Schottky Barrier Formation Research Articles

W/Mo/Cr Doping Modulates the Negative-Positive Inversion Gas Sensing Behavior of VO2(M1).

The anomalous gas sensing behavior has garnered significant attention from researchers, prompting a re-evaluation of the gas sensing theory. This work focuses on inversion gas sensing behavior induced by element doping. W/Mo/Cr-doped VO2(M1) samples are synthesized, and their sensing behaviors are investigated. The results show that the elements can modulate the sensing behavior with an opposite orientation. The sensing behavior in the opposite orientation is attributed to the extent of the reduced Fermi level of VO2(M1) after doping. W-doped VO2(M1) maintains a resistance-decreased sensing behavior (-n). In contrast, the decrease in Fermi level results in the formation of a Schottky barrier between the gas-absorbed Mo/Cr-doped VO2(M1) and the electrode. The formation of Schottky barriers leads to the inversion sensing behavior, which feedbacks as an increased resistance (-p). This study offers a novel perspective on the gas sensing theory.

(Invited) Nano-Sized Metal Deposition on Doped Silicon: Electrodeposition and Characterization

The electrodeposition of nanostructured materials onto silicon substrates offers a pathway to blend the advantageous traits of metals with silicon's exceptional electronic properties. This amalgamation facilitates the creation of integrated circuits, electrodes for batteries, supercapacitors, fuel cells, sensors, and photovoltaic cells [1]. This deposition method was selected for its cost-effectiveness, scalability, and rapid synthesis capability. It operates at room temperature and atmospheric pressure, utilizing aqueous solutions with adjustable properties.In this study, we examined the feasibility of electrodeposited nanoparticles, ultra-thin films, and Under Potential Deposition (UPD) on n-doped silicon [2]. The initial metal selection for electroplating was based on Density Functional Theory (DFT) calculations, considering factors such as the Schottky barrier, metal-silicon interactions, and metal-metal formation energy. Voltammetric analyses were conducted using solutions containing Ni, Ru, Pd, Rh, Pt, Ag, Mn, Co, and Au. Charge-controlled depositions were executed, supplemented by tests on electroless deposition. Optimal deposition conditions were sought for the most promising metals. The resulting deposits were morphologically and compositionally characterized using Scanning Electron Microscope (SEM) techniques, complemented by analytical spectroscopy including Energy Dispersive X-ray Spectroscopy Analysis (EDS) and X-ray Photoelectron Spectroscopy (XPS).Multiple charge-controlled deposition cycles were carried out to modulate the surface coverage, the average thickness, and the particle size distribution. The metal deposits thus obtained are under study to be used as promising templates to partially wet etching the underneath silicon and produce silicon nanowires (NWs). This procedure could create new opportunities for small-size and better-performing sensors [3].Project funded under the National Recovery and Resilience Plan (NRRP), Mission 4 Component 2 Investment 1.3 - Call for tender No. 341 of 15 March 2023 of Italian Ministry of University and Research (MUR) funded by the European Union - NextGenerationEU - Project code PE_00000004, CUP B83C22004890007, Project title "3A-ITALY - Made-in-Italy circolare e sostenibile".

Using percolation to design ZnO composites with hBN modified grain boundaries to obtain varistor-like behavior

Conventional varistors rely on the formation of a Double Schottky Barrier within the intergranular region of ZnO via acceptor doping and a Bi2O3 phase. This work has been able to yield varistor-like behavior via cold sintered ZnO composites by placing 2D hBN flakes on the grain boundaries within the ZnO matrix. Above the percolation threshold, a network of resistive hBN barriers is formed which prevents current from flowing through the more conductive ZnO. However, at a given voltage, electrons can tunnel through the hBN if the layers are kept thin enough. Within this narrow band of hBN content, samples have been fabricated with α values as high as 9.5. The composite system demonstrated Schottky conduction at low fields before switching to Fowler-Nordheim tunneling at high fields. This microstructural design was able to show greater nonlinearity compared to previous attempts at creating varistor materials through the unique cold sintering process (CSP).

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS2

This research presents a comprehensive study of a Schottky diode fabricated using a gold wafer and a bilayer molybdenum disulfide (MoS2) film. Through detailed simulations, we investigated the electric field distribution, potential profile, carrier concentration, and current–voltage characteristics of the device. Our findings confirm the successful formation of a Schottky barrier at the Au/MoS2 interface, characterized by a distinct nonlinear I–V relationship. Comparative analysis revealed that the Au/MoS2 diode significantly outperforms a traditional W/Si structure in terms of rectification performance. The Au/MoS2 diode exhibited a current density of 1.84 × 10−9 A/cm2, substantially lower than the 3.62 × 10−5 A/cm2 in the W/Si diode. Furthermore, the simulated I–V curves of the Au/MoS2 diode closely resembled the ideal diode curve, with a Pearson correlation coefficient of approximately 0.9991, indicating an ideality factor near 1. A key factor contributing to the superior rectification performance of the Au/MoS2 diode is its higher Schottky barrier height of 0.9 eV compared to the 0.67 eV of W/Si. This increased barrier height is evident in the band diagram analysis, which further elucidates the underlying physics of Schottky barrier formation in the Au/MoS2 junction. This research provides insights into the electronic properties of Schottky contacts based on two-dimensional MoS2, particularly the relationship between electronic barriers, system dimensions, and current flow. The demonstration of high-ideality-factor Au/MoS2 diodes contributes to the design and optimization of future electronic and optoelectronic devices based on 2D materials. These findings have implications for advancements in semiconductor technology, potentially enabling the development of smaller, more efficient, and flexible devices.

2D/0D Heterojunction Fluorescent Probe with Schottky Barrier Based on Ti3C2TX MXene Loaded Graphene Quantum Dots for Detection of H2S During Food Spoilage

AbstractHydrogen sulfide (H2S) contamination of food has raised widespread public health concerns, leading to substantial medical and economic burdens. Herein, a 2D/0D heterojunction fluorescent probe (TCTG) with Schottky barriers (SB) is designed and synthesized, utilizing Ti3C2Tx MXene‐loaded graphene quantum dots (GQDs), for the detection of H2S during food spoilage. The microstructures observed through SEM and TEM reveal that uniformly sized GQDs are evenly attached to the surface of a monolayer Ti3C2Tx. The chemisorption between GQDs and Ti3C2Tx facilitates charge transfer and the formation of SB, resulting in intramolecular charge transfer (ICT) effects. With the introduction of H2S, TCTG(50%) exhibits the highest sensitivity, selectivity, and anti‐interference properties, with ultra‐fast fluorescence transient reaction (3s) and remarkably low detection limit of 41.82 ppb as well as noticeable color change. When TCTG(50%) reacted with H2S, the ICT effects are inhibited, leading to the recovery of photoinduced electron transfer (PET) and fluorescence quenching. Notably, probe TCTG is effectively utilized to detect changes in H2S levels in raw foods to assess their quality. Overall, the significance of this study is its potential to revolutionize food spoilage detection, offering a fast, reliable, and sensitive method to ensure food safety and reduce associated health and economic burdens.

Au – MoS2 nanoflowers sensors on interdigitated electrode for monitoring human respiration

Abstract Respiratory humidity sensors are essential for monitoring breath conditions in a variety of applications such as respiratory disease diagnosis, sleep apnea screening, and personalized medicine. With the increasing prevalence of respiratory diseases, such as asthma, chronic obstructive pulmonary disease (COPD), and sleep apnea, they have become essential tools for healthcare professionals, researchers and individuals. However, existing humidity sensors often suffer from poor sensitivity, slow response, and limited flexibility. In this paper, we report a novel Au – MoS2 respiratory humidity sensor that exhibits high resistivity, fast response, and excellent flexibility. The sensor is fabricated by drop casting a thin layer of Au decorated MoS2 on copper interdigitated electrodes (fabricated using copper clad PCB). The increase in the intensity of the peak was observed in Au – MoS2 hybrids in comparison to MoS2 analyzed using micro–Raman Spectroscopy. Using scanning electron microscopy (SEM), the morphology of MoS2 was observed, confirming its flower like structure. The Au nanoparticles were detected on the edges of MoS2, confirmed by transmission electron microscope (TEM).
The interfacial electronic interaction suggests that there is the formation of Schottky barrier between Au and MoS2 as confirmed by X–Ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The improved electronic interaction results in better sensing properties. The high dielectric constant and excellent surface-to-volume ratio of the MoS2 layer make it extremely sensitive to humidity; the Au nanoparticles offer good electrical conductivity and mechanical flexibility in its place. The study tested a respiratory sensor in a simulated environment, finding it more responsive to breathing and quick to return to rest. This suggests potential for the Au-MoS2 sensor in tracking breath states due to its sensitivity and adaptability, promising applications across various fields.

Self-rectifying and forming-free resistive switching with Cu/BN/SiO2/Pt bilayer device

Selector-free 3D vertical crossbar with low power consumption is necessary for developing high-density memory devices. Sneaking current in these devices is the prime factor for their degradation as they lose power, and there are glitches in data retrieval. In this article, we have successfully illustrated a forming free and self-rectifying cell in a chemically synthesized 2D memristive device based on hexagonal Boron Nitride (h-BN) material. The device performs well with a Rectification Ratio (RR) > 102 with SiO2/BN bi-layer structure at ±1.3 V. The device performed over 20000 cycles at a pulse width of 10 μs. Also, the device endurance decays with a different pulse width of 100 μs and 1 ms. Schottky barrier formation and development of conductive filament of oxygen vacancies are the primary causes for the proposed device to show Rectifying Resistive Switching (RRS) and Bipolar Resistive Switching (BRS), respectively. The device also performs good stability with the temperature range from Room Temperature (RT) to 250 °C. The sneak path concern and thermal stability enable potential applications for neuromorphic computing and future memory technology.

In situ constructed ferroelectric-nanonet-supported heterostructure thin film for high-performance photovoltaics

Heterostructure, which combines robust ferroelectrics and narrow-bandgap semiconductors together, is promising for acquiring both intensive photocurrent and large photovoltage output in photovoltaics; therefore, manipulation of the properties by engineering heterostructure has driven significant research activity. Herein, well-known Aurivillius-type ferroelectric Bi2WO6 and mullite-type Bi2Fe4O9 are chosen, and an excellent platform to investigate the role of ferroelectric-semiconductor heterostructure in tuning the photovoltaic effect is constructed by in situ depositing p-type nanoscale Bi2Fe4O9 onto n-type Bi2WO6 nanonet matrix. The nanonet-supported two-dimensional planar-like heterostructure and its ferroelectric domain switchability are confirmed by atomic force microscopy techniques. Significantly, the desired Bi2WO6/Bi2Fe4O9 film optimizes the key steps from light to electricity, and exhibits a large and stable photovoltaic effect, achieving four/three orders of magnitude enhancement of short-circuit photocurrent density/open-circuit voltage under laser irradiation. Furthermore, electric-field-controlled switchable asymmetric photoresponse and device stability were clearly observed, due to, in particular, Bi2WO6/Bi2Fe4O9 interfacial Schottky barrier formation and its modulation by poling-modified ferroelectric polarization. These findings highlight an important insight to construct diversified heterostructures with multi-functioning performances.

CVD graphene contacts for lateral heterostructure MoS2 field effect transistors

Intensive research has been carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance field effect transistors for integrated circuits1. Fabricating transistors with ohmic contacts is a challenging task due to the formation of a high Schottky barrier that severely limits the performance of the transistors for real-world applications. Graphene-based heterostructures can be used in addition to, or as a substitute for unsuitable metals. In this paper, we present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene achieving a low contact resistances of about 9 kΩ·µm and high on/off current ratios of 108. Furthermore, we also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a substantial performance enhancement by means of layer optimizations that would make transistors promising for use in future logic integrated circuits.

Ultrasensitive detection of xylene gas by cauliflower-like Au-TiO2 core-shell nanoparticles

TiO2 nanoparticles (NPs) and Au-TiO2 core-shell NPs (C-S NPs) were synthesized for xylene gas detection. Morphological, phase, and chemical studies demonstrated the successful generation of Au-TiO2 C-S NPs with a cauliflower-like morphology and desired composition. Also, the surface area of TiO2 NPs was 8.46, which increased to 23.88 m2/g for Au-TiO2 C-S NPs, due to the creation of a porous TiO2 shell around the Au core. The response of the TiO2 NPs to 50 ppm xylene was 14.19 at 500°C, while it increased to 165.77 at a lower temperature (450°C). Furthermore, while the TiO2 NPs gas sensor has no selectivity to xylene gas, the TiO2 C-S NP gas sensor exhibited excellent selectivity. Overall, incorporation of Au in TiO2 in the form of a C-S structure improved the performance of the sensor to sense xylene. Improved xylene sensing for the TiO2 C-S NPs stemmed from the high surface area and porous nature, oxygen defects, and formation of Au-TiO2 Schottky barriers. This research demonstrates the development of high-output xylene sensors by means of Au-TiO2 with a C-S structure.

Engineering ferroelectric-nanonet-based heterostructures enables superior photovoltaic effect and asymmetric switchability

Layered pervoskite ferroelectrics with a coexistence of robust spontaneous polarization and large intrinsic conductivity exhibit unique photoelectric behavior, and manipulation of photovoltaic response in such ferroelectric-based heterostructure has driven significant research activity. Herein, a Bi2WO6 layered oxide with a coexistence of ferroelectricity and 2D potential well which effectively confines carrier transport was chosen and its orientated nanonet film was formed epitaxially by pulsed laser deposition technique. An excellent platform to investigate the role of the ferroelectric-semiconductor heterostructure in tuning photovoltaic characteristics was constructed by embedding a p-type nanoscale Sb2Se3 within the n-type Bi2WO6 nanonet matrix. The desired Bi2WO6/Sb2Se3 heterostructure optimized the three key steps from light to electricity, and exhibited a large and stable photovoltaic effect, achieving three/two orders of magnitude enhancement of the short-circuit photocurrent density/open-circuit voltage under laser irradiation in its vertical structure device. What is more, an electric-field-controlled switchable asymmetric photoresponse was clearly observed in Bi2WO6/Sb2Se3 device, due to interfacial Schottky barrier formation and its width and height modulation by poling-modified ferroelectric self-polarization. In contrast to classical ferroelectric photovoltaics, the photocurrent direction of the target device after reversed poling remained unchanged, implying the significant role of the polarization-dependent interfacial effect, rather than bulk photovoltaic effect.

Low resistance ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

Ultra-wide band gap materials like β-Ga2O3 is considered as a potential candidate for power devices owing to their high breakdown voltage in contrast to the conventional semiconductors. The performance and the figure-of-merit for power devices critically depend on resistance offered by ohmic contact of metal with ultra-wide gap materials. However, high-quality ohmic contacts with Ga2O3 presents a significant challenge due to Fermi-level pinning and formation of Schottky barriers for the majority of metal contacts. Here, we investigated the electrical characteristics and interfacial reactions of Au/Al/Mo metal stack with β-Ga2O3 thin film at various annealing temperatures to demonstrate the ohmic contact formation mechanism. In-depth surface-sensitive XPS and UPS are employed to study the interface of metallic stack/Ga2O3 thin film. Our results indicate that post-annealing at high temperatures led to the intermixing of the metallic stack and results in the formation of binary intermetallic compounds of Al and Au. The intermetallic compound diffuses into the Ga2O3 layer and resulting in the creation of an oxygen-deficiency near the interface and helping to achieve contact resistance of 7.15 × 10−6 Ω cm2. This study establishes a robust foundation for the expanded utilization of Ga2O3 in power electronics and optoelectronics devices, emphasizing the vital role of interface engineering.

Review of: "The formation of Schottky barriers in the source and drain of a transistor causes a significant decrease in the drain current of FinFET nanotransistors"

Review of: "The formation of Schottky barriers in the source and drain of a transistor causes a significant decrease in the drain current of FinFET nanotransistors"

Magnetocapacitance at the Ni/BiInO3 Schottky Interface.

We report the observation of a magnetocapacitance effect at the interface between Ni and epitaxial nonpolar BiInO3 thin films at room temperature. A detailed surface study using X-ray photoelectron spectroscopy (XPS) reveals the formation of an intermetallic Ni-Bi alloy at the Ni/BiInO3 interface and a shift in the Bi 4f and In 3d core levels to higher binding energies with increasing Ni thickness. The latter infers band bending in BiInO3, corresponding to the formation of a p-type Schottky barrier. The current-voltage characteristics of the Ni/BiInO3/(Ba,Sr)RuO3/NdScO3(110) heterostructure show a significant dependence on the applied magnetic field and voltage cycling, which can be attributed to voltage-controlled band bending and spin-polarized charge accumulation in the vicinity of the Ni/BiInO3 interface. The magnetocapacitance effect can be realized at room temperature without involving multiferroic materials.

Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design.

The study aimed to investigate the impact of random fluctuations in Schottky barrier formation at polar interfaces between InGaZnO4 (IGZO) and different metals, particularly in the context of device miniaturization. The investigation revealed that different metals can establish various crystalline IGZO interfaces to achieve Ohmic contact, regardless of their work function. Additionally, the study suggests that introducing In doping at the amorphous IGZO interface can effectively reduce the Schottky barrier when in contact with Al metal. These findings provide theoretical guidance for the miniaturization of source-drain contacts in IGZO devices.

2D/2D {001}TiO2-x/Ti3C2Tx composite with ultra-high sensing performance for NO2 at room temperature

The remarkable electrical conductivity, abundance of surface functional groups, and large specific surface area make 2D MXenes-based heterostructures highly promising for room temperature gas sensing applications. However, these MXenes-based heterojunctions composed of different materials may suffer from issues, such as crystal incompatibility and bandgap mismatch. Herein, the {001}TiO2-x/Ti3C2Tx composite was prepared in situ by hydrothermal process and subsequent annealing. The {001} facets of TiO2 and oxygen vacancies that provide a heightened exposure of active sites in the composite and more gas diffusion channels, as well as the formation of Schottky barriers between {001}TiO2 nanosheets and Ti3C2Tx, can synergistically enhance the gas performance. The experimental results show that the {001}TiO2-x/Ti3C2Tx composite exhibits 1.9 and 27.5 times higher than the {001}TiO2/Ti3C2Tx composite and pristine Ti3C2Tx to 10 ppm NO2 at room temperature, respectively. Moreover, the {001}TiO2-x/Ti3C2Tx composite presents the great linear response (R2 = 0.99509), selectivity, repeatability and long-term stability to NO2. Density functional theory (DFT) calculations reveal the strong interactions between the {001}TiO2-x/Ti3C2Tx and NO2, indicating excellent sensitivity and selectivity of the composite material towards NO2. This work provides an effective way to construct a series of oxygen-defective Ti3C2Tx-based composites with exposed high-energy facets for enhanced gas sensing performances.

Comparison of the antimicrobial photocatalytic activities of SiO2 and Au@SiO2 nanostructures in water decontamination.

Photocatalytic disinfection of Escherichia coli suspension by silicon dioxide nanoparticles and silicon dioxide/gold nanocomposite in a batch reactor is investigated experimentally and results are compared. Silica nanoparticles were synthesized by Stöber method and pulsed laser ablation method was employed to prepare gold nanoparticles in distilled water. Composition of two nanoparticles species was carried out, using the second harmonic pulse of Nd:YAG laser, whose wavelength is in the absorption spectra of gold nanoparticles. Results confirm a decrease in the bandgap energy of silica nanoparticles after composition. Escherichia coli were selected as an indicator of the microbial water contamination. Disk diffusion method was used to evaluate the antimicrobial potential of SiO2 and Au@SiO2 nanostructures. Photocatalytic activities of both nanostructures were examined in dark, and under the irradiation of UV and visible light. In all conditions, the performance of Au@SiO2 nanocomposites was higher than SiO2 nanoparticles. In dark condition the higher biocidal nature and activity of Au nanoparticles and for the case of UV radiation, decreasing the bandgap energy and recombination rate of SiO2 nanoparticles after composition with Au increased the efficiency. For the case of visible light radiation, surface plasmon resonances effects, and local heat of Au nanoparticles were responsible for increasing the efficiency. RESEARCH HIGHLIGHTS: Doping large bandgap semiconductors nanostructures, such as silica with metal nanoparticles, such as gold will improve their photocatalytic activity to work in visible light. In this mechanism, gold nanoparticles act as effective traps to prevent the recombination of photogenerated electron-hole pairs. Other mechanisms, such as Schottky barrier formation, surface plasmon resonance absorption of gold nanoparticles, and biocidal nature of the gold nanoparticles are effective in increasing the efficiency of Au doped silica nanostructures.

Engineering anisotropic silver nanoparticles/TiO2 nanocomposites and its photodegradation process optimization under polychromatic light irradiation

AbstractIn this work, we engineered the functionalization of titanium dioxide (TiO2) with silver nanoparticles (AgNP) of different morphologies aiming the application of TiO2/AgNP nanocomposites as a smart photocatalytic material for environmental purposes. The characterizations confirmed TiO2‐Ag Schottky barrier formation, which allows the electron transfer process at the materials interface, increasing charge carriers lifetime. The photocatalysis process using methyl orange as a pollutant model in water and polychromatic Hg lamp was first maximized using factorial design statistics. Photodegradation kinetic evaluations showed that the nanocomposites were up to nine times more efficient than bare TiO2. The results show that dependence on AgNP size does not follow simple rules, while anisotropic AgNPs promoted higher efficiencies. Mechanism evaluation shows that photocatalysis occurred by three main routes: i) photoreduction of pollutant adsorbed on TiO2 surface; ii) reduction by radical superoxide; and iii) by hot electrons back injection on TiO2 conduction band. The effects ii and iii occurred preferentially at anisotropic nanostructures corners. In this scenario, photodegradation rates followed the order rod≥prisms>spheres. Therefore, this work systematic evaluated the influence of nanoparticle's morphology in the photocatalytic power of a TiO2/AgNP and points anisotropic AgNP‐functionalized nanocomposite as a promising nanomaterial for further environmental applications.

Surface-Catalyzed Zinc Oxide Nanorods and Interconnected Tetrapods as Efficient Methane Gas Sensing Platforms

Nanostructured metal oxide semiconductors have proven to be promising for the gas sensing domain. However, there are challenges associated with the fabrication of high-performance, low-to-room-temperature operation sensors for methane and other gases, including hydrogen sulfide, carbon dioxide, and ammonia. The functional properties of these semiconducting oxides can be improved by altering the morphology, crystal size, shape, and topology. Zinc oxide (ZnO) is an attractive option for gas sensing, but the need for elevated operating temperatures has limited its practical use as a commercial gas sensor. In this work, we prepared ZnO nanorod (ZnO-NR) arrays and interconnected tetrapod ZnO (T-ZnO) network sensing platforms as chemiresistive methane sensors on silicon substrates with platinum interdigitated electrodes and systematically characterized their methane sensing response in addition to their structural and physical properties. We also conducted surface modification by photochemical-catalyzed palladium, Pd, and Pd-Ag alloy nanoparticles and compared the uniformly distributed Pd decoration versus arrayed dots. The sensing performance was assessed in terms of target gas response magnitude (RM) and response percentage (R) recorded by changes in electrical resistance upon exposure to varying methane concentration (100–10,000 ppm) under thermal (operating temperatures = 175, 200, 230 °C) and optical (UV A, 365 nm illumination) excitations alongside response/recovery times, and limit of detection quantification. Thin film sensing platforms based on T-ZnO exhibited the highest response at 200 °C (RM = 2.98; R = 66.4%) compared to ZnO-NR thin films at 230 °C (RM = 1.34; R = 25.5%), attributed to the interconnected network and effective bandgap and barrier height reduction of the T-ZnO. The Pd-Ag-catalyzed and Pd dot-catalyzed T-ZnO films had the fastest response and recovery rates at 200 °C and room temperature under UV excitation, due to the localized Pd nanoparticles dots resulting in nano Schottky barrier formation, as opposed to the films coated with uniformly distributed Pd nanoparticles. The experimental findings present morphological differences, identify various mechanistic aspects, and discern chemical pathways for methane sensing.

Decoration of Pt/Pd bimetallic nanoparticles on Ru-implanted WS2 nanosheets for acetone sensing studies

Bimetallic decoration is a promising technique for enhancing the gas-sensing characteristics of resistive sensors. In this study, pristine WS2 nanosheets (NSs), Ru-implanted WS2 NSs, separate Pt and Pd nanoparticles (NPs) decorated on Ru-implanted WS2 NSs, and Pt/Pd bimetallic NPs decorated on Ru-implanted WS2 NSs sensors were prepared and utilized for acetone detection in self-heating operations at low applied voltages (1–5 V). The gas sensors were characterized by employing various techniques to explore their phases, morphologies, and chemical compositions. The Ru-implanted WS2 NSs sensor decorated with Pt/Pd bimetallic NPs exhibited good selectivity and fast dynamics toward acetone. Also, the optimized sensor displayed an acceptable response to acetone even in a high-humidity environment. The enhanced acetone sensing of the optimized gas sensor was related to the spillover and catalytic effects of the implanted Ru and Pt/Pd NPs on acetone, enhanced oxygen ionosorption with the formation of defects under implantation, and the formation of Schottky barriers between Pt/Pd and Ru-implanted WS2. We successfully demonstrated the potential of this novel sensing material for room-temperature acetone sensing.