectors operation without external bias voltage. Compared to the photodetectors without ZnO decoration, the fabricated all-inorganic CsPbBr3:ZnO photodetectors achieve a comparable rise time of 0.409s, a fall time of 17.92ms, and an on/off ratio of 12.86 without external bias source.

High-performance self-powered perovskite photodetector with a rapid photoconductive response

Here we report the development of a self-powered high-speed perovskite Schottky junction photodiode, which is very important for next-generation electronic devices.