Seebeck Coefficient Research Articles

First principle investigations of opto-electronic and thermoelectric response of A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds

We have investigated the structural, electronic, optical, and thermoelectric behavior of halide-based double perovskites A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds to reveal their potential in various opto-electronic and thermoelectric applications using first-principle calculations. For the computation of the various properties of A2TlAsX6 (A = K, Rb; X = Cl, Br) compounds, we have used approximations available within density functional theory (DFT). The energy bands and density of states have been used to elucidate the electronic response of the studied compounds, while the interpretation of optical properties is presented in terms of dielectric tensor, absorption coefficient, reflectivity, refraction and energy loss spectra. The investigated compounds exhibit a direct band gap within the energy range of 1.36 to 2.24 eV, indicating the promising nature of these compounds for diverse optoelectronic applications. Moreover, thermoelectric properties such as the figure of merit, power factor, Seebeck coefficient, specific heat, electric and thermal conductivity have also been computed for the studied compounds. Our investigation unveils the remarkable optoelectronic characteristics of the studied perovskites, which can be attributed to their advantageous bandgap and highly effective light absorption capabilities. Furthermore, these perovskites showcase exceptional thermodynamic stability, elevated electrical conductivity, favorable figure of merit (ZT) values, and reduced thermal conductivities. These findings suggest their suitability for applications in optoelectronic devices and thermoelectric applications. In this study, it is found that A2TlAsBr6 compounds exhibit significant absorption in the visible spectrum, rendering them more favorable for optoelectronic applications compared to A2TlAsCl6 compounds. Conversely, for thermoelectric applications, the Cl-based perovskites studied show greater promise than their Br-based counterparts. The modified Becke–Johnson (mBJ) potential emerges as the most precise approach for analyzing the electronic, optical, and thermoelectric characteristics of A2TlAsX6 (where A = K, Rb; X = Cl, Br) perovskites, surpassing other approximations utilized in present study.

Recent trends and future perspectives of thermoelectric materials and their applications.

This review explores the ever-evolving landscape of thermoelectric materials, focusing on the latest trends and innovations in ceramics, thermally conductive gel-like materials, metals, nanoparticles, polymers, and silicon. Thermoelectric materials have garnered significant attention for their capability to convert waste heat into electrical power, positioning them as promising candidates for energy harvesting and cooling applications. This review distinguishes itself by highlighting recent advancements in synthesis methods, advanced doping strategies, and nanostructuring techniques that have markedly enhanced material performance. It provides a comprehensive analysis of the controlled properties concerning their synthesis parameters, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. Furthermore, this work delves into the emerging applications of thermoelectric devices across diverse fields, including automotive, aerospace, wearable electronics, and industrial waste heat recovery. By offering forward-looking insights, this review outlines thermoelectric devices' challenges and future prospects, underscoring their potential to contribute to sustainable energy solutions and efficient thermal management systems. By integrating current trends with future projections, this review offers a timely and comprehensive roadmap for researchers and engineers dedicated to advancing next-generation thermoelectric technologies.

Recent trends and future perspectives of thermoelectric materials and their applications.

This review explores the ever-evolving landscape of thermoelectric materials, focusing on the latest trends and innovations in ceramics, thermally conductive gel-like materials, metals, nanoparticles, polymers, and silicon. Thermoelectric materials have garnered significant attention for their capability to convert waste heat into electrical power, positioning them as promising candidates for energy harvesting and cooling applications. This review distinguishes itself by highlighting recent advancements in synthesis methods, advanced doping strategies, and nanostructuring techniques that have markedly enhanced material performance. It provides a comprehensive analysis of the controlled properties concerning their synthesis parameters, such as electrical conductivity, Seebeck coefficient, and thermal conductivity. Furthermore, this work delves into the emerging applications of thermoelectric devices across diverse fields, including automotive, aerospace, wearable electronics, and industrial waste heat recovery. By offering forward-looking insights, this review outlines thermoelectric devices' challenges and future prospects, underscoring their potential to contribute to sustainable energy solutions and efficient thermal management systems. By integrating current trends with future projections, this review offers a timely and comprehensive roadmap for researchers and engineers dedicated to advancing next-generation thermoelectric technologies.

Introduction of interstitial Cu atoms is beneficial to improving the thermoelectric performance of TiNiSn

The effect of interstitial Cu on the thermoelectric properties of TiNiSn was evaluated by microwave and spark plasma sintering. It is demonstrated that the interstitial Cu optimize the carrier concentration and mobility, and that segregation of Cu at grain boundaries makes an additional contribution to the electrical conductivity. The goal of great increasing the electrical conductivity while maintaining a high Seebeck coefficient is realized, resulting in a maximum of 3703.6 μWm−1K−2 at 673 K. Furthermore, the samples enhance the high-frequency phonon scattering by introducing more point defects. And the mass fluctuation scattering and stress field fluctuation scattering induced by the interstitial Cu further decrease the lattice thermal conductivity to 1.91 Wm−1K−1 at 773 K, a reduction of 64.7 % compared to the pure sample. The dimensionless figure of merit (ZT) of the TiNiCu0.055Sn is even higher by 78.7 %, with a maximum of 0.62.

Structural, electronic, magnetic, and thermoelectric properties of half Heusler alloys ZrCo1-XFeXSb (X = 0, 0.25, 0.5, 0.75, 1): A DFT study

The structural, electronic, magnetic, and thermoelectric properties of half-Heusler alloys ZrCo1-XFeXSb (X = 0, 0.25, 0.5, 0.75, 1) are investigated using the density functional theory. It is evident that ZrCoSbis a non-magnetic semiconductor. This study investigates the influence of substituting Fe for Co on the electronic structure and magnetic characteristics of ZrCoSb. The alloys transform into half-metallic ferromagnets as Fe substitutes Co. The indirect band gap of the ZrCo1-XFeXSb alloys decreases with increasing Fe content. The phonon dispersion curve is studied to determine the structural stability. The calculated values for the elastic constant for each composition satisfy the criteria for mechanical stability. To analyse its thermoelectric properties, the semi-classical Boltzmann transport theory is used to determine the Seebeck coefficients, electrical and thermal conductivities, and power factor as a function of temperature.

Roles of nonlocal electron-phonon coupling on the electrical conductivity and Seebeck coefficient: A time-dependent DMRG study

Roles of nonlocal electron-phonon coupling on the electrical conductivity and Seebeck coefficient: A time-dependent DMRG study

A DFT insight of the electronic, thermodynamic, and thermoelectric properties of RuO2

In this study, we explore the structural, electronic, thermodynamic, and thermoelectric properties of RuO2 using density functional theory. The derived equilibrium structural parameters agree with other theoretical and experimental results. The widely used modified Becke–Johnson (mBJ-GGA) potential is adopted for accurate electronic band gap estimation. To incorporate the effect of the extended orbital of the Ru atom, spin-orbit coupling has been used in combination with the mBJ potential. The investigation of electronic properties revealed an indirect semi-conducting nature with a band gap along the W-L symmetry. The calculated band gaps are 1.685 and 1.658 eV from mBJ and mBJ + SOC, respectively. The dynamical stability is tested and verified by calculating the phonon dispersion curve. We have employed the quasiharmonic approximation-based Gibbs2 package to determine the pressure and temperature-dependent thermodynamical parameters, such as cell volume, Debye temperature, heat capacity, entropy, and thermal expansion coefficient. This study uses the BoltzTraP simulation algorithm to determine the thermoelectric parameters such as the Seebeck coefficient, electrical conductivity, and thermal conductivity.

Unveiling the electronic, optical, thermoelectric, and magnetic properties of novel Ba2GdMO6 (M = Pa, Ta) via DFT calculation

The optoelectronic, thermoelectric, and magnetic properties of novel Ba2GdMO6 (M = Pa, Ta) double perovskites have been computed with the spin-polarized density functional investigation. The calculations are performed using the FP-LAPW method in Wein2K code, by employing the GGA + U approximations. The band structures and density of states analysis show that Ba2GdPaO6 is an indirect band gap semiconductor with band gap values of 3.0 eV and 3.1 eV in the up and down spin channels, respectively. The Ba2GdTaO6 is also predicted as a semiconducting material with a direct band gap of 2.9 eV and 3.0 eV in up and down spin channels. The optical characteristics of the materials, such as the dielectric constants, absorption coefficient, reflectivity, loss function, and refractive index are computed. The optical results reflect that the materials are excellent choices for high-energy absorbent. The Seebeck coefficient increases beyond the temperature of 300 K for Ba2GdPaO6 and 400 K for Ba2GdTaO6. The increase in the Seebeck coefficient values suggests that these materials are p-type semiconducting. The ferromagnetic nature of the materials has been confirmed by predicting the ferromagnetic phase to be the most stable state. The total magnetic moments of the materials are found equal to 7 µB.

Phase Transitions and Thermoelectric Properties of Charge-Compensated ZnxCu12-xSb4Se13.

In this study, we investigated the phase transitions and thermoelectric properties of charge-compensated hakite (ZnxCu12-xSb4Se13) as a function of Zn content. Based on X-ray diffraction and a differential scanning calorimetric phase analysis, secondary phases (permingeatite and bytizite) transformed into hakite depending on the Zn content, while Zn2Cu10Sb4Se13 existed solely as hakite. Nondegenerate semiconductor behavior was observed, exhibiting increasing electrical conductivity with a rising temperature. With an increase in Zn content, the presence of mixed phases of hakite and permingeatite led to enhanced electrical conductivity. However, Zn2Cu10Sb4Se13 with a single hakite phase exhibited the lowest electrical conductivity. The Seebeck coefficient exhibited positive values, indicating that even after charge compensation (electron supply) by Zn, p-type semiconductor characteristics were maintained. With the occurrence of an intrinsic transition within the measured temperature range, the Seebeck coefficient decreased as the temperature increased; at a certain temperature, Zn2Cu10Sb4Se13 exhibited the highest value. Thermal conductivity showed a low temperature dependence, obtaining low values below 0.65 Wm-1K-1. A power factor of 0.22 mWm-1K-2 and dimensionless figure of merit of 0.31 were achieved at 623 K for ZnCu11Sb4Se13.

Study of alkaline metals hydrides RbXH3 (X = Mg/Ca/Sr/Ba) for green energy and hydrogen storage applications

The potential of hydrogen as an energy source has positioned hydrogen storage as a prominent research domain in the current era. Innovative perovskite compounds have emerged as a focal point for investigating hydrogen storage applications. In this study, we have investigated the RbXH3 (X = Mg/Ca/Sr/Ba) perovskite hydrides by density functional theory (DFT). Our exploration encompasses the analysis of electronic structures, mechanical stability, elastic properties, and optical and thermoelectric response. The cubic crystal structures of RbXH3 are revealed, with lattice constants of 4.13, 4.54, 4.82, and 5.17 Å for X = Mg, Ca, Sr, and Ba, respectively. Electronic structure calculations indicate ionic bonding with a wide bandgap reduced with increasing size of X. Mechanical stability, essential for meeting the Born stability criterion, is scrutinized, whereas Pugh criteria suggest a ductile and hard nature for these materials. Thermoelectric characteristics regarding electrical and thermal conductivity, Seebeck coefficient, and power factors are elaborated. The figure of merit emphasizes their suitability for thermoelectric devices. The Gravimetric ratios indicate the hydrogen storage capability, potentially contributing to various transportation and power applications.

Excess noise and thermoelectric effect in magnetron-sputtered VO2 thin films

This work presents the excess noise and thermoelectric (Seebeck) measurements on polycrystalline vanadium dioxide (VO2) thin films. Noise spectral power density (SPD) of current fluctuations in the semiconducting (SC) phase had a typical flicker noise (f−γ) characteristic with an average slope parameter γ of 1.13. Normalized SPD (Sn) values obtained in the SC-phase indicate that the noise originates in the bulk of the film. On the contrary, in the metallic (M)-phase, γ values were greater than unity, and the observed Sn values indicated that the origin of the noise is most likely from the contacts or surface rather than the bulk. A general decrease was observed in Sn by a factor of 4–5 from the SC- to M-phase. Moreover, Sn in the SC-phase showed no temperature dependence. An interpretation based on the number of charge carrier fluctuations in Hooge's model led to an unrealistically high Hooge parameter and had to be ruled out. We propose that the fluctuations are related to the mobility fluctuations of carriers arising primarily from grain-boundary scattering which explains the observed characteristics well. The Seebeck coefficients (S) obtained under both heating and cooling schedules showed the n-type nature of magnetron-sputtered VO2 films in the SC-phase. Differently, in the M-phase, the S value was positive. The S values obtained from the cooling schedule signified the low percolation threshold of the metal-to-insulator transition already demonstrated for VO2 thin films grown on r-cut sapphire using the Efros–Shklovskii percolation model.

Thermoelectric properties of geopolymers with iron ore mine waste: A case study for energy management

One of the challenges facing our current and future generations is the effective management of energy and its acquisition through more sustainable means. One solution is using materials capable of generating energy from temperature differences. Construction materials could be the answer, as they are already integrated into structures and have good thermoelectric properties. Geopolymers, emerge as a promising candidate due to their enhanced sustainability compared to alternative materials. Our research explored the use of geopolymers for electricity generation from heat. To minimize the usage of kaolin, we incorporated 50 % of two mining residues obtained from old mines located in Portugal. This approach optimizes the utilization of mineral resources and mitigates the environmental impact. Various methods were used to characterize this material, such as X-ray diffraction, simple compressive strength tests and evaluation of thermoelectric properties, such as the Seebeck coefficient and figure of merit. The geopolymers tested exhibit semiconductor characteristics, demonstrating poor heat conduction due to their low thermal conductivity. Regarding thermoelectric properties, these materials display N-type behavior, with a Seebeck Coefficient between −643 μV/°C and −2760 μV/°C. These findings underscore the advantages of utilizing this sustainable material for the widespread implementation of energy management in buildings on a large scale.

Enhanced thermoelectric performance of MoSe2 under high pressure and high temperature by suppressing bipolar effect

The electrical transport property of layered MoSe2 has a strong response to high pressure by enhancing the inter-layer interaction. However, the narrowed bandgap under high pressure will cause the bipolar effect (i.e., the thermally excited minority carriers contribute to a Seebeck coefficient with the opposite sign to the majority carriers) at high temperatures to degrade the thermoelectric (TE) performance. Hence, suppressing the bipolar effect is important to optimize the TE performance of MoSe2 under high pressure and high temperature (HPHT). In this study, the degradation of TE performance caused by the bipolar effect under HPHT in MoSe2 is investigated. It is found that in MoSe2, the electrical conductivity was improved significantly by pressure; however, the bipolar effect led to a significantly degraded Seebeck coefficient at high temperatures. By injecting massive carriers beforehand, the bipolar effect was suppressed to make a dominant type of p-type charge carries, achieving an increased Seebeck coefficient with increasing temperature, resulting in an improved power factor from 29.3 μW m−1 K−2 in MoSe2 to 285.7 μW m−1 K−2 in Mo0.98Nb0.02Se2 at 5.5 GPa, 1110 K. Combined with the reduced thermal conductivity by point defect scattering on phonons, a maximum ZT value of 0.11 at 5.5 GPa, 1110 K. This work highlights the significance of suppressing the bipolar effect under HPHT for optimizing TE performance in such layered semiconductors.

A DFT investigation on halide double perovskites X2ScTlI6 (X= Rb, Cs) for thermoelectric and optoelectronic applications

The present study conducted by first-principles calculations to explore the physical properties of Rb2ScTlI6 and Cs2ScTlI6 double perovskite compound utilizing the FP-LAPW method within the framework of DFT, as implemented in the WIEN2K software package. The electronic and optical characteristics of double perovskite materials were assessed utilizing the TB-mBJ functional, while the structural properties were analyzed employing the GGA-PBE approximation. Electronic properties demonstrated the semiconducting nature of the materials. Optical properties including the dielectric function, absorption coefficient, and reflectivity were computed, affirming the suitability of the compound for device applications across various spectral regions (infrared, visible, and ultraviolet). Additionally, this research delves into the thermoelectric properties, examining factors such as the ratio of thermal to electrical conductivity, a key metric known as the figure of merit, and the Seebeck coefficient. The study reveals that ZT exhibits higher values at lower temperatures but declines as temperature increases. ZT calculations demonstrate minute variations within 200–800 K and computed parameter values are quite favorable for thermoelectric applications of these materials in the future. Notably, this research contributes novelty by investigating the thermoelectric properties of Rb2ScTlI6 and Cs2ScTlI6 double perovskite, encompassing electrical conductivity, Seebeck coefficient, and the figure of merit.

Role of Bi/Te co-dopants on the thermoelectric properties of SnSe polycrystals: an experimental and theoretical investigation

A sustainable solution to the energy crisis may be found in thermoelectric materials and generators, capable of transforming thermal energy into electrical energy or vice versa. SnSe is one of the emerging thermoelectric materials with distinctive properties. The main advantages of this compound are earth-abundant, inexpensive, non-toxic and it is also known for its high thermoelectric performance. Here we prepared Bi/Te co-doped SnSe polycrystals; whereas, Bi and Te are added with different compositions such as (x = 0.0,0.02,0.04,0.06 and y = 0.03) in (Sn1-xBixSe1-YTeY) matrix by using the solid-state reaction method. XRD data confirms the samples belong to the orthorhombic crystal system with the Pnma space group. DFT calculations were used to see structural stability and electronic properties for pure and doped SnSe samples. Temperature-dependent semiconducting behavior of the samples has been demonstrated by electrical resistivity. The Seebeck coefficient, correlated with carrier concentration and mobility, validates the p-type behavior for the pristine samples and the n-type behavior for co-doped samples. The dominant behavior of phonon scattering has been demonstrated by thermal conductivity analysis. After co-doping there is decrement in total thermal conductivity was observed which 1.3 times lower than SnSe. A theoretical calculation was used to validate experimental results to estimate electrical properties, Seebeck coefficient, specific heat capacity, thermal conductivity, and power factor using Quantum espresso code with Boltzmann transport Equation. 4% Bi-doped sample displayed a significant increment in electrical conductivity and an enhanced Seebeck coefficient, which led to the power factor enhancement of approximately 2.0 times in contrast to the pristine sample and enhanced ZT of about 0.055 which is 3.43 times higher than the pristine SnSe.Graphical abstract

Incorporation of Ni in Cu2SnSe3: An insight into the reduction in electrical resistivity

In the present study, Cu2SnSe3/x% Ni (x = 0, 1, 2 and 3 wt%) composite thermoelectric were synthesized using solid-state reaction followed by sintering in the mid-temperature range 300–570 K. XRD studies revealed that the samples have a diamond cubic structure with the F4¯3m space group. Scanning Electron Microscopy indicates that the synthesized samples possess homogeneous surfaces with fewer pores. The sample with 3% Ni exhibits an approximately eight-fold increase in electrical conductivity than the pure sample at 307 K. However, the addition of Ni decreased the Seebeck coefficient, resulting in a lower overall power factor (PF) for the composites. The highest PF of ∼420 μW/mK2, was observed in the pristine sample at 570 K. Although Ni addition improves electrical properties, it negatively impacts the overall thermoelectric performance due to the significant reduction in Seebeck coefficient, thereby lowering the overall power factor.

Fermi energy modulation by tellurium doping of thermoelectric copper(I) iodide

Copper(I) iodide (CuI) is the leading inorganic p-type transparent conductor, attracting major attention for its promising optoelectronic properties and facile growth methods, although, commercial uptake is limited due to its as-of-yet insufficient electrical conductivity. Doping CuI with the chalcogens (O, S, Se, Te) is a viable route to tune its electrical conductivity for applications such as in thin film transistors, hole transport layers in solar cells, and transparent thermoelectric generators. The heaviest chalcogen element, Te, is yet to be explored in heavily intrinsically p-type doped CuI at non-alloying concentrations, the subject of the present work. We report the effects of tellurium at the boundary between the doping and alloying regime (up to a maximum of 2.4 % Te) in CuI thin films and investigation the variation in the thermoelectric properties and electronic band structure of the material. Ion implanting tellurium into CuI led to a progressive reduction in the films' work functions from 4.9 eV to 4.5 eV while the ionization potential remained unchanged, measured through photoemission spectrometry. This signified a modulation of the Fermi energy relative to the valence band edge, having a major effect on the materials' electrical conductivity and Seebeck coefficient, the former decreasing by 3 orders of magnitude, while the latter increased by 80 %. We conducted density functional theory (DFT) calculations to elucidate the effect of tellurium doping on the band structure of CuI. Tellurium doping corroborated the shift of Fermi energy, the incorporation of impurity acceptor states deeper into the band gap, in addition to disordering the valence band maximum. This work shows that, the Fermi energy in heavily p-type doped CuI can be moved away from the valence band through Te doping in addition to introducing band disorder, useful for controlling the hosts’ transport properties.

A comprehensive first-principles investigation of structural, electronic, vibrational, optical, thermodynamic and thermoelectric properties of LiZnAs

The structural, electronic, vibrational, optical, thermodynamic and thermoelectric properties of Nowotny–Juza filled tetrahedral semiconductor LiZnAs under high pressure is investigated using the plane-wave pseudo-potential approach in the frame work of density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constant (a0) and bulk modulus (B0) at ambient pressure are consistent with earlier reported experiment and theoretical results. The variation in Lattice constant, Bulk modulus (B0), Young modulus (Y), Shear modulus (G), Elastic anisotropy factor (A), Poission ratio (μ), Paugh (B/G) ratio and Elastic constants with pressure is analyzed and concluded. Electronic band structure calculations reveal that with applied pressure direct band gap increases and the indirect band gap decreases. Thermodynamic properties reveals thermodynamically stability with pressurize conditions. The real and imaginary parts of the Dielectric function (ε), Refractive index (η), Extinction Coefficient (k), Optical Conductivity (s), Electron/Optical Energy Loss Function (L), Absorption Coefficient (α), Reflectivity (R) at different pressure conditions are correspondingly studied. With applied pressure the absorption spectra shows a blue shift which makes LiZnAs as potential candidates for the application of optoelectronic devices in ultraviolet frequency range. The thermoelectric properties like Seebeck coefficient (S), Electrical conductivity (σ), and Electronic thermal conductivity (k) and Power factor (PF) have been studied as a function of temperature and chemical potential. Positive value of calculated Seebeck coefficient with temperatures ensures the p-type semiconducting nature of LiZnAs. Results provides theoretical guidance for future experimental investigations and industrial applications of LiZnAs.

Powder aerosol deposited calcium cobaltite as textured P-type thermoelectric material with power factors approaching single crystal values

In this work, the thermoelectric material calcium cobaltite Ca3Co4O9 (CCO), a promising p-type conducting thermoelectric oxide with anisotropic properties, was processed by the powder aerosol deposition method (PAD) to form a dense ceramic CCO film with a thickness in the µm range. The prepared films were characterized regarding their microstructure and thermoelectric properties between room temperature and 900 °C. After heat treatment at 900 °C, the CCO PAD film in-plane shows excellent properties in terms of electrical conductivity (280 S/cm at 900 °C) and Seebeck coefficient (220 µV/K at 900 °C). The calculated power factor in-plane (ab) reaches with 1125 µW/(m K2) 40 % of the single crystal value, surpassing the known-properties of CCO bulk ceramics. Examination of the microstructure shows a strong fiber texture of the film as well as a strong coarsening of the grains during the first heat treatment up to 900 °C.

Structural, Electronic, Thermoelectric and Optical properties of 2D hexagonal Beryllium Telluride under DFT Investigation

In this study we have investigated the structural, electronic, thermoelectric and optical properties of monolayer beryllium telluride compound in the hexagonal lattice phase (h-BeTe) using the first principle calculations under density functional theory (DFT) approach. Using the frequency dependent phonon dispersion curve, we have analyzed the stability of the h-BeTe compound. The investigation of structural properties, including density of states (DOS) and band structure, demonstrates that h-BeTe is a direct bandgap semiconductor material with bandgap value of 3.054 eV. The h-BeTe compound exhibits exceptional thermoelectric behavior across a temperature range of 50-800 K, as confirmed by the calculated thermoelectric parameters, including thermal conductivity, electrical conductivity, Seebeck coefficient and figure of merit (ZT). It is vital that h-BeTe exhibits exceptional thermoelectric properties specifically, the figure of merit (ZT > 0.9) provides the efficiency of h-BeTe compound in temperature range of 300-800 K. The optical properties of h-BeTe are investigated for the first time with its interaction in applied external electric field based on various optical parameters such as real and imaginary dielectric constant, refractive index , extinction coefficient , absorption coefficient and reflectivity . The optical properties analysis reveals the monolayer hexagonal beryllium telluride to be mostly active in the visible-UV spectrum. These findings have the potential to foster scientists to explore h-BeTe experimentally for many optoelectronic applications.