Schottky Barrier Research Articles

Interconnect‐Integrated GaInP/AlGaAs Schottky Photodetector Array with Heterojunction‐Assisted Enhanced Photovoltaic Effect for Automotive Speed Measurement Systems

AbstractReducing power consumption has always been a pressing issue for integrated circuits. Currently, there is a strong interest in the development of self‐powered photodetectors with low power consumption, high quantum efficiency, and high integration. In this work, a novel GaInP/AlGaAs photodetector is developed, where the photovoltaic effect of the Schottky junction is enhanced by the assistance of underneath GaInP/AlGaAs heterojunction, achieving near unity quantum efficiency, high integration, and ultrafast response speed. A single device exhibits a responsivity (R) of 467 mA W−1 in photovoltaic mode, a specific detectivity (D*) of 1.43 × 1011 Jones, a power conversion efficiency (PCE) of 14.5%, and an external quantum efficiency (EQE) of 96.56%. Further, an interconnect integration technique is used to integrate 81 individual detector units onto a 5 × 5 mm2 chip, resulting in a detector array that significantly improves the optical response. The device array has a high frequency feature with a fast response of 19 µs and a −3 dB bandwidth of 21.34 kHz. The interconnect chip is further integrated with a STM32 chip to realize an automotive speed measurement system. This work provides a novel technological solution for a high‐frequency, highly integrated photodetector array using heterojunction‐assisted enhanced GaInP Schottky junctions.

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET

The 3.3 kV SiC MOSFETs are essential for traction applications, so it is important to investigate the reliability of the recently developed high voltage MOSFETs and power modules as they are believed to be more susceptible to the effects of basal plane dislocations (BPDs). This paper presents measurement results and analysis of bipolar degradation and threshold voltage instability in 3.3 kV SiC MOSFETs having two distinct kinds of integrated diode, conventional body diode and embedded Schottky Barrier Diode (SBD). No bipolar degradation was observed both in MOSFET with conventional body diode and with embedded SBD after accumulated test with 100 hours each of 200%, 400% and 600% rated current stress in the 3rd quadrant of operation. However, the output characteristics show 1% (~0.2 mΩ) and 2% (~0.4 mΩ) increase in on resistance (RDS(on)) and 11% (0.23 V) and 5% (0.1 V) increase in threshold voltage (VTH), respectively, after total bipolar degradation test in the case of the MOSFET with conventional body diode and up to 74 hrs of 600% rated current stress in the case of the MOSFET with embedded SBD at 70°C. A rapid large negative VTH shift was observed in the MOSFETs with embedded SBD after ~ 74 hrs of 600% rated current stress. After accumulated Bias Temperature Instability (BTI) test at 150°C, the VTH value at 25°C has increased by 9.7% (0.14 V) and 14.5% (0.2 V) for the MOSFET with conventional body diode and with embedded SBD, respectively, while RDS(on) increased by 1mΩ at 25°C and by 5mΩ at 150°C, for both types of MOSFETs.

Design of a 4H–SiC Schottky barrier FET biosensor with dual-source and dual-drain on suspended beam channel

In this paper, a Schottky barrier field effect transistor biosensor with dual-source, dual-drain, and a suspended beam channel (DSDD-SB-FET) is proposed and its biosensor performance is investigated by simulation. The simulation results show that compared with the conventional 6H–SiC Schottky barrier field effect transistor (6H-SiC-SB-FET) biosensor, the new structure proposed in this paper has superior sensitivity characteristics. The SIon is 1.83 × 108, Sgm,max is 1.44 × 108, SIon/Ioff is 1.53 × 107, and SSS is 83 % at K = 12, which are respectively 554 times, 476 times, 2.76 × 104 times, and 61 % higher than those of the 6H-SiC-SB-FET. In addition, we also investigate the effects of non-ideal filling conditions and temperature variations on its performance in practical applications, and conclude that the DSDD-SB-FET biosensor has excellent sensing performance in practical applications as well.

Single-event burnout in β-Ga2O3 Schottky barrier diode induced by high-energy proton

Single-Event Burnout (SEB) can cause hard damage to devices, leading to permanent failure. However, previous studies have rarely explored the effects of high-energy proton irradiation-induced SEB in β-Ga2O3 Schottky Barrier Diode (SBD), and the underlying mechanisms remain largely unexplored. Experimental results indicate that the reverse bias voltage during irradiation is a critical factor influencing the failure of β-Ga2O3 SBD. Compared to 300 MeV proton irradiation without bias, the introduction of a 300 V reverse bias voltage results in a significant reduction in forward current density (JF). When the reverse bias voltage reaches 400 V or higher, the 300 MeV proton induces SEB in the device. The SEM image of the damaged region reveals that the irradiated device has “voids” formed due to the melting of the Ga2O3 material. Geant 4 and TCAD simulation results indicate that the burnout phenomenon is caused by the elevated lattice temperature inside the device, which results from the implantation of secondary particles under a high reverse bias voltage. As the reverse bias voltage increases, the maximum lattice temperature of β-Ga2O3 SBD also rises. When the reverse bias voltage is sufficiently high, the local lattice temperature inside the device reaches the melting point of Ga2O3 material, ultimately leading to SEB.

Contact Resistance Engineering in WS2-Based FET with MoS2 Under-Contact Interlayer: A Statistical Approach.

One of the primary factors hindering the development of 2D material-based devices is the difficulty of overcoming fabrication processes, which pose a challenge in achieving low-resistance contacts. Widely used metal deposition methods lead to unfavorable Fermi level pinning effect (FLP), which prevents control over the Schottky barrier height at the metal/2D material junction. We propose to harness the FLP effect to lower contact resistance in field-effect transistors (FETs) by using an additional 2D interlayer at the conducting channel and metallic contact interface (under-contact interlayer). To do so, we developed a new approach using the gold-assisted transfer method, which enables the fabrication of heterostructures consisting of TMDs monolayers with complex shapes, prepatterned using e-beam lithography, with lateral dimensions even down to 100 nm. We designed and demonstrated tungsten disulfide (WS2) monolayer-based devices in which the molybdenum disulfide (MoS2) monolayer is placed only in the contact area of the FET, creating an Au/MoS2/WS2 junction, which effectively reduces contact resistance by over 60% and improves the Ion/Ioff ratio 10 times in comparison to WS2-based devices without MoS2 under-contact interlayer. The enhancement in the device operation arises from the FLP effect occurring only at the interface between the metal and the first layer of the MoS2/WS2 heterostructure. This results in favorable band alignment, which enhances the current flow through the junction. To ensure the reproducibility of our devices, we systematically analyzed 160 FET devices fabricated with under-contact interlayer and without it. Statistical analysis shows a consistent improvement in the operation of the device and reveals the impact of contact resistance on key FET performance indicators.

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults

In this work, we investigated the impact of crystallographic defects (specifically stacking faults, SFs) on the mechanisms of the current transport in 4H-SiC Schottky contacts. The electrical characteristics were studied under both forward and reverse bias. In particular, while the presence of SFs under the contact did not show a significant impact on the forward characteristics of the Schottky diode, a significant increase in the leakage current occurred under reverse bias in defective diodes. This anomalous behavior can be explained by a space-charge limited current model, consistent with the presence of a trapping state distribution in the 4H-SiC gap. An increase of the reverse bias above 30 V leads to a complete trap filling. The weak temperature-dependence of the leakage current observed at highest voltage suggests that a tunneling of the carriers through the barrier can be also present.

The study of ([formula omitted]01) plane in β-Ga2O3 crystal

This study confirms that the symmetric plane of (001) with respect to the twin boundary in β-Ga2O3 is the (1¯01), and it has been systematically characterized. X-ray diffraction has determined that diffraction peaks appear only at positions where the l component of the miller indices hkl is even, and these positions coincide with the diffraction peak positions of the (001) plane. The termination atomic arrangement of the (1¯01) plane is not exclusively composed of gallium or oxygen atoms, it exists in two forms with hanging bond densities of 1.614 × 1015/cm2 and 2.421 × 1015/cm2, respectively. Wet etching experiments on the (1¯01) plane reveal distinct defect morphologies compared to the (001) plane, indicating its suitability for distinguishing between these two planes. The Raman modes of (1¯01) plane coincide with other crystal planes. Through optical transmission spectra, X-ray photoelectron spectra, and Ultraviolet photoelectron spectra, its bandgap width Eg of 4.76 eV, the valence band maximum EVBM of 3.64 eV and the Schottky barrier height Φsurf of 1.12 eV were determined. Compared to studies of other crystal planes, it is believed that the (1¯01) plane also possesses similar application potential.

Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P<sup>+</sup> Contacts

Ohmic contacts play a major role in the signal transfer between the semiconductor device and the external circuitry. One of the main technological issues to develop high-performance SiC-based devices is the control of metal/SiC contact properties to fabricate low resistance and high stability SiC Ohmic contacts to p-type SiC. This is mostly due to intrinsic SiC characteristics like large work function, low dopant activation for p-type materials and low hole mobility. These limits are even more emphasized in SiC JBS or MPS diodes, where Schottky and Ohmic contacts on the P doped regions embedded in the active area to improve surge ruggedness are usually formed by using the same metallization process. This naturally results either in a high Schottky barrier height in the Schottky contact with consequent increase of the conduction loss at low currents or in a poorly conductive Ohmic contact, leading to reduced IFSM capability. Therefore, the optimization and control of the process parameters like for example the P+ doping concentration peak underneath the metallization layer and the annealing process temperatures is crucial to obtain a good Ohmic contact and enhance the device´s robustness against surge current.

Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer

In this study, a Schottky barrier diode with an Al/TPA-IFA/p-Si structure was fabricated using spin coating and thermal evaporation methods. Using forward and reverse bias I–V measurement, we examined the key electrical characteristics of the Al/TPA-IFA/p-Si diode, including Φb, n, Rs, and Nss; we also estimated VD, NA, EF, ∆Φb, WD, Φb and Nss using C–V measurements under the different frequencies (10, 50, 100, 500 kHz, and 1 MHz) at room temperature. Using I–V data and the Thermionic Emission (TE) theory, basic electrical parameters such as ideality factor ( n ), and barrier height ( Φb ) values were computed as 3.01 and 0.716 eV. The fundamental diode parameters are highly frequency-dependent. It was also found that the series Resistance ( Rs ) values reduced with increasing frequency, but the barrier height ( Φb ) and the width of the depletion layer ( WD ) increased. It was found that when frequency increased, the diode capacitance reduced for our new Schottky-type diode. The diode’s potential conduction mechanisms were examined through the utilization of reverse lnI−V0.5 and forward lnI−V graphs. The transport properties of Al/TPA-IFA/p-Si diode are primarily governed by ohmic conduction, Space Charge Limited Current (SCLC), and Trap Charge Limited Current (TCLC) mechanisms at low, moderate, and high voltages, respectively. It was concluded that the Poole–Frenkel Emission (PFE) mechanism was dominant for the Al/TPA-IFA/p-Si diode. Ultimately, the findings confirmed that the TPA-IFA-based diode could be obtained for the electronic application.

Estimation of Electron Drift Mobility along the <i>c</i>-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes

Electron mobility along the c-axis is the most important in SiC because the current flows along this direction in vertical SiC devices. However, previous reports on the drift mobility along the c-axis are still limited because of the difficulty of sample preparation or analysis. In this study, the authors presented the method to estimate the electron drift mobility of a lightly-doped epitaxial layer by using SiC(0001) vertical Schottky barrier diodes (SBDs). For the analyses, the effects of current spreading and series resistance were carefully considered based on experimental results obtained from SBDs with various device parameters, leading to a more accurate estimation. The mobility along the c-axis was obtained as 1070 ± 290 cm2/Vs for a donor density of 1 × 1015 cm-3, and it was compared with the results by Hall effect measurement.

Prediction of Contact Resistance of 4H–SiC by Machine Learning Using Optical Microscope Images after Laser Doping

In this study, machine learning (ML) was employed to predict the electrical properties of finished devices, specifically focusing on the state of the contacts at the electrodes. The predictions are based on optical microscope images of the surface conditions, which were captured immediately following the laser doping of nitrogen atoms into 4H-SiC. The laser doping process involved varying the laser fluence from 0.4 to 4.0 J/cm2 and using number of laser irradiation to 5, 10, 20, and 100 shots. The ML prediction was carried out in two steps. In STEP1, we classified the contact status into three types.: 1) Schottky junctions (insufficient doping), 2) Ohmic contact (good contact), and 3) Not ohmic (damage caused by laser irradiation). In STEP2, contact resistance prediction (numerical regression) was performed using the dataset predicted as an ohmic contact. As a result, we found that the three classifications in STEP1 could be predicted with a high accuracy of over 88%. Furthermore, the contact resistance prediction in STEP2 could be made with an accuracy (RMSPE: root mean square percent error) of 27.2%. Visualizing the prediction basis of numerical regression using modulus-reweighted grad-regression activation mapping (MoRAM) revealed that the ML model focused on the inside of the laser-irradiated area in the optical microscope image. The results of the scanning electron microscopy observation of the laser-irradiated area showed that ablation and residuals were generated during laser doping in that area. Consequently, it was concluded that our ML model predicted the contact resistance of the finished device taking into consideration these surface conditions. Even highly-skilled laser doping technicians have difficulty predicting the resistance values arising from the ablation and residue conditions. Based on above results, we conclude that our ML model is capable of predicting the electrical characteristics of a finished device, a task that is often considered challenging for humans.

Optimal design of pseudo-vertical Schottky diode with n-type junction terminal extension structure

In the study, a pseudo-vertical Schottky barrier diode (pVSBD) with n-type junction terminal extension (JTE) is proposed. The impacts of key parameters, including cover distance, junction depth, and stretch distance, are evaluated on the electrical characteristics of the designed pVSBD. In the designed device, the homoepitaxial pn-junction constructed with n-type JTE and p- drift layer can reshape the electric field and alleviate the electric field crowding around the corner of Schottky contact, which enables the p- drift layer withstand the higher reverse bias voltage. Thus, the blocking capacity of the pVSBD device is improved, and the maximum breakdown voltage of 2885 V can be obtained. Meanwhile, it is also shown that the doping concentration of n-type diamond termination can influence the electrical characteristics obviously. The trade-off between the breakdown voltage and the specific ON-state resistance is considered in the paper. The pVSBD device with high blocking voltage can be realized based on the proposed pVSBD structure.

Design and evaluation of β-Ga2O3 junction barrier schottky diode with p-GaN heterojunction

A novel design for a junction barrier Schottky (JBS) diode based on a p-GaN/n-Ga2O3 heterojunction is proposed, exhibiting superior static characteristics and a higher breakdown capability compared to the traditional Ga2O3 Schottky barrier diode (SBD). By utilizing wide-bandgap p-type GaN, the β-Ga2O3 JBS diodes demonstrate a turn-on voltage (V on ) of approximately 0.8 V. Moreover, a breakdown voltage (V br ) of 880 V and a specific on-resistance (R on,sp ) of 3.96 mΩ·cm2 are achieved, resulting in a Baliga’s figure of merit (BFOM) of approximately 0.2 GW /cm 2. A forward current density of 465 A cm−2 at a forward voltage of 3 V is attained. The simulated reverse leakage current density remains low at 9.0 mA cm−2 at 800 V. Floating field rings, in conjunction with junction termination extension (JTE), were utilized as edge termination methods to attain a high breakdown voltage. The impact of β-Ga2O3 periodic fin width fluctuations on the electrical characteristics of JBS was investigated. Due to the enhanced sidewall depletion effect caused by p-type GaN, the forward current (I F ) and reverse current (I R ) decrease when the β-Ga2O3 periodic fin width decreases. The findings of this study indicate the remarkable promise of p-GaN/n-Ga2O3 JBS diodes for power device applications.

MoC nanoparticles embedded in superior thin g-C3N4 nanosheets for efficient photocatalytic activity

Photogenerated charge carrier transfer efficiency in graphitic carbon nitride (g-C3N4) based heterostructures depended strongly on the interface nature. In this paper, MoC nanoparticles less than 5 nm were implanted in superior thin g-C3N4 nanosheets to create high charge carrier separation and transfer efficiency. Cubic MoC in N-doped graphitic carbon was first fabricated using dicyandiamide and ammonium molybdate tetrahydrate at 800 °C. The MoC nanoparticles were homogeneously implanted in g-C3N4 nanosheets by further thermal polymerization of bulk g-C3N4 prepared using melamine and MoC/C composites to create a Schottky junction which was confirmed by band gap analysis and free radical capture test. Melamine and dicyandiamide also play important role to create highly efficient catalysts. The MoC nanoparticles revealed fine crystallinity. A well-developed interface between MoC and g-C3N4 was observed. Because of high conductivity of MoC, well-developed interface, and co-catalyst role of MoC, the MoC/g-C3N4 junction exhibited ideal photocatalytic activity for dye degradation and water splitting. The kinetic constant rate of Rhodamine B degradation using a MoC/g-C3N4 sample created by optimized conditions was 0.061 min−1 which was 8.7 times of that of pristine g-C3N4 nanosheets. In the case of without co-catalyst addition, the photocatalytic hydrogen generation rate using this composite sample was 233.0 μmol g−1 h−1 which was 15.2 times of that of initial g-C3N4 nanosheets. These results supply an efficient approach for the first time to homogeneously distribute small cubic MoC nanoparticles in superior thin g-C3N4 nanosheets to construct heterostructures and greatly reduce photogenerated charge carrier recombination.

Characterization of interface states and investigation of possible current conduction mechanisms in the Pt, Au, Cu/n-InP Schottky diodes

Based on the capacitance/conductance–voltage (C/G–V) and current–voltage (I–V) methods, the interface characteristics and the current conduction mechanisms of Pt/n-InP Schottky contacts were studied in detail. The interface states strongly affected the values of capacitance in the depletion region. From Terman, G–V, and forward I–V methods, the interface state density (D it) was found to range from mid-1012 to mid-1013 eV−1cm−2. The forward current characteristics was not elucidated by the thermionic emission (TE) model assisted by tunneling via the interfacial layer. Rather, the spatially distributed inhomogeneous barrier could interpret the forward current characteristics. Trap-assisted tunneling involving phosphorous vacancy (VP)-related defects was observed to be dominant in the case of the reverse current characteristics. The comparison of Pt metal contact with Cu and Au contacts revealed that Pt contact has the highest D it among three contacts.

SmartSiC™ Substrates: A Boon to Drain Metallization Process

We present results of epitaxial characterization and benchmarking of Silicon Carbide (SiC) epitaxial layers grown on both 6-inch commercially available SiC substrate and on SOITEC’s new generation SmartSiCTM substrate. Multi wafer reactor was utilized to avoid run-to-run variation. Schottky Barrier Diodes (SBD) and electrical test vehicles were fabricated to extract ideality factor, barrier height and ohmic contact resistance for benchmarking.

All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts

Two-dimensional (2D) semiconductors and van der Waals (vdW) heterostructures with graphene have generated enormous interest for future electronic, optoelectronic, and energy-harvesting applications. The electronic transport properties and correlations of such hybrid devices strongly depend on the quality of the materials via chemical vapor deposition (CVD) process, their interfaces and contact properties. However, detailed electronic transport and correlation properties of the 2D semiconductor field-effect transistor (FET) with vdW graphene contacts for understanding mobility limiting factors and metal-insulator transition properties are not explored. Here, we investigate electronic transport in scalable all-2D CVD-grown molybdenum disulfide (MoS2) FET with graphene contacts. The Fermi level of graphene can be readily tuned by a gate voltage to enable a nearly perfect band alignment and, hence, a reduced and tunable Schottky barrier at the contact with good field-effect channel mobility. Detailed temperature-dependent transport measurements show dominant phonon/impurity scattering as a mobility limiting mechanisms and a gate-and bias-induced metal-insulator transition in different temperature ranges, which is explained in light of the variable-range hopping transport. These studies in such scalable all-2D semiconductor heterostructure FETs will be useful for future electronic and optoelectronic devices for a broad range of applications.

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment.

Molybdenum disulfide (MoS2) is a promising candidate for next-generation transistor channel materials, boasting outstanding electrical properties and ultrathin structure. Conventional ion implantation processes are unsuitable for atomically thin two-dimensional (2D) materials, necessitating nondestructive doping methods. We proposed a novel approach: tunable n-type doping through sulfur vacancies (VS) and p-type doping by nitrogen substitution in MoS2, controlled by the duration of NH3 plasma treatment. Our results reveal that NH3 plasma exposure of 20 s increases the 2D sheet carrier density (n2D) in MoS2 field-effect transistors (FETs) by +4.92 × 1011 cm-2 at a gate bias of 0 V, attributable to sulfur vacancy generation. Conversely, treatment of 40 s reduces n2D by -3.71 × 1011 cm-2 due to increased nitrogen doping. X-ray photoelectron spectroscopy, Raman spectroscopy, and photoluminescence analyses corroborate these electrical characterization results, indicating successful n- and p-type doping. Temperature-dependent measurements show that the Schottky barrier height at the metal-semiconductor contact decreases by -31 meV under n-type conditions and increases by +37 meV for p-type doping. This study highlights NH3 plasma treatment as a viable doping method for 2D materials in electronic and optoelectronic device engineering.

Zinc Oxide Nanorods/Reduced Graphene Oxide for Schottky Junction Ultraviolet Photodetector Application

Zinc Oxide Nanorods/Reduced Graphene Oxide for Schottky Junction Ultraviolet Photodetector Application

Giant Tunneling Electro‐Resistance in Ultrathin Ferroelectric Tunnel Junctions: The Interface Barrier Gain Mechanism

AbstractUltrathin ferroelectric tunnel junctions (FTJs) hold considerable promise for next‐generation, high‐speed, low‐power, and high‐density nonvolatile memory applications. Achieving a substantial tunneling electro‐resistance (TER) remains a challenge as the ferroelectric layer is thinned to nanoscale dimensions, often resulting in a diminished or lost polarization. An innovative interface barrier gain mechanism is introduced, employing interface electronic state modulation to precisely control the size of an additional interface barrier. This strategy lessens the dependency of the tunneling barrier on ferroelectric polarization strength, facilitating a remarkable TER even at ferroelectric thicknesses as minimal as ≈1 nm. The focus is on composite FTJs using In2Se3/MTe2 (M = Mo, W), where the inclusion of an MTe2 monolayer disrupts the asymmetric electrode configuration. The weak ferroelectric polarization reversal of the In2Se3 monolayer effectively modulates the electronic state coupling at the In2Se3/MTe2 interface. This modulation leads to variations in the width and height of the Schottky barrier at the heterojunction‐electrode interface corresponding with the ferroelectric polarization reversal, establishing a beneficial Ohmic contact in the “on” state and resulting in an exponential TER increase up to 5.4 × 106%. This work introduces a universal mechanism to overcome the thickness limitations traditionally associated with enhancing TER, marking a significant advancement in the development of ultrathin ferroelectric nonvolatile devices.