Abstract
In the study, a pseudo-vertical Schottky barrier diode (pVSBD) with n-type junction terminal extension (JTE) is proposed. The impacts of key parameters, including cover distance, junction depth, and stretch distance, are evaluated on the electrical characteristics of the designed pVSBD. In the designed device, the homoepitaxial pn-junction constructed with n-type JTE and p- drift layer can reshape the electric field and alleviate the electric field crowding around the corner of Schottky contact, which enables the p- drift layer withstand the higher reverse bias voltage. Thus, the blocking capacity of the pVSBD device is improved, and the maximum breakdown voltage of 2885 V can be obtained. Meanwhile, it is also shown that the doping concentration of n-type diamond termination can influence the electrical characteristics obviously. The trade-off between the breakdown voltage and the specific ON-state resistance is considered in the paper. The pVSBD device with high blocking voltage can be realized based on the proposed pVSBD structure.
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