Abstract
Short-channel MOS FET’s are successfully fabricated using Q-switched ruby laser irradiation on As-implanted sources and drains. Implantation and laser irradiation are both self-aligned by the polysilicon gate electrodes. The threshold-voltage–vs–channel-length relation is improved as a result of the extremely limited lateral diffusion of implanted As atoms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
