Self-aligned Ion Implantation Research Articles

Fabrication of green-emitting monolithic GaP light-emitting diode displays by laser-induced ablation and ion implantation

A novel and simple method for the fabrication of green-emitting monolithic GaP:N displays comprises pulsed ruby laser irradiation-induced, self-aligned ablation combined with self-aligned ion implantation. The different fabrication steps are described. With this technology, displays with reduced optical crosstalk and hence very high contrast in the range of 1:100 are obtained.

Self-aligned ion implant masking for CMOS VLSI technology

Conventional self-aligned ion implantation masking is often inadequate in CMOS VLSI fabrication. We describe a method of increasing this ion implant masking with minimal additional processing. Scanning electron micrographs portray the enhanced ion implant masking.

Short Channel MOS FET's Fabricated by Self-Aligned Ion Implantation and Laser Annealing

Short channel MOS FET's are successfully fabricated by a combination of selfaligned ion implantation and laser annealing, both of poly-Si gate electrodes. The threshold voltage vs. gate length relation and the overlapping capacitance between gate and drain are improved as a result of the extremely small lateral diffusion of implanted atoms.

Short-channel MOS FET’s fabricated by self-aligned ion implantation and laser annealing

Short-channel MOS FET’s are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage–vs–channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.